Information
-
Patent Grant
-
6620755
-
Patent Number
6,620,755
-
Date Filed
Wednesday, April 3, 200222 years ago
-
Date Issued
Tuesday, September 16, 200321 years ago
-
Inventors
-
Original Assignees
-
Examiners
Agents
-
CPC
- C04B35/49 - containing also titanium oxides or titanates
- B32B18/00 - Laminated products composed mainly of ceramics
- C04B35/6261 - Milling
- C04B35/62625 - Wet mixtures
- C04B35/63 - using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/634 - Polymers
- C04B35/64 - Burning or sintering processes
- H01G4/1245 - containing also titanates
- B32B2311/22 - Nickel or cobalt
- C04B2235/3203 - Lithium oxide or oxide-forming salts thereof
- C04B2235/3206 - Magnesium oxides or oxide-forming salts thereof
- C04B2235/3215 - Barium oxides or oxide-forming salts thereof
- C04B2235/3224 - Rare earth oxide or oxide forming salts thereof
- C04B2235/3225 - Yttrium oxide or oxide-forming salts thereof
- C04B2235/3232 - Titanium oxides or titanates
- C04B2235/3239 - Vanadium oxides, vanadates or oxide forming salts thereof
- C04B2235/3241 - Chromium oxides, chromates, or oxide-forming salts thereof
- C04B2235/3256 - Molybdenum oxides, molybdates or oxide forming salts thereof
- C04B2235/3258 - Tungsten oxides, tungstates, or oxide-forming salts thereof
- C04B2235/3265 - Mn2O3
- C04B2235/3275 - Cobalt oxides, cobaltates or cobaltites or oxide forming salts thereof
- C04B2235/3279 - Nickel oxides, nickalates, or oxide-forming salts thereof
- C04B2235/3281 - Copper oxides, cuprates or oxide-forming salts thereof
- C04B2235/3284 - Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
- C04B2235/3409 - Boron oxide, borates, boric acids, or oxide forming salts thereof
- C04B2235/3418 - Silicon oxide, silicic acids, or oxide forming salts thereof
- C04B2235/36 - Glass starting materials for making ceramics
- C04B2235/365 - Borosilicate glass
- C04B2235/405 - Iron group metals
- C04B2235/5445 - submicron sized
- C04B2235/6584 - at an oxygen percentage below that of air
- C04B2235/663 - Oxidative annealing
- C04B2235/79 - Non-stoichiometric products
- C04B2237/40 - Metallic
- C04B2237/405 - Iron metal group
- C04B2237/704 - of one or more of the ceramic layers or articles
-
US Classifications
Field of Search
US
- 501 138
- 501 139
- 361 3214
- 361 3215
-
International Classifications
-
Abstract
A dielectric ceramic composition includes 100 mol % of an oxide of Ba, Ti and Zr, 0.25 to 1.5 mol % of an oxide of Re, Re representing one or more elements selected from the group consisting of Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Y, 0.1 to 0.4 mol % of an oxide of Mg, 0.03 to 0.6 mol % of oxides of one or more elements selected from the group consisting of Mn, V and Cr and 0.02 to 0.3 mol % of oxides of one or two elements of Mo and W. The ceramic composition further includes a glass component having SiO2 and x in the oxide of Ba(Ti1−xZrx)O3 ranges from about 0.05 to about 0.26.
Description
FIELD OF THE INVENTION
The present invention relates to a ceramic capacitor and ceramic compositions therefor; and, more particularly, to reduction resistive dielectric ceramic compositions suitable for use as a dielectric layer of a ceramic capacitor having internal electrodes made of a base metal such as Ni and a ceramic capacitor fabricated by employing such ceramic compositions as a dielectric layer thereof.
BACKGROUND OF THE INVENTION
Recently, a base metal, e.g., Ni, is widely used in forming internal electrodes of multilayer ceramic capacitors for the purpose of reducing manufacturing costs. In case the internal electrodes are composed of the base metal, it is required that chip-shaped laminated bodies including therein the internal electrodes be sintered in a reductive atmosphere in order to prevent an oxidization of the internal electrodes. Accordingly, a variety of reduction resistive dielectric ceramic compositions have been developed.
Recent trend towards ever more miniaturized and dense electric circuits intensifies a demand for a further scaled down multilayer ceramic capacitor with higher capacitance. Keeping up with such demand, there has been made an effort to fabricate thinner dielectric layers and to stack a greater number of the thus produced dielectric layers.
However, when the dielectric layers are thinned out, a voltage applied to a unit thickness intrinsically increases. Accordingly, the operating life of the dielectric layers is shortened and thus a reliability of the multilayer ceramic capacitor is also deteriorated.
SUMMARY OF THE INVENTION
It is, therefore, an object of the present invention to provide highly reliable dielectric ceramic compositions and ceramic capacitors prepared by employing such dielectric ceramic compositions in forming dielectric layers thereof, wherein the dielectric ceramic compositions exhibit such electrical characteristics as a dielectric constant equal to or greater than 10,000, a capacitance variation of −80% to +30% (based on a capacitance obtained at a temperature of +20° C.) in the temperature range from −25° C. to +85° C., a dielectric loss “tanδ” of 10.0% or less and an accelerated life of 200,000 seconds or greater.
In accordance with a preferred embodiment of the present invention, there is provided a dielectric ceramic composition comprising: 100 mol % of an oxide of Ba, Ti and Zr, the content of the oxide of the Ba, Ti and Zr being calculated by assuming that the oxide thereof is Ba(Ti
1−x
Zr
x
)O
3
; 0.25 to 1.5 mol % of an oxide of Re, Re representing one or more elements selected from the group consisting of Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Y, the content of the oxide of the Re being calculated by assuming that the oxide thereof is Re
2
O
3
; 0.1 to 0.4 mol % of an oxide of Mg, the content of the oxide of the Mg being calculated by assuming that the oxide thereof is MgO; 0.03 to 0.6 mol % of oxides of one or more elements selected from the group consisting of Mn, V and Cr, the contents of the oxides of the Mn, V and Cr being calculated by assuming that the oxides thereof are Mn
2
O
3
, V
2
O
5
and Cr
2
O
3
, respectively; 0.02 to 0.3 mol % of oxides of one or two elements of Mo and W, the contents of the oxides of Mo and W being calculated by assuming that the oxides thereof Mo
3
O
3
, WO
3
, respectively; and a glass component including SiO
2
, wherein x in the oxide of Ba(Ti
1−x
Zr
x
)O
3
ranges from about 0.05 to about 0.26.
BRIEF DESCRIPTION OF THE DRAWINGS
The above and other objects and features of the present invention will become apparent from the following description of a preferred embodiment given in conjunction with the accompanying drawings in which:
FIG. 1
represents a schematic cross sectional view illustrating a multilayer ceramic capacitor;
FIG. 2
is a triangular composition diagram for showing compositions of B
2
O
3
—SiO
2
—MO in a unit of mol %; and
FIG. 3
sets forth a triangular composition diagram for illustrating compositions of Li
2
O—SiO
2
—MO in a unit of mol %.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
Compound powders of BaCO
3
, TiO
2
, ZrO
2
, Re
2
O
3
, MgO, Mn
2
O
3
V
2
O
5
, Cr
2
O
3
, Mo
3
, WO
3
and a glass component including SiO
2
were weighed in amounts as specified in the accompanying Tables 1-1 to 1-6 and mixed for about 20 hours by a wet method in a ball mill containing therein PSZ (partially sterilized zirconia) balls and water to thereby obtain a ceramic slurry. The produced ceramic slurry (containing 30% of water) was dehydrated and then dried by being heated at about 200° C. for 5 hours. It should be noted that “Re” is selected, e.g., from the group consisting of Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Y.
Thereafter, the dried ceramic slurry was ground and then calcined in air at about 800° C. for 3 hours. The calcined slurry was then crushed by employing a wet method in a ball mill added with ethanol for about 10 hours. Next, the crushed ceramic slurry was dried by being heated at about 200° C. for 5 hours, thereby obtaining the powder of the calcined ceramic slurry.
In a following step, a dielectric ceramic slurry was obtained by mixing and grinding 1000 g (100 parts by weight) of the powder of the calcined ceramic slurry, 15 wt % of an organic binder and 50 wt % of water in a ball mill, wherein the organic binder includes acrylic ester polymer, glycerin, and a solution of condensed phosphate.
Next, the dielectric slurry was subjected to a vacuum air separator to remove air bubbles therefrom and formed into a thin film coated on a polyester film by using a reverse roll coater. Thus produced ceramic thin film on the polyester film was heated and dried at about 100° C. and then diced to thereby obtain square ceramic green sheets having a thickness of about 5 μm and a size of about 10 cm×10 cm.
Meanwhile, 0.9 g of ethyl cellulose dissolved in 9.1 g of butyl carbitol and 10 g of Nickel powder having an average diameter of about 0.5 μm were loaded and stirred in a stirrer for 10 hours to form a conductive paste for use in forming internal electrodes of ceramic capacitors. Thereafter, the conductive paste was printed on the prepared ceramic green sheets to form conductive patterns thereon and then the printed conductive paste was dried.
Subsequently, ten ceramic green sheets having the conductive patterns thereon were stacked against each other with the conductive patterns facing upward, thereby forming a laminated body. Every two neighboring sheets were disposed in such a manner that the conductive patterns provided thereon were shifted by one half of a pattern size along the length direction. The laminated body also included one or more ceramic dummy sheets stacked against each of the uppermost and the lowermost ceramic green sheets having conductive patterns thereon, the ceramic dummy sheets representing ceramic green sheets without having conductive patterns thereon.
