Claims
- 1. A thin film structure comprising a supported, thermally insulative polyimide layer, a layer of a metal oxide selected from the group consisting of aluminum oxide, chromium oxide and tantalum oxide and deposited on said polyimide layer and at least one metal strip on said metal oxide layer, said metal strip being composed of a metal selected from the group consisting of chromium, iron, nickel, palladium and platinum, the metal oxide layer being coextensive in area with the overlying metal strip so as to provide a chemical stabilization barrier between said polyimide layer and said metal.
- 2. In a thin film structure comprising an insulative polyimide layer and one or more overlying patterned electrically conductive platinum strips, the improvement comprising a tantalum oxide layer interposed between said polyimide layer and said platinum strip(s) to serve as a barrier to platinum catalyzed thermal degradation of said polyimide layer.
- 3. A thin film sensing device comprising a supported thermally insulative polyimide layer, a tantalum oxide layer overlying said polyimide layer and, electrically conductive platinum metallization elements overlying said tantalum oxide layer, said tantalum oxide layer being at least coextensive in area with said platinum elements so as to provide a barrier to platinum catalyzed thermal degradation of said polyimide layer and electrical insulation between said platinum elements.
- 4. A thin film structure as recited in claim 1 additionally comprising a said metal oxide layer(s) overlying said metal strip(s) and coextensive therewith.
- 5. A thin film structure as recited in claim 2 additionally comprising a tantalum oxide layer(s) overlying said platinum strip(s) and coextensive therewith.
- 6. A thin film device as recited in claim 3 additionally comprising a tantalum oxide layer(s) overlying said platinum element(s) and coextensive therewith.
- 7. A thin film structure as recited in claim 4 additionally comprising a said polymer layer overlying said metal oxide layer(s).
- 8. A thin film structure as recited in claim 5 additionally comprising a polyimide layer overlying said tantalum oxide layer(s).
- 9. A thin film device as recited in claim 6 additionally comprising a polyimide layer overlying said tantalum oxide layer(s).
- 10. A thin film device as recited in claim 2 in which the platinum metal was applied to said tantalum oxide layer/polyimide layer that was maintained at a temperature above 250.degree. C. during application of said platinum.
- 11. A thin film device as recited in claim 2 in which the tantalum oxide layer consists essentially of Ta.sub.2 O.sub.5.
- 12. A thin film sensing device as recited in claim 3 in which the platinum metallization was formed on a tantalum oxide layer/polyimide layer that was maintained at a temperature above 250.degree. C. during application of said platinum.
- 13. A thin film sensing device as recited in claim 3 in which the tantalum oxide layer consists essentially of Ta.sub.2 O.sub.5.
Parent Case Info
This invention is a continuation-in-part of U.S. Ser. No. 08/523,987, filed Sep. 6, 1995, now U.S. Pat. No. 5,631,417, and assigned to the assignee of this invention.
US Referenced Citations (6)
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
523987 |
Sep 1995 |
|