Diethylsilane As A Silicon Source In The Deposition Of Metal Silicate Films

Abstract

A method for forming a metal silicate as a high k dielectric in an electronic device, comprising the steps of: providing diethylsilane to a reaction zone; concurrently providing a source of oxygen to the reaction zone; concurrently providing a metal precursor to the reaction zone; reacting the diethylsilane, source of oxygen and metal precursor by chemical vapor deposition to form a metal silicate on a substrate comprising the electronic device. The metal is preferably hafnium, zirconium or mixtures thereof. The dielectric constant of the metal silicate film can be tuned based upon the relative atomic concentration of metal, silicon, and oxygen in the film.

Description

BRIEF DESCRIPTION OF THE DRAWING

FIG. 1 shows the absorbance as a function of Wavenumbers (cm⁻¹) for films deposited from: a zirconium oxide film from Zr(N(CH₂CH₃)₂)₄ alone—V1519; a silicon oxide film from Diethylsilane alone—V1522; and a zirconium silicate film from Zr(N(CH₂CH₃)₂)₄ and Diethylsilane—V1525; in accordance with Table III.

FIG. 2 shows the index of refraction of Hf—Si—O films as a function of the flow rate (sccm) of SiH₂(CH₂CH₃)₂; in accordance with Table V.

DETAILED DESCRIPTION OF THE INVENTION

The present invention is directed to the formation of metal silicates as high k dielectrical for an electronic device. The metal, silicon, and oxygen sources are simultaneously fed to the deposition chamber in a chemical vapor deposition. Among the silicon sources, diethylsilane has been selected in the deposition of metal silicate films in the present invention. The growth rate of the metal silicate is faster than that achieved by atomic layer deposition. Lower carbon contamination in metal silicate films are found as compared with our previously reported and demonstrated process, U.S. Pat. No. 6,537,613 (which is hereby specifically incorporated by reference in their entirety herein), that uses silicon amides as the silicon source. Lower carbon contamination results in higher dielectric constants. Another benefit is that silicon incorporation into these films can be achieved at lower process temperatures as compared with a process that uses silicon amides as the silicon source; the thermal process budget is reduced (and, thus, process cost is reduced). And most importantly, the present invention also shows that the dielectric constant of the metal silicate film can be tuned based upon the atomic concentration of metal, silicon, and oxygen in the film.

A Chemical Vapor Deposition (CVD) system is configured to simultaneously receive metal precursor feed by Direct Liquid Injection (DLI) (converted to vapor before the reaction zone), silicon precursor vapor feed by Vapor Draw, and oxygen reactant gas feed into the reaction zone above the heated substrate. The temperature and pressure of the reaction zone are established; and the precursor vapor and reactant gas flows are established prior to introduction into the reaction zone. A substrate is introduced into the reaction zone and allowed to equilibrate to the temperature and pressure of the reaction zone. The precursor vapor and reactant gas flows are introduced into the reaction zone and are allowed to flow for a time sufficient to grow a metal silicate film.

The operating conditions are: pressure ranging from 0.5 to 2 Torr; substrate temperature ranging from 250° C.-450° C.; DLI vaporizer temperature ranging from 85° C.-95° C.; metal precursor flow rate ranging from 0.05 to 0.1 ml/min; helium carrier gas flow ranging from 100 to 150 sccm (Standard Cubic Centimeters per Minute); silicon precursor flow rate ranging from 5 to 100 sccm; helium dilution gas flow rate ranging from 0 to 50 sccm, residence time ranging from 0.05 to 2 seconds.

WORKING EXAMPLES

The present invention is illustrated in the following examples.

Example 1

Z—Si—O Thin Film From

Reactants used in the Zr—Si—O thin film deposition were:

• • 1) Tetrakis(DiEthylAmino)Zirconium(IV)—TDEAZ, Zr(N(CH₂CH₃)₂)₄;
  • 2) diethylsilane—DES (LTO-410), SiH₂(CH₂CH₃)₂; and
  • 3) oxygen, O₂.

