BRIEF DESCRIPTION OF THE DRAWINGS
Reference will now be made to the attached drawings, when read in combination with the following detailed description, wherein like reference numerals refer to like parts throughout the several views, and in which:
FIG. 1 is a perspective view of a single direct liquid injection DLI) device according to a first variant of the present inventions, and such as which can be incorporated into an atomic layer deposition (ALD) process associated with silicon wafer production;
FIG. 2 is a cross sectional illustration of the DLI device according to FIG. 1 and illustrating such features as manifold configuration for providing carrier gas inlet, the carrier gas/liquid interface in communication with the piezo valve controlled liquid vaporizer, the heating element, and the high conductance path vapor outlet controlled by the pair of run/vent valves;
FIG. 3 is a sectional perspective of the piezo controlled vaporizer component shown in FIG. 2;
FIG. 3A is a cutaway sectional perspective of the vaporizer component shown in FIG. 3;
FIG. 3B is an illustration of the piezo mixing valve assembled to the embarkation plate;
FIG. 3C is a further sectional perspective of an embarkation manifold component associated with the carrier annular region surrounding the liquid inlet port;
FIG. 3D is a cutaway sectional view of FIG. 3C;
FIG. 3E is a sectional perspective of the crossover manifold shown in FIG. 1 and in underlying communication with the inlet component of FIG. 3C;
FIG. 3F is a cutaway perspective of the crossover manifold shown in FIG. 3E
FIG. 4 is a perspective view of a vaporizer component base manifold illustrated in FIG. 1;
FIG. 4A is a cutaway sectional perspective of the manifold shown in FIG. 4;
FIG. 5 is a perspective view of a version of a bubbler component manifold;
FIG. 5A is a cutaway sectional perspective of the component manifold shown in FIG. 5;
FIG. 6 is a perspective view of the vaporizer component manifold shown in FIG. 1;
FIG. 6A is a cutaway sectional perspective of the vaporizer manifold shown in FIG. 6;
FIG. 7 is an assembled view of the heated cavity subassembly for assisting in phase change of the carrier gas/low vapor pressure liquid precursor mixture into the high conductance outlet vapor;
FIG. 7A is an exploded view of the heater subassembly of FIG. 7;
FIG. 8 is a perspective illustration of a further variant of a single direct liquid injection (DLI) device, illustrating a single bubbler component manifold installed and in joint communication with an associated pair of base manifolds;
FIG. 9 is a perspective illustration of a dual direct liquid injection (DLI) device according to a further variant of the present inventions;
FIG. 10 is a rotated perspective illustration of the device shown in FIG. 9;
FIG. 11 is a perspective illustration of the dual outlet manifold block according to a further sub-variant of the invention such as shown in FIG. 9 and illustrating both a central common path to an associated foreline, as well as first and second dilution inlets for associated first and second species of liquid injected precursor;
FIG. 11A is a cross sectional cutaway of the manifold block shown in FIG. 11;
FIG. 12 is a perspective illustration of a dual outlet, three base manifold DLI according to a yet further variant of the present inventions; and
FIG. 13 is a cross sectional view of FIG. 12 and showing the bubbler manifolds arranged atop the three base manifold configuration of FIG. 12.
Patent Application
20070194470
