The present disclosure relates to a device for storing liquid, a system for processing a substrate, and a method of identifying a liquid level.
In a semiconductor device manufacturing process, processing is performed in some cases by supplying a processing gas obtained by vaporizing a processing liquid, which is a raw material, to a semiconductor wafer (hereinafter referred to as a “wafer”), which is a substrate. In other cases, processing is performed by supplying the processing liquid in a liquid state to the wafer. In these cases, a mechanism for detecting the level of liquid stored in a tank may be required.
Patent Document 1 discloses a liquid level sensor configured so as to be mounted on an outer surface of bottles of various sizes by attaching an electrode to a knitted structure. This liquid level sensor is configured to detect the level of liquid contained in a corresponding bottle based on a change in electrostatic capacitance detected by the electrode.
The present disclosure provides some embodiments of a technique for identifying the level of liquid in a tank based on vibrations applied to the liquid.
According to one embodiment of the present disclosure, a device for storing a liquid used to process a substrate includes a tank configured to store the liquid, a fin, a width dimension of which in a direction intersecting a liquid level of the liquid is configured to vary according to a position of a depth direction of the liquid, inserted into the tank, a vibration applier configured to apply a vibration to the fin, a vibration detector configured to detect the vibration when a wave formed on a surface of the liquid reaches an inner wall surface of the tank by the fin to which the vibration is applied from the vibration applier, and a liquid level identifier configured to identify a level of the liquid in the tank based on a correspondence relationship between a magnitude of an amplitude of the vibration detected by the vibration detector and the width dimension of the fin.
According to the present disclosure, the level of liquid in a tank can be identified based on vibrations applied to the liquid.
A configuration example of a system for processing a wafer W (wafer processing system 1) of the present disclosure will now be described with reference to
The raw material liquid storage device 11 includes, for example, a tank 4 for storing the liquid L, a heater 112 for heating the liquid L, a cabinet 111 for accommodating the tank 4, a carrier gas supply line 101 for supplying a carrier gas to the tank 4, and a raw material gas supply line 102 for supplying the processing gas obtained by vaporizing the liquid L together with a carrier gas to the wafer processor 12. The raw material liquid storage device 11 corresponds to a “device for storing liquid” in this example and includes a mechanism for identifying the level of the liquid L stored in the tank 4. A detailed configuration of the raw material liquid storage device 11 will be described later.
In addition, the wafer processor 12 includes, for example, a processing container 121 in which the wafer W is processed, a stage 122 for holding the wafer W in the processing container 121, a gas shower head 123 for introducing the processing gas into the stage 122, and a vacuum exhauster 124 for performing vacuum exhaust of the interior of the processing container 121.
In the wafer processing system 1 having the above-described configuration, the wafer W to be processed is loaded into the processing container 121 and placed on the stage 122, and the carrier gas is introduced into the tank 4 by opening valves V1 to V3 of the carrier gas supply line 101 and the raw material gas supply line 102. The processing gas obtained by vaporizing the liquid L in the tank 4 is then supplied to the processing container 121 from the raw material gas supply line 102 via the gas shower head 123. Desired processing is performed on the wafer W by the processing gas supplied to the processing container 121, and then the processing gas is exhausted from the processing container 121 by the vacuum exhauster 124.
The raw material liquid storage device 11 constituting the wafer processing system 1 of this example is provided with the mechanism for identifying the level of the liquid L stored in the tank 4. By identifying the level of the liquid L in the tank 4, it is possible to previously discern a timing for replacing the tank 4 or to perform control such as adjustment of a heating temperature of the liquid L or a supply flow rate of the carrier gas according to the level of the liquid L.
Here, a general method of identifying the level of the liquid L in the tank 4 is to insert a float type sensor into the tank 4 and detect the liquid level corresponding to a floated height position of the sensor. However, since the float type sensor is configured to output the detected floated height position as an electrical signal, when handling flammable liquid L, it may be difficult to install the sensor in an area that comes into direct contact with the flammable liquid L or vapor of the flammable liquid L.
Further, in a method of detecting the liquid level from an outer wall surface of the tank 4 using a capacitive sensor, when another metal is present in the vicinity of an installation location of the sensor, there is a risk that the metal may affect a result of detection of the liquid level.
