Claims
- 1. A patterning method utilizing a dual pattern hard mask comprising a first set of one or more mask layer with a first pattern, and a second set of one or more mask layer with a second pattern, wherein mask layer materials of said first set include materials selected from the group consisting of SiCOH compounds and Sic-based dielectrics.
- 2. The patterning method of claim 1 wherein mask layer materials of said second set include materials selected from the group consisting of SiCOH compounds and SiC-based dielectrics.
- 3. The patterning method of claim 1 wherein mask layer materials of said first and second sets are different.
- 4. The patterning method of claim 1 wherein mask layer materials of said first and second sets are the same.
- 5. The patterning method of claim 1 wherein at least one set of mask layer is formed by sequential deposition of each constituent layer.
CROSS-REFERENCE TO RELATED APPLICATION
This is a division of application Ser. No. 09/126,212, filed Jul. 30, 1998 now U.S. Pat. No. 6,140,226.
The present application claims priority to co-pending U.S. provisional application Serial No. 60/071,628 filed Jan. 16, 1998.
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Provisional Applications (1)
|
Number |
Date |
Country |
|
60/071628 |
Jan 1998 |
US |