Next, the laminated body was pressed with a load of about 40 tons at about 50° C. along the stacking direction of the ceramic sheets in the laminated body. Afterwards, the pressed laminated body was diced into a multiplicity of chip shaped ceramic bodies having a size of about 3.2 mm×1.6 mm.
Thereafter, Ni external electrodes were formed at two opposite sides of each chip shaped ceramic body by, e.g., a dipping method, the internal electrodes being alternately exposed to the two opposite sides of each chip shaped ceramic body. Then, the chip shaped ceramic bodies were loaded into a furnace capable of controlling an atmosphere therein and the organic binder contained in the loaded ceramic bodies was removed by heating the furnace in an N
2
atmosphere. Then, the binder-removed chip shaped ceramic bodies were sintered at about 1200° C. in a non-oxidative atmosphere with oxygen partial pressure being in 10
−5
to 10
−8
atm order range. Thereafter, the sintered chip-shaped ceramic bodies were re-oxidized in a neutral atmosphere to thereby obtain multilayer ceramic capacitors as shown in
FIG. 1
, wherein reference numerals 10, 12 and 14 in the
FIG. 1
represent dielectric layers, internal electrodes and external electrodes, respectively.
Tables 2-1 to 2-6 exhibit a measurement result of electrical characteristics obtained from the thus produced multilayer ceramic capacitors, wherein a thickness of each dielectric layer incorporated in the capacitors was about 3 μm.
The electrical characteristics of the multilayer ceramic capacitors were obtained as follows.
(A) Relative permittivity or dielectric constant ε
s
was computed based on a facing area of a pair of neighboring internal electrodes, a thickness of a dielectric layer positioned between the pair of neighboring internal electrodes, and the capacitance of a multilayer ceramic capacitor obtained under the condition of applying at 20° C. a voltage of 1.0 V (root mean square value) with a frequency of 1 kHz.
(B) Dielectric loss tanδ (%) was obtained under the same condition as established for measuring the permittivity cited above.
(C) Resistivity (Ω cm) was acquired by measuring a resistance between a pair of external electrodes after DC 25 V was applied for 60 seconds at 20° C. The number following “E” in the notation of a resistivity value presented in the accompanying Tables 2-1 to 2-6 represents an order. For instance, 4.8E+12 represents 4.8×10
12
.
(D) Accelerated life (second) was obtained by measuring time period until an insulation resistivity (ρ) becomes 1×10
10
Ω cm in a DC electric field of 20 V/μm at 150° C.
(E) Capacitance variation ΔC/C
20
(%) was obtained by measuring capacitances at −25° C. and +85° C. in a thermostatic (or constant temperature) oven under the condition of applying a voltage of 1 V (rms value) with a frequency of 1 kHz, wherein C
20
represents a capacitance at 20° C. and Δ C represents the difference between C
20
and a capacitance measured at −25° C. or +85° C.
As clearly seen from Tables 1-1 to 1-6 and Tables 2-1 to 2-6, multilayer ceramic capacitors with highly improved reliability having permittivity (ε) equal to or greater than 10,000, capacitance variation ΔC/C
20
within the range from −80% to +30% at temperatures ranging from −25° C. to +85° C., tan δ of 10.0% or less and accelerated life of 200,000 seconds or greater could be obtained from the above samples sintered in a non-oxidative atmosphere even at a temperature of 1200° C. or lower in accordance with the present invention.
However, samples 1 to 3, 25 to 27, 29, 34, 36, 41, 42, 58, 61, 62, 66, 67, 71, 72, 75, 79, 82, 84 to 86, 108 to 111, 115, 116, 122, 123, 131, 137, 138, 142, 143, 146, 150, 153, 155, 159 (marked with “” at the column of sample numbers in Tables) could not satisfy the above-specified electrical characteristics and further, when these samples are employed, a highly densified ceramic body may not be obtained by the sintering at 1200° C. Therefore, it appears that such samples fall outside a preferable compositional range of the present invention.
The reasons why the preferable compositional range for the dielectric ceramics in accordance with the present invention should be limited to certain values will now be described.
First, when the content of an oxide of a rare-earth element represented by Re is 0 mol % in terms of Re
2
O
3
(i.e., assuming the oxide of Re is in the form of Re
2
O
3
) as in the sample 36, the tanδ thereof goes over 10.0% or capacitance variation ΔC/C
20
deviates from the range from −80% to +30% at temperatures ranging from −25° C. to +85° C.; whereas when the oxide of Re is set to be 0.25 mol % in terms of Re
2
O
3
as in sample 37, the desired electrical characteristics can be successfully obtained.
Further, when the content of the oxide of the rare-earth element Re is 2.0 mol % in terms of Re
2
O
3
as in the sample 41, a highly densified ceramic body may not be obtained by the sintering at 1200° C. However, when the content of the oxide of Re is set to be 1.5 mol % in terms of Re
2
O
3
as in sample 40, the desired electrical characteristics can be successfully obtained.
Accordingly, the preferable range of the content of oxide of the rare-earth element Re is from 0.25 to 1.5 mol % in terms of Re
2
O
3
.
It is noted that same effects can be produced regardless of whether a single rare-earth element is used as in samples 43 to 53 or two or more of rare-earth elements are used together as in samples 54 to 57 as long as the above-described preferable content range of the rare-earth element Re is satisfied.
When the content of the oxide of Mg is 0 mol % in terms of MgO as in the sample 58, the tanδ thereof goes over 10.0% or capacitance variation ΔC/C
20
of the produced multilayer ceramic capacitors deviates from the range from −80% to +30% when the temperature varies from −25° C. to +85° C.; whereas when the oxide of Mg is set to be 0.1 mol % in terms of MgO as in sample 59, the desired electrical characteristics can be successfully obtained.
In addition, when the content of the oxide of Mg is 0.6 mol % in terms of MgO as in the sample 61, the relative permittivity of the produced multilayer ceramic capacitors may become equal to or less than 10,000 or the capacitance variation ΔC/C
20
of the produced multilayer ceramic capacitors deviates from the range from −80% to +30% when the temperature varies from −25° C. to +85° C.; and accordingly, the desired accelerated life cannot be obtained. However, when the content of the oxide of Mg is set to be 0.4 mol % in terms of MgO as in sample 60, the desired electrical characteristics can be successfully obtained.
Accordingly, the content of the oxide of Mg desirably ranges from 0.1 to 0.4 mol % in terms of MgO.
When the content of an oxide of each element Mn, V or Cr is 0.02 mol % in terms of Mn
2
O
3
, V
2
O
5
or Cr
2
O
3
, as in the samples 1 to 3, the desired accelerated life of the produced multilayer ceramic capacitors may not be obtained; whereas when the total content of the oxides of Mn, V and Cr is set to be 0.03 mol % in terms of Mn
2
O
3
, V
2
O
5
and Cr
2
O
3
, as in samples 4 to 6, the desired characteristics can be successfully attained.
Further, when the content of an oxide of Mn, V or Cr is 0.7 mol % in terms of Mn
2
O
3
, V
2
O
5
or Cr
2
O
3
, as in the samples 25 to 27, the dielectric constant of the capacitors becomes equal to or less than 10,000. However, when the content of sum of the oxides of Mn, V and Cr is set to be 0.6 mol % in terms of Mn
2
O
3
, V
2
O
5
and Cr
2
O
3
, as in samples 22 to 24, the desired characteristics can be successfully attained.
Accordingly, it is preferable that the total amount of oxides of Mn, V and Cr ranges from 0.03 to 0.6 mol % in terms of Mn
2
O
3
, V
2
O
5
and Cr
2
O
3
.
It is to be noted that same effects can be obtained regardless of whether an oxide of one of the elements Mn, V and Cr as in samples 4 to 6 and 13 to 18 is used alone or two or more thereof are used together as in samples 7 to 12 and 19 to 24 as long as the total content thereof satisfies the above specified range.
Further, the dielectric ceramic composition in accordance with the present invention may further include one or more oxides selected from the group consisting of oxides of Fe, Ni and Cu. In this case, it is preferable that a total content of oxides of Fe, Ni, Cu, Mn, V and Cr is 0.04 to 1.0 mol %, the total content being calculated by assuming that the oxides of Fe, Ni, Cu, Mn, V and Cr are FeO, NiO, CuO, Mn
2
O
3
, V
2
O
5
and Cr
2
O
3
, respectively.
When the content of oxides of Mo and/or W is 0 mol % in terms of MoO
3
and WO
3
as in the samples 29, 116 and 123, the desired operating life can not be obtained; whereas when the content of oxides of Mo and/or W is 0.02 mol % in terms of MoO
3
and WO
3
as in samples 30, 117 and 124, the desired electrical characteristics can be successfully obtained.
Moreover, when the content of oxides of Mo and/or W is 0.35 mol % in terms of MoO
3
and WO
3
as in the samples 34, 122 and 137, the tanδ thereof may be deteriorated over 10.0% and the capacitance variation ΔC/C
20
exceeds the range from −80% to +30% with the temperature varying from −25° C. to +85° C. However, when the total content of oxides is set to be 0.3 mol % as in samples 33, 121 and 136, the desired electrical characteristics can be successfully obtained.
