Claims
- 1. A system for thermal processing of semiconductors comprising:
- (a) generator means for generating a short duration pulsed electron beam;
- (b) a vacuum chamber;
- (c) transport means for carrying semiconductors into said vacuum chamber;
- (d) dielectric guide means for transporting said electron beam from said generator means to the semiconductors, said dielectric means including an enclosure defining a cavity adapted to have said electron beam injected therein and a sheet of dielectric material disposed within said cavity for interaction with said electron beam injected into said cavity, said cavity disposed within said vacuum chamber, said sheet of dielectric material is a thin stratum disposed about the boundary of said cavity and defines a surface of revolution which is spaced apart from the surface of said enclosure, said dielectric material interacting with said electron beam and establishing a focusing action for guiding said electron beam from said generator means through said enclosure towards the semiconductors to be processed.
- 2. The system as claimed in claim 1 wherein said enclosure defines a cylindrical cavity having a diameter/length aspect ratio of approximatey 1.5.
- 3. The system as claimed in claim 2 wherein said dielectric is in the form of thin stratum that is disposed about the boundary of said cavity.
- 4. A system for thermal processing of semiconductors comprising:
- (a) generator means for generating an electron beam; and
- (b) dielectric guide means for transporting said electron beam from said generator means to the semiconductors, said dielectric means including an enclosure defining a cavity adapted to have said electron beam injected therein and a sheet of dielectric material disposed within said cavity for interaction with said electron beam injected into said cavity, said dielectric material defining a surface of revolution within said cavity, said dielectric material interacting with said electron beam and establishing a focusing action for guiding said electron beam from said generator means through said enclosure towards the semiconductors to be processed.
- 5. The system as claimed in claim 4 wherin said sheet of dielectric material is a thin stratum disposed about the boundary of said cavity.
- 6. A system for thermal processing of semiconductors comprising:
- (a) generator means for generating an electron beam; and
- (b) dielectric guide means for transporting said electron beam from said generator means to the semiconductors, said dielectric means including an enclosure defining a cylindrical cavity adapted to have said electron beam injected therein and a single dielectric rod disposed coaxially with the longitudinal axis of said cavity for interaction with said electron beam injected into said cavity, said dielectric rod interacting with said electron beam and establishing a focusing action for guiding said electron beam from said generator means through said enclosure towards the semiconductors to be processed.
CROSS REFERENCE TO RELATED APPLICATIONS
This is a division of application Ser. No. 548,438, filed on Feb. 10, 1975, now U.S. Pat. No. 4,079,285.
US Referenced Citations (3)
Divisions (1)
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Number |
Date |
Country |
Parent |
548438 |
Feb 1975 |
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