CURRENT-PERPENDICULAR-TO-PLANE MAGNETO-RESISTIVE ELEMENT

Abstract

A current-perpendicular-to-plane magneto-resistive element includes a magneto-resistive film and a pair of upper and lower magnetic shielding films holding the magneto-resistive film therebetween for current feeding. The lower magnetic shielding film has an at least two-layer structure including a crystalline material layer and an amorphous material layer disposed below the crystalline material layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram schematically showing a structure of a CPP magneto-resistive element according to one embodiment of the present invention;

FIG. 2 is an enlarged sectional view showing a relevant portion of a magnetic head according to one embodiment of the present invention; and

FIG. 3 is a diagram showing a magnetic recording/reproducing apparatus according to one embodiment of the present invention.

Claims

1. A current-perpendicular-to-plane magneto-resistive element comprising: a magneto-resistive film; anda pair of upper and lower magnetic shielding films holding said magneto-resistive film therebetween for current feeding,wherein said lower magnetic shielding film has an at least two-layer structure including a crystalline material layer and an amorphous material layer disposed below said crystalline material layer.

2. The current-perpendicular-to-plane magneto-resistive element of claim 1, wherein a crystalline material of said crystalline material layer has a grain size of 90 nm to 850 nm.

3. The current-perpendicular-to-plane magneto-resistive element of claim 1, wherein said amorphous material layer has a film thickness as large as one-quarter to three-quarters of a film thickness of said lower magnetic shielding film.

4. The current-perpendicular-to-plane magneto-resistive element of claim 1, wherein a crystalline material of said crystalline material layer is constituted of at least one element selected from the group consisting of Fe, Ni and Co and contains at least C, S and B as trace elements, while an amorphous material of said amorphous material layer is a magnetic material and constituted of at least one element selected from the group consisting of Co, Fe, Zr, Ta, Mo, Ni, Cu, Si, Hf, Nb, W, Cr, Al, P, V, C, B, O and N.

5. The current-perpendicular-to-plane magneto-resistive element of claim 1, wherein a crystalline material of said crystalline material layer is either NixFe(1-x) (75<x<85 [at. %]) or CoyFe(1-y) (5<y<15 [at. %]).

6. A magnetic head including the current-perpendicular-to-plane magneto-resistive element of claim 1 as a read element.

7. A magnetic recording/reproducing apparatus including the magnetic head of claim 6 and a magnetic recording medium.