Accordingly, it is preferable that the total content of the oxides of Mo and W ranges from 0.02 to 0.3 mol % in terms of MoO
3
and WO
3
.
Furthermore, same effects can be obtained regardless of whether the oxides of Mo and W are used separately as in the samples 30 to 33 and 117 to 121 or used together as in the samples 124 to 130 and 132 to 136.
The optimum range of the glass component varies depending on the constituents thereof.
First, in case the glass component is substantially formed of SiO
2
only, the optimum content of the glass component is as follows:
When the content of SiO
2
is 0.00 mol % as in the sample 111, a highly densified ceramic body may not be obtained by the sintering process at 1200° C.; whereas when the content of SiO
2
is set to be 0.2 mol % as in sample 112, the desired electrical characteristics can be successfully obtained.
Further, when the content of SiO
2
is 5.0 mol % as in the sample 115, the dielectric constant of the capacitors becomes equal to or less than 10,000 and accordingly the desired accelerated life may not be obtained; whereas when the content of SiO
2
is set to be 4.0 mol % as in sample 114, the desired electrical characteristics can be obtained.
Accordingly, the content of the glass component mainly formed of SiO
2
preferably ranges from 0.2 mol % and 4.0 mol %.
In case the glass component including SiO
2
is composed of Li
2
O—BaO—TiO
2
—SiO
2
, the optimum range of the content of Li
2
O—BaO—TiO
2
—SiO
2
preferably is determined as follows:
When the total content of glass component Li
2
O—BaO—TiO
2
—SiO
2
is 0 mol % as in the sample 62, tanδ of the produced capacitor may be deteriorated over 10.0% or the desired accelerated life may not be obtained; whereas when the content of the glass component Li
2
O—BaO—TiO
2
—SiO
2
is 0.05 mol % as in sample 63, the desired electrical characteristics can be successfully attained.
Further, when the content of the glass component Li
2
O—BaO—TiO
2
—SiO
2
is 2.0 mol % as in the sample 66, the relative permittivity of the produced multilayer ceramic capacitor may fall below 10,000 or the desired accelerated life may not be attained; whereas when the content of the glass component Li
2
O—BaO—TiO
2
—SiO
2
is 1.0 mol % as in sample 65, the desired electrical characteristics can be obtained.
Accordingly, the total content of the glass component Li
2
O—BaO—TiO
2
—SiO
2
is preferably between 0.05 and 1.0 wt % inclusive.
In case the glass component including SiO
2
is composed of B
2
O
3
—SiO
2
—MO (MO used herein represents one or more oxides selected from the group of BaO, SrO, CaO, MgO and ZnO), the preferable composition of B
2
O
3
—SiO
2
—MO for obtaining desired electrical characteristics is within the range surrounded by 6 lines formed by cyclically connecting 6 points A, B, C, D, E and F in that order shown in a triangular composition diagram of
FIG. 2
, wherein the triangular composition diagram exhibits a composition of B
2
O
3
—SiO
2
—MO in terms of their mol %. The first point A represents a composition containing 1 mol % of B
2
O
3
, 80 mol % of SiO
2
and 19 mol % of MO, a second point B represents a composition including 1 mol % of B
2
O
3
, 39 mol % of SiO
2
and 60 mol % of MO. The third point C represents a composition containing 29 mol % of B
2
O
3
, 1 mol % of SiO
2
and 70 mol % of MO. The fourth point D represents a composition containing 90 mol % of B
2
O
3
, 1 mol % of SiO
2
and 9 mol % of MO. The fifth point E represents a composition containing 90 mol % of B
2
O
3
, 9 mol % of SiO
2
and 1 mol % of MO and the sixth point F represents a composition containing 19 mol % of B
2
O
3
, 80 mol % of SiO
2
and 1 mol % of MO. If a B
2
O
3
—SiO
2
—Mo composition is within the range defined with 6 points described above as in samples 73, 74, 76 to 78, 80, 81 and 83, the desired electrical characteristics can be obtained. However, if the composition is out of the range as in the samples 72, 75, 79 and 82, a highly densified ceramic body may not be attained at 1200° C.
Further, when the content of B
2
O
3
—SiO
2
—MO is 0 wt % as in the sample 67, a highly densified ceramic body may not be obtained when sintered at 1200° C.; whereas when the content of B
2
O
3
—SiO
2
—Mo is 0.05 wt % as in sample 68, the desired electrical characteristics can be successfully attained.
Still further, when the content of B
2
O
3
—SiO
2
—Mo is 10.00 wt % as in the sample 71, the relative permittivity may become less than 10,000 or the desired accelerated life may not be obtained; whereas when the content of B
2
O
3
—SiO
2
—Mo is set to be 5.00 wt % as in sample 70, the desired electrical characteristics can be obtained.
Accordingly, the content of B
2
O
3
—SiO
2
—Mo preferably ranges from 0.05 to 5.0 wt %.
When the glass component including SiO
2
is composed of Li
2
O—SiO
2
—MO (Mo used herein represents one or more oxides selected from the group consisting of BaO, SrO, CaO, MgO and ZnO), the preferable compositional range for Li
2
O—SiO
2
—MO is within the range surrounded by 6 lines formed by cyclically connecting 6 points G, H, I, J, K and L in that order as shown in a triangular composition diagram of
FIG. 3
, wherein the triangular diagram shows a compositional of Li
2
O—SiO
2
—MO in a unit of mol %. The seventh point G represents a composition containing 1 mol % of Li
2
O, 94 mol % of SiO
2
and 5 mol % of MO. The eighth point H represents a composition containing 1 mol % of Li
2
O, 19 mol % of SiO
2
and 80 mol % of MO. The ninth point I represents a composition containing 19 mol % of Li
2
O, 1 mol % of SiO
2
and 80 mol % of MO. The tenth point J represents a composition containing 89 mol % of Li
2
O, 1 mol % of SiO
2
and 10 mol % of MO. The eleventh point K represents a composition containing 90 mol % of Li
2
O
3
, 9 mol % of SiO
2
and 1 mol % of MO and the twelfth point L represents a composition containing 5 mol % of Li
2
O, 94 mol % of SiO
2
and 1 mol % of MO. If a Li
2
O—SiO
2
—Mo composition falls within the range defined by the 6 G-L, as in samples 144, 145, 147 to 149, 151, 152 and 154, the desired electrical characteristics can be obtained. However, if otherwise as in the samples 143, 146, 150 and 153, a highly densified ceramic body with a highly improved density may not be attained after being sintered at 1200° C. or the relative permittivity may become less than 10,000.
Further, when the content of Li
2
O—SiO
2
—MO is 0 wt % as in the sample 138, a highly densified ceramic body may not be obtained by the sintering process at 1200° C.; whereas when the content of Li
2
O—SiO
2
—MO is set as 0.05 wt % as in sample 139, the desired electrical characteristics can be acquired.
Still further, when the content of Li
2
O—SiO
2
—MO is 10.00 wt % as in the sample 142, a highly densified ceramic body may not be gained by the sintering at 1200° C.; whereas when the content of Li
2
O—SiO
2
—MO is set to be 5.00 wt % as in sample 141, the desired electrical characteristics can be successfully obtained.
Accordingly, the content of Li
2
O—SiO
2
—MO optimally ranges from 0.05 to 5.0 wt %.
When x in the oxide of Ba(Ti
1−x
Zr
x
)O
3
is 0.00 as in the sample 155, the desired accelerated life may not be attained; whereas when x in the oxide of Ba(Ti
1−x
Zr
x
)O
3
is 0.05 as in sample 156, the desired electrical characteristics can be successfully obtained.
Further, When x in the oxide of Ba(Ti
1−x
Zr
x
)O
3
is 0.3 as in the sample 159, the relative permittivity may become less than 10,000; whereas when x in the oxide of Ba(Ti
1−x
Zr
x
)O
3
is 0.26 as in the sample 158, the desired electrical characteristics can be successfully obtained.
Accordingly, it is preferable that the value of x in the oxide of Ba(Ti
1−x
Zr
x
)O
3
is equal to or greater than 0.05 and equal to or less than 0.26.
The present invention can produce a multilayer ceramic capacitor capable of providing a desired accelerated life with a highly improved reliability, wherein the capacitor exhibits a relative permittivity εr of 10,000 or greater, tanδ of 10.0% or less and a capacitance variation ΔC/C
20
ranging from −80% to +30% with the temperature variances from −25° C. to +85° C.
It should be noted that other types of raw materials can be employed as source materials for obtaining the ceramic slurry. For instance, barium acetate or barium nitrate can be used instead of BaCO
3
.
Although the present invention has been described with reference to the multilayer ceramic capacitors only, it should be apparent to those skilled in the art that the present invention can also be applied to single-layer ceramic capacitors.
While the invention has been shown and described with respect to the preferred embodiments, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the following claims.