Liquid Tetrakis(DiEthylAmino)Zirconium(IV) was delivered at 0.1 mL per minute to a direct liquid injection system with subsequent a vaporization at a temperature of 90° C. using a helium sweep gas flow of 100 sccm into a manifold that feeds a precursor delivery ring situated below the gas showerhead in a single wafer, cold wall LPCVD reactor. Diethylsilane vapor was simultaneously delivered at 6.3 sccm through a 100 sccm nitrogen Mass Flow Controller (MFC) (equivalent to 18 sccm full scale flow of diethylsilane) into the aforementioned manifold. Flows of oxygen varied between 100 sccm and 150 ccm, were delivered to the showerhead of this reactor. These three flows were simultaneously directed onto a silicon wafer that was maintained at temperatures between 250° C. and 450° C. on a resistively heated wafer pedestal. The reactor chamber pressure was varied between 1 Torr and 1.5 Torr.

Table I shows the process parameters required to deposit a ZrO₂ film from Zr(N(CH₂CH₃)₂)₄ and O₂; “TDEAZ Only”.

Table II shows the process parameters required to deposit a SiO₂ film from SiH₂(CH₂CH₃)₂ and O₂; “DES Only”.

Table III shows the process parameters required to deposit a Zr—Si—O film by simultaneously delivering Zr(N(CH₂CH₃)₂)₄, SiH₂(CH₂CH₃)₂ and O₂ to the reaction chamber; “TDEAZ and DES”.

As shown in Table I, a high deposition rate and high index of refraction were obtained for ZrO₂ film.

As shown in Table II, a relatively lower index of refraction was obtained from SiO₂ film. The deposition rate varied.

Table III indicates a relatively lower deposition rate of the zirconium silicate film. The index of refraction of Zr—Si—O film is much higher than the index of refraction of SiO₂ film, and thus the high dielectric constant k of Zr—Si—O film.

TABLE I
TDEAZ Only
	Wafer						Run	Index		Dep
	Temp	Press	DLI	He Swp	DES	O2	time	of Ref.	Thickness	Rate
Run	(° C.)	(mTorr)	(ml/min)	(sccm)	(sccm)	(sccm)	(min)	n	(Å)	(Å/min)
V1519	296	1000	0.1	100	0	100	2.5	2.146	2618	1047
V1520	316	1000	0.1	100	0	100	1.2	2.143	1857	1592
V1521	277	1000	0.1	100	0	100	3.5	2.092	2412	689

TABLE II
DES Only
	Wafer						Run	Index		Dep
	Temp	Press	DLI	He Swp	DES	O2	time	of Ref.	Thickness	Rate
Run	(° C.)	(mTorr)	(ml/min)	(sccm)	(sccm)	(sccm)	(min)	n	(Å)	(Å/min)
V1522	400	variable	0	0	variable	100	na	1.444	variable	variable

TABLE III
TDEAZ and DES
								Index
	Wafer						Run	of		Dep
	Temp	Press	DLI	He Swp	DES	O2	time	Ref.	Thickness	Rate
Run	(° C.)	(mTorr)	(ml/min)	(sccm)	(sccm)	(sccm)	(min)	n	(Å)	(Å/min)
DES injected through ring
V1525	405	1500	0.1	100	6.3	100	1.5	1.942	923	615
V1526	405	1500	0.1	150	6.3	100	1.5	1.882	931	621
V1527	405	1500	0.1	100	6.3	150	2	1.711	606	303

FIG. 1 shows the individual FTIR spectra of the ZrO₂, SiO₂, and the Zr—Si—O films superimposed on each other. Run V1519 is the spectrum of the ZrO₂ film. The absorbance at 1545 wavenumbers is the indication of a Zr—O—Zr stretch. Run V1522 is the spectrum of the SiO₂ film. The absorbance at 1074 wavenumbers is the characteristic of the Si—O—Si stretch. Run V1525 is the spectrum of the Zr—Si—O film; it exhibits the characteristic peaks of both the individual oxides, and thus indicates the characteristics of a Zr—Si—O film.

Example 2

Hf—Si—O Thin Film From

Similar experiments as shown in Example 1 have been performed for Hf—Si—O thin film. Note that, chemical properties of Hafnium and Zirconium are very similar since they belong to the same group in the periodic table.

Reactants used in the Hf—Si—O thin film deposition were:

• • 1) Tetrakis(DiEthylAmino)Hafnium(IV)—TDEAH, Hf(N(CH₂CH₃)₂)₄;
  • 2) diethylsilane—DES (LTO-410), SiH₂(CH₂CH₃)₂; and
  • 3) oxygen, O₂.

