by dry-etching

Industry

CPC
H01L21/31116

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/31116by dry-etching

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Manufacturing method of memory device using mask patterns
- Patent number 12,249,516
- Issue date Mar 11, 2025
- SK hynix Inc.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon based depositions used for critical dimension control during...
- Patent number 12,249,514
- Issue date Mar 11, 2025
- Lam Research Corporation
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching method and etching apparatus
- Patent number 12,249,515
- Issue date Mar 11, 2025
- Tokyo Electron Limited
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection structures for bonded wafers
- Patent number 12,243,772
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ssu-Chiang Weng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having buried word lines and method of manu...
- Patent number 12,245,416
- Issue date Mar 4, 2025
- NANYA TECHNOLOGY CORPORATION
- Min-Chung Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems for etching a substrate using a hybrid wet atomic layer etc...
- Patent number 12,243,752
- Issue date Mar 4, 2025
- Tokyo Electron Limited
- Paul Abel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas curtain for semiconductor manufacturing system
- Patent number 12,243,750
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kent Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having STI region
- Patent number 12,238,924
- Issue date Feb 25, 2025
- Micron Technology, Inc.
- Kunihiro Tsubomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device
- Patent number 12,237,214
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Nien Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for increasing germanium concentration of surfaces of a sil...
- Patent number 12,237,404
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma processing assembly using pulsed-voltage and radio-frequency...
- Patent number 12,237,148
- Issue date Feb 25, 2025
- Applied Materials, Inc.
- Leonid Dorf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch process for oxide of alkaline earth metal
- Patent number 12,237,172
- Issue date Feb 25, 2025
- Tokyo Electron Limited
- Du Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate processing method, substrate processing apparatus and sub...
- Patent number 12,237,173
- Issue date Feb 25, 2025
- Tokyo Electron Limited
- Keiko Hada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polymerization protective liner for reactive ion etch in patterning
- Patent number 12,237,175
- Issue date Feb 25, 2025
- Lam Research Corporation
- Bhaskar Nagabhirava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation structures having uniform step heights
- Patent number 12,237,229
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- I-Sheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor devices
- Patent number 12,237,402
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound, polymer, pattern forming material, pattern forming method...
- Patent number 12,228,860
- Issue date Feb 18, 2025
- Kioxia Corporation
- Norikatsu Sasao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching apparatus
- Patent number 12,230,505
- Issue date Feb 18, 2025
- Tokyo Electron Limited
- Akihiro Tsuji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma etching method and plasma etching apparatus
- Patent number 12,230,504
- Issue date Feb 18, 2025
- Kioxia Corporation
- Junji Kataoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of running an etch process in higher selectivity to mask and...
- Patent number 12,224,177
- Issue date Feb 11, 2025
- American Air Liquide, Inc.
- Xiangyu Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing vias with pulsing plasma
- Patent number 12,224,178
- Issue date Feb 11, 2025
- NANYA TECHNOLOGY CORPORATION
- Zhi-Xuan Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor structure
- Patent number 12,222,653
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Hui Weng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for FinFet fabrication and structure thereof
- Patent number 12,224,210
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Han-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT and fabricating method of the same
- Patent number 12,224,338
- Issue date Feb 11, 2025
- United Microelectronics Corp.
- Huai-Tzu Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of metal grid, thin film sensor and manufactur...
- Patent number 12,224,234
- Issue date Feb 11, 2025
- BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD.
- Hu Meng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the semiconductor...
- Patent number 12,218,247
- Issue date Feb 4, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor manufacturing system, method of manufacturing a semic...
- Patent number 12,217,962
- Issue date Feb 4, 2025
- Kioxia Corporation
- Shingo Honda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma etching method using perfluoropropyl carbinol
- Patent number 12,217,970
- Issue date Feb 4, 2025
- Ajou University Industry-Academic Cooperation Foundation
- Chang-Koo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer structure for semiconductor device
- Patent number 12,218,219
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jung-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of etching film and plasma processing apparatus
- Patent number 12,217,973
- Issue date Feb 4, 2025
- Tokyo Electron Limited
- Kosuke Ogasawara
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LAMINATED SUBSTRATE, MANUFACTURING METHOD THEREFOR, AND LIQUID DISC...
