Claims
- 1. A method for fabricating a dielectric element, comprising:(I) forming an Ru layer on a substrate; (II) forming a photoresist layer on the Ru layer; (III) selectively exposing the photoresist layer, and forming a photoresist pattern as a mask on the Ru layer; (IV) forming a Pt layer, which is to be a lower electrode, on an exposed or unmasked area of the Ru layer by electroplating using a Pt plating solution utilizing the Ru layer as an electroplating electrode; (V) removing the photoresist pattern and the Ru layer provided thereunder; (VI) forming a dielectric layer on the Pt layer; and (VII) forming a conductive layer, which is to be an upper electrode, on the dielectric layer.
- 2. The method for fabricating a dielectric element according to claim 1, wherein the conductive layer (upper electrode) in the step (VII) is a Pt layer.
- 3. The method for fabricating a dielectric element according to claim 2, wherein the Pt layer is formed by an electroplating method.
- 4. A method for fabricating a dielectric element, comprising:(I) forming a conductive layer, which is to be a lower electrode, on a substrate; (II) forming a dielectric layer on the conductive layer; (III) forming an Ru layer on the dielectric layer; (IV) forming a photoresist layer on the Ru layer; (V) selectively exposing the photoresist layer, and forming a photoresist pattern as a mask on the Ru layer; (VI) forming a Pt layer, which is to be an upper electrode, on an exposed or unmasked area of the Ru layer by electroplating using a Pt plating solution utilizing the Ru layer as an electroplating electrode; and (VII) removing the photoresist pattern and the Ru layer provided thereunder.
- 5. The method for fabricating a dielectric element according to claim 4, wherein the conductive layer (lower electrode) in the step (I) is a Pt layer.
- 6. The method for fabricating a dielectric element according to claim 5, wherein the Pt layer is formed by electroplating.
- 7. A method for fabricating a dielectric element, comprising:(I) forming an Ru layer on a substrate; (II) forming a photoresist layer on the Ru layer; (III) selectively exposing the photoresist layer, and forming a photoresist pattern as a mask on the Ru layer; (IV) forming a Pt layer, which is to be a lower electrode, on an exposed or unmasked area of the Ru layer by electroplating using a Pt plating solution utilizing the Ru layer as an electroplating electrode; (V) removing the photoresist pattern and the Ru layer provided thereunder; (VI) forming a dielectric layer on the Pt layer; (VII) forming an Ru layer on the dielectric layer; (VIII) forming a photoresist layer on the Ru layer; (IX) selectively exposing the photoresist layer, and forming a photoresist pattern as a mask on the Ru layer; (X) forming a Pt layer, which is to be an upper electrode, on an exposed or unmasked area of the Ru layer by electroplating using a Pt plating solution utilizing the Ru layer as an electroplating electrode; and (XI) removing the photoresist pattern and the Ru layer provided thereunder.
Priority Claims (1)
Number |
Date |
Country |
Kind |
11-321303 |
Nov 1999 |
JP |
|
Parent Case Info
This is a divisional of Ser. No. 09/709,423, filed Nov. 13, 2000 now U.S. Pat No. 6,597,027.
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Nov 1999 |
A |
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Dec 2000 |
A |
6323081 |
Marsh |
Nov 2001 |
B1 |
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Number |
Date |
Country |
10-335588 |
Dec 1998 |
JP |
1999-27044 |
Apr 1999 |
KR |