Dielectric ceramic composition and ceramic capacitor

Information

  • Patent Application
  • 20030054942
  • Publication Number
    20030054942
  • Date Filed
    April 03, 2002
    22 years ago
  • Date Published
    March 20, 2003
    21 years ago
Abstract
A dielectric ceramic composition includes 100 mol % of an oxide of Ba, Ti and Zr, 0.25 to 1.5 mol % of an oxide of Re, Re representing one or more elements selected from the group consisting of Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Y, 0.1 to 0.4 mol % of an oxide of Mg, 0.03 to 0.6 mol % of oxides of one or more elements selected from the group consisting of Mn, V and Cr and 0.02 to 0.3 mol % of oxides of one or two elements of Mo and W. The ceramic composition further includes a glass component having SiO2 and x in the oxide of Ba(Ti1−xZrx)O3 ranges from about 0.05 to about 0.26.
Description


FIELD OF THE INVENTION

[0001] The present invention relates to a ceramic capacitor and ceramic compositions therefor; and, more particularly, to reduction resistive dielectric ceramic compositions suitable for use as a dielectric layer of a ceramic capacitor having internal electrodes made of a base metal such as Ni and a ceramic capacitor fabricated by employing such ceramic compositions as a dielectric layer thereof.



BACKGROUND OF THE INVENTION

[0002] Recently, a base metal, e.g., Ni, is widely used in forming internal electrodes of multilayer ceramic capacitors for the purpose of reducing manufacturing costs. In case the internal electrodes are composed of the base metal, it is required that chip-shaped laminated bodies including therein the internal electrodes be sintered in a reductive atmosphere in order to prevent an oxidization of the internal electrodes. Accordingly, a variety of reduction resistive dielectric ceramic compositions have been developed.


[0003] Recent trend towards ever more miniaturized and dense electric circuits intensifies a demand for a further scaled down multilayer ceramic capacitor with higher capacitance. Keeping up with such demand, there has been made an effort to fabricate thinner dielectric layers and to stack a greater number of the thus produced dielectric layers.


[0004] However, when the dielectric layers are thinned out, a voltage applied to a unit thickness intrinsically increases. Accordingly, the operating life of the dielectric layers is shortened and thus a reliability of the multilayer ceramic capacitor is also deteriorated.



SUMMARY OF THE INVENTION

[0005] It is, therefore, an object of the present invention to provide highly reliable dielectric ceramic compositions and ceramic capacitors prepared by employing such dielectric ceramic compositions in forming dielectric layers thereof, wherein the dielectric ceramic compositions exhibit such electrical characteristics as a dielectric constant equal to or greater than 10,000, a capacitance variation of −80% to +30% (based on a capacitance obtained at a temperature of +20° C.) in the temperature range from −25° C. to +85° C., a dielectric loss “tanδ” of 10.0% or less and an accelerated life of 200,000 seconds or greater.


[0006] In accordance with a preferred embodiment of the present invention, there is provided a dielectric ceramic composition comprising: 100 mol % of an oxide of Ba, Ti and Zr, the content of the oxide of the Ba, Ti and Zr being calculated by assuming that the oxide thereof is Ba(Ti1−xZrx)O3; 0.25 to 1.5 mol % of an oxide of Re, Re representing one or more elements selected from the group consisting of Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Y, the content of the oxide of the Re being calculated by assuming that the oxide thereof is Re2O3; 0.1 to 0.4 mol % of an oxide of Mg, the content of the oxide of the Mg being calculated by assuming that the oxide thereof is MgO; 0.03 to 0.6 mol % of oxides of one or more elements selected from the group consisting of Mn, V and Cr, the contents of the oxides of the Mn, V and Cr being calculated by assuming that the oxides thereof are Mn2O3, V2O5 and Cr2O3, respectively; 0.02 to 0.3 mol % of oxides of one or two elements of Mo and W, the contents of the oxides of Mo and W being calculated by assuming that the oxides thereof Mo3O3, WO3, respectively; and a glass component including SiO2, wherein x in the oxide of Ba(Ti1−xZrx)O3 ranges from about 0.05 to about 0.26.







BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The above and other objects and features of the present invention will become apparent from the following description of a preferred embodiment given in conjunction with the accompanying drawings in which:


[0008]
FIG. 1 represents a schematic cross sectional view illustrating a multilayer ceramic capacitor;


[0009]
FIG. 2 is a triangular composition diagram for showing compositions of B2O3—SiO2—MO in a unit of mol %; and


[0010]
FIG. 3 sets forth a triangular composition diagram for illustrating compositions of Li2O—SiO2—MO in a unit of mol %.







DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Compound powders of BaCO3, TiO2, ZrO2, Re2O3, MgO, Mn2O3 V2O5, Cr2O3, Mo3, WO3 and a glass component including SiO2 were weighed in amounts as specified in the accompanying Tables 1-1 to 1-6 and mixed for about 20 hours by a wet method in a ball mill containing therein PSZ (partially sterilized zirconia) balls and water to thereby obtain a ceramic slurry. The produced ceramic slurry (containing 30% of water) was dehydrated and then dried by being heated at about 200° C. for 5 hours. It should be noted that “Re” is selected, e.g., from the group consisting of Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Y.


[0012] Thereafter, the dried ceramic slurry was ground and then calcined in air at about 800° C. for 3 hours. The calcined slurry was then crushed by employing a wet method in a ball mill added with ethanol for about 10 hours. Next, the crushed ceramic slurry was dried by being heated at about 200° C. for 5 hours, thereby obtaining the powder of the calcined ceramic slurry.


[0013] In a following step, a dielectric ceramic slurry was obtained by mixing and grinding 1000 g (100 parts by weight) of the powder of the calcined ceramic slurry, 15 wt % of an organic binder and 50 wt % of water in a ball mill, wherein the organic binder includes acrylic ester polymer, glycerin, and a solution of condensed phosphate.


[0014] Next, the dielectric slurry was subjected to a vacuum air separator to remove air bubbles therefrom and formed into a thin film coated on a polyester film by using a reverse roll coater. Thus produced ceramic thin film on the polyester film was heated and dried at about 100° C. and then diced to thereby obtain square ceramic green sheets having a thickness of about 5 μm and a size of about 10 cm×10 cm.


[0015] Meanwhile, 0.9 g of ethyl cellulose dissolved in 9.1 g of butyl carbitol and 10 g of Nickel powder having an average diameter of about 0.5 μm were loaded and stirred in a stirrer for 10 hours to form a conductive paste for use in forming internal electrodes of ceramic capacitors. Thereafter, the conductive paste was printed on the prepared ceramic green sheets to form conductive patterns thereon and then the printed conductive paste was dried.


[0016] Subsequently, ten ceramic green sheets having the conductive patterns thereon were stacked against each other with the conductive patterns facing upward, thereby forming a laminated body. Every two neighboring sheets were disposed in such a manner that the conductive patterns provided thereon were shifted by one half of a pattern size along the length direction. The laminated body also included one or more ceramic dummy sheets stacked against each of the uppermost and the lowermost ceramic green sheets having conductive patterns thereon, the ceramic dummy sheets representing ceramic green sheets without having conductive patterns thereon.


[0017] Next, the laminated body was pressed with a load of about 40 tons at about 50° C. along the stacking direction of the ceramic sheets in the laminated body. Afterwards, the pressed laminated body was diced into a multiplicity of chip shaped ceramic bodies having a size of about 3.2 mm×1.6 mm.


[0018] Thereafter, Ni external electrodes were formed at two opposite sides of each chip shaped ceramic body by, e.g., a dipping method, the internal electrodes being alternately exposed to the two opposite sides of each chip shaped ceramic body. Then, the chip shaped ceramic bodies were loaded into a furnace capable of controlling an atmosphere therein and the organic binder contained in the loaded ceramic bodies was removed by heating the furnace in an N2 atmosphere. Then, the binder-removed chip shaped ceramic bodies were sintered at about 1200° C. in a non-oxidative atmosphere with oxygen partial pressure being in 10−5 to 10−8 atm order range. Thereafter, the sintered chip-shaped ceramic bodies were re-oxidized in a neutral atmosphere to thereby obtain multilayer ceramic capacitors as shown in FIG. 1, wherein reference numerals 10, 12 and 14 in the FIG. 1 represent dielectric layers, internal electrodes and external electrodes, respectively.


