Pendeo epitaxial lateral overgrowth [ELOG]

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HELECTRICITY H01Electric elements H01SDEVICES USING STIMULATED EMISSION H01S2304/00Special growth methods for semiconductor lasers

Current Industry

H01S2304/12Pendeo epitaxial lateral overgrowth [ELOG]

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Patents Grantslast 30 patents

Information Patent Grant
Method of obtaining a smooth surface with epitaxial lateral overgrowth
- Patent number 12,146,237
- Issue date Nov 19, 2024
- The Regents of the University of California
- Takeshi Kamikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of removing a substrate
- Patent number 12,046,695
- Issue date Jul 23, 2024
- The Regents of the University of California
- Takeshi Kamikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting element
- Patent number 12,034,274
- Issue date Jul 9, 2024
- Sony Corporation
- Tatsushi Hamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable laser diodes on a large area gallium and nitrogen co...
- Patent number 11,715,927
- Issue date Aug 1, 2023
- KYOCERA SLD Laser, Inc.
- Melvin McLaurin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting element
- Patent number 11,611,196
- Issue date Mar 21, 2023
- Sony Corporation
- Tatsushi Hamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable laser diodes on a large area gallium and nitrogen co...
- Patent number 11,228,158
- Issue date Jan 18, 2022
- KYOCERA SLD Laser, Inc.
- Melvin McLaurin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser
- Patent number 11,201,454
- Issue date Dec 14, 2021
- OSRAM OLED GmbH
- Clemens Vierheilig
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium and nitrogen containing laser device configured on a patter...
- Patent number 11,177,634
- Issue date Nov 16, 2021
- KYOCERA SLD Laser, Inc.
- Melvin McLaurin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting element and method of manufacturing the same
- Patent number 11,081,862
- Issue date Aug 3, 2021
- Sony Corporation
- Tatsushi Hamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser bars having trenches
- Patent number 10,784,653
- Issue date Sep 22, 2020
- OSRAM OLED GmbH
- Andreas Loeffler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming epitaxial substrate and semiconductor optical de...
- Patent number 10,756,507
- Issue date Aug 25, 2020
- Sumitomo Electric Industries, Ltd
- Toshimitsu Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photovoltaics on silicon
- Patent number 10,680,126
- Issue date Jun 9, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jizhong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride containing laser device configured on a patterned s...
- Patent number 10,651,629
- Issue date May 12, 2020
- Soraa Laser Diode, Inc.
- Melvin McLaurin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting element and method of manufacturing the same
- Patent number 10,541,513
- Issue date Jan 21, 2020
- Sony Corporation
- Tatsushi Hamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser arrangement and projector
- Patent number 10,270,225
- Issue date Apr 23, 2019
- Osram Opto Semiconductors GmbH
- Bernhard Stojetz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser diode and method of fabricating the same
- Patent number 9,997,893
- Issue date Jun 12, 2018
- Samsung Electronics Co., Ltd.
- Jaesoong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting element and method of manufacturing the same
- Patent number 9,893,492
- Issue date Feb 13, 2018
- Sony Corporation
- Tatsushi Hamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor free-standing substrate, method of manufactur...
- Patent number 9,779,934
- Issue date Oct 3, 2017
- Sumitomo Chemical Company, Limited
- Hajime Fujikura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Light emitting element having multiple surface areas of a semicondu...
- Patent number 9,595,810
- Issue date Mar 14, 2017
- Sony Corporation
- Tatsushi Hamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 9,444,011
- Issue date Sep 13, 2016
- Nichia Corporation
- Tokuya Kozaki
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Light emitting element and method of manufacturing the same
- Patent number 9,407,067
- Issue date Aug 2, 2016
- Sony Corporation
- Tatsushi Hamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optoelectronic semiconductor chip and method for the production the...
- Patent number 9,397,262
- Issue date Jul 19, 2016
- Osram Opto Semiconductors GmbH
- Stephan Lutgen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor laser
- Patent number 9,331,456
- Issue date May 3, 2016
- Sumitomo Electric Device Innovations, Inc.
- Masami Ishiura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor structure, multilayer structure, and nitride...
- Patent number 9,324,913
- Issue date Apr 26, 2016
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Songbaek Choe
- C30 - CRYSTAL GROWTH
Information Patent Grant
High-quality non-polar/semi-polar semiconductor device on porous ni...
- Patent number 9,153,737
- Issue date Oct 6, 2015
- SEOUL VIOSYS CO., LTD.
- Ok Hyun Nam
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Semiconductor light emitting device and wafer
- Patent number 9,142,717
- Issue date Sep 22, 2015
- Kabushiki Kaisha Toshiba
- Koichi Tachibana
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nitride semiconductor device
- Patent number 9,130,121
- Issue date Sep 8, 2015
- Nichia Corporation
- Tokuya Kozaki
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Optoelectronic device and method for manufacturing the same
- Patent number 9,093,605
- Issue date Jul 28, 2015
- Epistar Corporation
- De Shan Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
(Al,Ga,In)N diode laser fabricated at reduced temperature
- Patent number 9,054,498
- Issue date Jun 9, 2015
- The Regents of the University of California
- Daniel A. Cohen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Fabrication of nonpolar indium gallium nitride thin films, heterost...
