Patent Application
20170175261
The invention is concerned with the production of coatings having the general formula ZnO(1-x)Sx, 0≦x≦1, referred to herein as zinc oxysulphides. It should be noted that the scope of the invention includes the cases where x=0 and x=1, hence the term ‘zinc oxysulphide’ as used herein includes zinc oxide and zinc sulphide.
Zinc oxysulphide is a material of interest in a number of applications. Use of the material as a cadmium free buffer layers in cadmium indium diselenide solar cells has been studied by Yousfi (Thin Solid Films, 361, 2000, 183-186). In this work, the range of compounds referred to herein as zinc oxysulphide was studied. ZnO0.85S0.15 gave the best overall results, as while pure ZnS had the highest Voc its fill factor and current densities were low. The work also showed that the crystallinity of the material and the bandgap reached a minimum when x=0.4-0.6. This was assigned to the large lattice mismatch between the ZnO and ZnS. Increasing the amount of sulphur also showed an increase in the resistivity.
U.S. Pat. No. 8,377,343 describes a sputtered zinc oxysulphide coating to show variable dielectric responses. The patent teaches that it is able to offer protection from UV radiation while transmitting electromagnetic radiation of larger wavelengths. The coating can be adjusted in the uv range of the relatively sharp absorption constant.
Sanders (Chem Mater. 1992, 4, 1005-1011) describes a zinc oxysulphide film, deposited by ALD, separating into a two phases system when x reaches a value of 0.56. This paper describes how the transparency of the film makes ZnOS desirable for use in thin film phosphors.
ZnS is described as having potential in the area of infrared optics. ZnS is described as having an excellent optical transmission with a broad transmission band from 0.4 μm in the visible to about 14 μm in the infrared, a high value of refractive index, good stability of refractive index and a low scatter. Large, 10 mm thick, polycrystalline ZnS has been made using CVD F. (Zhenyi, Journal of Crystal Growth 237-239, 2002, 1707-1710).
Deposition of ZnS by CVD using hydrogen sulphide as the sulphur source is known (Journal of Crystal Growth 237-239 2002 1707-1710).
Other techniques for deposition of zinc oxysulphide are documented including: pulsed laser deposition (Journal of Electronic Materials, Vol. 39, No. 5, 2010);
rf sputtering (Vac Sci Sci Tech. A 9, 4, 1991 2447);
chemical bath deposition (Materials Chemistry and Physics 96 2006 84-89) and ALD (Chem. Mater. 1992, 4, 1005-1011).
U.S. Pat. No. 5,284,519 describes the use of propylene sulphide to produce iron sulphide films.
The deposition of coatings on a glass or other substrate, by Chemical Vapour Deposition (CVD) techniques, is well known. This can conveniently be done ‘on-line’ i.e. where the coating is continuously deposited directly on the glass ribbon that is produced during the float glass manufacturing process. Chemical precursors of the coating material are directed to the vicinity of the glass ribbon where they react to form the coating on the glass. This reaction may is typically assisted by residual heat in glass from the float process.
WO9806675 is an example publication showing on-line coating of glass substrates by CVD.
For some coating chemistries, it is necessary to keep the precursors separate until they reach the vicinity of the substrate. This requires relatively complex delivery systems wherein each precursor is provided with a dedicated delivery line (pipe) and a coating beam having multiple slots. WO2013/019285 describes apparatus for Chemical Vapour Deposition of coatings on a glass substrate during the float glass production process, in which the reactants are delivered to the coating (reaction) site separately.
Where possible, it can be advantageous to pre-mix the precursors as these can then be delivered to the substrate by a single delivery line. This allows for much simpler coating equipment. However, in order to use this approach, precursors must be identified which do not pre-react or otherwise decompose before they reach the substrate.