[0019] Tables 2-1 to 2-6 exhibit a measurement result of electrical characteristics obtained from the thus produced multilayer ceramic capacitors, wherein a thickness of each dielectric layer incorporated in the capacitors was about 3 μm.


[0020] The electrical characteristics of the multilayer ceramic capacitors were obtained as follows.


[0021] (A) Relative permittivity or dielectric constant εs was computed based on a facing area of a pair of neighboring internal electrodes, a thickness of a dielectric layer positioned between the pair of neighboring internal electrodes, and the capacitance of a multilayer ceramic capacitor obtained under the condition of applying at 20° C. a voltage of 1.0 V (root mean square value) with a frequency of 1 kHz.


[0022] (B) Dielectric loss tanδ (%) was obtained under the same condition as established for measuring the permittivity cited above.


[0023] (C) Resistivity (Ω cm) was acquired by measuring a resistance between a pair of external electrodes after DC 25 V was applied for 60 seconds at 20° C. The number following “E” in the notation of a resistivity value presented in the accompanying Tables 2-1 to 2-6 represents an order. For instance, 4.8E+12 represents 4.8×1012.


[0024] (D) Accelerated life (second) was obtained by measuring time period until an insulation resistivity (ρ) becomes 1×1010 Ω cm in a DC electric field of 20 V/μm at 150° C.


[0025] (E) Capacitance variation ΔC/C20 (%) was obtained by measuring capacitances at −25° C. and +85° C. in a thermostatic (or constant temperature) oven under the condition of applying a voltage of 1 V (rms value) with a frequency of 1 kHz, wherein C20 represents a capacitance at 20° C. and Δ C represents the difference between C20 and a capacitance measured at −25° C. or +85° C.


[0026] As clearly seen from Tables 1-1 to 1-6 and Tables 2-1 to 2-6, multilayer ceramic capacitors with highly improved reliability having permittivity (ε) equal to or greater than 10,000, capacitance variation ΔC/C20 within the range from −80% to +30% at temperatures ranging from −25° C. to +85° C., tan δ of 10.0% or less and accelerated life of 200,000 seconds or greater could be obtained from the above samples sintered in a non-oxidative atmosphere even at a temperature of 1200° C. or lower in accordance with the present invention.


[0027] However, samples 1 to 3, 25 to 27, 29, 34, 36, 41, 42, 58, 61, 62, 66, 67, 71, 72, 75, 79, 82, 84 to 86, 108 to 111, 115, 116, 122, 123, 131, 137, 138, 142, 143, 146, 150, 153, 155, 159 (marked with “” at the column of sample numbers in Tables) could not satisfy the above-specified electrical characteristics and further, when these samples are employed, a highly densified ceramic body may not be obtained by the sintering at 1200° C. Therefore, it appears that such samples fall outside a preferable compositional range of the present invention.


[0028] The reasons why the preferable compositional range for the dielectric ceramics in accordance with the present invention should be limited to certain values will now be described.


[0029] First, when the content of an oxide of a rare-earth element represented by Re is 0 mol % in terms of Re2O3 (i.e., assuming the oxide of Re is in the form of Re2O3) as in the sample 36, the tanδ thereof goes over 10.0% or capacitance variation ΔC/C20 deviates from the range from −80% to +30% at temperatures ranging from −25° C. to +85° C.; whereas when the oxide of Re is set to be 0.25 mol % in terms of Re2O3 as in sample 37, the desired electrical characteristics can be successfully obtained.


[0030] Further, when the content of the oxide of the rare-earth element Re is 2.0 mol % in terms of Re2O3 as in the sample 41, a highly densified ceramic body may not be obtained by the sintering at 1200° C. However, when the content of the oxide of Re is set to be 1.5 mol % in terms of Re2O3 as in sample 40, the desired electrical characteristics can be successfully obtained.


[0031] Accordingly, the preferable range of the content of oxide of the rare-earth element Re is from 0.25 to 1.5 mol % in terms of Re2O3.


[0032] It is noted that same effects can be produced regardless of whether a single rare-earth element is used as in samples 43 to 53 or two or more of rare-earth elements are used together as in samples 54 to 57 as long as the above-described preferable content range of the rare-earth element Re is satisfied.


[0033] When the content of the oxide of Mg is 0 mol % in terms of MgO as in the sample 58, the tanδ thereof goes over 10.0% or capacitance variation ΔC/C20 of the produced multilayer ceramic capacitors deviates from the range from −80% to +30% when the temperature varies from −25° C. to +85° C.; whereas when the oxide of Mg is set to be 0.1 mol % in terms of MgO as in sample 59, the desired electrical characteristics can be successfully obtained.


[0034] In addition, when the content of the oxide of Mg is 0.6 mol % in terms of MgO as in the sample 61, the relative permittivity of the produced multilayer ceramic capacitors may become equal to or less than 10,000 or the capacitance variation ΔC/C20 of the produced multilayer ceramic capacitors deviates from the range from −80% to +30% when the temperature varies from −25° C. to +85° C.; and accordingly, the desired accelerated life cannot be obtained. However, when the content of the oxide of Mg is set to be 0.4 mol % in terms of MgO as in sample 60, the desired electrical characteristics can be successfully obtained.


[0035] Accordingly, the content of the oxide of Mg desirably ranges from 0.1 to 0.4 mol % in terms of MgO.


[0036] When the content of an oxide of each element Mn, V or Cr is 0.02 mol % in terms of Mn2O3, V2O5 or Cr2O3, as in the samples 1 to 3, the desired accelerated life of the produced multilayer ceramic capacitors may not be obtained; whereas when the total content of the oxides of Mn, V and Cr is set to be 0.03 mol % in terms of Mn2O3, V2O5 and Cr2O3, as in samples 4 to 6, the desired characteristics can be successfully attained.


[0037] Further, when the content of an oxide of Mn, V or Cr is 0.7 mol % in terms of Mn2O3, V2O5 or Cr2O3, as in the samples 25 to 27, the dielectric constant of the capacitors becomes equal to or less than 10,000. However, when the content of sum of the oxides of Mn, V and Cr is set to be 0.6 mol % in terms of Mn2O3, V2O5 and Cr2O3, as in samples 22 to 24, the desired characteristics can be successfully attained.


[0038] Accordingly, it is preferable that the total amount of oxides of Mn, V and Cr ranges from 0.03 to 0.6 mol % in terms of Mn2O3, V2O5 and Cr2O3.


[0039] It is to be noted that same effects can be obtained regardless of whether an oxide of one of the elements Mn, V and Cr as in samples 4 to 6 and 13 to 18 is used alone or two or more thereof are used together as in samples 7 to 12 and 19 to 24 as long as the total content thereof satisfies the above specified range.


[0040] Further, the dielectric ceramic composition in accordance with the present invention may further include one or more oxides selected from the group consisting of oxides of Fe, Ni and Cu. In this case, it is preferable that a total content of oxides of Fe, Ni, Cu, Mn, V and Cr is 0.04 to 1.0 mol %, the total content being calculated by assuming that the oxides of Fe, Ni, Cu, Mn, V and Cr are FeO, NiO, CuO, Mn2O3, V2O5 and Cr2O3, respectively.


[0041] When the content of oxides of Mo and/or W is 0 mol % in terms of MoO3 and WO3 as in the samples 29, 116 and 123, the desired operating life can not be obtained; whereas when the content of oxides of Mo and/or W is 0.02 mol % in terms of MoO3 and WO3 as in samples 30, 117 and 124, the desired electrical characteristics can be successfully obtained.


[0042] Moreover, when the content of oxides of Mo and/or W is 0.35 mol % in terms of MoO3 and WO3 as in the samples 34, 122 and 137, the tanδ thereof may be deteriorated over 10.0% and the capacitance variation ΔC/C20 exceeds the range from −80% to +30% with the temperature varying from −25° C. to +85° C. However, when the total content of oxides is set to be 0.3 mol % as in samples 33, 121 and 136, the desired electrical characteristics can be successfully obtained.


[0043] Accordingly, it is preferable that the total content of the oxides of Mo and W ranges from 0.02 to 0.3 mol % in terms of MoO3 and WO3.


