In a semiconductor fabrication system, one approach for reducing film deposition or etch times is to use a higher density plasma (HDP). One method for creating HDP is to increase the frequency of the RF source. As the frequency of the RF source is increased, however, its wavelength decreases and can become comparable to the dimensions in the plasma chamber. A microwave HDP source, such as one operating at 2.45 GHz, can have wavelengths of approximately 120 mm in vacuum and less (20-70 mm) in plasma. Over this wavelength, the electric field can be very non-uniform. With a 300 mm wafer, the variation of the electric field over the antenna, and consequently in the plasma, can also be very non-uniform. There is a need to make this electric field more uniform and thus provide better uniformity of deposited film or etch over the surface of the wafer.
The present disclosure may be directed, in one aspect, to a system for providing energy to a plasma chamber having multiple power signal inputs, the system comprising one or more dielectrics configured to distribute received energy to one or more antennas of a plasma chamber, the one or more dielectrics comprising N receiving areas positioned at a substantially equal distance from each other and at a substantially equal distance from a center point, wherein N is a natural number greater than one; N circular waveguides positioned over the N receiving areas of the one or more dielectrics such that each receiving area of the N receiving areas has a corresponding circular waveguide of the N circular waveguides, wherein each of the N circular waveguides comprises an input end, an output end, and a mode converter positioned between the input end and the output end and configured to convert a received first transverse mode signal to a second transverse mode signal to be output by the circular waveguide to the corresponding receiving area of the one or more dielectrics; and at least one phase adjuster circuit configured to adjust the phase of at least one of the first transverse mode signals received by the N circular waveguides such that, of the N circular waveguides, those adjacent have their received first transverse mode signals differ in phase by approximately 360/N.
In another aspect, a semiconductor processing system includes a power source transmitting, via N outputs, N first transverse mode signals, wherein N is a natural number greater than 1; at least one phase adjuster circuit; and a plasma chamber comprising N circular waveguides configured to receive the N first transverse mode signals, wherein each of the N circular waveguides comprises an input end; an output end; and a mode converter positioned between the input end and the output end and configured to convert the received first transverse mode signal to a second transverse mode signal to be output by the circular waveguide; and one or more dielectrics configured to receive the second transverse mode signals from the N circular waveguides and to distribute energy from the second transverse mode signals to one or more antennas of the plasma chamber, the one or more dielectrics comprising N receiving areas positioned at a substantially equal distance from each other and at a substantially equal distance from a center point; wherein the N circular waveguides are positioned adjacent to the N receiving areas of the one or more dielectrics such that each receiving area of the N receiving areas has a corresponding circular waveguide of the N circular waveguides; and wherein the at least one phase adjuster circuit is configured to adjust the phase of at least one of the first transverse mode signals received by the N circular waveguides such that the received first transverse mode signals differ in phase by approximately 360/N for adjacent ones of the N circular waveguides.
In another aspect, a system for providing energy to a plasma chamber having multiple power signal inputs is disclosed, the system comprising N dielectrics evenly positioned at a substantially equal distance from a center point, wherein N is a natural number greater than one; N antennas, wherein each dielectric of the N dielectrics is positioned over a corresponding antenna of the N antennas, and each dielectric of the N dielectrics is configured to provide received energy to its corresponding antenna of the N antennas; N circular waveguides, wherein each of the N circular waveguides is positioned over a corresponding one of the N dielectrics, wherein each of the N circular waveguides comprises an input end; an output end; and a mode converter positioned between the input end and the output end and configured to convert a received first transverse mode signal to a second transverse mode signal to be output by the circular waveguide to the corresponding dielectric of the one or more dielectrics; and at least one phase adjuster circuit configured to adjust the phase of at least one of the transverse mode signals received by the N circular waveguides such that the received transverse mode signals differ in phase by approximately 360/N for adjacent ones of the N circular waveguides.
While the disclosed inventions are applicable to semiconductor fabrication systems, the invention is not so limited.
The present disclosure will become more fully understood from the detailed description and the accompanying drawings, wherein:
The drawings represent one or more embodiments of the present invention(s) and do not limit the scope of invention.
