Claims
- 1. A method of etching a dielectric layer, comprising the steps of:
providing a structure having the dielectric layer formed thereover; forming a non-aromatic positive patterned photoresist layer over the dielectric layer; and using the non-aromatic positive patterned photoresist layer as a mask, etching the dielectric layer with an etching gas comprising a fluorocarbon while modulating one or both select powers on and off with a duty cycle or wave form; the select powers selected from the group consisting of: an RF power and a bias power.
- 2. The method of claim 1, wherein an ARC layer is formed over the dielectric layer.
- 3. The method of claim 1, wherein an ARC layer is formed over the dielectric layer; the ARC layer is an organic material, oxynitride, nitride or TiN; the ARC layer having a thickness of from about 200 to 2000 Å.
- 4. The method of claim 1, wherein the structure is a semiconductor structure; the dielectric layer is a low-k material, nitride, oxide, oxynitride, SiN, silicon oxide, SiON, oxide/SiN or SiON/oxide; and the non-aromatic positive patterned photoresist layer is ether, ester, acrylic, fluorocarbon or having a cyclic aliphatic structure.
- 5. The method of claim 1, wherein the dielectric layer has a thickness of from about 500 to 10,000 Å and the non-aromatic positive patterned photoresist has a thickness of from about 0.05 to 0.80 μm.
- 6. The method of claim 1, wherein the etching gas comprising a fluorocarbon comprises a C4F8, C5F8, C4F6, C2F6, CF4, C3F8 or C2F4 fluorocarbon.
- 7. The method of claim 1, wherein the etching gas comprising a fluorocarbon further comprises: O2; and a C4F8, C5F8, C4F6, C2F6, CF4, C3F8 or C2F4 fluorocarbon.
- 8. The method of claim 1, wherein the etching gas comprising a fluorocarbon has a flow rate of from about 5 to 100 sccm.
- 9. The method of claim 1, wherein the etching gas comprising a fluorocarbon further comprises O2; and has an O2 flow rate of from about 1 to 70 sccm and a fluorocarbon flow rate of from about 10 to 100 sccm.
- 10. The method of claim 1, wherein the etching gas comprising a fluorocarbon further comprises O2; and has an O2 flow rate of from about 10 to 30 sccm and has a fluorocarbon flow rate of from about 20 to 40 sccm.
- 11. The method of claim 1, wherein the dielectric layer etching step comprises a hydrogen atom as a plasma species containing gas.
- 12. The method of claim 1, wherein the dielectric layer etching step comprises a hydrogen atom as a plasma species containing gas, the hydrogen atom as a plasma species containing gas having a flow rate of from about 5 to 50 sccm.
- 13. The method of claim 1, wherein the dielectric layer etching step comprises a hydrogen atom as a plasma species containing gas comprised of HBr, CHF3, H2, CH2F2 or CH3F.
- 14. The method of claim 1, wherein the select powers comprise both the RF power and the bias power with the modulation of the RF power and the bias power being independently controlled; the RF power being from about 10 to 60 MHz; and the bias power being from about 2 to 20 MHz.
- 15. The method of claim 1, wherein the dielectric layer etching step does not cause tilting of the non-aromatic positive patterned photoresist layer.
- 16. A method of etching a dielectric layer, comprising the steps of:
providing a structure having the dielectric layer formed thereover; forming a non-aromatic patterned non-aromatic photoresist layer over the dielectric layer; and using the patterned non-aromatic photoresist layer as a mask, etching the dielectric layer with an etching gas comprising a fluorocarbon and O2 while modulating one or both select powers on and off with a duty cycle or wave form; the select powers selected from the group consisting of: an RF power and a bias power.
- 17. The method of claim 16, wherein an ARC layer is formed over the dielectric layer.
- 18. The method of claim 16, wherein an ARC layer is formed over the dielectric layer; the ARC layer is an organic material, oxynitride, nitride or TiN; the ARC layer having a thickness of from about 200 to 2000 Å.
- 19. The method of claim 16, wherein the structure is a semiconductor structure; the dielectric layer is a low-k material, nitride, oxide, oxynitride, SiN, silicon oxide, SiON, oxide/SiN or SiON/oxide; and the patterned non-aromatic photoresist layer is:
a non-aromatic negative photoresist material comprised of acrylate polymer, cyclic olefin polymer, fluoro polymer, silicon polymer or cyano polymer; or a non-aromatic positive photoresist material comprised of ether, ester, acrylic, fluorocarbon or a cyclic aliphatic structure.
- 20. The method of claim 16, wherein the structure is a semiconductor structure; the dielectric layer is a low-k material, nitride, oxide, oxynitride, SiN, silicon oxide, SiON, oxide/SiN or SiON/oxide; and the patterned photoresist layer is a:
non-aromatic negative photoresist material comprised of acrylate polymer or cyclic olefin polymer; or a non-aromatic positive photoresist material comprised of ether, ester, acrylic, fluorocarbon or a cyclic aliphatic structure.