[0044] Furthermore, same effects can be obtained regardless of whether the oxides of Mo and W are used separately as in the samples 30 to 33 and 117 to 121 or used together as in the samples 124 to 130 and 132 to 136.


[0045] The optimum range of the glass component varies depending on the constituents thereof.


[0046] First, in case the glass component is substantially formed of SiO2 only, the optimum content of the glass component is as follows:


[0047] When the content of SiO2 is 0.00 mol % as in the sample 111, a highly densified ceramic body may not be obtained by the sintering process at 1200° C.; whereas when the content of SiO2 is set to be 0.2 mol % as in sample 112, the desired electrical characteristics can be successfully obtained.


[0048] Further, when the content of SiO2 is 5.0 mol % as in the sample 115, the dielectric constant of the capacitors becomes equal to or less than 10,000 and accordingly the desired accelerated life may not be obtained; whereas when the content of SiO2 is set to be 4.0 mol % as in sample 114, the desired electrical characteristics can be obtained.


[0049] Accordingly, the content of the glass component mainly formed of SiO2 preferably ranges from 0.2 mol % and 4.0 mol %.


[0050] In case the glass component including SiO2 is composed of Li2O—BaO—TiO2—SiO2, the optimum range of the content of Li2O—BaO—TiO2—SiO2 preferably is determined as follows:


[0051] When the total content of glass component Li2O—BaO—TiO2—SiO2 is 0 mol % as in the sample 62, tanδ of the produced capacitor may be deteriorated over 10.0% or the desired accelerated life may not be obtained; whereas when the content of the glass component Li2O—BaO—TiO2—SiO2 is 0.05 mol % as in sample 63, the desired electrical characteristics can be successfully attained.


[0052] Further, when the content of the glass component Li2O—BaO—TiO2—SiO2 is 2.0 mol % as in the sample 66, the relative permittivity of the produced multilayer ceramic capacitor may fall below 10,000 or the desired accelerated life may not be attained; whereas when the content of the glass component Li2O—BaO—TiO2—SiO2 is 1.0 mol % as in sample 65, the desired electrical characteristics can be obtained.


[0053] Accordingly, the total content of the glass component Li2O—BaO—TiO2—SiO2 is preferably between 0.05 and 1.0 wt % inclusive.


[0054] In case the glass component including SiO2 is composed of B2O3—SiO2—MO (MO used herein represents one or more oxides selected from the group of BaO, SrO, CaO, MgO and ZnO), the preferable composition of B2O3—SiO2—MO for obtaining desired electrical characteristics is within the range surrounded by 6 lines formed by cyclically connecting 6 points A, B, C, D, E and F in that order shown in a triangular composition diagram of FIG. 2, wherein the triangular composition diagram exhibits a composition of B2O3—SiO2—MO in terms of their mol %. The first point A represents a composition containing 1 mol % of B2O3, 80 mol % of SiO2 and 19 mol % of MO, a second point B represents a composition including 1 mol % of B2O3, 39 mol % of SiO2 and 60 mol % of MO. The third point C represents a composition containing 29 mol % of B2O3, 1 mol % of SiO2 and 70 mol % of MO. The fourth point D represents a composition containing 90 mol % of B2O3, 1 mol % of SiO2 and 9 mol % of MO. The fifth point E represents a composition containing 90 mol % of B2O3, 9 mol % of SiO2 and 1 mol % of MO and the sixth point F represents a composition containing 19 mol % of B2O3, 80 mol % of SiO2 and 1 mol % of MO. If a B2O3—SiO2—Mo composition is within the range defined with 6 points described above as in samples 73, 74, 76 to 78, 80, 81 and 83, the desired electrical characteristics can be obtained. However, if the composition is out of the range as in the samples 72, 75, 79 and 82, a highly densified ceramic body may not be attained at 1200° C.


[0055] Further, when the content of B2O3—SiO2—MO is 0 wt % as in the sample 67, a highly densified ceramic body may not be obtained when sintered at 1200° C.; whereas when the content of B2O3—SiO2—Mo is 0.05 wt % as in sample 68, the desired electrical characteristics can be successfully attained.


[0056] Still further, when the content of B2O3—SiO2—Mo is 10.00 wt % as in the sample 71, the relative permittivity may become less than 10,000 or the desired accelerated life may not be obtained; whereas when the content of B2O3—SiO2—Mo is set to be 5.00 wt % as in sample 70, the desired electrical characteristics can be obtained.


[0057] Accordingly, the content of B2O3—SiO2—Mo preferably ranges from 0.05 to 5.0 wt %.


[0058] When the glass component including SiO2 is composed of Li2O—SiO2—MO (Mo used herein represents one or more oxides selected from the group consisting of BaO, SrO, CaO, MgO and ZnO), the preferable compositional range for Li2O—SiO2—MO is within the range surrounded by 6 lines formed by cyclically connecting 6 points G, H, I, J, K and L in that order as shown in a triangular composition diagram of FIG. 3, wherein the triangular diagram shows a compositional of Li2O—SiO2—MO in a unit of mol %. The seventh point G represents a composition containing 1 mol % of Li2O, 94 mol % of SiO2 and 5 mol % of MO. The eighth point H represents a composition containing 1 mol % of Li2O, 19 mol % of SiO2 and 80 mol % of MO. The ninth point I represents a composition containing 19 mol % of Li2O, 1 mol % of SiO2 and 80 mol % of MO. The tenth point J represents a composition containing 89 mol % of Li2O, 1 mol % of SiO2 and 10 mol % of MO. The eleventh point K represents a composition containing 90 mol % of Li2O3, 9 mol % of SiO2 and 1 mol % of MO and the twelfth point L represents a composition containing 5 mol % of Li2O, 94 mol % of SiO2 and 1 mol % of MO. If a Li2O—SiO2—Mo composition falls within the range defined by the 6 G-L, as in samples 144, 145, 147 to 149, 151, 152 and 154, the desired electrical characteristics can be obtained. However, if otherwise as in the samples 143, 146, 150 and 153, a highly densified ceramic body with a highly improved density may not be attained after being sintered at 1200° C. or the relative permittivity may become less than 10,000.


[0059] Further, when the content of Li2O—SiO2—MO is 0 wt % as in the sample 138, a highly densified ceramic body may not be obtained by the sintering process at 1200° C.; whereas when the content of Li2O—SiO2—MO is set as 0.05 wt % as in sample 139, the desired electrical characteristics can be acquired.


[0060] Still further, when the content of Li2O—SiO2—MO is 10.00 wt % as in the sample 142, a highly densified ceramic body may not be gained by the sintering at 1200° C.; whereas when the content of Li2O—SiO2—MO is set to be 5.00 wt % as in sample 141, the desired electrical characteristics can be successfully obtained.


[0061] Accordingly, the content of Li2O—SiO2—MO optimally ranges from 0.05 to 5.0 wt %.


[0062] When x in the oxide of Ba(Ti1−xZrx)O3 is 0.00 as in the sample 155, the desired accelerated life may not be attained; whereas when x in the oxide of Ba(Ti1−xZrx)O3 is 0.05 as in sample 156, the desired electrical characteristics can be successfully obtained.


[0063] Further, When x in the oxide of Ba(Ti1−xZrx)O3 is 0.3 as in the sample 159, the relative permittivity may become less than 10,000; whereas when x in the oxide of Ba(Ti1−xZrx)O3 is 0.26 as in the sample 158, the desired electrical characteristics can be successfully obtained.


[0064] Accordingly, it is preferable that the value of x in the oxide of Ba(Ti1−xZrx)O3 is equal to or greater than 0.05 and equal to or less than 0.26.


[0065] The present invention can produce a multilayer ceramic capacitor capable of providing a desired accelerated life with a highly improved reliability, wherein the capacitor exhibits a relative permittivity εr of 10,000 or greater, tanδ of 10.0% or less and a capacitance variation ΔC/C20 ranging from −80% to +30% with the temperature variances from −25° C. to +85° C.


[0066] It should be noted that other types of raw materials can be employed as source materials for obtaining the ceramic slurry. For instance, barium acetate or barium nitrate can be used instead of BaCO3.


[0067] Although the present invention has been described with reference to the multilayer ceramic capacitors only, it should be apparent to those skilled in the art that the present invention can also be applied to single-layer ceramic capacitors.