Therefore, the raw material liquid storage device 11 of this example applies a vibration to the liquid L in the tank 4 and detects the vibration when a wave formed on the surface of the liquid L reaches an inner wall surface of the tank 4, so that a height position of a liquid level can be identified. Hereinafter, a configuration example of the mechanism for identifying the level of the liquid L will be described with reference to
In particular, the fin 2 in examples shown in
In
Further, when individually viewed the convex portions 201, the width dimensions of the portions (b) and (c) become gradually smaller downward in the depth direction of the liquid, and the width dimensions of the portions (c) and (f) become gradually larger downward in the depth direction of the liquid. Further, the portion (g) of the convex portions 201 located at the lowest location is configured to have the width dimension which becomes gradually larger downward in the depth direction of the liquid and becomes constant in the middle.
In addition, a member arranged to protrude toward a lateral side from a central axis C of the fin 2 shown by a dash-single dotted line is referred to as a “fin member 20”. In
The number of the fin members 20 constituting the fin 2 is not limited to two. As shown in
The fin 2 configured as above is supported while being suspended by a lower end of a support rod 21 extending along the central axis C inside the liquid L. The support rod 21 penetrates a ceiling plate 401 provided on an upper surface of the tank 4 and is inserted into the tank 4. The support rod 21 is fixed at a position (fixing portion 41) at which the support rod 21 penetrates the ceiling plate 401 by, for example, welding. Therefore, the interior of the tank 4 is kept airtight, and the support rod 21 is configured so as not to move in a vertical direction or rotate around the central axis C.
As shown in
When a reciprocating vibration is applied to the upper end portion of the support rod 21 in a direction (direction indicated by a dashed arrow in
The vibration applied to the fin 2 by the vibration applier 3 is not limited to the example of the reciprocating vibration. For example, as in the fins 2a and 2b shown in
When the vibration is applied to the fin 2 by the vibration applier 3, a wave is formed on the surface of the liquid L stored in the tank 4. The tank 4 is provided with a vibration detector configured to detect the vibration when the wave propagates and reaches an inner wall surface of the tank 4. As shown in
The linear piezoelectric element 51 detects the vibration of the sidewall portion 402 and serves to output the same as a change in voltage. As the linear piezoelectric element 51, a known element called a piezoelectric wire or a piezoelectric cable may be used. The linear piezoelectric element 51 is provided so as to extend in a vertical direction to correspond to the arrangement area of the fin 2 in the tank 4.
In this case, the linear piezoelectric element 51 may be arranged in a straight line in the vertical direction along the depth direction of the liquid L in the tank 4. In addition, for example, when the linear piezoelectric element 51 is provided to correspond to the arrangement area of the fin 2 in the tank 4 of a cylindrical shape, the linear piezoelectric element 51 may be wound in a coil shape along an outer wall surface of the tank 4.
As shown in
Here, the controller 10 functions as a liquid level identifier configured to identify the level of the liquid L in the tank 4, based on a correspondence relationship between the magnitude of the amplitude of the vibration detected by the vibration detector (including the linear piezoelectric element 51 and the signal outputter 52) and the width dimension of the fin 2. A specific method for identifying the liquid level will be described with reference to
For example, in
The signal outputter 52 outputs a digital signal 602 corresponding to a change in the voltage input from the linear piezoelectric element 51. In this case, the change in the voltage input from the linear piezoelectric element 51 occurs when the wave 601 formed on the surface of the liquid L vibrates the sidewall portion 402. Thus, the digital signal 602 output from the signal outputter 52 is a signal having a frequency and an amplitude corresponding to the wave 601. Therefore, by interpreting the digital signal 602 output from the signal outputter 52, it is possible to check a state of the wave 601 formed on the surface of the liquid L in the tank 4.
On the other hand, as described above, the fin 2 is configured such that the width dimension thereof in the direction (horizontal direction) intersecting the liquid level of the liquid L varies according to a position in the depth direction of the liquid L. When a vibration is applied to the fin 2 configured as above via the support rod 21, stirring force based on a moment of a magnitude corresponding to the width dimension of the fin 2 (the fin member 20) (which coincides with a distance R from the support rod 21 (the central axis C) in this example) is applied to the surface of the liquid L.