Dialkyl zinc, particularly dimethyl zinc (DMZ) and diethyl zinc (DEZ) are possible candidates as precursors for the deposition of compounds containing zinc by CVD but previous experience suggests that these compounds are too reactive for pre-mixing with other precursors. Previous attempts to use dialkyl zinc in this way has led to pre-reaction of the precursors, i.e. reaction before they reach the deposition surface, and this in turn has led to blockage of the CVD apparatus and exhaust systems with reaction products. This is a particular problem where the substrate temperature is >400 C and causes problems when trying to operate such a process in a float bath environment with a temperature in the range 580-650 C.
A zinc based coating chemistry which allows precursors to be pre-mixed, thereby obviating the need for complicated apparatus for keeping the precursors separate until they reach the deposition surface, without causing such blocking of the deposition apparatus, represents a substantial advance in the art.
It is an object of this invention to provide convenient methods for deposition of zinc oxysulphide coatings on a substrate, particularly a continuous glass ribbon as produced during the float glass manufacturing process.
According to the invention, a method of forming a coating comprising ZnO(1-x)Sx, where 0≦x≦1, on a substrate by Atmospheric Pressure Chemical Vapour Deposition, comprising the steps of:
forming a mixture of precursors comprising a zinc source, a sulphur source and an oxygen source and directing said mixture to a surface of the substrate, wherein:
the zinc source comprises at least one of dimethyl zinc and diethyl zinc;
the sulphur source comprises at least one of an episulphide and a sulphoxide and
the oxygen source comprises at least one of nitrous oxide; a carboxylic ester and dimethyl sulphoxide.
Preferably, the coating is produced in a float glass bath at a substrate temperature in the range 550-750 C, more preferably 580-650 C.
In one embodiment, the sulphur source comprises ethylene sulphide.
In another embodiment, the sulphur source comprises propylene sulphide.
In another embodiment, the sulphur source comprises methyl phenyl sulphoxide.
In another embodiment, the sulphur source comprises dimethyl sulphoxide.
In preferred embodiments, the oxygen source comprises ethyl acetate or tert-butyl acetate. The oxygen source may also comprise nitrous oxide.
Following investigation of a number of possible precursors for the deposition of zinc oxysulphide by chemical vapour deposition, the inventors have discovered methods by which oxygen/sulphur content in the resultant coatings may be controlled and pre-reaction of alkyl-zinc precursors may be reduced.
The invention will now be described with reference to:
Referring to
Referring to
Precursor gas mixture is supplied via conduit 8 (which may also be fluid cooled) extending along the coating beam, and through drop lines 9 spaced along conduit 8. The precursor gas mixture, so delivered by drop lines 9 enters a delivery chamber 10 and then passes through passage 11 to the surface region of glass substrate 12 where they flow in the direction of the arrows.
Baffles 13 may be included in the delivery chamber to provide for a more uniform flow and distribution of precursor materials across the substrate 12.
Spent precursor materials are removed through exhaust chambers 14.
The coating beam illustrated in
A laboratory scale dynamic coater based on the apparatus illustrated in
Initial experiments were concerned with generating a zinc oxide (ZnO) baseline coating.
DEZ was used as the zinc precursor and ethylacetate initially served as the oxygen source (DEZ being pyrophoric and reacting violently with water or oxygen).
Delivery lines were warmed to above 100° C. to prevent condensation of the ethylacetate and ZnO films were obtained. However, these were very thin.
Substitution of ethylacetate with tertiary butyl acetate (tBuOAc) showed the latter to be a more efficient oxidant for zinc, speeding the reaction and producing thicker films (about four fold). These results were verified on both the static coater and the laboratory scale dynamic coater. Nevertheless, even with this more effective oxidant, damage to the underlying fluorine doped tin oxide layer has been observed. This is attributed to rapid decomposition of dialkyl zinc to produce intermediates too quickly for complete oxidation by the ester: the result is a stoichiometrically oxygen deficient coating, which in turn reacts with oxygen in the underlying layer.