- Publication number 20250074054
- Publication date Mar 6, 2025
- Canon Kabushiki Kaisha
- YUKI KOMORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC PLASMA ETCHING USING C2H2F2
- Publication number 20250079127
- Publication date Mar 6, 2025
- L'air Liquide, Societe Anonyme Pour L'Etude et L'Exploitation Des Procedes Ge...
- Nathan STAFFORD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Extreme Ultraviolet (EUV) Resist Patterning Development
- Publication number 20250076771
- Publication date Mar 6, 2025
- TOKYO ELECTRON LIMITED
- Yun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO SELECTIVELY ETCH SILICON NITRIDE TO SILICON OXIDE USING S...
- Publication number 20250079181
- Publication date Mar 6, 2025
- TOKYO ELECTRON LIMITED
- Paul Abel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20250081498
- Publication date Mar 6, 2025
- United Semiconductor (Xiamen) Co., Ltd.
- Jun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA PROCESSING METHOD AND PLASMA PROCESSING SYSTEM
- Publication number 20250079173
- Publication date Mar 6, 2025
- TOKYO ELECTRON LIMITED
- Daisuke YOSHIKOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYOGENIC PLASMA ETCHING USING C2H2F2
- Publication number 20250079183
- Publication date Mar 6, 2025
- L'air Liquide, Societe Anonyme Pour L'Etude et L'Exploitation Des Procedes Ge...
- Nathan STAFFORD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PLASMA PROCESSING
- Publication number 20250069852
- Publication date Feb 27, 2025
- TOKYO ELECTRON LIMITED
- Justin Moses
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
- Publication number 20250069893
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsu Ming HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF SELECTIVELY ETCHING SILICON NITRIDE
- Publication number 20250069894
- Publication date Feb 27, 2025
- Applied Materials Inc.
- Doreen Wei Ying Yong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Etch Selectivity Modulation by Fluorocarbon Treatment
- Publication number 20250069896
- Publication date Feb 27, 2025
- TOKYO ELECTRON LIMITED
- Ivo Otto IV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE
- Publication number 20250072221
- Publication date Feb 27, 2025
- United Microelectronics Corp.
- Shin-Hung LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING SAME
- Publication number 20250071977
- Publication date Feb 27, 2025
- CXMT Corporation
- Yexiao YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA PROCESSING METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE
- Publication number 20250069860
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lun KE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF ETCHING SILICON-AND-OXYGEN-CONTAINING FEATURES AT LOW TE...
- Publication number 20250069895
- Publication date Feb 27, 2025
- Applied Materials, Inc.
- Anatoli Chlenov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE PASSIVATION AND SELECTIVE DEPOSITION
- Publication number 20250069885
- Publication date Feb 27, 2025
- ASM IP HOLDING B.V.
- Eva E. Tois
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR MANUFACTURING...
- Publication number 20250069935
- Publication date Feb 27, 2025
- KIOXIA Corporation
- Wu LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF ETCHING OXYGEN-CONTAINING FEATURES AT LOW TEMPERATURES
- Publication number 20250054770
- Publication date Feb 13, 2025
- Applied Materials, Inc.
- Jiajing Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING METHOD
- Publication number 20250054731
- Publication date Feb 13, 2025
- ULVAC, Inc.
- Kazuhiko Tonari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULLY SELF-ALIGNED VIA WITH GRAPHENE CAP
- Publication number 20250054809
- Publication date Feb 13, 2025
- TOKYO ELECTRON LIMITED
- Kandabara Tapily
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIAMOND-LIKE CARBON GAP FILL
- Publication number 20250046599
- Publication date Feb 6, 2025
- Applied Materials, Inc.
- Jialiang WANG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET
- Publication number 20250048670
- Publication date Feb 6, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING METHOD
- Publication number 20250046615
- Publication date Feb 6, 2025
- TOKYO ELECTRON LIMITED
- Takahiro YOKOYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH CONDUCTIVE PASSIVATION LAYERS AND METHOD OF FORMING THE SAME D...
- Publication number 20250046618
- Publication date Feb 6, 2025
- Xiangyu GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA PROCESSING METHOD
- Publication number 20250046620
- Publication date Feb 6, 2025
- Hitachi High-Tech Corporation
- Kenta NAKAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR LATERAL ETCH WITH BOTTOM PASSIVATION
- Publication number 20250046617
- Publication date Feb 6, 2025
- TOKYO ELECTRON LIMITED
- Adam Pranda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER ETCHING PROCESSES
- Publication number 20250037970
- Publication date Jan 30, 2025
- ASM IP HOLDING B.V.
- Tom E. Blomberg
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INTEGRATED CIRCUIT PACKAGES AND METHODS OF FORMING THE SAME
- Publication number 20250031434
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Hung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE-PROCESSING METHOD AND SUBSTRATE-PROCESSING APPARATUS
- Publication number 20250029843
- Publication date Jan 23, 2025
- TOKYO ELECTRON LIMITED
- Hiroto FUJIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECTION STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250029870
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Feng LEE
- H01 - BASIC ELECTRIC ELEMENTS