TABLE 1-1
|
|
content of the glass
|
composition of minor additives (mol %)
component (wt %)
|
Main component (mol %)
rare-earth
content
|
sample
composition
(Re
2
O
3
)
transition metal
total
#1
B
2
O
3
-SiO
2
-MO
←mol
|
number
Ba
Ti
Zr
Ba/(TiZr)
element
content
MgO
Mn
2
O
3
V
2
O
5
Cr
2
O
3
content
MoO
3
Li
2
O-
M
B
2
O
3
SiO
2
MO
ratio
|
|
1&Asteriskpseud;
100
86
14
1.003
Ho
1.0
0.2
0.02
—
—
0.02
0.1
0.1
—
—
—
—
—
|
2&Asteriskpseud;
100
86
14
1.003
Ho
1.0
0.2
—
0.02
—
0.02
0.1
0.1
—
—
—
—
—
|
3&Asteriskpseud;
100
86
14
1.003
Ho
1.0
0.2
—
—
0.02
0.02
0.1
0.1
—
—
—
—
—
|
4
100
86
14
1.003
Ho
1.0
0.2
0.03
—
—
0.03
0.1
0.1
—
—
—
—
—
|
5
100
86
14
1.003
Ho
1.0
0.2
—
0.03
—
0.03
0.1
0.1
—
—
—
—
—
|
6
100
86
14
1.003
Ho
1.0
0.2
—
—
0.03
0.03
0.1
0.1
—
—
—
—
—
|
7
100
86
14
1.003
Ho
1.0
0.2
0.01
0.02
—
0.03
0.1
0.1
—
—
—
—
—
|
8
100
86
14
1.003
Ho
1.0
0.2
0.05
0.02
—
0.07
0.1
0.1
—
—
—
—
—
|
9
100
86
14
1.003
Ho
1.0
0.2
0.05
—
0.1
0.15
0.1
0.1
—
—
—
—
—
|
10
100
86
14
1.003
Ho
1.0
0.2
0.05
0.01
0.1
0.16
0.1
0.1
—
—
—
—
—
|
11
100
86
14
1.003
Ho
1.0
0.2
0.1
0.05
0.1
0.25
0.1
0.1
—
—
—
—
—
|
12
100
86
14
1.003
Ho
1.0
0.2
0.1
0.1
0.1
0.3
0.1
0.1
—
—
—
—
—
|
13
100
86
14
1.003
Ho
1.0
0.2
0.3
—
—
0.3
0.1
0.1
—
—
—
—
—
|
14
100
86
14
1.003
Ho
1.0
0.2
—
0.3
—
0.3
0.1
0.1
—
—
—
—
—
|
15
100
86
14
1.003
Ho
1.0
0.2
—
—
0.3
0.3
0.1
0.1
—
—
—
—
—
|
16
100
86
14
1.003
Ho
1.0
0.2
0.6
—
—
0.6
0.1
0.1
—
—
—
—
—
|
17
100
86
14
1.003
Ho
1.0
0.2
—
0.6
—
0.6
0.1
0.1
—
—
—
—
—
|
18
100
86
14
1.003
Ho
1.0
0.2
—
—
0.6
0.6
0.1
0.1
—
—
—
—
—
|
19
100
86
14
1.003
Ho
1.0
0.2
0.3
0.3
—
0.6
0.1
0.1
—
—
—
—
—
|
20
100
86
14
1.003
Ho
1.0
0.2
0.3
—
0.3
0.6
0.1
0.1
—
—
—
—
—
|
21
100
86
14
1.003
Ho
1.0
0.2
—
0.3
0.3
0.6
0.1
0.1
—
—
—
—
—
|
22
100
86
14
1.003
Ho
1.0
0.2
0.2
—
0.4
0.6
0.1
0.1
—
—
—
—
—
|
23
100
86
14
1.003
Ho
1.0
0.2
0.1
—
0.5
0.6
0.1
0.1
—
—
—
—
—
|
24
100
86
14
1.003
Ho
1.0
0.2
0.2
0.2
0.2
0.6
0.1
0.1
—
—
—
—
—
|
25&Asteriskpseud;
100
86
14
1.003
Ho
1.0
0.2
0.7
—
—
0.7
0.1
0.1
—
—
—
—
—
|
26&Asteriskpseud;
100
86
14
1.003
Ho
1.0
0.2
—
0.7
—
0.7
0.1
0.1
—
—
—
—
—
|
27&Asteriskpseud;
100
86
14
1.003
Ho
1.0
0.2
—
—
0.7
0.7
0.1
0.1
—
—
—
—
—
|
28
100
86
14
1.003
Ho
1.0
0.2
0.2
0.1
0.4
0.7
0.1
0.1
—
—
—
—
—
|
29&Asteriskpseud;
100
86
14
1.003
Ho
1.0
0.2
0.05
0.1
0.1
0.25
0
0.1
—
—
—
—
—
|
|
Sample numbers marked with &Asteriskpseud; are comparative examples.
|
#1 Li
2
O-: Li
2
O-BaO-TiO
2
-SiO
2
|
TABLE 1-2
|
|
content of the glass
|
composition of minor additives (mol %)
component (wt %)
|
Main component (mol %)
rare-earth
content
|
sample
composition
(Re
2
O
3
)
transition metal
total
#1
B
2
O
3
-SiO
2
-MO
←mol
|
number
Ba
Ti
Zr
Ba/(TiZr)
element
content
MgO
Mn
2
O
3
V
2
O
5
Cr
2
O
3
content
MoO
3
Li
2
O-
M
B
2
O
3
SiO
2
MO
ratio
|
|
30
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
0.1
0.25
0.025
0.1
—
—
—
—
—
|
31
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
0.1
0.25
0.05
0.1
—
—
—
—
—
|
32
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
0.1
0.25
0.1
0.1
—
—
—
—
—
|
33
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
0.1
0.25
0.3
0.1
—
—
—
—
—
|
34&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
0.1
0.25
0.35
0.1
—
—
—
—
—
|
35
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05
—
0.2
0.1
0.1
—
—
—
—
—
|
36&Asteriskpseud;
100.3
86
14
1.003
Ho
0
0.2
0.15
0.05
—
0.2
0.1
0.1
—
—
—
—
—
|
37
100.3
86
14
1.003
Ho
0.25
0.2
0.15
0.05
—
0.2
0.1
0.1
—
—
—
—
—
|
38
100.3
86
14
1.003
Ho
0.5
0.2
0.15
0.05
—
0.2
0.1
0.1
—
—
—
—
—
|
39
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05
—
0.2
0.1
0.1
—
—
—
—
—
|
40
100.3
86
14
1.003
Ho
1.5
0.2
0.15
0.05
—
0.2
0.1
0.1
—
—
—
—
—
|
41&Asteriskpseud;
100.3
86
14
1.003
Ho
2.0
0.2
0.15
0.05
—
0.2
0.1
0.1
—
—
—
—
—
|
42&Asteriskpseud;
100.3
86
14
1.003
Ho
4.0
0.2
0.15
0.05
—
0.2
0.1
0.1
—
—
—
—
—
|
43
100.3
86
14
1.003
Sm
0.25
0.2
0.15
0.05
—
0.2
0.1
0.1
—
—
—
—
—
|
44
100.3
86
14
1.003
Sm
0.75
0.2
0.15
0.05
—
0.2
0.1
0.1
—
—
—
—
—
|
45
100.3
86
14
1.003
Eu
0.75
0.2
0.15
0.05
—
0.2
0.1
0.1
—
—
—
—
—
|
46
100.3
86
14
1.003
Gd
0.75
0.2
0.15
0.05
—
0.2
0.1
0.1
—
—
—
—
—
|
47
100.3
86
14
1.003
Tb
0.75
0.2
0.15
0.05
—
0.2
0.1
0.1
—
—
—
—
—
|
48
100.3
86
14
1.003
Dy
0.75
0.2
0.15
0.05
—
0.2
0.1
0.1
—
—
—
—
—
|
49
100.3
86
14
1.003
Er
0.75
0.2
0.15
0.05
—
0.2
0.1
0.1
—
—
—
—
—
|
50
100.3
86
14
1.003
Tm
0.75
0.2
0.15
0.05
—
0.2
0.1
0.1
—
—
—
—
—
|
51
100.3
86
14
1.003
Yb
0.75
0.2
0.15
0.05
—
0.2
0.1
0.1
—
—
—
—
—
|
52
100.3
86
14
1.003
Yb
1.0
0.2
0.15
0.05
—
0.2
0.1
0.1
—
—
—
—
—
|
53
100.3
86
14
1.003
Y
1.0
0.2
0.15
0.05
—
0.2
0.1
0.1
—
—
—
—
—
|
54
100.3
86
14
1.003
Ho/Dy
0.5/0.5
0.2
0.15
0.05
—
0.2
0.1
0.1
—
—
—
—
—
|
55
100.3
86
14
1.003
Ho/Dy/Yb
.5/0.5/0.
0.2
0.15
0.05
—
0.2
0.1
0.1
—
—
—
—
—
|
56
100.3
86
14
1.003
Sm/Ho/Yb
.2/0.5/0.
