The present invention generally relates to a data storage device and method for operating the device, more particularly, relates to a data storage device equipped with carbon nanotubes formed on silicon micro-tips for data read/write and method for operating the silicon micro-tips.
In recent years, carbon nanotubes have been developed for applications in field emission display panels as electron emitters. Carbon nanotubes, utilized in such applications, are normally formed in hollow tubes which are either single-walled or multi-walled nanotubes. The carbon nanotubes, after being fractured, may have a length between about 1 and about 3 μm. The nanotubes may have an outside diameter between about 5 and about 50 nanometers which relates to an aspect ratio of about 100, when the length is 1 μm and the diameter is 10 nm.
Based on the large aspect ratios of the carbon nanotubes, made possible by the fact that the length of the nanotube is substantially larger than its diameter, the carbon nanotubes are ideal electron emitters. When a small electrical voltage is applied to the tips of the carbon nanotubes, electrons are emitted forming an electron beam having a diameter smaller than 100 Å. Carbon nanotubes therefore make an ideal field emission source. A single carbon nanotube can be used as an electron emitter for emitting electron beams of very high resolution. However, the use of the carbon nanotubes has not been extensively investigated outside the technical field of the field emission display devices.
The technique of MEMS (Micro-Electro-Mechanical-System) also being developed recently for the fabrication of microscopic-scaled machine parts, i.e., in the dimension of micrometers. The MEMS technology has been extended to the semiconductor fabrication industry. For instance, a semiconductor device can be formed in a planar structure by a planar process. Layers of different materials, i.e., insulating materials and metallic conductive materials, may be deposited on top of one another and then features of the device are etched through the various layers. More recently, 3-dimensional structure of semiconductor devices have also been fabricated by the MEMS technique.
Data storage devices and method for storing massive amounts of data have been important aspects in modern data processing technologies. A key element in data storage devices is the read/write function and the method for reading/writing data from/into the storage device. Conventionally, the element for reading/writing data from/into a data storage device is a laser beam or a magnetic head. In most instances, a thin probe needle must be used in carrying out such read/write function. The probe needle can easily be damaged when accidentally collided with the surface of a magnetic medium. Moreover, the probe needle wears out easily after long time usage. The technique to fabricate such probe needle in order to achieve resolution at the atomic level is also difficult. It is therefore desirable to provide an element for data read/write that does not utilize the traditional laser beam or magnetic head and for avoiding direct physical contact with a recording medium
In accordance with the various embodiments of the present invention, a method for read/write data onto a recording medium by using a nano-tip array and a data storage device containing such nano-tip array are disclosed
In one example, the present invention provides a data storage device that includes a medium capable of recording information, a movable arm above the medium, a carbon nanotube, a driving electrode, and a focusing electrode between the driving electrode and the medium. The movable arm has a conductive micro-tip on a portion of the movable arm, and the conductive micro-tip is above a first area of the medium and capable of accessing the information recorded in the medium. The carbon nanotube extends from the conductive micro-tip toward a direction of the medium. The driving electrode is between the conductive micro-tip and the medium, providing an opening between the conductive micro-tip and the medium, and is capable of driving electrons from the carbon nanotube toward the direction of the medium. Further, the focusing electrode is between the driving electrode and the medium, providing an opening between the conductive micro-tip and the medium, and is capable of focusing electrons passing through the focusing electrode opening.
Examples of the present invention may also provide a data storage device that includes a medium capable of recording information, an arm extending above the medium with a portion of the arm having a conductive micro-tip thereon, a driving electrode, and a focusing electrode between the driving electrode and the medium. The conductive micro-tip extends toward a first area of the medium and is capable of accessing the information recorded in the medium. The driving electrode is between the conductive micro-tip and the medium, providing an opening between the conductive micro-tip and the medium, and is capable of driving electrons from the carbon nanotube toward the direction of the medium. Further, the focusing electrode provides an opening between the conductive micro-tip and the medium, and is capable of focusing electrons passing through the focusing electrode opening.
Examples of the present invention may further provide a data storage device that includes a medium capable of recording information, a conductive micro-tip above a first area of the medium and capable of accessing the information recorded in the medium, a driving electrode between the conductive micro-tip and the medium, and a focusing electrode between the driving electrode and the medium. The driving electrode provides an opening between the conductive micro-tip and the medium, and is capable of driving electrons from the carbon nanotube toward the direction of the medium. And the focusing electrode provides an opening between the conductive micro-tip and the medium, and is capable of focusing electrons passing through the focusing electrode opening.
