Patent Application
20130224455
This application claims priority under 35 U.S.C. §119 to Korean Patent Application No. 10-2012-0021193, filed on Feb. 29, 2012, in the Korean Intellectual Property Office (KIPO), the contents of which are herein incorporated by reference in their entireties.
Exemplary embodiments of the present invention relate to a display substrate. More particularly, exemplary embodiments of the present invention relate to a display substrate having a blocking layer and a method for manufacturing the same.
Flat panel displays (FPDs) are in use today. FPDs have traditionally been rigid and to some extent, fragile. However, some modern FPDs are considered to be flexible displays. The flexible display includes an organic electroluminescence (EL) or an organic thin film transistor (TFT) implemented on a flexible substrate to produce a flexible thin-film transistor liquid crystal display (TFT-LCD), passive matrix (PM) LCD, an electrical paper and so on. The flexible display need not remain flexible after manufacturing and integration, but may, at some point in the manufacturing process, be capable of conforming to a desired shape that is not planar. The flexible substrate can include thin film shaped glass and a metal plate, however, the flexible substrate often includes a plastic substrate that may be easily-shaped, having low-weight and adaptability for sequence processes.
The flexible display substrate may have certain characteristics typically found within the conventional display. While a plastic substrate may offer the above-mentioned features, a glass substrate may offer greater chemical resistance, greater thermal resistance, decreased hygroscopicity, and/or decreased permeability.
Exemplary embodiments of the present invention provide a display substrate having a blocking layer and a method for manufacturing a substrate.
According to an exemplary embodiment of the present invention, a method for manufacturing a substrate includes forming a plastic base substrate and forming a blocking layer on a surface of the plastic base substrate by depositing a first material and a second material.
In an exemplary embodiment, a component ratio of the first material to the second material may be changed according to a height of the plastic base substrate.
In an exemplary embodiment, the method may further include a first layer having the first material and a second layer having the second material. The first layer and the second layer may be formed alternatingly.
In an exemplary embodiment, the first material may include organic material, and the second material comprises inorganic material.
In an exemplary embodiment, the first material may include polyacrylate, polyethylene naphthalate (PEN) or polyethylene terephthalte (PET).
In an exemplary embodiment, the second material may include silicon oxide (SiO2) or aluminum oxide (Al2O3).
In an exemplary embodiment, the first material and the second material may be supplied from at least two more sources respectively, and the component ratio of the first material to the second material may be adjusted by controlling the sources.
In an exemplary embodiment, the blocking layer may be formed by a sputtering method, and the blocking layer may be formed by sputtering the first material and the second material simultaneously.
In an exemplary embodiment, the blocking layer may be formed by a chemical vapor deposition (CVD) method, and the blocking layer may be formed by adjusting the component ratio of the first material to the second material.
In an exemplary embodiment, the plastic base substrate may be moved along a first direction, and a plurality of sources may be disposed along the first direction, and the first material and the second material may be supplied from a plurality of the sources.
In an exemplary embodiment, the blocking layer may be formed by a sputtering method, and the sources may supply the first material and the second material alternatingly.
In an exemplary embodiment, the blocking layer may be formed by a chemical vapor deposition (CVD) method, and the sources may supply the first material and the second material alternatingly.
In an exemplary embodiment, the sources may be disposed spaced apart from each other by different distances, and each of the distances may be increased according to each of thicknesses of the first layer and the second layer.
In an exemplary embodiment, the first layer may be formed substantially thicker than the second layer.
In an exemplary embodiment, thicknesses of the first layer may be constant, and thicknesses of the second layer may be increased according to a height of the plastic base substrate.
According to an exemplary embodiment of the present invention, a substrate includes a plastic base substrate and a blocking layer foamed at surfaces of the plastic base substrate and having a first layer and a second layer alternatingly. The first layer and second layer include continuously changing component ratio of a first material to a second material.
In an exemplary embodiment, the first material may include organic material, and the second material may include inorganic material.
In an exemplary embodiment, the first material may include polyacrylate, polyethylene naphthalate (PEN) or polyethylene terephthalte (PET).
In an exemplary embodiment, the second material may include silicon oxide (SiO2) or aluminum oxide (Al2O3).
In an exemplary embodiment, the first layer may be formed substantially thicker than the second layer.
In an exemplary embodiment, thicknesses of the first layer may be constant, and thicknesses of the second layer may be increased according to a height of the plastic base substrate.
According to the present invention, organic layers and inorganic layers of a blocking layer, which is formed on a base substrate, have continuously changing component ratio according to a height of the base substrate in manufacturing a flexible substrate. Thus, a discontinuous area does not exist between the organic layer and the inorganic layer of the blocking layer. The adhesive power between the organic layer and the inorganic layer may be increased. Thus, the blocking layer blocking moisture or oxygen effectively may be formed on the base substrate of the flexible substrate.
