1. Field of the Invention
The invention relates generally to a current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor structure for two-dimensional magnetic recording (TDMR).
2. Background of the Invention
One type of conventional magnetoresistive (MR) sensor used as the read head in magnetic recording disk drives is a “spin-valve” sensor based on the giant magnetoresistance (GMR) effect. A GMR spin-valve sensor has a stack of layers that includes two ferromagnetic layers separated by a nonmagnetic electrically conductive spacer layer, which is typically copper (Cu) or silver (Ag). One ferromagnetic layer adjacent to the spacer layer has its magnetization direction fixed, such as by being pinned by exchange coupling with an adjacent antiferromagnetic layer, and is referred to as the reference or pinned layer. The other ferromagnetic layer adjacent to the spacer layer has its magnetization direction free to rotate in the presence of an external magnetic field and is referred to as the free layer. With a sense current applied to the sensor, the rotation of the free-layer magnetization relative to the pinned-layer magnetization due to the presence of an external magnetic field is detectable as a change in electrical resistance. If the sense current is directed perpendicularly through the planes of the layers in the sensor stack, the sensor is referred to as a current-perpendicular-to-the-plane (CPP) sensor.
In addition to CPP-GMR read heads, another type of CPP sensor is a magnetic tunnel junction sensor, also called a tunneling MR or TMR sensor, in which the nonmagnetic spacer layer is a very thin nonmagnetic tunnel barrier layer. In a CPP-TMR sensor the amount of tunneling current through the layers depends on the relative orientation of the magnetizations in the two ferromagnetic layers. In a CPP-TMR read head the nonmagnetic spacer layer is formed of an electrically insulating material, such as TiO2, MgO or Al2O3.
A proposed technology that uses multiple CPP-MR sensors is two-dimensional magnetic recording (TDMR). In TDMR, multiple sensors that are located on a single structure access the same or adjacent data tracks to obtain signals that are processed jointly. This allows the data tracks to be placed closer together, resulting in an increase in areal data bit density. In addition to increasing areal density, TDMR may provide an increased readback data rate if data from multiple data tracks are read concurrently. A structure with multiple stacked read sensors for TDMR is described in US 2013/0286502 A1.
Each of the individual CPP-MR sensors in a TDMR read head structure is required to be located between two shields of magnetically permeable material that shield the sensors from recorded data bits that are neighboring the data bit being read. During readback, the shields ensure that each sensor reads only the information from its target bits.
In a TDMR sensor structure, such as a structure with two or more stacked sensors, a problem arises due to skew of the sensors at the inside diameter (ID) and outside diameter (OD) regions of the disk. This is because the sensors are supported on a radial actuator that causes the sensors to make an arcuate path across the disk. At the mid-diameter (MD) regions of the disk the skew angle θ (the angle between a line orthogonal to the sensor and the data track) is near zero. However, at the ID and OD regions the skew angle can be up to 15-20 degrees, depending on the geometry of the actuator and disk. This may result in the sensors being misaligned from their target tracks. Reducing the spacing between the stacked sensors can reduce the skew effect; however the magnetic shields must have a minimum thickness to be effective, which limits how close the sensors can be spaced.
What is needed is a stacked CPP-MR sensor structure for TDMR that minimizes the effect of head skew.
Embodiments of this invention relate to a TDMR multi-sensor read head that allows for the reading of adjacent tracks without the adverse effects of high head skew when the head is in the inside diameter (ID) and outside diameter (OD) regions of the disk. The read head has three stacked sensors separated by magnetic shields. The lower or first sensor is located on the bottom magnetic shield S1 and is the primary sensor that is always aligned with the target track. A second magnetic shield S2 is located on the first sensor. The middle or second sensor is located on S2 and is spaced laterally from the first sensor a distance substantially equal to the track pitch (TP). A third magnetic shield S3 is located on the second sensor and is aligned above the first sensor. The upper or third sensor is located on S3 and is aligned with the first sensor. The upper or fourth magnetic shield S4 is located on the third sensor. The spacing D between the first and third sensors in the direction orthogonal to the planes of the sensors is selected to be related to TP and a maximum skew angle (θm). The spacing D between the first and second sensors in the direction orthogonal to the planes of the sensors is preferably D/2.
The read head is connected to circuitry that selects two of the three sensors to be the active sensors depending on the radial position of the head and thus the skew angle θ of the head. The first and second sensors are selected as the active sensors when the head is located in the mid-diameter (MD) region of the disk. The first and third sensors are selected as the active sensors when the head is located in the ID and OD regions of the disk.