It was decided to investigate possible chemistries using the dialkyl zincs and separate sulphur and oxygen containing precursors. Such an approach should also offer greatest scope for controlling the zinc:sulphur ratios in the coatings.
A number of further potential CVD precursors to ZnOS were investigated using a static coater as shown in
These precursors were each tried using a static coater as described in
The zinc containing precursor was diethyl zinc.
Each of these precursors will be further commented on below.
Use of this precursor as a sulphur source for atmospheric pressure CVD (APCVD) of niobium sulphide has been described (e.g. C. Cammelt et al, J. Inorg. Chem. 2004, 14, 290-291). The use of a scrubber system comprising bubblers containing sodium hypochlorite is described in order to neutralise byproducts.
Modifications were made to the coater system described in
A number of experiments were performed with varying ratios of precursors. In each case, the coatings produced were revealed by X-ray Diffraction analysis (XRD) to be zinc oxide with only trace levels of sulphur detected.
The high volatility of episulphides meant that this chemical needed to be kept at around 0° C. in order to the necessary concentrations in the precursor mixture. This meant that the bubbler was held in an ice bath.
Propylene sulphide proved successful in providing relatively thick, clean coatings on the static coater, using ethyl acetate as an oxidant. Initial analysis showed these coatings contained zinc, oxygen and sulphur.
Further experiments were conducted in which the amount of oxidant and propylene sulphide were varied and these suggested that it is possible to control the ratio of oxygen and sulphur within the coating.
One sample was prepared using no additional oxidant and XPS analysis revealed this to consist of ZnS in a mixture of the sphalerite and wurtzite forms.
Further work was done on the dynamic coater in which the effect of varying the amounts of oxygen and sulphur precursors on the film composition was studied. The results are summarised in table 2.
Table 2 shows that by increasing the amount of propylene sulphide, it is possible to increase the amount of sulphur incorporated in the coating, up to a level where only a doping level of oxygen is present. Even with the smallest percentage if propylene sulphide in the precursor mixture, where the ethyl acetate component was some 47 times greater, a significant amount of sulphur (over 19%) was still present in the coating.
These results suggest that the sulphur precursor is reacting more successfully with zinc than is the ethyl acetate.
Previous work on the production of zinc oxide suggested that t-butyl acetate is a more effective oxidant than ethyl acetate. The use of this oxygen source in the production of ZnOS was investigated next. X-ray Photoelectron Spectroscopy (XPS) analysis of these coatings (made using t-butyl acetate with propylene sulphide and diethyl zinc) had very little sulphur incorporated. Moreover, this did not vary significantly with varying concentrations of t-butyl acetate. These results are summarised in table 3.
A further experiment, with the DEZ precursor reduced from 2.7% to 1% showed no significant impact on the overall coating thickness. This suggests that at >1% DEZ, the DEZ was being run in excess and that the deposition was being limited by oxygen or sulphur availability.
As an alternative to propylene sulphide, ethylene sulphide was also tested. The two compounds have similar properties but the latter is more readily available and proved cheaper to purchase on laboratory scales. The results proved very similar to those for propylene sulphide and the same trends were observed.
However, it was subsequently noted that neither of these chemicals were very suitable for full scale trials: they are both relatively expensive; difficult to handle and volatile.
This compound was identified as a potential single source precursor for both oxygen and sulphur. Films were produced on the static coater by reacting with DEZ and EtOAc. These were fairly thick, relative to other coatings produced with different sulphur precursors at similar ratios and gas phase concentrations. The reaction rate was improved and analysis of the films showed them to be ZnOS.
When no oxidant was used, ZnOS was still produced but with a lower oxygen content.
Films produced from EtSAc on the laboratory scale dynamic coater were less successful, having a loosely adhered powder on top, indicating that there was still a significant pre-reaction occurring.
Although a toxic gas, sulphur dioxide (SO2) was of interest as a potential sulphur source because it is readily available and is already used during float glass production.