In addition, the organic layer of the blocking layer is formed thicker as the height from the base substrate is increased. The crack of the substrate may be prevented more effectively when the flexible substrate is bent. Thus, moisture or oxygen is blocked effectively.
A method for manufacturing a display substrate according to an exemplary embodiment of the present invention includes forming a plastic base substrate. A first material is deposited on at least one surface of the base substrate without depositing a second material creating a first layer composed entirely of the first material. The first and second materials are simultaneously deposited onto the first layer creating an intermediate layer comprising both the first and second materials. The second material is deposited on the intermediate layer without depositing the first material creating a second layer comprised entirely of the second material. The first material and the second material are distinct materials. The first, intermediate, and second layers together define a blocking layer blocking moisture and oxygen.
The above and other features of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the accompanying drawings, in which:
Hereinafter, exemplary embodiments of the present invention will be explained in detail with reference to the accompanying drawings.
Referring to
Referring to
The second layer 120 having the second material is formed on the base substrate 200, and the first layer 110 having the first material is formed on the second layer 120. Repeatedly, the second layer 120 having the second material is formed on the first layer 110 having the first material, and the first layer 110 having the first material is formed on the second layer 120. The component materials of the first layer 110 and the second layer 120 is not changed discontinuously, and the component materials of the first and second layers 110 and 120 are changed continuously with each additional layer. Thus, the boundary between the first layer 110 and the second layer 120 is not shaped clearly.
Since the boundary between the first layer 110 and the second layer 120 is not shaped clearly, the adhesion power between the first layer 110 and the second layer 120 is stronger than where the boundary is shaped clearly. Thus, cracking, which might be formed between the first layer 110 and the second layer 120, may be diminished.
Referring to
Referring to
The height of the continuous change area 130 may be changed. The height of the continuous change area 130 may be decided according to the adhesive power between the first layer 110 and the second layer 120 or the permeability of the blocking layer 100.
The first material includes an organic material. The second material includes an inorganic material. The first material may include polyacrylate, polyethylene naphthalate (PEN), polyethylene terephthalte (PET). The second material may include oxide silicon (SiO2), aluminum oxide (Al2O3).
The moisture or the oxygen might diffuse through the crack formed at the inorganic layer having the inorganic material. The organic layer having the organic material prevents the moisture of the oxygen from the penetration into the base substrate by increasing the diffusing distance. The organic layer is the first layer. The inorganic layer is the second layer. The first layer 110 may be formed thicker than the second layer 120. Since the stress distribution may be changed according to the height of the substrate, the thickness of the first layer 110 may be changed according to the height of the substrate.
Referring to
The first source 610 and the second source 620 of the present embodiment form a layer on the base substrate 200 by a sputtering method. According to a sputtering yield, an effective thickness, a surface roughness, an optical transmittancy of the materials used in the first source 610 and the second source 620, the blocking layer is formed by changing individual powers of the first source 610 and the second source 620.
Since the base substrate 200 is fixed in the chamber 510, the component ratio of the first material to the second material is adjusted by controlling the first source 610 and the second source 620. Thus, according to a kind of forming layer, only the first source 610 may be activated in some cases, or only the second source 620 may be activated in other cases. Both of the first source 610 and the second source 620 may be activated in yet other cases. The changes of the first layer and the second layer including the first material and the second material may be formed by simultaneous sputtering the first source 610 and the second source 620 on the base substrate 200 and controlling the intensities of the first source 610 and the second sources 620. Thus, the blocking layer having the changing component ratio of the first material to the second material according to the height may be formed.
Referring to
The first source 710 and the second source 720 form a layer on the base substrate 200 by a chemical vapor deposition (CVD) method. According to a boiling point, an effective thickness, a surface roughness, an optical transmittancy of the materials used in the first source 710 and the second source 720, the blocking layer is formed by changing individual powers of the first source 710 and the second source 720.
Since the base substrate 200 is fixed in the chamber 520, the component ratio of the first material to the second material is adjusted by controlling the first source 710 and the second source 720. Thus, according to a kind of forming layer, only the first source 710 may be activated in some cases, or only the second source 720 may be activated in other cases. Both of the first source 710 and the second source 720 may be activated in still other cases. The changes of the first layer and the second layer including the first material and the second material may be formed by simultaneous sputtering the first source 710 and the second source 720 on the base substrate 200 and controlling the intensities of the first source 710 and the second sources 720. Thus, the blocking layer having the changing component ratio of the first material to the second material according to the height may be formed.