- Patent number 8,882,935
- Issue date Nov 11, 2014
- The Regents of the University of California
- Arpan Chakraborty
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR FABRICATING A VERTICAL CAVITY SURFACE EMITTING LASER
- Publication number 20240413610
- Publication date Dec 12, 2024
- The Regents of the University of California
- Srinivas Gandrothula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, TEMPLATE SUBSTRATE,...
- Publication number 20240348003
- Publication date Oct 17, 2024
- KYOCERA CORPORATION
- Kentaro MURAKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING ELEMENT
- Publication number 20240332903
- Publication date Oct 3, 2024
- SONY CORPORATION
- Tatsushi HAMAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A RESONANT CAVITY AND DISTRIBUTED BRAGG REFLE...
- Publication number 20240079856
- Publication date Mar 7, 2024
- The Regents of the University of California
- Gandrothula Srinlvas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LASER DIODE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240006853
- Publication date Jan 4, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REMOVING A SUBSTRATE
- Publication number 20220352410
- Publication date Nov 3, 2022
- The Regents of the University of California
- Takeshi Kamikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REMOVING A SUBSTRATE
- Publication number 20220352409
- Publication date Nov 3, 2022
- The Regents of the University of California
- Takeshi Kamikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURABLE LASER DIODES ON A LARGE AREA GALLIUM AND NITROGEN CO...
- Publication number 20220181841
- Publication date Jun 9, 2022
- KYOCERA SLD Laser, Inc.
- Melvin McLaurin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE FOR REMOVAL OF DEVICES USING VOID PORTIONS
- Publication number 20220165570
- Publication date May 26, 2022
- The Regents of the University of California
- Takeshi Kamikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING ELEMENT
- Publication number 20210135428
- Publication date May 6, 2021
- SONY CORPORATION
- Tatsushi HAMAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURABLE LASER DIODES ON A LARGE AREA GALLIUM AND NITROGEN CO...
- Publication number 20200366050
- Publication date Nov 19, 2020
- Soraa Laser Diode, Inc.
- Melvin McLaurin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REMOVING A SUBSTRATE
- Publication number 20200194615
- Publication date Jun 18, 2020
- The Regents of the University of California
- Takeshi Kamikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME
- Publication number 20200106243
- Publication date Apr 2, 2020
- SONY CORPORATION
- Tatsushi Hamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME
- Publication number 20180145483
- Publication date May 24, 2018
- SONY CORPORATION
- Tatsushi Hamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR NONPOLAR GROUP III-NITRIDE FILMS GROWN ON MISCUT SUBSTRATES
- Publication number 20170327969
- Publication date Nov 16, 2017
- The Regents of the University of California
- Kenji Iso
- B82 - NANO-TECHNOLOGY
Information Patent Application
(Al,Ga,In)N DIODE LASER FABRICATED AT REDUCED TEMPERATURE
- Publication number 20140301419
- Publication date Oct 9, 2014
- The Regents of the University of California
- Daniel A. Cohen
- B82 - NANO-TECHNOLOGY
Information Patent Application
NITRIDE SEMICONDUCTOR STRUCTURE, MULTILAYER STRUCTURE, AND NITRIDE...
- Publication number 20140269801
- Publication date Sep 18, 2014
- PANASONIC CORPORATION
- Songbaek CHOE
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20140203242
- Publication date Jul 24, 2014
- Nichia Corporation.
- Tokuya Kozaki
- B82 - NANO-TECHNOLOGY
Information Patent Application
BASE SUBSTRATE, GALLIUM NITRIDE CRYSTAL MULTI-LAYER SUBSTRATE AND P...
- Publication number 20130313567
- Publication date Nov 28, 2013
- YAMAGUCHI UNIVERSITY
- Hiroshi Furuya
- C30 - CRYSTAL GROWTH
Information Patent Application
OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20130292720
- Publication date Nov 7, 2013
- De Shan KUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF NONPOLAR INDIUM GALLIUM NITRIDE THIN FILMS, HETEROST...
- Publication number 20130264540
- Publication date Oct 10, 2013
- Japan Science and Technology Agency
- Arpan Chakraborty
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD, SEMI...
- Publication number 20130230936
- Publication date Sep 5, 2013
- SONY CORPORATION
- OSAMU GOTO
- B82 - NANO-TECHNOLOGY
Information Patent Application
(Al,Ga,In)N DIODE LASER FABRICATED AT REDUCED TEMPERATURE
- Publication number 20130215921
- Publication date Aug 22, 2013
- The Regents of the University of California
- Daniel A. Cohen
- B82 - NANO-TECHNOLOGY
Information Patent Application
SUPPRESSION OF RELAXATION BY LIMITED AREA EPITAXY ON NON-C-PLANE (I...
- Publication number 20130099202
- Publication date Apr 25, 2013
- The Regents of the University of California
- Matthew T. Hardy
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20130089973
- Publication date Apr 11, 2013
- SHARP KABUSHIKI KAISHA
- Satoshi KOMADA
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method of Producing Template for Epitaxial Growth and Nitride Semic...
- Publication number 20130069079
- Publication date Mar 21, 2013
- Soko Kagaku Co., Ltd.
- Myunghee Kim
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE HAVING AN InGaN LAYER
- Publication number 20130058369
- Publication date Mar 7, 2013
- SOITEC
- Fabrice M. Letertre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20130056707
- Publication date Mar 7, 2013
- Nichia Corporation.
- Tokuya Kozaki
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR LASER MANUFACTURING METHOD AND SEMICONDUCTOR LASER
- Publication number 20120307854
- Publication date Dec 6, 2012
- Renesas Electronics Corporation
- Shunsuke NOZU
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR LASER
- Publication number 20120287956
- Publication date Nov 15, 2012
- Osram Opto Semiconductors GmbH
- Dimitri Dini
- H01 - BASIC ELECTRIC ELEMENTS