Examples of the present invention may still further provide a method for accessing data recorded in a medium. The method includes steps of providing a first electrical field between a micro-tip and a driving electrode to cause electrons to be emitted from the micro-tip to the medium, a first area of the medium being below the micro-tip, providing a second electrical field between the micro-tip and the medium to attract the electrons toward the medium through the driving electrode opening, and providing a third electrical field between the micro-tip and a focusing electrode to adjust a diameter of an electron beam containing the electrons. In the method, the driving electrode provides an opening between the micro-tip and the medium and being under the micro-tip, the focusing electrode is under the driving electrode and provides an opening between the micro-tip and the medium, and the electron beam is projected from the micro-tip toward the medium through the focusing electrode opening.
The foregoing summary, as well as the following detailed description of the invention, will be better understood when read in conjunction with the appended drawings. For the purpose of illustrating the invention, there are shown in the drawings embodiments which are presently preferred. It should be understood, however, that the invention is not limited to the precise arrangements and instrumentalities shown.
In the drawings:
Examples of the present invention provide a method for read/write data onto a recording medium by using a nano-tip array by first fabricating a silicon micro-tip array including a multiplicity of silicon micro-tips by a MEMS method and then forming integrally on each one of the multiplicity of silicon micro-tips at least one carbon nanotube extending outwardly away from the micro-tip. A recording medium is then positioned next to the silicon micro-tip array and rotated for scanning by the micro-tip array. An electrical current is flown to the at least one carbon nanotube when the at least one carbon nanotube engages the recording medium to effectuate the date read/write function.
Examples of the present invention also include a data storage device which includes a silicon micro-tip array, at least one carbon nanotube formed integrally on each one of the multiplicity of silicon micro-tips, an anode with a multiplicity of apertures formed therein, and a recording medium that rotates when positioned immediately adjacent to the silicon micro-tips.
Other example of the present invention also include a method for fabricating a silicon micro-tip array with at least one carbon nanotube integrally formed on each one of the silicon micro-tips which can be carried out by first fabricating a silicon micro-tip array by a MEMS technique and then forming integrally on each one of the multiplicity of silicon micro-tips at least one carbon nanotube extending outwardly away from the micro-tip. The formation of the carbon nanotube can be achieved by a variety of methods including chemical vapor deposition and electrodeposition.
A data storage device may be fabricated by combining a micro-electro-mechanical system method and a carbon nanotube formation method to form a nano-tip array on a semiconductor wafer. A piezoelectric thin film is incorporated in the MEMS method during the semiconductor fabrication for forming a suspended arm and a silicon micro-tip formed at a free end of the arm. After carbon nanotubes are formed on the silicon micro-tips, the piezoelectric thin film activates the micro-tip and thus enables electrons to be emitted from carbon nanotubes onto the surface of a recording medium. A thin film coated on the recording medium, under the bombardment of the electron, changes its magnetic property to achieve a high density data storage function, i.e., data read/write function.
By utilizing the present invention silicon micro-tip array coated with carbon nanotubes, a minute electron beam smaller than 100 Å can be produced when a low voltage current is flown to the carbon nanotubes. The device may utilize collimating lenses or magnetic field to control the size and movement of the electron beam in order to achieve data read/write and data storage. Since the present invention silicon micro-tip array coated with carbon nanotubes does not have physical contact with the surface of the recording medium, there is no physical wear on the carbon nanotubes which further improves the reliability and durability of the silicon micro-tip array. The minute size of electron beam produced further improves the resolution of read/write and enables high density recording to be executed.
A method can be carried out by first fabricating silicon micro-tip array on a semiconductor wafer by a MEMS technique. A catalytic chemical vapor deposition technique or an electrodeposition technique can then be used to integrally form carbon nanotubes on the tips of the silicon micro-tips.