Referring to
The first sources 611, 612 and the second sources 621, 622 form a layer on the base substrate 200 by a sputtering method. The first sources 611, 612 and the second sources 621, 622 are disposed alternatingly. When the first sources 611, 612 and the second sources 621, 622 are disposed alternatingly, the first layer and the second layer are formed alternatingly according to the movement of the base substrate 200.
According to a sputtering yield, an effective thickness, a surface roughness, an optical transmittancy of the materials used in the first sources 611, 612 and the second sources 621, 622, the blocking layer is formed by changing individual powers of the first sources 611, 612 and the second sources 621, 622. In addition, the blocking layer may be formed by maintaining the individual powers of the first sources 611, 612 and the second sources 621, 622 and moving the base substrate 200 in a constant direction.
Since the base substrate 200 is moved in the constant direction, a point of the base substrate 200 is affected by the first sources 611, 612 and the second sources 621, 622 by moving the base substrate 200 when the first sources 611, 612 and the second sources 621, 622 are disposed along the moving direction of the base substrate 200.
Thus, the materials supplied by the first sources 611, 612 and the second sources 621, 622 are deposited alternatingly at the same point.
The height of the layer, which is deposited on the base substrate 200, may be adjusted by controlling source distances L1, L2, L3. The source distances L1, L2, L3 are distances between the first sources 611, 612 and the second sources 621, 622. For example, the source distances L1, L2, L3 may be substantially the same as each other.
Moreover, the height of the layer may be adjusted by controlling the powers of the first sources 611, 612 and the second sources 621, 622. The intensities of the first sources 611, 612 and the second sources 621, 622 are illustrated differently. The intensities may be adjusted according to environmental conditions such as a thickness of the material for the base substrate 200.
Referring to
The first sources 711, 712 and the second sources 721, 722 form a layer on the base substrate 200 by a chemical vapor deposition (CVD) method. The first sources 711, 712 and the second sources 721, 722 are disposed alternatingly. When the first sources 711, 712 and the second sources 721, 722 are disposed alternatingly, the first layer and the second layer are formed alternatingly according to the movement of the base substrate 200.
According to a boiling point, an effective thickness, a surface roughness, an optical transmittancy of the materials used in the first sources 711, 712 and the second sources 721, 722, the blocking layer is formed by changing individual powers of the first sources 711, 712 and the second sources 721, 722. In addition, the blocking layer may be formed by maintaining the individual powers of the first sources 711, 712 and the second sources 721, 722 and moving the base substrate 200 in a constant direction.
Since the base substrate 200 is moved in the constant direction, a point of the base substrate 200 is affected by the first sources 711, 712 and the second sources 721, 722 by moving the base substrate 200 when the first sources 711, 712 and the second sources 721, 722 are disposed along the moving direction of the base substrate 200. When a layer is deposited by the CVD method, a depositing point may not be targeted clearly. Where desired, separate devices may be used for separating the sources in the chamber 540. Thus, the materials supplied by the first sources 711, 712 and the second sources 721, 722 are deposited alternatingly at the same point.
The height of the layer, which is deposited on the base substrate 200, may be adjusted by controlling source distances L1, L2, L3. The source distances L1, L2, L3 are distances between the first sources 711, 712 and the second sources 721, 722. For example, the source distances L1, L2, L3 may be substantially the same as each other.
Moreover, the height of the layer may be adjusted by controlling the powers of the first sources 711, 712 and the second sources 721, 722. The intensities of the first sources 711, 712 and the second sources 721, 722 are illustrated differently. The intensities may be adjusted according to environmental conditions such as a thickness of the material for the base substrate 200.
The components illustrated in
Referring to
The first sources 631, 632 and the second sources 641, 642 form a layer on the base substrate 200 by a sputtering method. The first sources 631, 632 and the second sources 641, 642 are disposed alternatingly. When the first sources 631, 632 and the second sources 641, 642 are disposed alternatingly, the first layer and the second layer are formed alternatingly according to the movement of the base substrate 200.
According to a sputtering yield, an effective thickness, a surface roughness, an optical transmittancy of the materials used in the first sources 631, 632 and the second sources 641, 642, the blocking layer is formed by changing individual powers of the first sources 631, 632 and the second sources 641, 642. In addition, the blocking layer may be formed by maintaining the individual powers of the first sources 631, 632 and the second sources 641, 642 and moving the base substrate 200 in a constant direction.
Since the base substrate 200 is moved in the constant direction, a point of the base substrate 200 is affected by the first sources 631, 632 and the second sources 641, 642 by moving the base substrate 200 when the first sources 631, 632 and the second sources 641, 642 are disposed along the moving direction of the base substrate 200. Thus, the materials supplied by the first sources 631, 632 and the second sources 641, 642 are deposited alternatingly at the same point.