Liquid Tetrakis(DiEthylAmino)Hafnium(IV) was delivered at 0.1 mL per minute to a direct liquid injection system with subsequent a vaporization at a temperature of 90° C. using a helium sweep gas flow of 100 sccm into a manifold that feeds a precursor delivery ring situated below the gas showerhead in a single wafer, cold wall LPCVD reactor. Diethylsilane vapor was simultaneously delivered at 6.3 to 45 sccm through a 500 sccm nitrogen MFC (equivalent to 90 sccm full scale flow of diethylsilane) into the aforementioned manifold. Flows of oxygen varied between 75 sccm and 100 sccm, were delivered to the showerhead of this reactor. These three flows were simultaneously directed onto a silicon wafer that was maintained by heater set point, which was at 650° C. and 700° C., on a resistively heated wafer pedestal. The reactor chamber pressure was varied between 0.5 Torr and 1.5 Torr.

Table IV shows the process parameters required to deposit an HfO₂ film from Hf(N(CH₂CH₃)₂)₄ and O₂; “TDEAH Only”.

TABLE IV
TDEAH Only
							Index
	Wafer			He		Run	of			FTIR
	Temp	Press	DLI	Swp	O2	time	Ref.	Thickness	Dep Rate	Peak
Run	(° C.)	(mTorr)	(ml/min)	(sccm)	(sccm)	(min)	n	(Å)	(Å/min)	(cm−1)
V1541	255	1000	0.1	100	100	5	1.954	784	156.8	1582.6
							1.957	810	162.0	1583
							2.177	891	178.2	2210
V1542	253	1000	0.1	100	100	5	1.959	737	147.4	1574
							1.968	850	170.0	2210
							1.972	918	183.6

Table V shows the process parameters required to deposit a Hf—Si—O film by simultaneously delivering Hf(N(CH₂CH₃)₂)₄, SiH₂(CH₂CH₃)₂ and O₂ to the reaction chamber; “TDEAH and DES”.

Again, as for the Zi—Si—O films, Table IV indicates that the index of refraction of Hf—Si—O film is much higher than the index of refraction of SiO₂ film, and thus the high dielectric constant k of Hf—Si—O film.

Most importantly, Table V also indicates that the index of refraction of Hf—Si—O films vary with the relative concentration (represented by the flow rates) of hafnium, silicon, and oxygen used in the CVD process.

As an example, FIG. 2 shows the index of refraction of Hf—Si—O films as a function of the flow rate (sccm) of SiH₂(CH₂CH₃)₂, in accordance with Table V. The silicon precursor flow rate varied from 6.3 sccm to 25 sccm; while the other conditions were kept unchanged. The pressure was at 1.5 Torr; the wafer temperature was at 492° C.; metal (Hafnium) precursor flow rate was at 0.1 ml/min; helium carrier gas flow was at 100 sccm; helium dilution gas flow rate was at 0 sccm; and oxygen flow rate was at 100 sccm.

TABLE V
TDEAH and DES
										Index
	Wafer					He	Dep	Dep	Thick-	of
	Temp	Press	DLI	DES	O2	dilute	Time	Rate	ness	Ref.
Run	(° C.)	(Torr)	(ml/min)	(sccm)	(sccm)	(sccm)	(min)	(Å/min)	(Å)	n
1443-47-1	492	1.5	0.1	6.3	100	—	1.5	898	1347	1.9201
1443-47-2	492	1.5	0.1	6.3	100	—	1.5	1068	1602	1.9246
1443-48-1	492	1.5	0.1	10.3	100	—	1.5	1031	1546	1.8983
1443-48-2	492	1.5	0.1	14.3	100	—	1.5	999	1499	1.8459
1443-48-3	492	1.5	0.1	14.3	100	—	1.6	1093	1748	1.8451
1443-48-4	492	1.5	0.1	25	100	—	1.5	1477	2216	1.7599
1443-48-5	492	1.5	0.1	25	100	—	1	1417	1417	1.7870
1443-49-1	523	1.5	0.1	25	100	30	1	879	879	1.7881
1443-49-2	523	1.5	0.1	25	100	15	1	1366	1366	1.7558
1443-49-3	523	1.5	0.1	25	75	15	1	831	831	1.7095
1443-49-4	523	1.5	0.1	25	75	30	2.5	1408	3519	1.8332
1443-50-1	523	1.5	0.1	25	75	30	1	570	570	1.6874
1443-50-2	523	1.5	0.1	25	75	30	2.5	578	1444	1.7707
1443-50-3	523	1.5	0.1	25	75	0	1	164	164	1.3200
1443-50-4	511	1	0.1	25	100	0	1	1357	1357	1.8047
1443-50-5	493	0.5	0.1	25	100	0	1	1061	1061	1.8920
1443-50-6	493	0.5	0.1	25	100	5	1	1049	1049	1.9014
1443-51-1	493	0.5	0.05	25	100	5	1	792	792	2.0525
1443-51-2	511	1	0.1	45	100	15	1	1084	1084	1.7652
1443-51-3	511	1	0.1	45	100	10	1	1321	1321	1.7887