[0068] While the invention has been shown and described with respect to the preferred embodiments, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the following claims.
1TABLE 1-1content of the glasscomposition of minor additives (mol %)component (wt %)Main component (mol %)rare-earthcontentsamplecomposition(Re2O3)transition metaltotal#1B2O3-SiO2-MO←molnumberBaTiZrBa/(TiZr)elementcontentMgOMn2O3V2O5Cr2O3contentMoO3Li2O-MB2O3SiO2MOratio  1&Asteriskpseud;10086141.003Ho1.00.20.020.020.10.1  2&Asteriskpseud;10086141.003Ho1.00.20.020.020.10.1  3&Asteriskpseud;10086141.003Ho1.00.20.020.020.10.1 410086141.003Ho1.00.20.030.030.10.1 510086141.003Ho1.00.20.030.030.10.1 610086141.003Ho1.00.20.030.030.10.1 710086141.003Ho1.00.20.010.020.030.10.1 810086141.003Ho1.00.20.050.020.070.10.1 910086141.003Ho1.00.20.050.10.150.10.11010086141.003Ho1.00.20.050.010.10.160.10.11110086141.003Ho1.00.20.10.050.10.250.10.11210086141.003Ho1.00.20.10.10.10.30.10.11310086141.003Ho1.00.20.30.30.10.11410086141.003Ho1.00.20.30.30.10.11510086141.003Ho1.00.20.30.30.10.11610086141.003Ho1.00.20.60.60.10.11710086141.003Ho1.00.20.60.60.10.11810086141.003Ho1.00.20.60.60.10.11910086141.003Ho1.00.20.30.30.60.10.12010086141.003Ho1.00.20.30.30.60.10.12110086141.003Ho1.00.20.30.30.60.10.12210086141.003Ho1.00.20.20.40.60.10.12310086141.003Ho1.00.20.10.50.60.10.12410086141.003Ho1.00.20.20.20.20.60.10.1 25&Asteriskpseud;10086141.003Ho1.00.20.70.70.10.1 26&Asteriskpseud;10086141.003Ho1.00.20.70.70.10.1 27&Asteriskpseud;10086141.003Ho1.00.20.70.70.10.12810086141.003Ho1.00.20.20.10.40.70.10.1 29&Asteriskpseud;10086141.003Ho1.00.20.050.10.10.2500.1Sample numbers marked with &Asteriskpseud; are comparative examples. #1 Li2O-: Li2O-BaO-TiO2-SiO2


[0069]

2








TABLE 1-2














content of the glass



composition of minor additives (mol %)
component (wt %)












Main component (mol %)
rare-earth

content

















sample
composition

(Re2O3)

transition metal
total

#1
B2O3-SiO2-MO
←mol

























number
Ba
Ti
Zr
Ba/(TiZr)
element
content
MgO
Mn2O3
V2O5
Cr2O3
content
MoO3
Li2O-
M
B2O3
SiO2
MO
ratio




























30
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
0.1
0.25
0.025
0.1







31
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
0.1
0.25
0.05
0.1







32
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
0.1
0.25
0.1
0.1







33
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
0.1
0.25
0.3
0.1







 34&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
0.1
0.25
0.35
0.1







35
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05

0.2
0.1
0.1







 36&Asteriskpseud;
100.3
86
14
1.003
Ho
0
0.2
0.15
0.05

0.2
0.1
0.1







37
100.3
86
14
1.003
Ho
0.25
0.2
0.15
0.05

0.2
0.1
0.1







38
100.3
86
14
1.003
Ho
0.5
0.2
0.15
0.05

0.2
0.1
0.1







39
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05

0.2
0.1
0.1







40
100.3
86
14
1.003
Ho
1.5
0.2
0.15
0.05

0.2
0.1
0.1







 41&Asteriskpseud;
100.3
86
14
1.003
Ho
2.0
0.2
0.15
0.05

0.2
0.1
0.1







 42&Asteriskpseud;
100.3
86
14
1.003
Ho
4.0
0.2
0.15
0.05

0.2
0.1
0.1







43
100.3
86
14
1.003
Sm
0.25
0.2
0.15
0.05

0.2
0.1
0.1







44
100.3
86
14
1.003
Sm
0.75
0.2
0.15
0.05

0.2
0.1
0.1







45
100.3
86
14
1.003
Eu
0.75
0.2
0.15
0.05

0.2
0.1
0.1







46
100.3
86
14
1.003
Gd
0.75
0.2
0.15
0.05

0.2
0.1
0.1







47
100.3
86
14
1.003
Tb
0.75
0.2
0.15
0.05

0.2
0.1
0.1







48
100.3
86
14
1.003
Dy
0.75
0.2
0.15
0.05

0.2
0.1
0.1







49
100.3
86
14
1.003
Er
0.75
0.2
0.15
0.05

0.2
0.1
0.1







50
100.3
86
14
1.003
Tm
0.75
0.2
0.15
0.05

0.2
0.1
0.1







51
100.3
86
14
1.003
Yb
0.75
0.2
0.15
0.05

0.2
0.1
0.1







52
100.3
86
14
1.003
Yb
1.0
0.2
0.15
0.05

0.2
0.1
0.1







53
100.3
86
14
1.003
Y
1.0
0.2
0.15
0.05

0.2
0.1
0.1







54
100.3
86
14
1.003
Ho/Dy
0.5/0.5
0.2
0.15
0.05

0.2
0.1
0.1







55
100.3
86
14
1.003
Ho/Dy/Yb
5/0.5/0.
0.2
0.15
0.05

0.2
0.1
0.1







56
100.3
86
14
1.003
Sm/Ho/Yb
2/0.5/0.
0.2
0.15
0.05

0.2
0.1
0.1







57
100.3
86
14
1.003
Sm/Yb
0.5/1.0
0.2
0.15
0.05

0.2
0.1
0.1







 58&Asteriskpseud;
100.3
86
14
1.003
Ho
1
0
0.15
0.05

0.2
0.1
0.1











Sample numbers marked with &Asteriskpseud; are comparative examples.




#1 Li2O-: Li2O-BaO-TiO2-SiO2








[0070]

3








TABLE 1-3














content of the glass



composition of minor additives (mol %)
component (wt %)












Main component (mol %)
rare-earth

content

















sample
composition

(Re2O3)

transition metal
total

#1
B2O3-SiO2-MO
←mol

























number
Ba
Ti
Zr
Ba/(TiZr)
element
content
MgO
Mn2O3
V2O5
Cr2O3
content
MoO3
Li2O-
M
B2O3
SiO2
MO
ratio




























59
100.3
86
14
1.003
Ho
1
0.1
0.15
0.05

0.2
0.1
0.1







60
100.3
86
14
1.003
Ho
1
0.4
0.15
0.05

0.2
0.1
0.1







 61&Asteriskpseud;
100.3
86
14
1.003
Ho
1
0.6
0.15
0.05

0.2
0.1
0.1







 62&Asteriskpseud;
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05

0.2
0.1
0







63
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05

0.2
0.1
0.05







64
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05

0.2
0.1
0.5







65
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05

0.2
1.1
1







 66&Asteriskpseud;
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05

0.2
2.1
2







 67&Asteriskpseud;
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05

Ca
15
65
20
0.00


68
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05

Ca
15
65
20
0.05


69
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05

Ca
15
65
20
2.00


70
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05

Ca
15
65
20
5.00


 71&Asteriskpseud;
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05

Ca
15
65
20
10.00


 72&Asteriskpseud;
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05

Ca
95
4
1
1.00


73
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05

Ca
90
9
1
1.00


74
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05

Ca
90
1
9
1.00


 75&Asteriskpseud;
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05

Ca
50
50
0
1.00


76
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05

Ca
20
70
10
1.00


77
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05

Ca
19
80
1
1.00


78
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05

Ca
1
80
19
1.00


 79&Asteriskpseud;
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05

Ca
4
95
1
1.00


80
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05

Ca
1
39
60
1.00


81
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05

Ca
29
1
70
1.00


 82&Asteriskpseud;
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05

Ca
4
5
95
1.00


83
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05

Ca
20
30
50
1.00






Sample numbers marked with &Asteriskpseud; are comparative examples.