For example, at the liquid level shown in
In this way, when different stirring forces are applied according to the depth of the liquid L, the amplitude of the wave 601 formed on the surface of the liquid L varies. That is, the wave 601 with a large amplitude is formed at a height position at which the convex portion 201 with a large width dimension R is arranged. On the other hand, the wave 601 with a small amplitude is formed at a height position at which the convex portion 201 with a small width dimension R is arranged.
Then, the digital signal 602 having an amplitude corresponding to the amplitude of the wave 601 is output from the signal outputter 52. Therefore, the level of the liquid L in the tank 4 may be identified based on a correspondence relationship between the magnitude of the amplitude of the digital signal 602 output from the signal outputter 52, that is, the magnitude of the amplitude of the vibration of the sidewall portion 402, and the width dimension R of the fin 2.
In practice, the wave 601 in the tank 4 has a complex waveform due to a position at which the wave 601 is formed by the fin 2, a propagation direction of the wave 601, a distance between a position at which the wave 601 is formed and the sidewall portion 402, formation of a reflected wave of the wave 601 on the inner wall surface of the sidewall portion 402, and the like. On the other hand, the frequency of the vibration applied from the vibration applier 3 may be recognized in advance. Thus, in the configuration shown in
Therefore, a component of a wave having a frequency common to the vibration applied from the vibration applier 3 and having the largest amplitude may be extracted from the digital signal 602 output from the signal outputter 52 using, for example, a filter. By such signal processing, the digital signal 602 corresponding to the wave 601 formed by the fin 2 may be obtained as schematically shown in
For the sake of convenience in description, the frequency of the vibration applied from the vibration applier 3 to the fin 2 is constant, but the frequency of the vibration applied to the fin 2 may vary from the viewpoint of detecting the magnitude of the amplitude.
In addition, for example, when a tip of the carrier gas supply line 101 is inserted into the liquid L to obtain the processing gas by bubbling, another force that forms the wave 601 on the surface of the liquid L is applied in addition to the vibration of the fin 2. In this case, the level of the liquid L may be identified by, for example, stopping the bubbling and vibrating the fin 2 during a period when the processing gas is not supplied.
Therefore, for example, the controller 10 acquires the change in the signal level of the digital signal 602 over time from the signal outputter 52 to identify the level of the liquid L based on a correspondence relationship with the shape of the fin 2 that is recognized in advance. In this respect, the controller 10 constitutes the liquid level identifier of the present disclosure.
Due to a change in an actually-detected signal level of the digital signal 602, resolution of the actually-detected signal level may be lower than that exemplified in
Based on the identified level of the liquid L in the tank 4, a timing of replacing the tank 4 may be checked in advance or the operation of the wafer processing system 1 may be controlled according to the level of the liquid L.
In particular, the fin 2 described with reference to
The raw material liquid storage device 11 of the present disclosure provides the following effects. Since the level of the liquid L in the tank 4 is identified based on the vibration applied to the liquid L from the fin 2, the vibration may be detected from the outer wall surface of the sidewall portion 402. As a result, unlike a float type sensor, the liquid level may be measured without inserting a device that inputs and outputs an electric signal into the liquid L.
Instead of the fins 2, 2a, and 2b configured as described with reference to
In the example shown in
In addition, the sensor such as the linear piezoelectric element 51 is not limited to being attached to the outer wall surface of the sidewall portion 402. For example, the linear piezoelectric element 51, the patch-shaped piezoelectric element, or the acceleration sensor may be embedded in the sidewall portion 402.
Further, the raw material liquid storage device 11 is not limited to being applied to the wafer processing system 1 configured to vaporize the liquid L, which is a raw material of the processing gas, and supply the same to the wafer processor 12. For example, the raw material liquid storage device 11 of the present disclosure may be applied to a wafer processing system that performs liquid processing by supplying the liquid L stored in the tank 4 directly to the wafer W.
It should be noted that the embodiments disclosed herein are exemplary in all aspects and are not restrictive. The above-described embodiments may be omitted, replaced, or modified in various forms without departing from the scope and spirit of the appended claims.
Number | Date | Country | Kind |
---|---|---|---|
2022-056967 | Mar 2022 | JP | national |
Filing Document | Filing Date | Country | Kind |
---|---|---|---|
PCT/JP2023/010711 | 3/17/2023 | WO |