Pendeo epitaxial lateral overgrowth [ELOG]

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of obtaining a smooth surface with epitaxial lateral overgrowth

Method of removing a substrate

Light emitting element

Manufacturable laser diodes on a large area gallium and nitrogen co...

Light emitting element

Manufacturable laser diodes on a large area gallium and nitrogen co...

Semiconductor laser

Gallium and nitrogen containing laser device configured on a patter...

Light emitting element and method of manufacturing the same

Laser bars having trenches

Process of forming epitaxial substrate and semiconductor optical de...

Photovoltaics on silicon

Gallium nitride containing laser device configured on a patterned s...

Light emitting element and method of manufacturing the same

Semiconductor laser arrangement and projector

Semiconductor laser diode and method of fabricating the same

Light emitting element and method of manufacturing the same

Nitride semiconductor free-standing substrate, method of manufactur...

Light emitting element having multiple surface areas of a semicondu...

Nitride semiconductor device

Light emitting element and method of manufacturing the same

Optoelectronic semiconductor chip and method for the production the...

Method of manufacturing semiconductor laser

Nitride semiconductor structure, multilayer structure, and nitride...

High-quality non-polar/semi-polar semiconductor device on porous ni...

Semiconductor light emitting device and wafer

Nitride semiconductor device

Optoelectronic device and method for manufacturing the same

(Al,Ga,In)N diode laser fabricated at reduced temperature

Fabrication of nonpolar indium gallium nitride thin films, heterost...

Patents Applicationslast 30 patents

METHODS FOR FABRICATING A VERTICAL CAVITY SURFACE EMITTING LASER

MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, TEMPLATE SUBSTRATE,...

LIGHT EMITTING ELEMENT

METHOD OF FABRICATING A RESONANT CAVITY AND DISTRIBUTED BRAGG REFLE...

LASER DIODE AND METHOD FOR MANUFACTURING THE SAME

METHOD OF REMOVING A SUBSTRATE

METHOD OF REMOVING A SUBSTRATE

MANUFACTURABLE LASER DIODES ON A LARGE AREA GALLIUM AND NITROGEN CO...

SUBSTRATE FOR REMOVAL OF DEVICES USING VOID PORTIONS

LIGHT EMITTING ELEMENT

MANUFACTURABLE LASER DIODES ON A LARGE AREA GALLIUM AND NITROGEN CO...

METHOD OF REMOVING A SUBSTRATE

LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME

LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME

PLANAR NONPOLAR GROUP III-NITRIDE FILMS GROWN ON MISCUT SUBSTRATES

(Al,Ga,In)N DIODE LASER FABRICATED AT REDUCED TEMPERATURE

NITRIDE SEMICONDUCTOR STRUCTURE, MULTILAYER STRUCTURE, AND NITRIDE...

NITRIDE SEMICONDUCTOR DEVICE

BASE SUBSTRATE, GALLIUM NITRIDE CRYSTAL MULTI-LAYER SUBSTRATE AND P...

OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME

FABRICATION OF NONPOLAR INDIUM GALLIUM NITRIDE THIN FILMS, HETEROST...

SEMICONDUCTOR LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD, SEMI...

(Al,Ga,In)N DIODE LASER FABRICATED AT REDUCED TEMPERATURE

SUPPRESSION OF RELAXATION BY LIMITED AREA EPITAXY ON NON-C-PLANE (I...

METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE

Method of Producing Template for Epitaxial Growth and Nitride Semic...

SEMICONDUCTOR DEVICE HAVING AN InGaN LAYER

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR LASER MANUFACTURING METHOD AND SEMICONDUCTOR LASER

SEMICONDUCTOR LASER