0.2
0.15
0.05
—
0.2
0.1
0.1
—
—
—
—
—
|
57
100.3
86
14
1.003
Sm/Yb
0.5/1.0
0.2
0.15
0.05
—
0.2
0.1
0.1
—
—
—
—
—
|
58&Asteriskpseud;
100.3
86
14
1.003
Ho
1
0
0.15
0.05
—
0.2
0.1
0.1
—
—
—
—
—
|
|
Sample numbers marked with &Asteriskpseud; are comparative examples.
|
#1 Li2O-: Li2O-BaO-TiO2-SiO2
|
TABLE 1-3
|
|
content of the glass
|
composition of minor additives (mol %)
component (wt %)
|
Main component (mol %)
rare-earth
content
|
sample
composition
(Re
2
O
3
)
transition metal
total
#1
B
2
O
3
-SiO
2
-MO
←mol
|
number
Ba
Ti
Zr
Ba/(TiZr)
element
content
MgO
Mn
2
O
3
V
2
O
5
Cr
2
O
3
content
MoO
3
Li
2
O-
M
B
2
O
3
SiO
2
MO
ratio
|
|
59
100.3
86
14
1.003
Ho
1
0.1
0.15
0.05
—
0.2
0.1
0.1
—
—
—
—
—
|
60
100.3
86
14
1.003
Ho
1
0.4
0.15
0.05
—
0.2
0.1
0.1
—
—
—
—
—
|
61&Asteriskpseud;
100.3
86
14
1.003
Ho
1
0.6
0.15
0.05
—
0.2
0.1
0.1
—
—
—
—
—
|
62&Asteriskpseud;
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
—
0.2
0.1
0
—
—
—
—
—
|
63
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
—
0.2
0.1
0.05
—
—
—
—
—
|
64
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
—
0.2
0.1
0.5
—
—
—
—
—
|
65
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
—
0.2
1.1
1
—
—
—
—
—
|
66&Asteriskpseud;
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
—
0.2
2.1
2
—
—
—
—
—
|
67&Asteriskpseud;
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05
—
Ca
15
65
20
0.00
|
68
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05
—
Ca
15
65
20
0.05
|
69
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05
—
Ca
15
65
20
2.00
|
70
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05
—
Ca
15
65
20
5.00
|
71&Asteriskpseud;
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05
—
Ca
15
65
20
10.00
|
72&Asteriskpseud;
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05
—
Ca
95
4
1
1.00
|
73
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05
—
Ca
90
9
1
1.00
|
74
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05
—
Ca
90
1
9
1.00
|
75&Asteriskpseud;
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05
—
Ca
50
50
0
1.00
|
76
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05
—
Ca
20
70
10
1.00
|
77
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05
—
Ca
19
80
1
1.00
|
78
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05
—
Ca
1
80
19
1.00
|
79&Asteriskpseud;
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05
—
Ca
4
95
1
1.00
|
80
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05
—
Ca
1
39
60
1.00
|
81
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05
—
Ca
29
1
70
1.00
|
82&Asteriskpseud;
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05
—
Ca
4
5
95
1.00
|
83
100.3
86
14
1.003
Ho
1
0.2
0.15
0.05
0.2
0.4
0.05
—
Ca
20
30
50
1.00
|
|
Sample numbers marked with &Asteriskpseud; are comparative examples.
|
#1 Li2O-: Li2O-BaO-TiO2-SiO2
|
TABLE 1-4
|
|
content of the glass
|
composition of minor additives (mol %)
component (wt %)
|
Main component (mol %)
rare-earth
content
|
sample
composition
(Re
2
O
3
)
transition metal
total
#1
B
2
O
3
-SiO
2
-MO
←mol
|
number
Ba
Ti
Zr
Ba/(TiZr)
element
content
MgO
Mn
2
O
3
V
2
O
5
Cr
2
O
3
content
MoO
3
Li
2
O-
M
B
2
O
3
SiO
2
MO
ratio
|
|
84&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.02
—
—
0.02
0.05
0.05
0.1
Ba
15
20
1.00
|
85&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
—
0.02
—
0.02
0.05
0.05
0.1
Ba
15
20
1.00
|
86&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
—
—
0.02
0.02
0.05
0.05
0.1
Ba
15
20
1.00
|
87
100.3
86
14
1.003
Ho
1.0
0.2
0.03
—
—
0.03
0.05
0.05
0.1
Ca
15
20
1.00
|
88
100.3
86
14
1.003
Ho
1.0
0.2
—
0.03
—
0.03
0.05
0.05
0.1
Ca
15
20
1.00
|
89
100.3
86
14
1.003
Ho
1.0
0.2
—
—
0.03
0.03
0.05
0.05
0.1
Ca
15
20
1.00
|
90
100.3
86
14
1.003
Ho
1.0
0.2
0.01
0.02
—
0.03
0.05
0.05
0.1
Sr
15
20
1.00
|
91
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.02
—
0.07
0.05
0.05
0.1
Sr
15
20
1.00
|
92
100.3
86
14
1.003
Ho
1.0
0.2
0.05
—
0.1
0.15
0.05
0.05
0.1
Sr
15
20
1.00
|
93
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.01
0.1
0.16
0.05
0.05
0.1
Sr
15
20
1.00
|
94
100.3
86
14
1.003
Ho
1.0
0.2
0.1
0.05
0.1
0.25
0.05
0.05
0.1
Mg
15
20
1.00
|
95
100.3
86
14
1.003
Ho
1.0
0.2
0.1
0.1
0.1
0.3
0.05
0.05
0.1
Mg
15
20
1.00
|
96
100.3
86
14
1.003
Ho
1.0
0.2
0.3
—
—
0.3
0.05
0.05
0.1
Mg
15
20
1.00
|
97
100.3
86
14
1.003
Ho
1.0
0.2
—
0.3
—
0.3
0.05
0.05
0.1
Mg
15
20
1.00
|
98
100.3
86
14
1.003
Ho
1.0
0.2
—
—
0.3
0.3
0.05
0.05
0.1
Mg
15
20
1.00
|
99
100.3
86
14
1.003
Ho
1.0
0.2
0.6
—
—
0.6
0.05
0.05
0.1
Zn
15
20
1.00
|
100
100.3
86
14
1.003
Ho
1.0
0.2
—
0.6
—
0.6
0.05
0.05
0.1
Zn
15
20
1.00
|
101
100.3
86
14
1.003
Ho
1.0
0.2
—
—
0.6
0.6
0.05
0.05
0.1
Zn
15
20
1.00
|
102
100.3
86
14
1.003
Ho
1.0
0.2
0.3
0.3
—
0.6
0.05
0.05
0.1
Ba
15
20
1.00
|
103
100.3
86
14
1.003
Ho
1.0
0.2
0.3
—
0.3
0.6
0.05
0.05
0.1
Ba
15
20
1.00
|
104
100.3
86
14
1.003
Ho
1.0
0.2
—
0.3
0.3
0.6
0.05
0.05
0.1
Ba
15
20
1.00
|
105
100.3
86
14
1.003
Ho
1.0
0.2
0.2
—
0.4
0.6
0.05
0.05
0.1
Ba
15
20
1.00
|
106
100.3
86
14
1.003
Ho
1.0
0.2
0.1
—
0.5
0.6
0.05
0.05
0.1
Ba
15
20
1.00
|
107
100.3
86
14
1.003
Ho
1.0
0.2
0.2
0.2
0.2
0.6
0.05
0.05
0.1
Ba
15
20
1.00
|
108&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.7
—
—
0.7
0.05
0.05
0.1
Ba/Ca
15
10/10
1.00
|
109&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
—
0.7
—
0.7
0.05
0.05
0.1
Ba/Ca
15
10/10
1.00
|
110&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
—
—
0.7
0.7
0.05
0.05
0.1
Ba/Ca
15
10/10
1.00
|
|
Sample numbers marked with &Asteriskpseud; are comparative examples.
|
#1 Li2O-: Li2O-BaO-TiO2-SiO2
|
TABLE 1-5
|
|
composition of minor additives (mol %)
|
main component (mol %)
rare-earth
|
sample
composition
(Re
2
O
3
)
transition metal
total
total
(wt %)
|
number
Ba
Ti
Zr
Ba/(TiZr)
element
content
MgO
Mn
2
O
3
V
2
O
5
Cr
2
O
3
content
MoO
3
WO
3
content
SiO
2
|
|
111&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05
—
0.2
0.05
0.05
0.1
0
|
112
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05
—
0.2
0.05
0.05
0.1
0.2
|
113
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05
—
0.2
0.05
0.05
0.1
1
|
114
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05
—
0.2
0.05
0.05
0.1
4
|
115&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05
—
0.2
0.05
0.05
0.1
5
|
116&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
—
0.15
—
0
0
—
|
117
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
—
0.15
—
0.025
0.025
—
|
118
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
—
0.15
—
0.05
0.05
—
|
119
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
—
0.15
—
0.1
0.1
—
|
120
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
—
0.15
—
0.2
0.2
—
|
121
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
—
0.15
—
0.3
0.3
—
|
122&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
—
0.15
—
0.35
0.35
—
|
123&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
—
0.15
0
0
0
—
|
124
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
—
0.15
0.01
0.01
0.02
—
|
125
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
—
0.15
0.02
0.02
0.04
—
|
126
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
—
0.15
0
0.05
0.05
—
|
127
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
—
0.15
0.025
0.05
0.075
—
|
128
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
—
0.15
0.05
0.05
0.1
—
|
129
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
—
0.15
0.1
0.05
0.15
—
|
130
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
—
0.15
0.2
0.05
0.25
—
|
131&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
—
0.15
0.3
0.05
0.35
—
|
132
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
—
0.15
0.05
0
0.05
—
|
133
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
—
0.15
0.05
0.025
0.075
—
|
134
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
—
0.15
0.05
0.05
0.1
—
|
135
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
—
0.15
0.05
0.1
0.15
—
|
136
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
—
0.15
0.05
0.2
0.25
—
|
137&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.05
0.1
—
0.15
0.05
0.3
0.35
—
|
|
Sample numbers marked with &Asteriskpseud; are comparative examples.
