GaN, AIN, and InN; A review By: Strite, et al.; J. Vac. Sci. Technol. B 10(4), Jul./Aug. 1992, pp. 1237-1266. |
Partly Gain-Coupled 1.55 μm Strained-Layer Multiquantum-Well DFB Lasers By: Li, et al.; IEEE Journal of Quantum Electronics, vol. 29 No. 6 Jun. 1993, pp. 1736-1742. |
Demonstration of an electrically injected InGaN/GaN MQW DFB laser using holographically defined 3rd order gratings By: Hofstetter, et al.; IEEE Device Research Conference, Jun. 22-24, 1998, Charlottesville, VA. |
Characterization of a gain-coupled InGaN/GaN-based optically pumped MQW DFB laser By: Hofstetter, et al.; LEOS '98/Semiconductor Lasers, D. Hofstetter, Jun. 23, 1998. |
Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy By: Nam, et al.; Appl. Phys. Lett. 71 (18), Nov. 3, 1997, ©1997 American Institute of Physics, p. 2638-40. |
Room-temperature continuous-wave operations of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours By: Nakamura, et al.; Appl. Phys. Lett. 70(11), Mar. 17, 1997, ©1997 American Institute of Physics, p. 1417-1419. |
Coupled-Wave Theory of Distributed Feedback Lasers By: Kogelnik, et al.; Reflectance and Luminescence of GaAs, (no date available) (p. 2327-2335). |
Surface and subsurface imaging of indium in InGaAs by scanning tunneling microscopy By: Pfister, et al.; Applied Surface Science 104/105 (1996) 516-521 (publication month not available). |