The height of the layer, which is deposited on the base substrate 200, may be adjusted by controlling source distances L1′, L2′, L3′. The source distances L1′, L2′, L3′ are distances between the first sources 631, 632 and the second sources 641, 642. Where desired, the heights of the first layer and the second layer may be formed differently according to the height. For example, when the height of the first layers may be getting thicker as the height gets higher, the first layer formed thicker endures greater stress at the higher height as the base substrate 200 is bent. To form layers having the different heights, the blocking layer 100 may be formed by adjusting the source distances L1′, L2′, L3′ and the intensities of the first sources 631, 632 and the second sources 641, 642. The source distances may be used for adjusting the thickness of the first layer and the second layer of the blocking layer 100.
The components of the present invention illustrated in
Referring to
The first sources 731, 732 and the second sources 741, 742 form a layer on the base substrate 200 by a chemical vapor deposition (CVD) method. The first sources 731, 732 and the second sources 741, 742 are disposed alternatingly. When the first sources 731, 732 and the second sources 741, 742 are disposed alternatingly, the first layer and the second layer are formed alternatingly according to the movement of the base substrate 200.
According to a boiling point, an effective thickness, a surface roughness, an optical transmittancy of the materials used in the first sources 731, 732 and the second sources 741, 742, the blocking layer is formed by changing individual powers of the first sources 731, 732 and the second sources 741, 742. In addition, the blocking layer may be formed by maintaining the individual powers of the first sources 731, 732 and the second sources 741, 742 and moving the base substrate 200 in a constant direction.
Since the base substrate 200 is moved in the constant direction, a point of the base substrate 200 is affected by the first sources 731, 732 and the second sources 741, 742 by moving the base substrate 200 when the first sources 731, 732 and the second sources 741, 742 are disposed along the moving direction of the base substrate 200.
When a layer is deposited by the CVD method, a depositing point may not be targeted clearly. Where desired, separate devices may be used for separating the sources in the chamber 560. Thus, the materials supplied by the first sources 731, 732 and the second sources 741, 742 are deposited alternatingly at the same point.
The height of the layer, which is deposited on the base substrate 200, may be adjusted by controlling source distances L1′, L2′, L3′. The source distances L1′, L2′, L3′ are distances between the first sources 731, 732 and the second sources 741, 742. Where desired, the heights of the first layer and the second layer may be formed differently according to the height. For example, when the height of the first layers may be getting thicker as the height gets higher, the first layer formed thicker endures greater stress at the higher height as the base substrate 200 is bent. To form layers having the different heights, the blocking layer 100 may be formed by adjusting the source distances L1′, L2′, L3′ and the intensities of the first sources 731, 732 and the second sources 741, 742. The source distances may be used for adjusting the thickness of the first layer and the second layer of the blocking layer 100.
Referring to
The blocking layer 101 is formed on the base substrate 201. The blocking layer 101 is formed by depositing a plurality of layers. The blocking layer 101 includes first layers 111, 112, 113, 114 having a first material and second layers 121 having a second material.
The first layers 111, 112, 113, 114 have better endurance over the stress than the second layer. Thus, the first layers endure more stress than the second layers. When the flexible substrate is bent, the substrate forms a fan shape. When the flexible substrate formed the fan shape, the maximum stress is applied to the top area or the bottom area of the flexible substrate. The most stress is applied to the most deformed area. Thus, the stress distribution is changed according to the height.
When the blocking layer 101 is formed at the base substrate 201, the higher layer from the bent base substrate 201 has more stress among a plurality of layers of the blocking layer 101. Thus, the thicknesses of the first layers 111, 112, 113, 114 may be adjusted so that the higher layer from the base substrate 201 has more endurance for the stress.
Referring to
According to exemplary embodiments of the present invention, organic layers and inorganic layers of a blocking layer, which is formed on a base substrate, have continuously changing component ratio according to a height of the base substrate in manufacturing a flexible substrate. Thus, a discontinuous area does not exist between the organic layer and the inorganic layer of the blocking layer. The adhesive power between the organic layer and the inorganic layer may be increased. Thus, the blocking layer blocking moisture or oxygen effectively may be formed on the base substrate of the flexible substrate.
In addition, the organic layer of the blocking layer is formed thicker as the height from the base substrate is increased. The crack of the substrate may be prevented more effectively when the flexible substrate is bent. Thus, moisture or oxygen is blocked effectively.
The foregoing is illustrative of the present invention and is not to be construed as limiting thereof. Although a few exemplary embodiments of the present invention have been described, those skilled in the art will readily appreciate that many modifications are possible in the exemplary embodiments without materially departing from the present invention.
| Number | Date | Country | Kind |
|---|---|---|---|
| 10-2012-0021193 | Feb 2012 | KR | national |