#1 Li2O-: Li2O-BaO-TiO2-SiO2








[0071]

4








TABLE 1-4














content of the glass



composition of minor additives (mol %)
component (wt %)












Main component (mol %)
rare-earth

content

















sample
composition

(Re2O3)

transition metal
total

#1
B2O3-SiO2-MO
←mol

























number
Ba
Ti
Zr
Ba/(TiZr)
element
content
MgO
Mn2O3
V2O5
Cr2O3
content
MoO3
Li2O-
M
B2O3
SiO2
MO
ratio




























  84&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
 0.02


0.02
0.05
0.05
0.1
Ba
15
20
1.00


  85&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2

 0.02

0.02
0.05
0.05
0.1
Ba
15
20
1.00


  86&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2


 0.02
0.02
0.05
0.05
0.1
Ba
15
20
1.00


 87
100.3
86
14
1.003
Ho
1.0
0.2
 0.03


0.03
0.05
0.05
0.1
Ca
15
20
1.00


 88
100.3
86
14
1.003
Ho
1.0
0.2

 0.03

0.03
0.05
0.05
0.1
Ca
15
20
1.00


 89
100.3
86
14
1.003
Ho
1.0
0.2


 0.03
0.03
0.05
0.05
0.1
Ca
15
20
1.00


 90
100.3
86
14
1.003
Ho
1.0
0.2
 0.01
 0.02

0.03
0.05
0.05
0.1
Sr
15
20
1.00


 91
100.3
86
14
1.003
Ho
1.0
0.2
 0.05
 0.02

0.07
0.05
0.05
0.1
Sr
15
20
1.00


 92
100.3
86
14
1.003
Ho
1.0
0.2
 0.05

0.1
0.15
0.05
0.05
0.1
Sr
15
20
1.00


 93
100.3
86
14
1.003
Ho
1.0
0.2
 0.05
 0.01
0.1
0.16
0.05
0.05
0.1
Sr
15
20
1.00


 94
100.3
86
14
1.003
Ho
1.0
0.2
0.1
 0.05
0.1
0.25
0.05
0.05
0.1
Mg
15
20
1.00


 95
100.3
86
14
1.003
Ho
1.0
0.2
0.1
0.1
0.1
0.3
0.05
0.05
0.1
Mg
15
20
1.00


 96
100.3
86
14
1.003
Ho
1.0
0.2
0.3


0.3
0.05
0.05
0.1
Mg
15
20
1.00


 97
100.3
86
14
1.003
Ho
1.0
0.2

0.3

0.3
0.05
0.05
0.1
Mg
15
20
1.00


 98
100.3
86
14
1.003
Ho
1.0
0.2


0.3
0.3
0.05
0.05
0.1
Mg
15
20
1.00


 99
100.3
86
14
1.003
Ho
1.0
0.2
0.6


0.6
0.05
0.05
0.1
Zn
15
20
1.00


100
100.3
86
14
1.003
Ho
1.0
0.2

0.6

0.6
0.05
0.05
0.1
Zn
15
20
1.00


101
100.3
86
14
1.003
Ho
1.0
0.2


0.6
0.6
0.05
0.05
0.1
Zn
15
20
1.00


102
100.3
86
14
1.003
Ho
1.0
0.2
0.3
0.3

0.6
0.05
0.05
0.1
Ba
15
20
1.00


103
100.3
86
14
1.003
Ho
1.0
0.2
0.3

0.3
0.6
0.05
0.05
0.1
Ba
15
20
1.00


104
100.3
86
14
1.003
Ho
1.0
0.2

0.3
0.3
0.6
0.05
0.05
0.1
Ba
15
20
1.00


105
100.3
86
14
1.003
Ho
1.0
0.2
0.2

0.4
0.6
0.05
0.05
0.1
Ba
15
20
1.00


106
100.3
86
14
1.003
Ho
1.0
0.2
0.1

0.5
0.6
0.05
0.05
0.1
Ba
15
20
1.00


107
100.3
86
14
1.003
Ho
1.0
0.2
0.2
0.2
0.2
0.6
0.05
0.05
0.1
Ba
15
20
1.00


 108&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.7


0.7
0.05
0.05
0.1
Ba/Ca
15
20
1.00


 109&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2

0.7

0.7
0.05
0.05
0.1
Ba/Ca
15
20
1.00


 110&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2


0.7
0.7
0.05
0.05
0.1
Ba/Ca
15
20
1.00






Sample numbers marked with &Asteriskpseud; are comparative examples.




#1 Li2O-: Li2O-BaO-TiO2-SiO2








[0072]

5








TABLE 1-5













composition of minor additives (mol %)












main component (mol %)
rare-earth

















sample
composition

(Re2O3)

transition metal
total

total
(wt %)






















number
Ba
Ti
Zr
Ba/(TiZr)
element
content
MgO
Mn2O3
V2O5
Cr2O3
content
MoO3
WO3
content
SiO2

























 111&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05

0.2
0.05
0.05
0.1
0


112
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05

0.2
0.05
0.05
0.1
  0.2


113
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05

0.2
0.05
0.05
0.1
1


114
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05

0.2
0.05
0.05
0.1
4


 115&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05

0.2
0.05
0.05
0.1
5


 116&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1

0.15

0
0



117
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1

0.15

0.025
0.025



118
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1

0.15

0.05
0.05



119
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1

0.15

0.1
0.1



120
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1

0.15

0.2
0.2



121
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1

0.15

0.3
0.3



 122&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1

0.15

0.35
0.35



 123&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1

0.15
0
0
0



124
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1

0.15
0.01
0.01
0.02



125
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1

0.15
0.02
0.02
0.04



126
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1

0.15
0
0.05
0.05



127
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1

0.15
0.025
0.05
0.075



128
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1

0.15
0.05
0.05
0.1



129
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1

0.15
0.1
0.05
0.15



130
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1

0.15
0.2
0.05
0.25



 131&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1

0.15
0.3
0.05
0.35



132
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1

0.15
0.05
0
0.05



133
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1

0.15
0.05
0.025
0.075



134
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1

0.15
0.05
0.05
0.1



135
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1

0.15
0.05
0.1
0.15



136
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1

0.15
0.05
0.2
0.25



 137&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1

0.15
0.05
0.3
0.35







Sample numbers marked with &Asteriskpseud; are comparative examples.








[0073]

6









TABLE 1-6















content of the glass component



main component
composition of minor additives (mol %)
(wt %)














(mol %)
rare-earth

content

content

















sample
composition
Ba/
(Re2O3)

transition metal
total

←mol
B2O3-SiO2-MO
←mol


























number
Ba
Ti
Zr
(TiZr)
element
content
MgO
Mn2O3
V2O5
Cr2O3
content
MoO3
WO3
ratio
M
B2O3
SiO2
MO
ratio





























 138&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05

0.2
0.05
0.05
0.1
Ca
15
65
20
0.00


139
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05

0.2
0.05
0.05
0.1
Ca
15
65
20
0.05


140
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05

0.2
0.05
0.05
0.1
Ca
15
65
20
2.00


141
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05

0.2
0.05
0.05
0.1
Ca
15
65
20
5.00


 142&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05

0.2
0.05
0.05
0.1
Ca
15
65
20
10.00


 143&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05

0.2
0.05
0.05
0.1
Ca
95
4
1
1.00


144
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05

0.2
0.05
0.05
0.1
Ca
90
9
1
1.00


145
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05

0.2
0.05
0.05
0.1
Ca
89
1
10
1.00


 146&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05

0.2
0.05
0.05
0.1
Ca
50
50
0
1.00


147
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05

0.2
0.05
0.05
0.1
Ca
20
70
10
1.00


148
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05

0.2
0.05
0.05
0.1
Ca
5
94
1
1.00


149
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05

0.2
0.05
0.05
0.1
Ca
1
94
5
1.00


 150&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05

0.2
0.05
0.05
0.1
Ca
4
95
1
1.00


151
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05

0.2
0.05
0.05
0.1
Ca
1
79
20
1.00


152
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05

0.2
0.05
0.05
0.1
Ca
19
1
80
1.00


 153&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05

0.2
0.05
0.05
0.1
Ca
4
5
95
1.00


154
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05

0.2
0.05
0.05
0.1
Ca
20
30
50
1.00


 155&Asteriskpseud;
100.5
100
0
1.005
Ho
1.0
0.2
0.15
0.05

0.2
0.05
0.05
0.1
Ca
20
30
50
1.00


156
100.5
95
5
1.005
Ho
1.0
0.2
0.15
0.05

0.2
0.05
0.05
0.1
Ca
20
30
50
1.00


157
100.5
80
20
1.005
Ho
1.0
0.2
0.15
0.05

0.2
0.05
0.05
0.1
Ca
20
30
50
1.00


158
100.5
74
26
1.005
Ho
1.0
0.2
0.15
0.05

0.2
0.05
0.05
0.1
Ca
20
30
50
1.00


 159&Asteriskpseud;
100.5
70
30
1.005
Ho
1.0
0.2
0.15
0.05

0.2
0.05
0.05
0.1
Ca
20
30
50
1.00






Sample numbers marked with &Asteriskpseud; are comparative examples.