For a fuller understanding of the nature and advantages of the present invention, reference should be made to the following detailed description taken together with the accompanying figures.
The CPP magnetoresistive (MR) sensor structure of this invention has application for use in a magnetic recording disk drive, the operation of which will be briefly described with reference to
The rotary actuator causes the head 24 to make an arcuate path 30 across the disk 12 between the inside diameter (ID) and outside diameter (OD) of the data region of the disk 12. Line 32 represents the position of the head 24 at the ID and line 34 represents the position of the head 24 at the OD. The skew angle θ is defined as the angle between an orthogonal to the head 24 (or the trailing surface 25) and the data track, as depicted at line 34 at the OD. Because of the arcuate path 30, the skew angle θ varies with radial position of the head 24 and is zero at some point in the mid-diameter (MD) region and absolute maximums at the ID and OD.
The read head portion of read/write head 24 is depicted as a sensor structure of stacked multiple CPP-MR read sensors 100, 200 for use in a disk drive with TDMR. In this example both read sensors 100, 200 are aligned with one another (vertically in
In the presence of an external magnetic field in the range of interest, i.e., magnetic fields from recorded data on the disk, the magnetization direction 111 of free layer 110 will rotate while the magnetization direction 121 of pinned layer 120 will remain fixed and not rotate. Thus when a sense current is applied from top shield perpendicularly through the sensor 100 layers, the magnetic fields from the recorded data on the disk will cause rotation of the free-layer magnetization 111 relative to the pinned-layer magnetization 121, which is detectable as a change in electrical resistance.
The structure, function and method of fabrication of CPP-MR sensor 100 are well-known and thus not described in detail in this application. Upper sensor 200 with corresponding 200 series numbered items is substantially identical in structure and function to sensor 100.
Side shields 160, 161 of soft magnetic material are formed outside of sensor 100, near the side edges of the sensor 100, particularly near the side edges of free layer 110. The side shields 160, 161 have magnetizations 162, 163, respectively, and thus longitudinally bias the magnetization 111 of free layer 110. Seed layers 170, 171 are located below the side shields 160, 161 and insulating layers 180, 181 are located below the seed layers 170, 171. The seed layers 170, 171 and side shields 160, 161 are electrically insulated from side edges of sensor 100 by electrically insulating layers 180, 181, which are typically formed of alumina (Al2O3), a silicon nitride (SiNx) or another metal oxide like a Ta oxide or a Ti oxide. The side shields 160, 161 are formed of “soft” magnetic material, meaning material that can be easily magnetized and demagnetized at low magnetic fields. The soft magnetic material is preferably an alloy comprising Ni and Fe with permeability (μ) preferably greater than 100. The side shields may be formed of any of the well-known materials used for conventional magnetic shields, for example NiFe alloys wherein Ni is present in the NiFe alloy in an amount between 40 and 99 atomic percent (at.%). Alternatively, other soft ferromagnetic materials may be used, like NiFeCr, NiFeMo, CoZrTa, CoZrNb and CoFeZr alloys. More specific compositions for the side shield material include (NiFex)Moy and (NiFex)Cry, where x is between 1 and 25 and y is between 1 and 8, where the subscripts are in atomic percent.
Upper sensor 200 comprises antiferromagnetic layer 224, pinned layer 220 with its magnetization 221 orthogonally pinned to the ABS, spacer layer 230, free layer 210 with its magnetization 211 oriented substantially parallel to the ABS but free to rotate, and a nonmagnetic cap 212. Upper sensor 200 also includes side shields 260, 261 with magnetizations 262, 263; seed layers 270, 271; and insulating layers 280, 281. The side shields 260, 261 may have the same structure, composition and function as previously described side shields 160, 161.