The following description of the preferred embodiment(s) is merely exemplary in nature and is in no way intended to limit the invention or inventions. The description of illustrative embodiments is intended to be read in connection with the accompanying drawings, which are to be considered part of the entire written description. The discussion herein describes and illustrates some possible non-limiting combinations of features that may exist alone or in other combinations of features. Furthermore, as used herein, the term “or” is to be interpreted as a logical operator that results in true whenever one or more of its operands are true. Furthermore, as used herein, the phrase “based on” is to be interpreted as meaning “based at least in part on,” and therefore is not limited to the interpretation “based entirely on.” Furthermore, the term “each,” when used in reference to each of a plurality of items, need not refer to each such item in an entire system or apparatus, but may instead simply refer to each of the recited one or more such items in the system.
As used throughout, ranges are used as shorthand for describing each and every value that is within the range. Any value within the range can be selected as the terminus of the range. In addition, all references cited herein are hereby incorporated by referenced in their entireties. In the event of a conflict in a definition in the present disclosure and that of a cited reference, the present disclosure controls.
In the following description, where block diagrams or circuits are shown and described, one of skill in the art will recognize that, for the sake of clarity, not all peripheral components or circuits are shown in the figures or described in the description. For example, common components such as memory devices and power sources may not be discussed herein, as their role would be easily understood by those of ordinary skill in the art. Further, the terms “couple” and “operably couple” can refer to a direct or indirect coupling of two components of a circuit.
It is noted that for the sake of clarity and convenience in describing similar components or features, the same or similar reference numbers may be used herein across different embodiments or figures. This is not to imply that the components or features identified by a particular reference number are identical across each embodiment or figure, but only to suggest that the components or features are similar in general function or identity.
Features of the present inventions may be implemented in software, hardware, firmware, or combinations thereof. The computer programs described herein are not limited to any particular embodiment, and may be implemented in an operating system, application program, foreground or background processes, driver, or any combination thereof. The computer programs may be executed on a single computer or server processor or multiple computer or server processors.
Processors described herein may be any central processing unit (CPU), microprocessor, micro-controller, computational, or programmable device or circuit configured for executing computer program instructions (e.g., code). Various processors may be embodied in computer and/or server hardware of any suitable type (e.g., desktop, laptop, notebook, tablets, cellular phones, etc.) and may include all the usual ancillary components necessary to form a functional data processing device including without limitation a bus, software and data storage such as volatile and non-volatile memory, input/output devices, graphical user interfaces (GUIs), removable data storage, and wired and/or wireless communication interface devices including Wi-Fi, Bluetooth, LAN, etc. As used herein, the term “processor” may refer to one or more processors.
Computer-executable instructions or programs (e.g., software or code) and data described herein may be programmed into and tangibly embodied in a non-transitory computer-readable medium that is accessible to and retrievable by a respective processor as described herein which configures and directs the processor to perform the desired functions and processes by executing the instructions encoded in the medium. A device embodying a programmable processor configured to such non-transitory computer-executable instructions or programs may be referred to as a “programmable device”, or “device”, and multiple programmable devices in mutual communication may be referred to as a “programmable system.” It should be noted that non-transitory “computer-readable medium” as described herein may include, without limitation, any suitable volatile or non-volatile memory including random access memory (RAM) and various types thereof, read-only memory (ROM) and various types thereof, USB flash memory, and magnetic or optical data storage devices (e.g., internal/external hard disks, floppy discs, magnetic tape CD-ROM, DVD-ROM, optical disk, ZIP™ drive, Blu-ray disk, and others), which may be written to and/or read by a processor operably connected to the medium.
In certain embodiments, the present inventions may be embodied in the form of computer-implemented processes and apparatuses such as processor-based data processing and communication systems or computer systems for practicing those processes. The present inventions may also be embodied in the form of software or computer program code embodied in a non-transitory computer-readable storage medium, which when loaded into and executed by the data processing and communications systems or computer systems, the computer program code segments configure the processor to create specific logic circuits configured for implementing the processes.
Referring now to the figures,
The exemplified plasma chamber 19 includes one or more antennas 23 and a chuck 25 for holding the substrate. In processes known in the art, the first antenna(s) 23 and the chuck 25, in conjunction with appropriate control systems (not shown) and the plasma in the plasma chamber 19, enable deposition of materials onto a substrate 27 and/or etching of materials from the substrate 27 to fabricate a semiconductor device. The fabricated semiconductor device can be a microprocessor, a memory chip, or other type of integrated circuit or device.
