The present invention relates to a cutting apparatus for cutting a workpiece.
A wafer formed on a front surface thereof with a plurality of devices such as integrated circuits (ICs) and large-scale integration (LSI) circuits in the state of being partitioned by a plurality of intersecting projected dicing line (streets) is divided into individual device chips by a cutting apparatus including a cutting blade in a rotatable manner, and the thus divided device chips are used for electric apparatuses such as mobile phones and personal computers.
The cutting apparatus includes a chuck table that holds a wafer, a cutting unit that includes, in a rotatable manner, a cutting blade for cutting the wafer held by the chuck table, an X-axis feeding mechanism for relative cutting-feeding of the chuck table and the cutting unit in an X-axis direction, and a Y-axis feeding mechanism for relative indexing-feeding of the chuck table and the cutting unit in a Y-axis direction, and can divide the wafer into individual device chips with high accuracy.
In addition, when the wafer is cut by the above-mentioned cutting blade, cutting swarf (contaminants) may float on and be adhered to the front surface of the wafer, thereby lowering the quality of the devices. In view of this, there has been proposed a technology of supplying cleaning water to the front surface of the wafer to wash away the cutting swarf and thereby prevent adhesion of the cutting swarf to the devices (refer to Japanese Patent Laid-open No. 2014-121738).
However, even when the cleaning water is supplied based on the technology described in the above-mentioned Japanese Patent Laid-open No. 2014-121738, it is difficult to efficiently wash away the cutting swarf, adhesion to the devices cannot be sufficiently prevented, and hence there is a demand for proposal of further solution.
Accordingly, it is an object of the present invention to provide a cutting apparatus that is able to efficiently prevent adhesion of cutting swarf to devices.
In accordance with an aspect of the present invention, there is provided a cutting apparatus including a chuck table that holds a workpiece, a cutting unit having, in a rotatable manner, a cutting blade for cutting the workpiece held by the chuck table, an X-axis feeding mechanism for relative cutting-feeding of the chuck table and the cutting unit in an X-axis direction, a Y-axis feeding mechanism for relative indexing-feeding of the chuck table and the cutting unit in a Y-axis direction orthogonal to the X-axis direction, a cutting liquid supply nozzle that is disposed adjacent to the cutting unit and supplies a cutting liquid to a contact point between the cutting blade and the workpiece, and a chemical liquid supply nozzle that has a length in the Y-axis direction which is greater than a width of the workpiece and supplies a chemical liquid for preventing adhesion of cutting swarf to a front surface of the workpiece.
Preferably, the cutting liquid supply nozzle supplies pure water or an aqueous solution of a neutral surface active agent, and the chemical liquid supply nozzle supplies any one of ammonia and aqueous hydrogen peroxide, a citric acid solution, sulfuric acid and aqueous hydrogen peroxide, ozone water, phosphoric acid and buffered hydrofluoric acid, and a phosphoric acid solution.
According to the cutting apparatus of the present invention, cutting swarf can be efficiently washed away from the front surface of the workpiece, and, further, lubricating properties and cooling properties for a cutting edge of the cutting blade can be maintained while corrosion of the cutting edge is prevented.
The above and other objects, features and advantages of the present invention and the manner of realizing them will become more apparent, and the invention itself will best be understood from a study of the following description and appended claims with reference to the attached drawings showing a preferred embodiment of the invention.
A cutting apparatus according to an embodiment of the present invention will be described in detail below with reference to the attached drawings.
The cutting apparatus 1 includes a cassette 4 (depicted in long and two short dashes line) that accommodates a plurality of wafers W as workpieces, a temporary placement table 5 on which the wafer W accommodated in the cassette 4 is conveyed out and temporarily placed, a conveying-in/out unit 6 that conveys out the wafer W from the cassette 4 onto the temporary placement table 5 and conveys in the wafer W from the temporary placement table 5 into the cassette 4, a conveying mechanism 7 that sucks the wafer W conveyed out onto the temporary placement table 5, swivels the wafer W, and places the wafer W on a holding surface 8b of a chuck table 8a of a holding unit 8, a cutting unit 9 that cuts the wafer W held under suction by the holding surface 8b of the chuck table 8a, a cleaning unit 10 (details are omitted) that cleans the wafer W cut by the cutting unit 9, a cleaning conveying mechanism 11 that conveys the cut wafer W from the chuck table 8a to the cleaning unit 10, an imaging unit 12 that images the wafer W on the chuck table 8a, and an unillustrated controller. The cassette 4 is mounted on a cassette table 4a disposed to be vertically movable by an unillustrated lifting mechanism, and, at the time of conveying out the wafer W from the cassette 4 by the conveying-in/out unit 6, the height of the cassette 4 is adjusted as required. Inside an apparatus housing 2, there are disposed an X-axis feeding mechanism for processing-feeding of the chuck table 8a of the holding unit 8 in an X-axis direction and a Y-axis feeding mechanism (both omitted in illustration) for indexing-feeding of the cutting unit 9 in a Y-axis direction orthogonal to the X-axis direction.