|
TABLE 1-6
|
|
content of the glass component
|
main component
composition of minor additives (mol %)
(wt %)
|
(mol %)
rare-earth
content
content
|
sample
composition
Ba/
(Re
2
O
3
)
transition metal
total
←mol
B
2
O
3
-SiO
2
-MO
←mol
|
number
Ba
Ti
Zr
(TiZr)
element
content
MgO
Mn
2
O
3
V
2
O
5
Cr
2
O
3
content
MoO
3
WO
3
ratio
M
B
2
O
3
SiO
2
MO
ratio
|
|
138&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05
—
0.2
0.05
0.05
0.1
Ca
15
65
20
0.00
|
139
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05
—
0.2
0.05
0.05
0.1
Ca
15
65
20
0.05
|
140
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05
—
0.2
0.05
0.05
0.1
Ca
15
65
20
2.00
|
141
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05
—
0.2
0.05
0.05
0.1
Ca
15
65
20
5.00
|
142&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05
—
0.2
0.05
0.05
0.1
Ca
15
65
20
10.00
|
143&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05
—
0.2
0.05
0.05
0.1
Ca
95
4
1
1.00
|
144
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05
—
0.2
0.05
0.05
0.1
Ca
90
9
1
1.00
|
145
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05
—
0.2
0.05
0.05
0.1
Ca
89
1
10
1.00
|
146&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05
—
0.2
0.05
0.05
0.1
Ca
50
50
0
1.00
|
147
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05
—
0.2
0.05
0.05
0.1
Ca
20
70
10
1.00
|
148
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05
—
0.2
0.05
0.05
0.1
Ca
5
94
1
1.00
|
149
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05
—
0.2
0.05
0.05
0.1
Ca
1
94
5
1.00
|
150&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05
—
0.2
0.05
0.05
0.1
Ca
4
95
1
1.00
|
151
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05
—
0.2
0.05
0.05
0.1
Ca
1
79
20
1.00
|
152
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05
—
0.2
0.05
0.05
0.1
Ca
19
1
80
1.00
|
153&Asteriskpseud;
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05
—
0.2
0.05
0.05
0.1
Ca
4
5
95
1.00
|
154
100.3
86
14
1.003
Ho
1.0
0.2
0.15
0.05
—
0.2
0.05
0.05
0.1
Ca
20
30
50
1.00
|
155&Asteriskpseud;
100.5
100
0
1.005
Ho
1.0
0.2
0.15
0.05
—
0.2
0.05
0.05
0.1
Ca
20
30
50
1.00
|
156
100.5
95
5
1.005
Ho
1.0
0.2
0.15
0.05
—
0.2
0.05
0.05
0.1
Ca
20
30
50
1.00
|
157
100.5
80
20
1.005
Ho
1.0
0.2
0.15
0.05
—
0.2
0.05
0.05
0.1
Ca
20
30
50
1.00
|
158
100.5
74
26
1.005
Ho
1.0
0.2
0.15
0.05
—
0.2
0.05
0.05
0.1
Ca
20
30
50
1.00
|
159&Asteriskpseud;
100.5
70
30
1.005
Ho
1.0
0.2
0.15
0.05
—
0.2
0.05
0.05
0.1
Ca
20
30
50
1.00
|
|
Sample numbers marked with &Asteriskpseud; are comparative examples.
|
TABLE 2-1
|
|
capacitance
|
sample
sintering
tanδ
resistivity(Ω · cm) at room
variation(ΔC/ΔC
20
, %)
accelerated
|
number
temperature (° C.)
permittivity
(%)
temperature
−25° C.
+85° C.
life(sec)
|
|
1&Asteriskpseud;
1200
13099
7.32
8.85E + 12
−42.2
−68.3
127865
|
2&Asteriskpseud;
1200
15463
8.50
2.28E + 12
−40.8
−70.2
67865
|
3&Asteriskpseud;
1200
11498
7.64
4.37E + 12
−41.0
−72.6
157654
|
4
1200
11233
6.68
1.12E + 13
−43.7
−73.4
467600
|
5
1200
14455
7.03
9.68E + 12
−43.7
−71.6
497600
|
6
1200
13023
5.72
6.50E + 12
−43.2
−68.4
402800
|
7
1200
15703
5.92
6.01E + 12
−40.1
−72.7
444200
|
8
1200
13693
7.03
7.39E + 12
−43.3
−76.3
417800
|
9
1200
11833
6.79
3.37E + 12
−41.5
−76.9
341900
|
10
1200
12856
6.12
1.18E + 13
−42.4
−68.4
282500
|
11
1200
14985
5.68
5.32E + 12
−41.4
−74.6
359900
|
12
1200
13913
5.62
1.02E + 13
−43.1
−73.2
468200
|
13
1200
14123
8.28
9.13E + 12
−41.6
−69.5
437000
|
14
1200
15088
6.91
1.03E + 13
−41.5
−69.2
498800
|
15
1200
12531
5.11
8.93E + 12
−43.8
−73.5
448700
|
16
1200
14346
7.23
2.46E + 12
−41.5
−69.2
363500
|
17
1200
12689
5.57
4.71E + 12
−40.3
−69.6
374000
|
18
1200
15769
7.50
1.09E + 13
−41.0
−73.5
239600
|
19
1200
15674
6.02
2.86E + 12
−42.9
−67.3
358700
|
20
1200
12688
8.98
8.06E + 12
−42.4
−77.0
241100
|
21
1200
12655
8.51
3.18E + 12
−40.3
−68.7
426500
|
22
1200
15763
8.96
8.99E + 12
−41.3
−77.0
342500
|
23
1200
14045
7.83
8.92E + 12
−41.7
−76.7
245600
|
24
1200
11229
5.19
6.13E + 12
−43.2
−71.7
482900
|
25&Asteriskpseud;
1200
8654
5.54
5.94E + 12
−40.6
−71.7
464000
|
26&Asteriskpseud;
1200
6543
6.05
1.17E + 13
−42.1
−67.4
455600
|
27&Asteriskpseud;
1200
7698
6.17
6.36E + 12
−40.6
−74.9
86432
|
28
1200
12612
5.52
9.11E + 12
−43.0
−74.9
303200
|
29&Asteriskpseud;
1200
13498
6.48
5.75E + 12
−41.5
−67.3
134242
|
|
Sample numbers marked with &Asteriskpseud; are comparative examples.
|
TABLE 2-2
|
|
capacitance
|
sample
sintering
tanδ
resistivity(Ω · cm) at room
variation(ΔC/ΔC
20
, %)
accelerated
|
number
temperature (° C.)
permittivity
(%)
temperature
−25° C.
+85° C.
life(sec)
|
|
31
1200
13422
6.06
3.56E + 12
−42.2
−72.0
351200
|
32
1200
12846
7.28
6.21E + 12
−40.6
−68.2
362600
|
33
1200
15962
8.28
2,13E + 12
−42.9
−72.2
472700
|
34&Asteriskpseud;
1200
11320
12.30
3.81E + 12
−40.9
−67.1
237500
|
35
1200
11439
6.04
1.19E + 13
−43.5
−67.9
358100
|
36&Asteriskpseud;
1200
14038
11.90
8.58E + 12
−43.1
−84.2
494600
|
37
1200
15633
5.45
5.78E + 12
−42.0
−72.3
364400
|
38
1200
13383
5.84
1.11E + 13
−41.7
−70.7
228500
|
39
1200
13750
5.01
9.38E + 12
−44.0
−78.5
294200
|
40
1200
12731
6.14
1.15E + 13
−42.8
−68.8
298700
|
41&Asteriskpseud;
1200
incapable of obtaining a sintered ceramic with high density
|
42&Asteriskpseud;
1200
incapable of obtaining a sintered ceramic with high density
|
43
1200
15648
8.33
1.13E + 13
−41.6
−73.3
484700
|
44
1200
12850
8.91
4.13E + 12
−42.4
−72.7
356900
|
45
1200
14909
8.16
7,33E + 12
−41.8
−76.9
429500
|
46
1200
13518
6.04
4.59E + 12
−40.4
−77.4
390200
|
47
1200
15901
7.74
9.84E + 12
−40.7
−67.3
391700
|
48
1200
11935
6.32
8.41E + 12
−43.1
−74.0
450800
|
49
1200
12972
8.73
1.08E + 13
−43.1
−67.6
433100
|
50
1200
12213
5.08
5.45E + 12
−43.6
−76.5
438200
|
51
1200
14480
7.04
6.96E + 12
−41.3
−70.0
271400
|
52
1200
12133
5.32
3.31E + 12
−41.6
−78.9
353600
|
53
1200
11208
8.76
9.45E + 12
−43.4
−69.1
453500
|
54
1200
11949
7.42
1.14E + 13
−41.2
−77.5
314000
|
55
1200
14032
5.53
8.56E + 12
−40.7
−76.9
374000
|
56
1200
15576
5.28
4.31E + 12
−40.9
−78.2
378800
|
57
1200
14391
8.19
9.71E + 12
−42.2
−73.0
214400
|
58&Asteriskpseud;
1200
23129
16.80
2.38E + 12
−87.9
−67.5
454700
|
|
Sample numbers marked with &Asteriskpseud; are comparative examples.
|
TABLE 2-3
|
|
capacitance
|
sample
sintering
tanδ
resistivity(Ω · cm) at room
variation(ΔC/ΔC
20
, %)
accelerated
|
number
temperature (° C.)
permittivity
(%)
temperature
−25° C.