Center shield S2 is a laminated shared shield between lower sensor 100 and upper sensor 200. Shared center shield S2 includes a lower antiparallel structure (APS) comprising soft magnetic layers 401, 403 antiferromagnetically coupled by antiparallel coupling (APC) layer 402, and antiferromagnetic (AF) pinning layer 404 exchange coupled to layer 403. The APC layer 402 is typically Ru, Ir, Rh, Cr or alloys thereof with a thickness chosen to induce AF coupling between the layers 401, 403. A typical thickness of the APC is between about 7-9 Å, but the optimum thickness will depend on the composition of the magnetic materials chosen for layers 401 and 403 on both sides of the APC. The AF layer 404 is preferably IrMn (where Mn is between about 70 and 85 atomic percent), or any other known AF material, like PtMn, NiMn, FeMn, PdMn, PtPdMn, or RhMn. As a result of the antiferromagnetic coupling across APC layer 402 the layers 401, 403 have their respective magnetizations 405, 407 oriented antiparallel. Center shield S2 also includes a soft magnetic layer 408 below upper sensor 200 and a nonmagnetic decoupling layer 409 that separates layer 408 from AF layer 404. Because lower sensor 100 utilizes soft side shields 160, 161, layer 401 of center shield S2 is required to have a relatively fixed magnetization 405 to assist in stabilizing the magnetizations 162, 163 of side shields 160, 161, respectively. Thus AF pinning layer 404 is required to pin the magnetization 407 of layer 403 substantially parallel to the ABS, which results in the relatively fixed magnetization 405 of layer 401 due to antiferromagnetic coupling across APC layer 402 and thus in stabilizing the magnetizations 162, 163 of the side shields 160, 161, substantially parallel to the ABS as well.
Upper shield S3 is magnetically connected to side shields 260 and 261 and includes an antiparallel structure (APS) comprising soft magnetic layers 500, 503 antiferromagnetically coupled by antiparallel coupling (APC) layer 502, and antiferromagnetic (AF) pinning layer 504 exchange coupled to layer 503. As in the APS for S2, APC layer 502 is typically Ru, Ir, Rh, Cr or alloys thereof with a thickness chosen to induce AF coupling between the layers 500, 503 with typical thickness of the APC is between about 7-9 Å, but the optimum thickness will depend on the composition of the magnetic materials chosen for layers 500 and 503 on both sides of the APC. As a result of the antiferromagnetic coupling across APC layer 502 the layers 500, 503 have their respective magnetizations 505, 507 oriented antiparallel. The AF pinning layer 504 is required to pin the magnetization 507 of layer 503 substantially parallel to the ABS, which results in the relatively fixed magnetization 505 of layer 500 due to antiferromagnetic coupling across APC layer 502 and thus in stabilizing the magnetizations 262, 263 of the side shields 260, 261, substantially parallel to the ABS as well.
The sensor structure of
As is well known in the art the soft ferromagnetic material for use in shields S1, S2 and S3 may be a NiFe alloy, for example wherein Ni is present in the NiFe alloy in an amount between 40 and 99 atomic percent (at.%). Alternatively, other soft ferromagnetic materials may be used, like NiFeCr, NiFeMo, CoZrTa, CoZrNb and CoFeZr alloys.
When the stacked sensors are designed to read adjacent tracks a problem arises due to skew of the sensors in the ID and OD regions. This is depicted in
An embodiment of the invention is a stacked multi-sensor read head that allows for the reading of adjacent tracks without the adverse effects of high skew in the ID and OD regions.
D=(TP−δ)/sin θm Equation (1)
wherein θm is a selected maximum value of the skew angle θ. The term θm may be the absolute maximum value of θ, i.e., the value when the head is at the ID or OD, but may also be the value of θ when the head is at some radial position within the ID or OD regions. Sensor 2 is spaced from sensor 1 in the along-the track direction preferably by a distance D/2. The TP may be in the range of 25 to 50 nm for more advanced disk drives. Since shields S2 and S3 may be composed of 2 to 3 soft magnetic layers, with each soft magnetic layer thickness needing to be at least the minimum bit length of the recorded media (i.e., less than about 10 nm in more advanced disk drives), each of the shields S2 and S3 may have a thickness in the range of about 25 to 35 nm. A typical value of δ may be less than TP/4. Ideally sensor 3 is precisely aligned with sensor 1 in which case the value of D reduces to TP/sin θm. Thus by way of example for a TDMR disk drive where θm is 15 degrees and TP is 25 nm with δ=0, D is 97 nm. In this example each sensor 1, 2, 3 thickness is assumed to be 15 nm so the shields S2 and S3 would each have a thickness of about 34 nm (34 nm=(97−(2*15))/2). Each of S2 and S3 is thick enough to function as a magnetic shield.
The sensors 1, 2, 3 may all have substantially the same cross-track width or different cross-track widths. The cross-track widths may be less than TP or greater than TP. The width of the individual sensors is selected based on the desired manner in which the readback signals are intended to be processed.
While the present invention has been particularly shown and described with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes in form and detail may be made without departing from the spirit and scope of the invention. Accordingly, the disclosed invention is to be considered merely as illustrative and limited in scope only as specified in the appended claims.
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