In order to limit the amount of pre-mixing, and thereby reduce the amount of blockage should the precursors pre-react, the SO2 delivery line was connected just before the coater baffle section 2 (
When EtOAc was also included in the precursor mix, very thin coatings were obtained which were shown by XPS analysis to contain about 2-3% sulphur.
Use of t-butyl acetate as oxidant provided thicker coatings and XPS analysis showed these to contain zinc and oxygen only.
SO2 and DEZ did produce a coating when acetone was added as an oxidant. This coating was relatively thick, appeared quite yellow in transmission, and was revealed by XPS analysis to contain about 18% sulphur. XRD analysis characterised the coating as a mixture of zincite ZnO and wurtzite ZnS.
This compound was identified as a potentially useful sulphur source due to its stability, ease of handling, low toxicity and relatively low cost. Experiments on the static coater showed ZnSO coatings could be produced and suggested that some level of control could be achieved over the relative amounts of sulphur and oxygen incorporated.
The results further reinforced the view that t-butyl acetate is a more effective oxidant that EtOAc, the latter giving rise to a higher sulphur incorporation. Indeed, the composition of coatings obtained using DMSO and DEZ (about 30% sulphur and 20% oxygen) was largely unaffected by the additional use of EtOAc.
In other words, t-butyl acetate may be used as oxidant to produce a coating that is closer to ZnO in character, with just small amounts of sulphur incorporated, whereas true ZnOS films may be obtained using EtOAc as oxidant.
Following the initial series of experiments in the laboratory, a set of trials were performed in a float glass production environment, using full scale coaters (see
As previously noted, ZnOS is of interest as a potential buffer layer in cadmium indium diselenide and cadmium telluride based photovoltaic devices. The large scale trials involved coatings done on NSG TEC® glass, a coated glass substrate providing a transparent conducting electrode based on a fluorine doped tin oxide.
In addition, it was important to verify that the coating process, using the dialkyl zinc precursor, could be run for a significant amount of time without blocking the coaters exhausts. Dialkyl zincs are known as extremely reactive materials and previous trials using these materials have failed because they decompose before reacting with the oxidants. Suitable [oxygen and sulphur] precursors are therefore sought which can match the fast reaction kinetics of the DEZ or that are able to slow the reaction by forming an intermediate complex or adduct that will help to stabilise the zinc-containing material. The fast reaction kinetics of DEZ means that, prior to the current invention, the perceived wisdom was that pre-mixing of precursors would not work for reactions involving DEZ and multi-slot coaters of the type described in WO2013/019285 were needed.
Dimethyl zinc (DMZ) and diethyl zinc (DEZ) each may serve as such a zinc precursor. The former has the advantage that it has slightly slower reaction kinetics: the latter has the advantage that, at the time of the invention at least, it is far less expensive.
First, a ZnS coating was produced using DEZ (2%) and EtSAc (4%) with no additional oxidant. The coating was hazy in appearance with loose powder atop. After running the experiments for about an hour, significant blocking of the coater exhausts was observed which necessitated stopping and cleaning the exhausts by nitrogen purging.
Reduction of the DEZ concentration from 2% to 1% along with addition of t-butyl acetate (0.5%-2%), resulted in a cleaner, less powdery coatings but exhaust blocking still occurred after about 20 minutes. This procedure was repeated several times with similar results.
A zinc oxide coating produced using a DEZ:t-butyl acetate ratio of 1:7.5 began to block the exhausts after a few minutes.
The t-butyl acetate was then replaced with N2O as oxidant with DEZ:N2O ratios of 1:10, 1:20, 1:30 and 1:40. The appearance of haze increased with N2O ratio up to 30%: the experiments were run for over 1.5 hours with no evidence of exhaust blocking being seen.
The focus of the trials then changed to the use of DMSO as the sulphur precursor. During the experiments with this compound, the coaters were run for about five hours with no evidence of exhaust blocking. Coatings deposited on NSG TEC® showed only a very small increase in sheet resistance, which suggests minimal damage to the tin oxide.