by dry-etching

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Manufacturing method of memory device using mask patterns

Carbon based depositions used for critical dimension control during...

Etching method and etching apparatus

Protection structures for bonded wafers

Semiconductor structure having buried word lines and method of manu...

Systems for etching a substrate using a hybrid wet atomic layer etc...

Gas curtain for semiconductor manufacturing system

Semiconductor device having STI region

Method of forming a semiconductor device

Methods for increasing germanium concentration of surfaces of a sil...

Plasma processing assembly using pulsed-voltage and radio-frequency...

Etch process for oxide of alkaline earth metal

Substrate processing method, substrate processing apparatus and sub...

Polymerization protective liner for reactive ion etch in patterning

Shallow trench isolation structures having uniform step heights

Methods of forming semiconductor devices

Compound, polymer, pattern forming material, pattern forming method...

Etching apparatus

Plasma etching method and plasma etching apparatus

Method of running an etch process in higher selectivity to mask and...

Method of manufacturing vias with pulsing plasma

Method for forming semiconductor structure

Method for FinFet fabrication and structure thereof

HEMT and fabricating method of the same

Manufacturing method of metal grid, thin film sensor and manufactur...

Semiconductor device and manufacturing method of the semiconductor...

Semiconductor manufacturing system, method of manufacturing a semic...

Plasma etching method using perfluoropropyl carbinol

Spacer structure for semiconductor device

Method of etching film and plasma processing apparatus

Patents Applicationslast 30 patents

LAMINATED SUBSTRATE, MANUFACTURING METHOD THEREFOR, AND LIQUID DISC...

DIELECTRIC PLASMA ETCHING USING C2H2F2

Methods for Extreme Ultraviolet (EUV) Resist Patterning Development

METHOD TO SELECTIVELY ETCH SILICON NITRIDE TO SILICON OXIDE USING S...

SEMICONDUCTOR STRUCTURE

PLASMA PROCESSING METHOD AND PLASMA PROCESSING SYSTEM

CRYOGENIC PLASMA ETCHING USING C2H2F2

METHOD FOR PLASMA PROCESSING

SEMICONDUCTOR DEVICE AND METHODS OF FORMATION

METHODS OF SELECTIVELY ETCHING SILICON NITRIDE

Etch Selectivity Modulation by Fluorocarbon Treatment

MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING SAME

PLASMA PROCESSING METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE

METHODS OF ETCHING SILICON-AND-OXYGEN-CONTAINING FEATURES AT LOW TE...

SELECTIVE PASSIVATION AND SELECTIVE DEPOSITION

SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR MANUFACTURING...

METHODS OF ETCHING OXYGEN-CONTAINING FEATURES AT LOW TEMPERATURES

ETCHING METHOD

FULLY SELF-ALIGNED VIA WITH GRAPHENE CAP

DIAMOND-LIKE CARBON GAP FILL

METHOD FOR PRODUCING A POWER FINFET, AND POWER FINFET

ETCHING METHOD

HIGH CONDUCTIVE PASSIVATION LAYERS AND METHOD OF FORMING THE SAME D...

PLASMA PROCESSING METHOD

METHOD FOR LATERAL ETCH WITH BOTTOM PASSIVATION

ATOMIC LAYER ETCHING PROCESSES

INTEGRATED CIRCUIT PACKAGES AND METHODS OF FORMING THE SAME

SUBSTRATE-PROCESSING METHOD AND SUBSTRATE-PROCESSING APPARATUS

INTERCONNECTION STRUCTURE AND METHOD FOR FORMING THE SAME