The following relates to semiconductor fabrication arts, semiconductor photolithography arts, extreme ultraviolet (EUV) photolithography arts, pellicle maintenance arts, and related arts.
Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature’s relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
Photolithographic patterning processes use a reticle (i.e. photomask) that includes a desired mask pattern. The reticle may be a reflective mask or a transmission mask. In the process, ultraviolet light is reflected off the surface of the reticle (for a reflective mask) or transmitted through the reticle (for a transmission mask) to transfer the pattern to a photoresist on a semiconductor wafer. The exposed portion of the photoresist is photochemically modified. After the exposure, the resist is developed to define openings in the resist, and one or more semiconductor processing steps (e.g. etching, epitaxial layer deposition, metallization, et cetera) are performed which operate on those areas of the wafer surface exposed by the openings in the resist. After this semiconductor processing, the resist is removed by a suitable resist stripper or the like.
The minimum feature size of the pattern is limited by the light wavelength. Deep ultraviolet (UV) lithography, for example using a wavelength of 193 nm or 248 nm in some standard deep UV platforms, typically employs transmission masks and provides a smaller minimum feature size than lithography at longer wavelengths. Extreme ultraviolet (EUV) light, which spans wavelengths from 124 nanometers (nm) down to 10 nm, is currently being used to provide even smaller minimum feature size, such as 5 nm node devices or even smaller. At shorter wavelengths, particle contaminants on the reticle can cause defects in the transferred pattern. Thus, a pellicle is used to protect the reticle from such particles. The pellicle includes a pellicle membrane which is attached to a mounting frame, for example by an adhesive. The mounting frame supports the pellicle membrane over the reticle. Any contaminating particles which land on the pellicle membrane are thus kept out of the focal plane of the reticle, thus reducing or preventing defects in the transferred pattern.
By way of nonlimiting illustration, an EUV photomask used in EUV photolithography may suffer impacts of particles of materials such as silicon oxide, metal oxide, and organic particles falling on the pellicle. While some particles may fall onto the pellicle during mounting onto the mask, the dominant particle contamination vector is particles falling on the mask while it is used in an EUV scanner for EUV photolithography. For example, a typical EUV scanner light source is a laser-produced plasma (LPP) light source in which a pulsed laser beam is timed to strike droplets of a stream of tin droplets, and this process can generate tin particles that can pass through the intermediate focus (IF) of the LPP light source and impinge on the pellicle of the reticle. While the pellicle reduces the adverse impact on the photolithographically processed wafer, it cannot completely prevent such adverse impact.
Another failure mode can occur due to particle contamination that can enter the space between the reticle membrane and the pellicle membrane. This is possible because the pellicle is usually not hermetically sealed to the reticle, but rather the reticle frame by which the pellicle membrane is mounted over the reticle surface typically has vent holes to equalize pressure on opposite sides of the thin and fragile pellicle membrane. Particles can thus ingress through the vent holes into the space defined between the reticle surface and the pellicle membrane. These particles are of particular concern, both because they are closer to the focal plane of the reticle and because if these particles dislodge then they can then fall onto and adhere to the surface of the reticle, leading to wafer defects.
Disclosed herein are pellicle cleaning apparatuses and methods that effectively clean the pellicle with the advantageously reduced gas flow rates. The disclosed approaches in some embodiments employ two or (in the illustrative examples) three coadunate physical forces that operate synergistically to increase the particle removal efficiency in cleaning the pellicle membrane and frame.
Without loss of generality, and for convenience in describing spatial relationships herein, an x-y-z coordinate system is shown in
The pellicle membrane 14 is typically thin to enable it to transmit EUV light. For example, in some nonlimiting illustrative embodiments the pellicle membrane may have a thickness of 10-100 nanometers, although greater or lesser thicknesses are contemplated. The pellicle membrane 14 may be made of various materials, such as by way of nonlimiting illustrative example graphene, carbon nanotubes, or so forth. It will be appreciated that the pellicle membrane 14 is relatively fragile, due to the thinness of the pellicle membrane 14. Without loss of generality, the illustrative pellicle 12 of
The pellicle frame 16 supports the fragile pellicle membrane 14 over the surface of the reticle at a separation distance sufficient to take the pellicle membrane 14 outside the focal plane of the light impinging on the reticle surface during the lithography process. For example, the pellicle frame 16 may have a thickness of several millimeters (mm) to position the pellicle membrane 14 over the reticle surface, in some nonlimiting illustrative embodiments. The pellicle frame 16 can be made from suitable materials such as anodized aluminum, stainless steel, plastic, silicon (Si), titanium, silicon dioxide, aluminum oxide (Al2O3), or titanium dioxide (TiO2). Typically, the pellicle frame 16 is a rectangular or other encircling frame that coincides with and supports the full perimeter of the pellicle membrane 14. This is generally shown in
The adhesive layer 18 is used to secure the pellicle membrane 14 to the pellicle frame 16. Suitable adhesives may, by way of nonlimiting illustration, include a silicon, acrylic, epoxy, thermoplastic elastomer rubber, acrylic polymer or copolymer, or combinations thereof. In some embodiments, the adhesive can have a crystalline and/or amorphous structure. In some embodiments, the adhesive 18 can have a glass transition temperature (Tg) that is above a maximum operating temperature of the photolithography system, to prevent the adhesive 18 from exceeding the Tg during operation of the system. It should be noted that
