Claims
- 1. A process for fabricating a thin film semiconductor device on a transparent substrate, comprising:
- depositing a gate electrode on said transparent substrate,
- selecting at least one lower transparent insulating layer material, having a refractive index different from said transparent substrate, in combination with a thickness of at least one lower transparent insulating layer such that said lower transparent insulating layer thickness multiplied times said lower transparent insulating layer refractive index approximately equals an odd multiple of one fourth of the wavelength of lithographically active light transmitted through said transparent substrate,
- depositing at least one lower transparent insulating layer having said selected refractive index and thickness over said transparent substrate and said gate electrode,
- depositing a thin light-permeable semiconductor layer having a light absorbing property over said lower transparent insulating layer,
- applying a photoresist layer over said light-permeable semiconductor layer, and
- exposing said photoresist layer by transmitting said lithographically active light through said transparent substrate, said transparent insulating layers, and said light-permeable semicondcutor layer to said photoresist layer.
- 2. A process for fabricating a thin film semiconductor device as recited in claim 1 which further comprises:
- selecting at least one upper transparent insulating layer material, having a refractive index different from said transparent substrate, in combination with a thickness of at least one upper transparent insulating layer such that said upper transparent insulating layer thickness multiplied times said upper transparent insulating layer refractive index approximately equals an odd multiple of one fourth of the wavelength of said lithographically active light transmitted through said transparent substrate, and
- depositing at least one upper transparent insulating layer, having said selected refractive index and thickness, between said light-permeable semiconductor layer and said photoresist layer.
- 3. A process for fabricating a thin film semiconductor device as recited in claim 2, wherein sad transparent insulating layers are chosen from the group consisting of silicon dioxide and silicon nitride.
- 4. A process for fabricating a thin film semiconductor deice as recited in claim 2, wherein said light-permeable semiconductor layer is amorphous silicon.
- 5. A process for fabricating a thin film semiconductor device as recited in claim 2, wherein said substrate comprises glass.
- 6. A process for fabricating a thin film semiconductor device as recited in claim 1, wherein said transparent insulating layers are chosen from the group consisting of silicon dioxide and silicon nitride.
- 7. A process for fabricating a thin film semiconductor device as recited in claim 1, wherein said light-permeable semiconductor layer is amorphous silicon.
- 8. A process for fabricating a thin film semiconductor device as recited in claim 1, wherein said substrate comprises glass.
- 9. A process for fabricating a thin film semiconductor device on a transparent substrate, comprising:
- selecting at least one lower transparent insulating layer material, having a refractive index different from said transparent substrate, in combination with a thickness of at least one lower transparent insulating layer such that said lower transparent insulating layer thickness multiplied times said lower transparent insulting layer refractive index approximately equals an odd multiple of one fourth of the wavelength of lithographically active light transmitted through said transparent substrate,
- selecting at least one upper transparent insulating layer material, having a refractive index different from said transparent substrate, in combination with a thickness of at least one upper transparent insulating layer such that said upper transparent insulating layer thickness multiplied times said upper transparent insulating layer refractive index approximately equals an odd multiple of one fourth of the wavelength of said lithographically active light transmitted through said transparent substrate,
- depositing at least one lower transparent insulating layer having said selected refractive index and thickness on said transparent substrate,
- depositing at least one thin film, light-permeable layer having a light absorbing property, over said lower transparent insulating film, and
- depositing at least one upper transparent insulating layer having said selected refractive index and thickness over said light-permeable layer.
Parent Case Info
This application is a continuation of application Ser. No. 412,714, filed Sep. 26, 1989, now abandoned, which is a divisional of application Ser. No. 140,699, filed Jan. 4, 1988, now issued as U.S. Pat. No. 4,888,632.
Foreign Referenced Citations (1)
Number |
Date |
Country |
0090661 |
Oct 1983 |
EPX |
Divisions (1)
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Number |
Date |
Country |
Parent |
140699 |
Jan 1988 |
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Continuations (1)
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Number |
Date |
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Parent |
412714 |
Sep 1989 |
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