+85° C.
life(sec)
|
|
59
1200
14382
8.58
7.18E + 12
−41.4
−71.6
473900
|
60
1200
15968
8.96
6.33E + 12
−40.8
−75.2
334100
|
61&Asteriskpseud;
1200
8769
3.80
2.27E + 12
−42.7
−83.9
109886
|
62&Asteriskpseud;
1200
12588
13.10
3.73E + 12
−41.1
−74.0
76432
|
63
1200
13752
5.19
4.84E + 12
−43.1
−68.2
275000
|
64
1200
15777
8.25
9.00E + 12
−41.2
−69.3
430400
|
65
1200
12670
6.18
5.67E + 12
−42.9
−70.2
335000
|
66&Asteriskpseud;
1200
8438
5.81
9.13E + 12
−42.5
−78.8
5326
|
67&Asteriskpseud;
1200
incapable of obtaining a sintered ceramic with high density
|
68
1200
12238
8.24
9.18E + 12
−40.2
−70.4
218600
|
69
1200
11588
7.84
8.62E + 12
−43.0
−69.3
220100
|
70
1200
15311
6.23
6.42E + 12
−40.1
−70.7
209000
|
71&Asteriskpseud;
1200
5988
4.10
6.84E + 12
−40.6
−76.4
7621
|
72&Asteriskpseud;
1200
incapable of obtaining a sintered ceramic with high density
|
73
1200
15494
7.95
4.80E + 12
−42.6
−75.9
478400
|
74
1200
11922
7.28
6.91E + 12
−41.4
−67.8
339800
|
75&Asteriskpseud;
1200
incapable of obtaining a sintered ceramic with high density
|
76
1200
15650
5.88
3.79E + 12
−42.5
−75.5
446600
|
77
1200
12793
8.01
1.04E + 13
−41.7
−73.5
458600
|
78
1200
13733
5.53
5.32E + 12
−42.2
−70.5
341000
|
79&Asteriskpseud;
1200
incapable of obtaining a sintered ceramic with high density
|
80
1200
12016
5.22
2.37E + 12
−42.1
−68.3
443000
|
81
1200
14720
5.58
8.02E + 12
−41.9
−68.7
223100
|
82&Asteriskpseud;
1200
incapable of obtaining a sintered ceramic with high density
|
83
1200
12815
8.75
5.99E + 12
−40.6
−77.5
435800
|
|
Sample numbers marked with &Asteriskpseud; are comparative examples.
|
TABLE 2-4
|
|
capacitance
|
sample
sintering
tanδ
resistivity(Ω · cm) at room
variation(ΔC/ΔC
20
, %)
accelerated
|
number
temperature (° C.)
permittivity
(%)
temperature
−25° C.
+85° C.
life(sec)
|
|
84&Asteriskpseud;
1200
15453
8.20
9.87E + 12
−40.3
−78.5
7534
|
85&Asteriskpseud;
1200
11309
7.97
7.07E + 12
−42.3
−74.6
24546
|
86&Asteriskpseud;
1200
13496
7.36
2.21E + 12
−41.4
−77.7
6435
|
87
1200
15088
7.02
4.57E + 12
−40.6
−71.4
461900
|
88
1200
14189
7.26
9.36E + 12
−42.3
−72.4
261800
|
89
1200
15832
7.01
1.18E + 13
−41.4
−79.0
451700
|
90
1200
14417
6.16
7.57E + 12
−42.8
−67.7
239900
|
91
1200
14733
5.92
1.00E + 13
−40.6
−73.0
469400
|
92
1200
14194
7.84
2.06E + 12
−43.7
−71.0
374000
|
93
1200
14177
6.43
4.81E + 12
−43.5
−67.1
412400
|
94
1200
15779
5.68
4.99E + 12
−40.3
−71.6
366500
|
95
1200
14209
8.93
1.18E + 13
−43.6
−73.5
376700
|
96
1200
14727
8.85
1.18E + 13
−41.4
−67.7
366800
|
97
1200
12523
7.34
8.38E + 12
−40.3
−72.4
247000
|
98
1200
11089
8.54
7.97E + 12
−40.2
−71.9
348500
|
99
1200
13442
7.80
2.54E + 12
−43.5
−68.5
256700
|
100
1200
15667
6.21
7.94E + 12
−42.2
−77.4
486500
|
101
1200
12847
8.47
3.12E + 12
−40.2
−68.2
407000
|
102
1200
12266
8.72
3.59E + 12
−43.5
−75.8
427400
|
103
1200
14965
8.79
8.53E + 12
−43.8
−69.0
362600
|
104
1200
12794
8.60
9.62E + 12
−41.1
−78.8
292100
|
105
1200
13163
7.96
1.13E + 13
−43.4
−72.9
315200
|
106
1200
12545
6.63
6.17E + 12
−41.9
−75.7
417800
|
107
1200
11027
5.57
6.52E + 12
−42.9
−67.6
255200
|
108&Asteriskpseud;
1200
7259
5.12
4.80E + 12
−40.1
−73.7
235700
|
109&Asteriskpseud;
1200
6439
3.53
5.37E + 12
−41.5
−70.8
369500
|
110&Asteriskpseud;
1200
2543
2.76
4.09E + 12
−41.5
−70.3
43455
|
|
Sample numbers marked with &Asteriskpseud; are comparative examples.
|
TABLE 2-5
|
|
capacitance
|
sample
sintering
tanδ
resistivity(Ω · cm) at room
variation(ΔC/ΔC
20
, %)
accelerated
|
number
temperature(° C.)
permittivity
(%)
temperature
−25° C.
+85° C.
life(sec)
|
|
111&Asteriskpseud;
1200
incapable of obtaining a sintered ceramic with high density
|
112
1200
11542
5.28
7.42E + 12
−43.5
−76.0
342500
|
113
1200
12319
5.78
1.15E + 13
−40.5
−71.2
455900
|
114
1200
15522
8.16
8.41E + 12
−40.1
−76.5
382100
|
115&Asteriskpseud;
1200
8134
2.88
5.08E + 12
−42.6
−72.9
25442
|
116&Asteriskpseud;
1200
18751
6.19
5.44E + 12
−40.6
−89.4
43676
|
117
1200
14498
7.00
1.01E + 13
−43.8
−67.3
291200
|
118
1200
15720
7.15
1.15E + 13
−41.0
−70.1
409700
|
119
1200
11067
6.45
5.03E + 12
−43.7
−70.9
377300
|
120
1200
14148
5.95
1.10E + 13
−40.5
−72.2
353900
|
121
1200
14509
6.22
2.45E + 12
−41.0
−76.7
410900
|
122&Asteriskpseud;
1200
20862
12.40
1.11E + 13
−86.3
−43.8
406100
|
123&Asteriskpseud;
1200
13545
8.80
4.33E + 12
−42.1
−70.7
36532
|
124
1200
14716
5.59
5.64E + 12
−43.0
−68.7
337100
|
125
1200
11704
7.24
5.09E + 12
−43.1
−73.8
315200
|
126
1200
12301
8.39
1.01E + 13
−42.8
−68.9
363200
|
127
1200
15933
8.23
5.32E + 12
−41.7
−72.9
239900
|
128
1200
13212
8.17
5.92E + 12
−43.3
−71.0
492500
|
129
1200
13096
8.58
6.45E + 12
−40.8
−71.4
244700
|
130
1200
11101
8.51
4.01E + 12
−42.0
−77.5
266000
|
131&Asteriskpseud;
1200
23786
15.80
2.27E + 12
−82.0
−41.9
223700
|
132
1200
11292
5.65
4.01E + 12
−43.6
−77.6
401600
|
133
1200
11672
8.67
1.10E + 13
−42.1
−68.2
361400
|
134
1200
12236
7.80
1.14E + 13
−42.6
−71.2
489500
|
135
1200
11682
8.57
1.11E + 13
−42.4
−77.9
411500
|
136
1200
11435
5.34
5.26E + 12
−43.0
−71.1
486800
|
137&Asteriskpseud;
1200
28765
17.30
9.26E + 12
−43.1
−67.4
274100
|
|
Sample numbers marked with &Asteriskpseud; are comparative examples.
|
TABLE 2-6
|
|
capacitance
|
sample
sintering
tanδ
resistivity(Ω · cm) at room
variation(ΔC/ΔC
20
, %)
accelerated
|
number
temperature(° C.)
permittivity
(%)
temperature
−25° C.