The pellicle cleaning system diagrammatically shown in
Although the ultrasonic wave 22 applied by the ultrasonic transducer or transducer array 20 can be effective in dislodging particles from the pellicle membrane 14, it has some limitations as recognized herein. First, if the particles are electrostatically charged, this can strengthen the adherence of the particles to the membrane 14, potentially preventing the ultrasonic wave 22 from removing the particles. Second, even if a particle is dislodged, it could re-adhere at another position along the membrane 14, especially if the particle is electrostatically charged and thereby electromagnetically attracted to the pellicle membrane 14. Third, the ultrasonic wave 22 is much less effective, or possibly even wholly ineffective, at dislodging particles that may be adhered to the pellicle frame 16. Compared with the thin pellicle membrane 14 (e.g., 10-100 nanometer thickness in some examples), the pellicle frame 16 is far more massive and hence at best a greatly attenuated vibration will be induced in the more massive pellicle frame 16 when compared with the substantial vibration 24 induced in the thin membrane 14. In view of this recognition, the pellicle cleaning system diagrammatically shown in
With continuing reference to
A purpose of exposing the pellicle 12 to the ionized gas generated by at least one alpha ionizer 30 is to neutralize static charge of any electrostatically charged particles adhered to the pellicle membrane 14 and/or to the pellicle frame 16. This neutralization occurs because unlike charges attract - hence, a negatively charged particle will attract positively charged ions of the ionized gas flow thus bringing positive electrical charge to neutralize the negative charge on the negatively charged particle. Similarly, a positively charged particle will attract negatively charged ions of the ionized gas flow thus bringing negative electrical charge to neutralize the positive charge on the positively charged particle. By neutralizing the electrical charge on any electrostatically charged particles adhered to the pellicle membrane 14, the electrostatic adhesion of such particles is removed, thus synergistically enhancing the ability of the membrane vibration 24 induced by the ultrasonic wave 22 to dislodge such now-neutralized particles.
Advantageously, alpha particles emitted by a typical alpha-emitting radioisotope such as 210Po travel only a short distance in air, and do not penetrate human skin, thus ensuring safety of the pellicle cleaning apparatus incorporating the alpha ionizer(s) 30. Moreover, it is the ionized gas produced by the emitted alpha particles that is operative in the pellicle cleaning process, rather than the alpha particles themselves.
With particular reference to
The synergistic combination of applying the ultrasonic wave 22 to the pellicle 12 using the ultrasound transducer or transducer array 20 and simultaneously exposing the pellicle 12 to ionized gas generated by at least one alpha ionizer 30 is thus operative to enhance particle removal efficiency in dislodging particles from the membrane 14. However, as previously noted the ultrasonic wave 22 may be less effective at dislodging particles from the pellicle frame 16, and moreover there is still potential for the dislodged particles to re-adhere to either the pellicle membrane 14 or to the frame 16 (though this possibility of re-adhesion is reduced by neutralization of the static charge on the particles by action of the ionized gas, thus suppressing the electrostatic adhesion mechanism).
To address these further potential issues, the illustrative pellicle cleaning apparatus of
The use of two gas nozzles 40a and 40b in the illustrative embodiment has advantages for cleaning the pellicle mount 16. As previously noted, the diagrammatically illustrated pellicle holder 4 includes a motor 6 or other mechanism for translating the held pellicle 12 in a reciprocating movement (indicated by arrow 42 in
In some embodiments, during movement of the pellicle 12 in the negative direction (illustrative -y direction), the gas is flowed on the pellicle 12 using the first nozzle 40a to produce the flow of the gas having the flow component in the positive direction (+y direction). During this pellicle movement in the negative direction, the second gas nozzle 40b is not used to flow gas. In this way, the inside edges of the pellicle frame 16 opposite the first nozzle 40a face the gas flow from the first nozzle 40a, thus providing gas flow on those inside edge to dislodge particles that may be adhered to those inside frame edges. In similar fashion, during movement of the pellicle 12 in the positive direction (+y direction), the gas is flowed on the pellicle 12 using the second nozzle 40b to produce the flow of the gas having the flow component in the negative direction (-y direction). During this pellicle movement in the positive direction, the first gas nozzle 40a is not used to flow gas. In this way, the inside edges of the pellicle frame 16 opposite the second nozzle 40b face the gas flow from the second nozzle 40b, thus providing gas flow on those inside edge to dislodge particles that may be adhered to those inside frame edges. To achieve this switching of operation of the first and second nozzles 40a and 40b, in the illustrative embodiment of
The gas nozzle(s) 40 also operate synergistically with the ultrasonic wave 22 generated by the ultrasound transducer or transducer array 20 to dislodge particles from the pellicle membrane 14, by providing forces operating in both the z-direction (from the longitudinal ultrasound wave 22 having pressure variation along the z-direction producing the vibration 24 of the membrane 14 in the z-direction) and in the y-direction (from the gas flow output by the nozzle(s) 40). These combined forces synergistically increase the particle removal efficiency in cleaning the pellicle membrane 14 and frame 16 as compared with either mechanism operating alone.