Referring initially to
Also shown in
The present invention MEMS method can be carried out for fabricating silicon micro-tip array on a silicon on insulator (SOI) wafer by first growing a layer of Si.sub.3N, by a low pressure chemical vapor deposition (LPCVD) technique. The silicon nitride layer is used as a hard mask during the silicon etching process for forming the silicon tip 42 (shown in
In the next step of the process, an HF aqueous solution is used to remove the residual Si.sub.3N.sub.4 to finalize the structure of the silicon micro-tips. By accurate alignment of the SOI wafer and wafer backside silicon crystal etching, materials are removed on the SOI wafer backside such that a cantilever beam 40 formed of SiO.sub.2 is left on the wafer backside. A reactive sputtering technique is then used to sputter coating a piezoelectric material on the SiO.sub.2 to form the cantilever beam 40. A suitable piezoelectric material used is AIN. The various embodiments of the formation of the cantilever beams are shown in
The second major step for the fabrication of the present invention data read/write device is the growth of the carbon nanotubes, integrally with the silicon tip 42. The carbon nanotube growth and mounting technology can be achieved by first fabricating the carbon nanotubes utilizing two graphite electrodes in an inert gas environment of helium or argon. A direct current is flown to the graphite electrodes to produce an electrical charge between the electrodes. The carbon nanotubes may further be grown in a high-temperature temperature furnace on top of fine metal grains of a catalyst such as Fe or Co. A chemical process for fracturing CH.sub.4 or C.sub.2H.sub.6 is then used for fabricating the carbon nanotubes.
For instance, the catalytic chemical vapor deposition technique can be used to selectively grow carbon nanotubes on surfaces that are only coated with a fine grained catalyst, i.e., on top of the silicon micro-tip, such as Fe, Co, Ni, Pt, Pd or Ir. The SOI wafer is then placed in a high-temperature furnace, such as one kept at 800.degree. C., and a suitable flow of H.sub.2, Ar and C.sub.2H.sub.6 are then flown into the furnace tube. The carbon nanotubes are then grown, or deposited by a catalytic reaction by the chemical vapor deposition technique on top of the silicon micro-tips. A bundle, i.e., more than one, of carbon nanotubes is normally grown on the silicon tips. The longer the reaction time allowed, the larger the length of the carbon nanotubes are formed. After the growth of the carbon nanotube is completed, the SOI wafer is placed in ethanol for purification and then surface activated such that the carbon nanotubes are grouped together forming a single sharp tip. An illustration of the sharp tip is shown in
In the second method for forming the carbon nanotubes, i.e., the self-assembly method or the electrodeposition method, carbon nanotubes are first placed in an electrolyte solution such that the nanotubes are dispersed evenly. A SOI wafer coated with a conductive Ni layer on top is then placed in the electrolyte with the Ni layer as an electrode. A DC current is then applied such that electrical field is formed at the tip of the silicon micro-tips. The electric field formed attracts the carbon nanotubes dispersed in the electrolyte solution and thus combine with the silicon micro-tips due to electrical interaction. After the SOI wafer is removed from the electrolyte solution and treated for surface activation in order to group the carbon nanotubes, a sharp-pointed bundle of carbon nanotubes is formed.
In the data storage device 114 according to the embodiment of the present invention shown in
As illustrated in
In the example of the present invention, the position of the movable arm 40 and the distance between the movable arm 40 and the medium 70 may be controlled to change. First of all, at least one of the medium 70 and the movable arm 40 is coupled with a moving mechanism capable of moving another area of the medium to a location under the conductive micro-tip 42. In addition, according to examples of the present invention, the movable arm 40 may comprise at least two materials of different coefficients of thermal expansion. Hence the movable arm 40 may bend when a controlling temperature is provided, and the position of the movable arm 40 and the distance between the movable arm 40 and the medium 70 is changed accordingly.
Depending on the designs and applications, examples of the invention may provide a data storage device overcoming or reducing the drawbacks or shortcomings of the conventional data storage and data read/write devices. A data storage device may include a read/write element of a multiplicity of silicon micro-tips each formed on a suspended arm formed of piezoelectric material. In some examples, one or more carbon nanotubes may be formed integrally with one or more of the micro-tips. In some examples, the carbon nanotube may be integrally formed by chemical vapor deposition or electrodeposition.
It will be appreciated by those skilled in the art that changes could be made to the embodiments described above without departing from the broad inventive concept thereof. It is understood, therefore, that this invention is not limited to the particular embodiments disclosed, but it is intended to cover modifications within the spirit and scope of the present invention as defined by the appended claims.
The present application is a continuation-in-part of copending U.S. application Ser. No. 10/335,307 filed Dec. 31, 2002 entitled “Data storage device utilizing carbon nanotubes and method for operating”, which is hereby incorporated by reference herein in its entirety.
Number | Date | Country | |
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Parent | 10335307 | Dec 2002 | US |
Child | 11602471 | Nov 2006 | US |