[0074]

7











TABLE 2-1















capacitance



sample
sintering

tanδ
resistivity(Ω · cm) at room
variation(ΔC/ΔC20, %)
accelerated














number
temperature (° C.)
permittivity
(%)
temperature
−25° C.
+85° C.
life(sec)

















  1&Asteriskpseud;
1200
13099
7.32
8.85E + 12
−42.2
−68.3
127865


  2&Asteriskpseud;
1200
15463
8.50
2.28E + 12
−40.8
−70.2
67865


  3&Asteriskpseud;
1200
11498
7.64
4.37E + 12
−41.0
−72.6
157654


 4
1200
11233
6.68
1.12E + 13
−43.7
−73.4
467600


 5
1200
14455
7.03
9.68E + 12
−43.7
−71.6
497600


 6
1200
13023
5.72
6.50E + 12
−43.2
−68.4
402800


 7
1200
15703
5.92
6.01E + 12
−40.1
−72.7
444200


 8
1200
13693
7.03
7.39E + 12
−43.3
−76.3
417800


 9
1200
11833
6.79
3.37E + 12
−41.5
−76.9
341900


10
1200
12856
6.12
1.18E + 13
−42.4
−68.4
282500


11
1200
14985
5.68
5.32E + 12
−41.4
−74.6
359900


12
1200
13913
5.62
1.02E + 13
−43.1
−73.2
468200


13
1200
14123
8.28
9.13E + 12
−41.6
−69.5
437000


14
1200
15088
6.91
1.03E + 13
−41.5
−69.2
498800


15
1200
12531
5.11
8.93E + 12
−43.8
−73.5
448700


16
1200
14346
7.23
2.46E + 12
−41.5
−69.2
363500


17
1200
12689
5.57
4.71E + 12
−40.3
−69.6
374000


18
1200
15769
7.50
1.09E + 13
−41.0
−73.5
239600


19
1200
15674
6.02
2.86E + 12
−42.9
−67.3
358700


20
1200
12688
8.98
8.06E + 12
−42.4
−77.0
241100


21
1200
12655
8.51
3.18E + 12
−40.3
−68.7
426500


22
1200
15763
8.96
8.99E + 12
−41.3
−77.0
342500


23
1200
14045
7.83
8.92E + 12
−41.7
−76.7
245600


24
1200
11229
5.19
6.13E + 12
−43.2
−71.7
482900


 25&Asteriskpseud;
1200
8654
5.54
5.94E + 12
−40.6
−71.7
464000


 26&Asteriskpseud;
1200
6543
6.05
1.17E + 13
−42.1
−67.4
455600


 27&Asteriskpseud;
1200
7698
6.17
6.36E + 12
−40.6
−74.9
86432


28
1200
12612
5.52
9.11E + 12
−43.0
−74.9
303200


 29&Asteriskpseud;
1200
13498
6.48
5.75E + 12
−41.5
−67.3
134242






Sample numbers marked with &Asteriskpseud; are comparative examples.








[0075]

8











TABLE 2-2















capacitance



sample
sintering

tanδ
resistivity(Ω · cm) at room
variation(ΔC/ΔC20, %)
accelerated














number
temperature (° C.)
permittivity
(%)
temperature
−25° C.
+85° C.
life(sec)

















31
1200
13422
6.06
3.56E + 12
−42.2
−72.0
351200


32
1200
12846
7.28
6.21E + 12
−40.6
−68.2
362600


33
1200
15962
8.28
2,13E + 12
−42.9
−72.2
472700


 34&Asteriskpseud;
1200
11320
12.30
3.81E + 12
−40.9
−67.1
237500


35
1200
11439
6.04
1.19E + 13
−43.5
−67.9
358100


 36&Asteriskpseud;
1200
14038
11.90
8.58E + 12
−43.1
−84.2
494600


37
1200
15633
5.45
5.78E + 12
−42.0
−72.3
364400


38
1200
13383
5.84
1.11E + 13
−41.7
−70.7
228500


39
1200
13750
5.01
9.38E + 12
−44.0
−78.5
294200


40
1200
12731
6.14
1.15E + 13
−42.8
−68.8
298700









 41&Asteriskpseud;
1200
incapable of obtaining a sintered ceramic with high density


 42&Asteriskpseud;
1200
incapable of obtaining a sintered ceramic with high density














43
1200
15648
8.33
1.13E + 13
−41.6
−73.3
484700


44
1200
12850
8.91
4.13E + 12
−42.4
−72.7
356900


45
1200
14909
8.16
7,33E + 12
−41.8
−76.9
429500


46
1200
13518
6.04
4.59E + 12
−40.4
−77.4
390200


47
1200
15901
7.74
9.84E + 12
−40.7
−67.3
391700


48
1200
11935
6.32
8.41E + 12
−43.1
−74.0
450800


49
1200
12972
8.73
1.08E + 13
−43.1
−67.6
433100


50
1200
12213
5.08
5.45E + 12
−43.6
−76.5
438200


51
1200
14480
7.04
6.96E + 12
−41.3
−70.0
271400


52
1200
12133
5.32
3.31E + 12
−41.6
−78.9
353600


53
1200
11208
8.76
9.45E + 12
−43.4
−69.1
453500


54
1200
11949
7.42
1.14E + 13
−41.2
−77.5
314000


55
1200
14032
5.53
8.56E + 12
−40.7
−76.9
374000


56
1200
15576
5.28
4.31E + 12
−40.9
−78.2
378800


57
1200
14391
8.19
9.71E + 12
−42.2
−73.0
214400


 58&Asteriskpseud;
1200
23129
16.80
2.38E + 12
−87.9
−67.5
454700






Sample numbers marked with &Asteriskpseud; are comparative examples.








[0076]

9











TABLE 2-3















capacitance



sample
sintering

tanδ
resistivity(Ω · cm) at room
variation(ΔC/ΔC20, %)
accelerated














number
temperature (° C.)
permittivity
(%)
temperature
−25° C.
+85° C.
life(sec)

















59
1200
14382
8.58
7.18E + 12
−41.4
−71.6
473900


60
1200
15968
8.96
6.33E + 12
−40.8
−75.2
334100


 61&Asteriskpseud;
1200
8769
3.80
2.27E + 12
−42.7
−83.9
109886


 62&Asteriskpseud;
1200
12588
13.10
3.73E + 12
−41.1
−74.0
76432


63
1200
13752
5.19
4.84E + 12
−43.1
−68.2
275000


64
1200
15777
8.25
9.00E + 12
−41.2
−69.3
430400


65
1200
12670
6.18
5.67E + 12
−42.9
−70.2
335000


 66&Asteriskpseud;
1200
8438
5.81
9.13E + 12
−42.5
−78.8
5326









 67&Asteriskpseud;
1200
incapable of obtaining a sintered ceramic with high density














68
1200
12238
8.24
9.18E + 12
−40.2
−70.4
218600


69
1200
11588
7.84
8.62E + 12
−43.0
−69.3
220100


70
1200
15311
6.23
6.42E + 12
−40.1
−70.7
209000


 71&Asteriskpseud;
1200
5988
4.10
6.84E + 12
−40.6
−76.4
7621









 72&Asteriskpseud;
1200
incapable of obtaining a sintered ceramic with high density














73
1200
15494
7.95
4.80E + 12
−42.6
−75.9
478400


74
1200
11922
7.28
6.91E + 12
−41.4
−67.8
339800









 75&Asteriskpseud;
1200
incapable of obtaining a sintered ceramic with high density














76
1200
15650
5.88
3.79E + 12
−42.5
−75.5
446600


77
1200
12793
8.01
1.04E + 13
−41.7
−73.5
458600


78
1200
13733
5.53
5.32E + 12
−42.2
−70.5
341000









 79&Asteriskpseud;
1200
incapable of obtaining a sintered ceramic with high density














80
1200
12016
5.22
2.37E + 12
−42.1
−68.3
443000


81
1200
14720
5.58
8.02E + 12
−41.9
−68.7
223100









 82&Asteriskpseud;
1200
incapable of obtaining a sintered ceramic with high density














83
1200
12815
8.75
5.99E + 12
−40.6
−77.5
435800






Sample numbers marked with &Asteriskpseud; are comparative examples.