Furthermore, the ionizer(s) 30 operate synergistically with the gas nozzle(s) 40 to dislodge particles from both the pellicle membrane 14 and the frame 16. This is because neutralization of any electrostatically charged particles by the ionized gas output by the ionizer(s) 30 reduces or eliminates electrostatic adhesion of the particles, thus assisting the gas flow from the nozzle(s) 40 in dislodging the particles.
Thus, any two, or all three, of the mechanisms implemented by the pellicle cleaning apparatus of
In some embodiments, the pellicle cleaning apparatus of
In some embodiments, each gas nozzle 40 is designed as a blade nozzle which generates a flat curtain of gas flow using a nozzle aperture in the form of a slit or a linear array of apertures. Thus, the blade nozzle 40 provides a high gas flow rate at the surface of the pellicle 12 in the form of a flat curtain of gas flow, but with a low total volume of gas. This makes efficient use of the gas supply, and also reduces the likelihood of damaging the thin and fragile pellicle membrane 14. Moreover, the area of the pellicle 12 can be relatively large, for example some pellicles for EUV reticles can be rectangular with a maximum length on the order of several tens of centimeters. Hence, the flat curtain of gas flow from the blade nozzle 40 preferably extends in a linear direction on that order of length. To achieve these features, in some embodiments the nozzle 40 includes a nozzle aperture comprising a slit or a linear array of apertures arranged parallel with the pellicle membrane 14 of the pellicle 12 during the flowing of the gas via the nozzle 40. For the x-y-z coordinate system of
With reference to
With reference to
To facilitate assembly of the two blades 51 and 52 to form the gas nozzle 40, the illustrative blades 51 and 52 have respective openings 66 and 68 (labeled only in
The slit or linear array of apertures 56 advantageously forms a flat gas curtain that can extend along the width of the pellicle 12 in the x-direction (referring to the x-y-z coordinate system of
With reference now to
The disclosed pellicle cleaning apparatuses and methods advantageously provide high particle removal efficiency by the disclosed gas nozzle design and the disclosed dynamic control sequence of nozzle flow to reduce turbulence and disengage particles located on the pellicle frame 16 (including corners, vent holes, or other features thereof) so as to reduce or eliminate particles falling from the pellicle onto the reticle during EUV lithography. Use of the disclosed gas nozzles 40, alpha ionizers 30, and ultrasonic wave 22 provides three coadunate physical forces that operate together to remove particles from the EUV pellicle membrane 14 and frame 16. Advantageously, both the pellicle membrane 14 and the pellicle frame 16 are cleaned by these three coadunate physical forces.
In the following, some further embodiments are described.
In a nonlimiting illustrative embodiment, a pellicle cleaning method comprises: flowing a gas on a pellicle comprising a pellicle membrane mounted on a pellicle frame using at least one gas nozzle; during the flowing, moving the pellicle respective to the at least one gas nozzle; during the flowing, exposing the pellicle to ionized gas generated by at least one alpha ionizer; and during the flowing, applying ultrasonic wave to the pellicle using an ultrasound transducer or transducer array.
In a nonlimiting illustrative embodiment, a method of circuit layout patterning includes: performing a pellicle cleaning method as set forth in the immediately preceding paragraph on a pellicle comprising a pellicle membrane mounted on a pellicle frame; after the pellicle cleaning method is performed, affixing the pellicle to a reticle; loading the reticle with the affixed pellicle to an exposing chamber; after the loading and in the exposing chamber, exposing light on a photoresist layer disposed on a substrate using the reticle to form a patterned photoresist layer; and forming a circuit layout pattern by developing and etching the patterned photoresist layer.
In a nonlimiting illustrative embodiment, a pellicle cleaning apparatus includes a pellicle holder, at least one gas nozzle arranged to flow a gas on an associated pellicle held by the pellicle holder, and at least one ionizer arranged to expose the associated pellicle held by the pellicle holder to ionized gas. In some embodiments, the apparatus further includes an ultrasound transducer or transducer array arranged to apply an ultrasonic wave to the associated pellicle held by the pellicle holder.
In a nonlimiting illustrative embodiment, a pellicle cleaning apparatus includes a pellicle holder, a gas nozzle arranged to flow a gas on an associated pellicle held by the pellicle holder, and an ultrasound transducer or transducer array arranged to apply an ultrasonic wave to the associated pellicle held by the pellicle holder. The gas nozzle has a nozzle aperture comprising a slit or a linear array of apertures arranged parallel with a pellicle membrane of the pellicle.
In some embodiments of the pellicle cleaning apparatus of the immediately preceding paragraph, the gas nozzle includes first and second nozzle blades that are secured together to form a plenum between the first and second nozzle blades. A gas inlet is in fluid communication with the plenum for the gas that is flowed on the pellicle to enter the plenum. The slit or linear array of apertures is located at an interface between the first and second nozzle blades, and the slit or linear array of apertures is in fluid communication with the plenum.
The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.