The salient feature shown in FIG. 2 is the index of refraction of the Hf—Si—O films (thus the dielectric constant of the Hf—Si—O film) decreases approximately linearly as the flow rate of the silicon precursor (thus the relative atomic concentration of silicon) increases. Therefore, FIG. 2 clearly indicates that the dielectric constant of hafnium silicate films can be tuned based upon the atomic concentration of hafnium, silicon, and oxygen in the film.

The embodiments of the present invention listed above, including the working examples, are exemplary of numerous embodiments that may be made of the present invention. It is contemplated that numerous other configurations of the process may be used, and the materials used in the process may be selected from numerous materials other than those specifically disclosed. In short, the present invention has been set forth with regard to particular embodiments, but the full scope of the present invention should be ascertained from the claims as follow.

Claims

1. A method for forming a metal silicate as a high k dielectric in an electronic device, comprising the steps of: providing diethylsilane to a reaction zone;concurrently providing a source of oxygen to the reaction zone;concurrently providing a metal precursor to the reaction zone;reacting the diethylsilane, source of oxygen and metal precursor by chemical vapor deposition to form a metal silicate on a substrate comprising the electronic device.

2. The method of claim 1 wherein the metal precursor is selected from the group consisting of metal amide, metal alkoxide and mixtures thereof.

3. The method of claim 2 wherein the metal is selected from the group consisting of hafnium, zirconium, and mixtures thereof.

4. The method of claim 1 wherein the source of oxygen is selected from the group consisting of oxygen gas, air, ozone and mixtures thereof.

5. The method of claim 1 wherein the diethylsilane, source of oxygen and metal precursor are reacted under chemical vapor deposition conditions.

6. The method of claim 5 wherein the chemical vapor deposition conditions comprise a pressure in the range of 0.5 to 2 Torr, and a temperature in the range of 250° C. to 450° C.

7. The method of claim 6 wherein the metal precursor flow rate is in the range of 0.05 to 0.1 milliliters per minute.

8. The method of claim 6 wherein a sweep gas is in the range of 100 to 150 standard cubic centimeters per minute.

9. The method of claim 8 wherein the sweep gas is selected from the group consisting of helium, argon, nitrogen and mixtures thereof.

10. The method of claim 1 wherein the diethylsilane is provided at a flow rate of 5 to 100 standard cubic centimeters per minute.

11. The method of claim 1 wherein the residence time of the diethylsilane, source of oxygen and metal precursor in the reaction is in the range of 0.05 to 2 seconds.

12. The method of claim 1 wherein the high k of metal silicate is changed by varying relative atomic concentration of metal precursor, diethylsilane, and oxygen in the reaction zone.

13. A method for forming hafnium silicate as a high k dielectric in an electronic device, comprising the steps of: providing diethylsilane to a reaction zone;concurrently providing a source of oxygen to the reaction zone;concurrently providing tetrakis(diethylamino)hafnium to the reaction zone;reacting the diethylsilane, source of oxygen and tetrakis(diethylamino)hafnium by chemical vapor deposition to form hafnium silicate on a substrate comprising the electronic device.

14. The method of claim 13 wherein the high k of hafnium silicate is changed by varying relative atomic concentration of tetrakis(diethylamino)hafnium, diethylsilane, and oxygen in the reaction zone.

15. A method for forming zirconium silicate as a high k dielectric in an electronic device, comprising the steps of: providing diethylsilane to a reaction zone;concurrently providing a source of oxygen to the reaction zone;concurrently providing tetrakis(diethylamino)zirconium to the reaction zone;reacting the diethylsilane, source of oxygen and tetrakis(diethylamino)zirconium by chemical vapor deposition to form zirconium silicate on a substrate comprising the electronic device.

16. The method of claim 15 wherein the high k of zirconium silicate is changed by varying relative atomic concentration of tetrakis(diethylamino)zirconium, diethylsilane, and oxygen in the reaction zone.