[0077]

10











TABLE 2-4















capacitance



sample
sintering

tanδ
resistivity(Ω · cm) at room
variation(ΔC/ΔC20, %)
accelerated














number
temperature (° C.)
permittivity
(%)
temperature
−25° C.
+85° C.
life(sec)

















  84&Asteriskpseud;
1200
15453
8.20
9.87E + 12
−40.3
−78.5
7534


  85&Asteriskpseud;
1200
11309
7.97
7.07E + 12
−42.3
−74.6
24546


  86&Asteriskpseud;
1200
13496
7.36
2.21E + 12
−41.4
−77.7
6435


 87
1200
15088
7.02
4.57E + 12
−40.6
−71.4
461900


 88
1200
14189
7.26
9.36E + 12
−42.3
−72.4
261800


 89
1200
15832
7.01
1.18E + 13
−41.4
−79.0
451700


 90
1200
14417
6.16
7.57E + 12
−42.8
−67.7
239900


 91
1200
14733
5.92
1.OOE + 13
−40.6
−73.0
469400


 92
1200
14194
7.84
2.06E + 12
−43.7
−71.0
374000


 93
1200
14177
6.43
4.81E + 12
−43.5
−67.1
412400


 94
1200
15779
5.68
4.99E + 12
−40.3
−71.6
366500


 95
1200
14209
8.93
1.18E + 13
−43.6
−73.5
376700


 96
1200
14727
8.85
1.18E + 13
−41.4
−67.7
366800


 97
1200
12523
7.34
8.38E + 12
−40.3
−72.4
247000


 98
1200
11089
8.54
7.97E + 12
−40.2
−71.9
348500


 99
1200
13442
7.80
2.54E + 12
−43.5
−68.5
256700


100
1200
15667
6.21
7.94E + 12
−42.2
−77.4
486500


101
1200
12847
8.47
3.12E + 12
−40.2
−68.2
407000


102
1200
12266
8.72
3.59E + 12
−43.5
−75.8
427400


103
1200
14965
8.79
8.53E + 12
−43.8
−69.0
362600


104
1200
12794
8.60
9.62E + 12
−41.1
−78.8
292100


105
1200
13163
7.96
1.13E + 13
−43.4
−72.9
315200


106
1200
12545
6.63
6.17E + 12
−41.9
−75.7
417800


107
1200
11027
5.57
6.52E + 12
−42.9
−67.6
255200


 108&Asteriskpseud;
1200
7259
5.12
4.80E + 12
−40.1
−73.7
235700


 109&Asteriskpseud;
1200
6439
3.53
5.37E + 12
−41.5
−70.8
369500


 110&Asteriskpseud;
1200
2543
2.76
4.09E + 12
−41.5
−70.3
43455






Sample numbers marked with &Asteriskpseud; are comparative examples.








[0078]

11











TABLE 2-5















capacitance



sample
sintering

tanδ
resistivity(Ω · cm) at room
variation(ΔC/ΔC20, %)
accelerated














number
temperature(° C.)
permittivity
(%)
temperature
−25° C.
+85° C.
life(sec)












 111&Asteriskpseud;
1200
incapable of obtaining a sintered ceramic with high density














112
1200
11542
5.28
7.42E + 12
−43.5
−76.0
342500


113
1200
12319
5.78
1.15E + 13
−40.5
−71.2
455900


114
1200
15522
8.16
8.41E + 12
−40.1
−76.5
382100


 115&Asteriskpseud;
1200
8134
2.88
5.08E + 12
−42.6
−72.9
25442


 116&Asteriskpseud;
1200
18751
6.19
5.44E + 12
−40.6
−89.4
43676


117
1200
14498
7.00
1.01E + 13
−43.8
−67.3
291200


118
1200
15720
7.15
1.15E + 13
−41.0
−70.1
409700


119
1200
11067
6.45
5.03E + 12
−43.7
−70.9
377300


120
1200
14148
5.95
1.10E + 13
−40.5
−72.2
353900


121
1200
14509
6.22
2.45E + 12
−41.0
−76.7
410900


 122&Asteriskpseud;
1200
20862
12.40
1.11E + 13
−86.3
−43.8
406100


 123&Asteriskpseud;
1200
13545
8.80
4.33E + 12
−42.1
−70.7
36532


124
1200
14716
5.59
5.64E + 12
−43.0
−68.7
337100


125
1200
11704
7.24
5.09E + 12
−43.1
−73.8
315200


126
1200
12301
8.39
1.01E + 13
−42.8
−68.9
363200


127
1200
15933
8.23
5.32E + 12
−41.7
−72.9
239900


128
1200
13212
8.17
5.92E + 12
−43.3
−71.0
492500


129
1200
13096
8.58
6.45E + 12
−40.8
−71.4
244700


130
1200
11101
8.51
4.01E + 12
−42.0
−77.5
266000


 131&Asteriskpseud;
1200
23786
15.80
2.27E + 12
−82.0
−41.9
223700


132
1200
11292
5.65
4.01E + 12
−43.6
−77.6
401600


133
1200
11672
8.67
1.10E + 13
−42.1
−68.2
361400


134
1200
12236
7.80
1.14E + 13
−42.6
−71.2
489500


135
1200
11682
8.57
1.11E + 13
−42.4
−77.9
411500


136
1200
11435
5.34
5.26E + 12
−43.0
−71.1
486800


 137&Asteriskpseud;
1200
28765
17.30
9.26E + 12
−43.1
−67.4
274100






Sample numbers marked with &Asteriskpseud; are comparative examples.








[0079]

12











TABLE 2-6















capacitance



sample
sintering

tanδ
resistivity(Ω · cm) at room
variation(ΔC/ΔC20, %)
accelerated














number
temperature(° C.)
permittivity
(%)
temperature
−25° C.
+85° C.
life(sec)












 138&Asteriskpseud;
1200
incapable of obtaining a sintered ceramic with high density














139
1200
14744
8.85
6.46E + 12
−42.3
−76.7
394400


140
1200
12027
8.98
6.66E + 12
−42.4
−69.7
276500


141
1200
13352
6.43
1.19E + 13
−40.4
−68.5
467900









 142&Asteriskpseud;
1200
incapable of obtaining a sintered ceramic with high density














 143&Asteriskpseud;
1200
7612
2.98
8.92E + 12
−42.5
−74.4
2362


144
1200
11359
8.96
5.98E + 12
−41.8
−68.7
458000


145
1200
11423
8.81
6.07E + 12
−43.9
−70.3
331400









 146&Asteriskpseud;
1200
incapable of obtaining a sintered ceramic with high density














147
1200
12283
7.34
2.04E + 12
−41.2
−78.6
209600


148
1200
13395
8.17
7.14E + 12
−40.9
−68.3
264500


149
1200
13730
5.70
6.00E + 12
−43.0
−76.4
372500









 150&Asteriskpseud;
1200
incapable of obtaining a sintered ceramic with high density














151
1200
15706
5.27
3.93E + 12
−41.2
−72.4
283400


152
1200
13012
8.55
8.39E + 12
−43.0
−71.3
360200









 153&Asteriskpseud;
1200
incapable of obtaining a sintered ceramic with high density














154
1200
14940
7.43
6.34E + 12
−40.5
−67.4
380300


 155&Asteriskpseud;
1200
16485
5.68
8.84E + 12
−43.3
−68.6
12083


156
1200
14274
7.39
5.67E + 12
−40.5
−78.0
250700


157
1200
12831
6.37
5.09E + 12
−43.9
−74.0
431300


158
1200
12802
7.68
9.38E + 12
−41.7
−70.1
362300


 159&Asteriskpseud;
1200
7524
8.39
7.21E + 12
−40.3
−72.7
344000






Sample numbers marked with &Asteriskpseud; are comparative examples.