+85° C.
life(sec)
|
|
138&Asteriskpseud;
1200
incapable of obtaining a sintered ceramic with high density
|
139
1200
14744
8.85
6.46E + 12
−42.3
−76.7
394400
|
140
1200
12027
8.98
6.66E + 12
−42.4
−69.7
276500
|
141
1200
13352
6.43
1.19E + 13
−40.4
−68.5
467900
|
142&Asteriskpseud;
1200
incapable of obtaining a sintered ceramic with high density
|
143&Asteriskpseud;
1200
7612
2.98
8.92E + 12
−42.5
−74.4
2362
|
144
1200
11359
8.96
5.98E + 12
−41.8
−68.7
458000
|
145
1200
11423
8.81
6.07E + 12
−43.9
−70.3
331400
|
146&Asteriskpseud;
1200
incapable of obtaining a sintered ceramic with high density
|
147
1200
12283
7.34
2.04E + 12
−41.2
−78.6
209600
|
148
1200
13395
8.17
7.14E + 12
−40.9
−68.3
264500
|
149
1200
13730
5.70
6.00E + 12
−43.0
−76.4
372500
|
150&Asteriskpseud;
1200
incapable of obtaining a sintered ceramic with high density
|
151
1200
15706
5.27
3.93E + 12
−41.2
−72.4
283400
|
152
1200
13012
8.55
8.39E + 12
−43.0
−71.3
360200
|
153&Asteriskpseud;
1200
incapable of obtaining a sintered ceramic with high density
|
154
1200
14940
7.43
6.34E + 12
−40.5
−67.4
380300
|
155&Asteriskpseud;
1200
16485
5.68
8.84E + 12
−43.3
−68.6
12083
|
156
1200
14274
7.39
5.67E + 12
−40.5
−78.0
250700
|
157
1200
12831
6.37
5.09E + 12
−43.9
−74.0
431300
|
158
1200
12802
7.68
9.38E + 12
−41.7
−70.1
362300
|
159&Asteriskpseud;
1200
7524
8.39
7.21E + 12
−40.3
−72.7
344000
|
|
Sample numbers marked with &Asteriskpseud; are comparative examples.
|
Claims
- 1. A dielectric ceramic composition comprising:100 mol % of an oxide of Ba, Ti and Zr, the content of the oxide of the Ba, Ti and Zr being calculated by assuming that the oxide thereof is Ba(Ti1−xZrx)O3; 0.25 to 1.5 mol % of an oxide of Re, Re representing one or more elements selected from the group consisting of Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Y, the content of the oxide of the Re being calculated by assuming that the oxide thereof is Re2O3; 0.1 to 0.4 mol % of an oxide of Mg, the content of the oxide of the Mg being calculated by assuming that the oxide thereof is MgO; 0.03 to 0.6 mol % of oxides of one or more elements selected from the group consisting of Mn, V and Cr, the contents of the oxides of the Mn, V and Cr being calculated by assuming that the oxides thereof are Mn2O3, V2O5 and Cr2O3, respectively; 0.02 to 0.3 mol % of oxides of one or two elements of Mo and W, the contents of the oxides of Mo and W being calculated by assuming that the oxides thereof Mo3O3, WO3, respectively; and a glass component including SiO2, wherein x in the oxide of Ba(Ti1−xZrx)O3 ranges from about 0.05 to about 0.26.
- 2. The dielectric ceramic composition of claim 1, wherein the glass component is composed of Li2O—BaO—TiO2—SiO2 and the content thereof ranges from 0.05 to 1.0 wt %.
- 3. The dielectric ceramic composition of claim 1, wherein the glass component is composed of B2O3—SiO2—MO, MO representing one or more oxides selected from the group consisting of BaO, SrO, CaO, MgO and ZnO, and wherein a composition of B2O3—SiO2—MO is within a range surrounded by 6 lines formed by cyclically connecting 6 points A, B, C, D, E and F in that order in a triangular composition diagram exhibiting compositional amounts of B2O3, SiO2 and Mo in a unit of mol %, and wherein a point A represents a composition including 1 mol % of B2O3, 80 mol % of SiO2 and 19 mol % of MO, a point B represents a composition including 1 mol % of B2O3, 39 mol % of SiO2 and 60 mol % of MO, a point C represents a composition including 29 mol % of B2O3, 1 mol % of SiO2 and 70 mol % of MO, a point D represents a composition including 90 mol % of B2O3, 1 mol % of SiO2 and 9 mol % of MO, a point E represents a composition including 90 mol % of B2O3, 9 mol % of SiO2 and 1 mol % of MO and a point F represents a composition including 19 mol % of B2O3, 80 mol % of SiO2 and 1 mol % of MO, a content of the composition B2O3—SiO2—MO ranging from 0.05 to 5.0 wt %.
- 4. The dielectric ceramic composition of claim 1, wherein the glass component is substantially composed of SiO2 and a content thereof is 0.20 to 4.0 mol %.
- 5. The dielectric ceramic composition of claim 1, wherein the glass component is composed of Li2O—SiO2—MO, MO representing one or more oxides selected from the group consisting of BaO, SrO, CaO, MgO and ZnO, and wherein the composition of Li2O—SiO2—MO is within a range surrounded by 6 lines formed by cyclically connecting 6 points G, H, I, J, K and L in that order in a triangular composition diagram showing compositional amounts of Li2O, SiO2 and MO in a unit of mol %, and wherein a point G represents a composition including 1 mol % of Li2O, 94 mol % of SiO2 and 5 mol % of MO, a point H represents a composition including 1 mol % of Li2O, 19 mol % of SiO2 and 80 mol % of MO, a point I represents a composition including 19 mol % of Li2O, 1 mol % of SiO2 and 80 mol % of MO, a point J represents a composition including 89 mol % of Li2O, 1 mol % of SiO2 and 10 mol % of MO, a point K represents a composition including 90 mol % of Li2O3, 9 mol % of SiO2 and 1 mol % of MO and a point L represents a composition including 5 mol % of Li2O, 94 mol % of SiO2 and 1 mol % of MO, a content of the composition Li2O—SiO2—MO ranging from 0.05 to 5.0 wt %.
- 6. The dielectric ceramic composition of claim 1, further comprising one or more oxides selected from the group consisting of oxides of Fe, Ni and Cu and wherein a total content of oxides of Fe, Ni, Cu, Mn, V and Cr is 0.04 to 1.0 mol %, the total content being calculated by assuming that the oxides of Fe, Ni, Cu, Mn, V and Cr are FeO, NiO, CuO, Mn2O3, V2O5 and Cr2O3, respectively.
- 7. A ceramic capacitor comprising one or more dielectric layers made of the dielectric ceramic composition of claim 1.
- 8. The ceramic capacitor of claim 7, wherein the glass component is composed of Li2O—BaO—TiO2—SiO2 and the content thereof ranges from 0.05 to 1.0 wt %.
- 9. The ceramic capacitor of claim 7, wherein the glass component is composed of B2O3—SiO2—MO, MO representing one or more oxides selected from the group consisting of BaO, SrO, CaO, MgO and ZnO, and wherein a composition of B2O3—SiO2—MO is within a range surrounded by 6 lines formed by cyclically connecting 6 points A, B, C, D, E and F in that order in a triangular composition diagram exhibiting compositional amounts of B2O3, SiO2 and Mo in a unit of mol %, and wherein a point A represents a composition including 1 mol % of B2O3, 80 mol % of SiO2 and 19 mol % of MO, a point B represents a composition including 1 mol % of B2O3, 39 mol % of SiO2 and 60 mol % of MO, a point C represents a composition including 29 mol % of B2O3, 1 mol % of SiO2 and 70 mol % of MO, a point D represents a composition including 90 mol % of B2O3, 1 mol % of SiO2 and 9 mol % of MO, a point E represents a composition including 90 mol % of B2O3, 9 mol % of SiO2 and 1 mol % of MO and a point F represents a composition including 19 mol % of B2O3, 80 mol % of SiO2 and 1 mol % of MO, a content of the composition B2O3—SiO2—MO ranging from 0.05 to 5.0 wt %.
- 10. The ceramic capacitor of claim 7, wherein the glass component is substantially composed of SiO2 and a content thereof is 0.20 to 4.0 mol %.
- 11. The ceramic capacitor of claim 7, wherein the glass component is composed of Li2O—SiO2—MO, MO representing one or more oxides selected from the group consisting of BaO, SrO, CaO, MgO and ZnO, and wherein the composition of Li2O—SiO2—MO is within a range surrounded by 6 lines formed by cyclically connecting 6 points G, H, I, J, K and L in that order in a triangular composition diagram showing compositional amounts of Li2O, SiO2 and MO in a unit of mol %, and wherein a point G represents a composition including 1 mol % of Li2O, 94 mol % of SiO2 and 5 mol % of MO, a point H represents a composition including 1 mol % of Li2O, 19 mol % of SiO2 and 80 mol % of MO, a point I represents a composition including 19 mol % of Li2O, 1 mol % of SiO2 and 80 mol % of MO, a point J represents a composition including 89 mol % of Li2O, 1 mol % of SiO2 and 10 mol % of MO, a point K represents a composition including 90 mol % of Li2O3, 9 mol % of SiO2 and 1 mol % of MO and a point L represents a composition including 5 mol % of Li2O, 94 mol % of SiO2 and 1 mol % of MO, a content of the composition Li2O—SiO2—MO ranging from 0.05 to 5.0 wt %.
- 12. The ceramic capacitor of claim 7, wherein the dielectric ceramic composition further comprises one or more oxides selected from the group consisting of oxides of Fe, Ni and Cu and wherein a total content of oxides of Fe, Ni, Cu, Mn, V and Cr is 0.04 to 1.0 mol %, the total content being calculated by assuming that the oxides of Fe, Ni, Cu, Mn, V and Cr are FeO, NiO, CuO, Mn2O3, V2O5 and Cr2O3, respectively.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2001-105329 |
Apr 2001 |
JP |
|
US Referenced Citations (3)
Number |
Name |
Date |
Kind |
5742473 |
Sano et al. |
Apr 1998 |
A |
6437969 |
Mizuno et al. |
Aug 2002 |
B2 |
6510039 |
Morita et al. |
Jan 2003 |
B1 |