With reference to
As depicted in
The chemical liquid supply nozzle 96 is disposed adjacent to the cutting unit 9. In the present embodiment, the chemical liquid supply nozzle 96 includes a hollow cylindrical main body section 96a disposed along the Y-axis direction, a plurality of jet holes 96b which are disposed in the main body section 96a toward the lower side on the cutting blade 93 side and which jet the chemical liquid L1 toward the wafer W held by the chuck table 8a, and a chemical liquid introduction port 96c formed at an end part on the depth side of the main body section 96a. A chemical liquid supply unit 13 for supplying the chemical liquid L1 is connected to the chemical liquid introduction port 96c. The chemical liquid supply nozzle 96 is fixed to the cover 94 or the rotary shaft housing 91 by an unillustrated fixing member or members, and is moved as one body with the cutting unit 9.
The chemical liquid supply unit 13 includes a chemical liquid storage tank 13a that stores the chemical liquid L1, a chemical liquid passage 13b that connects the chemical liquid storage tank 13a and the chemical liquid introduction port 96c, and an on-off valve 13c for closing and opening the chemical liquid passage 13b. The chemical liquid storage tank 13a includes an unillustrated pump, and, by operating the pump and opening the on-off valve 13c, the chemical liquid L1 can be jetted through the jet holes 96b of the chemical liquid supply nozzle 96.
The cutting liquid supply nozzle 95 depicted in broken line in
The chemical liquid L1 in the present embodiment will be described below. The chemical liquid L1 adopted in the present invention is a chemical liquid which is used for a main purpose of preventing adhesion of cutting swarf generated by cutting to the front surface of the workpiece (in the present embodiment, the wafer W of silicon). Various chemical liquids having different effects as set forth below can be adopted according to the cutting conditions and the status of the workpiece. Note that the chemical liquid to be adopted in the present invention is not limited to Chemical Liquids 1 to 6 described below, and any chemical liquid that prevents adhesion of the cutting swarf generated by cutting to the front surface of the workpiece is not excluded from the present invention.
<Chemical Liquid 1>
Mixed water of ammonia and aqueous hydrogen peroxide: excellent in removal of particles.
<Chemical Liquid 2>
A citric acid solution: excellent in removal of heavy metal elements.
<Chemical Liquid 3>
Mixed water of sulfuric acid and aqueous hydrogen peroxide: excellent in removal of organic matter.
<Chemical Liquid 4>
Ozone water: excellent in removal of metals and organic matter.
<Chemical Liquid 5>
A mixed liquid of phosphoric acid and buffered hydrofluoric acid: excellent in removal of particles of insulating films.
<Chemical Liquid 6>
A phosphoric acid solution: excellent in removal of metallic impurities. When this solution is used, its temperature is raised to 35° C. to 50° C.
The above-described chemical liquid supply nozzle 96 is for supplying the chemical liquid L1 such that the cutting swarf scattered on the front surface Wa of the wafer W held by the chuck table 8a during cutting would not be adhered, and in the chemical liquid supply nozzle 96 and the wafer W held by the above-mentioned chuck table 8a are set to satisfy the following conditions described based on
As understood from the plan view of
The cutting apparatus 1 of the present embodiment is configured substantially as described above, and a mode of cutting the wafer W as a workpiece by the cutting apparatus 1 will be described below. Note that the workpiece in the present invention is the plate-shaped wafer W as depicted in
At the time of performing cutting by the cutting unit 9 of the cutting apparatus 1 described based on
Subsequently, as depicted in
A front view of the cutting for forming the above-mentioned cut groove 100 according to the embodiment is depicted in
As understood from
After the above-mentioned cut groove 100 is formed, the cutting blade 93 of the cutting unit 9 is put to indexing-feeding onto an unprocessed street We which extends in the first direction and which is adjacent in the Y-axis direction to the street We formed with the cut groove 100, and the cut groove 100 is formed similarly to the above. By repeating these operations, the cut grooves 100 are formed along all the streets We extending in the first direction. Next, the wafer W is rotated by 90 degrees, to match the streets We extending in a second direction orthogonal to the first direction to the X-axis direction, and, while the above-mentioned chemical liquid L1 and cutting liquid L2 are supplied, cutting is carried out on all the streets We extending in the second direction, whereby the cut grooves 100 are formed along all the streets We formed on the wafer W. By the above operations, the devices Wd of the wafer W are divided into individual device chips.
According to the cutting apparatus 1 of the embodiment described above, the cutting swarf can be efficiently washed away from the front surface Wa of the wafer W, the lubricating properties and cooling properties for the cutting edge of the cutting blade 93 can be maintained while corrosion of the cutting edge is prevented, and the wafer W can be divided along the streets We into the individual device chips.
The present invention is not limited to the details of the above described preferred embodiment. The scope of the invention is defined by the appended claims and all changes and modifications as fall within the equivalence of the scope of the claims are therefore to be embraced by the invention.
Number | Date | Country | Kind |
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2022-087428 | May 2022 | JP | national |