Claims
  • 1. A dielectric ceramic composition comprising: 100 mol % of an oxide of Ba, Ti and Zr, the content of the oxide of the Ba, Ti and Zr being calculated by assuming that the oxide thereof is Ba(Ti1−xZrx)O3; 0.25 to 1.5 mol % of an oxide of Re, Re representing one or more elements selected from the group consisting of Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Y, the content of the oxide of the Re being calculated by assuming that the oxide thereof is Re2O3; 0.1 to 0.4 mol % of an oxide of Mg, the content of the oxide of the Mg being calculated by assuming that the oxide thereof is MgO; 0.03 to 0.6 mol % of oxides of one or more elements selected from the group consisting of Mn, V and Cr, the contents of the oxides of the Mn, V and Cr being calculated by assuming that the oxides thereof are Mn2O3, V2O5 and Cr2O3, respectively; 0.02 to 0.3 mol % of oxides of one or two elements of Mo and W, the contents of the oxides of Mo and W being calculated by assuming that the oxides thereof Mo3O3, WO3, respectively; and a glass component including SiO2, wherein x in the oxide of Ba(Ti1−xZrx)O3 ranges from about 0.05 to about 0.26.
  • 2. The dielectric ceramic composition of claim 1, wherein the glass component is composed of Li2O—BaO—TiO2—SiO2 and the content thereof ranges from 0.05 to 1.0 wt %.
  • 3. The dielectric ceramic composition of claim 1, wherein the glass component is composed of B2O3—SiO2—MO, MO representing one or more oxides selected from the group consisting of BaO, SrO, CaO, MgO and ZnO, and wherein a composition of B2O3—SiO2—MO is within a range surrounded by 6 lines formed by cyclically connecting 6 points A, B, C, D, E and F in that order in a triangular composition diagram exhibiting compositional amounts of B2O3, SiO2 and Mo in a unit of mol %, and wherein a point A represents a composition including 1 mol % of B2O3, 80 mol % of SiO2 and 19 mol % of MO, a point B represents a composition including 1 mol % of B2O3, 39 mol % of SiO2 and 60 mol % of MO, a point C represents a composition including 29 mol % of B2O3, 1 mol % of SiO2 and 70 mol % of MO, a point D represents a composition including 90 mol % of B2O3, 1 mol % of SiO2 and 9 mol % of MO, a point E represents a composition including 90 mol % of B2O3, 9 mol % of SiO2 and 1 mol % of MO and a point F represents a composition including 19 mol % of B2O3, 80 mol % of SiO2 and 1 mol % of MO, a content of the composition B2O3—SiO2—MO ranging from 0.05 to 5.0 wt %.
  • 4. The dielectric ceramic composition of claim 1, wherein the glass component is substantially composed of SiO2 and a content thereof is 0.20 to 4.0 mol %.
  • 5. The dielectric ceramic composition of claim 1, wherein the glass component is composed of Li2O—SiO2—MO, MO representing one or more oxides selected from the group consisting of BaO, SrO, CaO, MgO and ZnO, and wherein the composition of Li2O—SiO2—MO is within a range surrounded by 6 lines formed by cyclically connecting 6 points G, H, I, J, K and L in that order in a triangular composition diagram showing compositional amounts of Li2O, SiO2 and MO in a unit of mol %, and wherein a point G represents a composition including 1 mol % of Li2O, 94 mol % of SiO2 and 5 mol % of MO, a point H represents a composition including 1 mol % of Li2O, 19 mol % of SiO2 and 80 mol % of MO, a point I represents a composition including 19 mol % of Li2O, 1 mol % of SiO2 and 80 mol % of MO, a point J represents a composition including 89 mol % of Li2O, 1 mol % of SiO2 and 10 mol % of MO, a point K represents a composition including 90 mol % of Li2O3, 9 mol % of SiO2 and 1 mol % of MO and a point L represents a composition including 5 mol % of Li2O, 94 mol % of SiO2 and 1 mol % of MO, a content of the composition Li2O—SiO2—MO ranging from 0.05 to 5.0 wt %.
  • 6. The dielectric ceramic composition of claim 1, further comprising one or more oxides selected from the group consisting of oxides of Fe, Ni and Cu and wherein a total content of oxides of Fe, Ni, Cu, Mn, V and Cr is 0.04 to 1.0 mol %, the total content being calculated by assuming that the oxides of Fe, Ni, Cu, Mn, V and Cr are FeO, NiO, CuO, Mn2O3, V2O5 and Cr2O3, respectively.
  • 7. A ceramic capacitor comprising one or more dielectric layers made of the dielectric ceramic composition of claim 1.
  • 8. The ceramic capacitor of claim 7, wherein the glass component is composed of Li2O—BaO—TiO2—SiO2 and the content thereof ranges from 0.05 to 1.0 wt %.
  • 9. The ceramic capacitor of claim 7, wherein the glass component is composed of B2O3—SiO2—MO, MO representing one or more oxides selected from the group consisting of BaO, SrO, CaO, MgO and ZnO, and wherein a composition of B2O3—SiO2—MO is within a range surrounded by 6 lines formed by cyclically connecting 6 points A, B, C, D, E and F in that order in a triangular composition diagram exhibiting compositional amounts of B2O3, SiO2 and Mo in a unit of mol %, and wherein a point A represents a composition including 1 mol % of B2O3, 80 mol % of SiO2 and 19 mol % of MO, a point B represents a composition including 1 mol % of B2O3, 39 mol % of SiO2 and 60 mol % of MO, a point C represents a composition including 29 mol % of B2O3, 1 mol % of SiO2 and 70 mol % of MO, a point D represents a composition including 90 mol % of B2O3, 1 mol % of SiO2 and 9 mol % of MO, a point E represents a composition including 90 mol % of B2O3, 9 mol % of SiO2 and 1 mol % of MO and a point F represents a composition including 19 mol % of B2O3, 80 mol % of SiO2 and 1 mol % of MO, a content of the composition B2O3—SiO2—MO ranging from 0.05 to 5.0 wt %.
  • 10. The ceramic capacitor of claim 7, wherein the glass component is substantially composed of SiO2 and a content thereof is 0.20 to 4.0 mol %.
  • 11. The ceramic capacitor of claim 7, wherein the glass component is composed of Li2O—SiO2—MO, MO representing one or more oxides selected from the group consisting of BaO, SrO, CaO, MgO and ZnO, and wherein the composition of Li2O—SiO2—MO is within a range surrounded by 6 lines formed by cyclically connecting 6 points G, H, I, J, K and L in that order in a triangular composition diagram showing compositional amounts of Li2O, SiO2 and MO in a unit of mol %, and wherein a point G represents a composition including 1 mol % of Li2O, 94 mol % of SiO2 and 5 mol % of MO, a point H represents a composition including 1 mol % of Li2O, 19 mol % of SiO2 and 80 mol % of MO, a point I represents a composition including 19 mol % of Li2O, 1 mol % of SiO2 and 80 mol % of MO, a point J represents a composition including 89 mol % of Li2O, 1 mol % of SiO2 and 10 mol % of MO, a point K represents a composition including 90 mol % of Li2O3, 9 mol % of SiO2 and 1 mol % of MO and a point L represents a composition including 5 mol % of Li2O, 94 mol % of SiO2 and 1 mol % of MO, a content of the composition Li2O—SiO2—MO ranging from 0.05 to 5.0 wt %.
  • 12. The ceramic capacitor of claim 7, wherein the dielectric ceramic composition further comprises one or more oxides selected from the group consisting of oxides of Fe, Ni and Cu and wherein a total content of oxides of Fe, Ni, Cu, Mn, V and Cr is 0.04 to 1.0 mol %, the total content being calculated by assuming that the oxides of Fe, Ni, Cu, Mn, V and Cr are FeO, NiO, CuO, Mn2O3, V2O5 and Cr2O3, respectively.
Priority Claims (1)
Number Date Country Kind
2001-105329 Apr 2001 JP