- 21. The method of claim 16, wherein the dielectric layer has a thickness of from about 500 to 10,000 Å and the patterned non-aromatic photoresist has a thickness of from about 0.05 to 0.80 μm.
- 22. The method of claim 16, wherein the etching gas comprising a fluorocarbon and O2 comprises O2 and a fluorocarbon comprised of C4F8, C5F8, C4F6, C2F6, CF4, C3F8 or C2F4.
- 23. The method of claim 16, wherein the etching gas comprising a fluorocarbon and O2 comprises O2 and a fluorocarbon comprised of C2F6, CF4 or C4F8.
- 24. The method of claim 16, wherein the etching gas comprising a fluorocarbon and O2 has a fluorocarbon flow rate of from about 5 to 100 sccm.
- 25. The method of claim 16, wherein the etching gas comprising a fluorocarbon and O2 has a fluorocarbon flow rate of from about 10 to 100 sccm, and an O2 flow rate of from about 1 to 70 sccm.
- 26. The method of claim 16, wherein the etching gas comprising a fluorocarbon and O2 has a fluorocarbon flow rate of from about 20 to 40 sccm, and an O2 flow rate of from about 10 to 30 sccm.
- 27. The method of claim 16, wherein the dielectric layer etching step comprises a hydrogen atom as a plasma species containing gas; the RF power being from about 10 to 60 MHz; and the bias power being from about 2 to 20 MHz.
- 28. The method of claim 16, wherein the dielectric layer etching step comprises a hydrogen atom as a plasma species containing gas and has a flow rate of from about 5 to 50 sccm.
- 29. The method of claim 16, wherein the dielectric layer etching step comprises a hydrogen atom as a plasma species containing gas is HBr, CHF3, H2, CH2F2 or CH3F.
- 30. The method of claim 16, wherein the select powers comprise both the RF power and the bias power with the modulation of the RF power and the bias power being independently controlled.
- 31. The method of claim 16, wherein the dielectric layer etching step does not cause tilting of the patterned non-aromatic photoresist layer.
- 32. A method of etching a dielectric layer, comprising the steps of:
providing a structure having the dielectric layer formed thereover; forming an ARC layer over the dielectric layer; forming a non-aromatic positive patterned non-aromatic photoresist layer over the dielectric layer; and using the patterned non-aromatic positive photoresist layer as a mask, etching the ARC layer and the dielectric layer with an etching gas comprising a fluorocarbon and O2 while modulating one or both select powers on and off with a duty cycle or wave form; the select powers being an RF power or a bias power; the dielectric layer etching step comprising a hydrogen atom as a plasma species containing gas; the RF power being from about 10 to 60 MHz; and the bias power being from about 2 to 20 MHz.
- 33. The method of claim 32, wherein the ARC layer is an organic material, oxynitride, nitride or TiN; the ARC layer having a thickness of from about 200 to 2000 Å.
- 34. The method of claim 32, wherein the structure is a semiconductor structure; the dielectric layer is a low-k material, nitride, oxide, oxynitride, SiN, silicon oxide, SiON, oxide/SiN or SiON/oxide; the ARC layer is an organic material, oxynitride, nitride or TiN; and the patterned non-aromatic positive photoresist layer is a ether, ester, acrylic, fluorocarbon or a cyclic aliphatic structure.
- 35. The method of claim 32, wherein the dielectric layer has a thickness of from about 500 to 10,000 Å; the ARC layer has a thickness of from about 200 to 2000 Å; and the patterned non-aromatic positive photoresist has a thickness of from about 0.05 to 0.80 μm.
- 36. The method of claim 32, wherein the etching gas comprising a fluorocarbon and O2 comprises O2 and a C4F8, C5F8, C4F6, C2F6, CF4, C3F8 or C2F4 fluorocarbon.
- 37. The method of claim 32, wherein the etching gas comprising a fluorocarbon and O2 has a fluorocarbon flow rate of from about 10 to 100 sccm and an O2 flow rate of from about 1 to 70 sccm.
- 38. The method of claim 32, wherein the etching gas comprising a fluorocarbon and O2 has a fluorocarbon flow rate of from about 20 to 40 sccm and an O2 flow rate of from about 10 to 30 sccm.
- 39. The method of claim 32, wherein the hydrogen atom as a plasma species containing gas having a flow rate of from about 5 to 50 sccm.
- 40. The method of claim 32, wherein the hydrogen atom as a plasma species containing gas is HBr, CHF3, H2, CH2F2 or CH3F.
- 41. The method of claim 32, wherein the select power comprises both the RF power and the bias power with the modulation of the RF power and the bias power being independently controlled.
- 42. The method of claim 32, wherein the dielectric layer etching step does not cause tilting of the patterned non-aromatic positive photoresist layer.
Parent Case Info
[0001] This Patent Application is a Continuation-in-Part of attorney docket number TSMC 01-189, filed as U.S. patent application Ser. No. 09/953523, filed on Sep. 17, 2001, which is hereby incorporated by reference in its entirety.
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
09953523 |
Sep 2001 |
US |
Child |
10889749 |
Jul 2004 |
US |