Without wishing to be bound by theory, it is speculated that sulphoxide compounds such as DMSO and methyl phenyl sulphoxide form an intermediate species with the dialkyl zinc and this slows down decomposition, enabling reaction with the oxidant at the glass surface resulting in deposition of the coating.
The first of these experiments used only DEZ and DMSO in ratios from 1:0.5 to 1:4. This produced coatings that appeared non-hazy and uniform with no apparent effect on absorption. A large increase in reflection was seen, which decreased as the amount of DMSO was increased—suggesting that the coating was becoming thinner.
The largest increase in reflection was seen at the 1:0.75 ratio.
Table 4 shows the results of XPS analysis for the coatings produced from DEZ and DMSO only.
1thin coating;
2coating done on SiO2
The percentage concentrations quoted from XPS analysis in table 4 were taken at the point with the highest recorded value of sulphur. An increase in the concentration of the DMSO resulted in a thinner coating and, apparently, a higher carbon content. However, this could be attributed to surface contamination and it is therefore difficult to quantify when analysed on a rough base coating.
A set of experiments were then performed in which ethylthioacetate (EtSAc) was added to the DMSO/DEZ chemistry, in an attempt to increase the amount of oxygen in the coating. The coatings thus produced still appeared to have low absorption but with a lower reflection.
Next, N2O was tried with the DMSO/DEZ chemistry (DEZ:N2O=1:30, DEZ:DMSO=1:1, 1:2). Again the films appeared non-absorbing but they did not exhibit the great increase in sheet resistance noted in previous work.
Table 5 shows that addition of N2O to the DMSO/DEZ chemistry had little effect on the coating composition (cf. table 4).
Previous work using N2O as an oxidant with DEZ to produce ZnO, gave rise to a high increase in sheet resistance (by up to 12 Ω/square). The coatings were porous and this resulted in an anti-reflective effect when deposited on the NSG TEC™ glass Substrate. The combination of DEZ, DMSO and N2O gave rise to a significantly lower sheet resistance than this, around 11 Ω/square, which is only about 2 Ω/square higher than base NSG TEC™ glass used as a substrate. It is speculated that the increase in resistance is caused by the zinc based coating damaging the underlying tin oxide coating, particularly when the former is oxygen deficient and addition of the DMSO appears to reduce the extent of that damage.
Increasing the ratio of DMSO to N2O reduced the coating thickness and the coating was less anti-reflective when the DMSO was added. This suggests a densification of the coating.
For the final set of coatings, t-butyl acetate was used in combination with DMSO in an attempt to produce essentially ZnO, with only doping levels of sulphur.
The addition of the tert-butyl acetate did have an impact on the amount of sulfur incorporated within the coating and increasing this oxidant did reduce the percentage concentration of the sulfur within the film (Table 6). As noted previously, laboratory experiments comparing ethylacetate and tert-butyl acetate as oxidants for the zinc oxide formation have shown tert-butyl acetate to be a significantly more efficient oxidant, producing much thicker zinc oxide films. When the sheet resistance of the TEC overcoated samples were compared it was again found that t-butyl acetate plus DEZ gave coatings of about 16 Ω/square, whereas the further inclusion of DMSO gave rise to coatings of about 13 Ω/square.
Finally, after all experiments to produce coatings were complete, the coater was once again run with just t-butyl acetate and DEZ to verify the tendency of this oxidant to cause blocking of the exhausts. With a DEZ:t-butyl acetate ratio of 1:4, the coater ran successfully for 15 minutes with no significant exhaust blocking. When the ratio was increased to that previously used (1:7.5) the coater exhaust blocked immediately. This demonstrated that the addition of DMSO was beneficial for a commercially relevant coating process.
| Number | Date | Country | Kind |
|---|---|---|---|
| 1409135.9 | May 2014 | GB | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/GB2015/051490 | 5/21/2015 | WO | 00 |