In this embodiment, the antenna(s) 23 receives energy from the power source 47, while chuck 25 is ceramic and holds the substrate 27 and/or provides electrostatic (ESC) functionality. The one ore more antennas 23 may be, for example, one or more slot antennas (see
Plasma processing involves energizing a gas mixture by imparting energy to the gas molecules by introducing RF energy into the gas mixture. This gas mixture is contained in a vacuum chamber (the plasma chamber 19), and the RF energy is introduced into the plasma chamber 19 via the antenna(s) 23. Thus, the plasma may be energized by coupling power from the power source 47 into the plasma chamber 19 to perform deposition or etching. In a typical plasma process, the power source 47 generates power at a radio frequency and this power from the power source 47 is transmitted through cables 17A to the plasma chamber 19. In a preferred embodiment, a microwave frequency is used, such as 2.45 GHz, or 2-3 GHz, or at least 300 MHz, or at least 800 MHz, though the invention is not so limited.
As will be discussed in further detail below, the system 53 for fabricating a semiconductor further includes a system 54 for providing multiple signals S1′-S6′ to one or more antenna(s) 23 of a plasma chamber 19. In the exemplified system 54, the phase adjuster circuit 44 provides one or more phase-adjusted signals S1′-S6′ to waveguides 191. The waveguides 191 (after providing a mode conversion discussed below) provide the signals to one or more dielectrics 192 providing energy to the one or more antennas 23 of the plasma chamber 19.
The phase adjustment provided by the phase adjuster circuits 44 and the mode conversion provided by the waveguides 191 enable the generation of circular polarization, thereby enabling an improved electric field uniformity for the plasma chamber 19. In coaxial lines, such as lines 17A, the lowest mode of wave propagation is the transverse electromagnetic (TEM) mode, which has orthogonal e-field lines radiating radially out from the center terminal. In a circular waveguide (such as waveguides 191), however, the lowest mode of wave propagation is the TE11, where the e-field lines radiate from one edge of the outer shell to the opposite edge. Since a circular waveguide is symmetrical azimuthally, there are an infinite number of degenerate TE11 modes as the waveguide is rotated. Therefore, when a mode converter is designed to take a wave that is coaxial TEM to circular TE11, the direction of propagation must be exactly defined by the internal geometry to provide the exact direction of the TE11 mode and block the infinite degenerate modes. Each TE11 mode is linearly polarized if propagation is solely along a one of the degenerate modes, so a mode converter that specifies an exact direction of TE11 propagation is said to be linearly polarized. A TE11 circular waveguide becomes circularly polarized when two orthogonal linear modes are propagated where there is a 90 degree phase difference between the orthogonal modes. Circular polarization is desirable for field uniformity in the chamber as it guarantees azimuthal symmetry since any non-uniformity at a given radius is averaged out over a full rotation of the field.
One challenge for circular polarization is that it typically requires stability of the load to which the waveguide is propagating in order to maintain the phase relation between the two orthogonal modes that are being stimulated (plus exciting two orthogonal modes on the input side is difficult itself). This is incompatible with the varying plasma load in a plasma chamber such as plasma chamber 19. To overcome this, the invention described herein may recreate circular polarization in the aggregate of multiple linearly polarized TE11 circular inputs. As will be discussed in more detail below with regard to
The phase adjuster circuits 44 may be any circuit or circuits configured to adjust the phase of received signals as discussed herein. In the exemplified embodiment, the phase adjuster circuits are HMC631 vector modulators from Analog Devices that receive an analog 40 dB gain with 0-360 degree phase control (not shown). The power source 47 may also amplify the phase-adjusted signals S1′-S6′ via drivers 472 (e.g., a 1 W driver power amplifier). Further, a bias tee 473 may inject a DC voltage from a DC voltage source 474. The one or more phase-adjusted signals S1′-S6′ are provided to the outputs 17. Note that it is not necessary that each signal is phase adjusted. For example, signal S1 may receive no phase adjustment (θ1=0 degrees), while signal S2 has a phase of 60 degrees (θ2=60 degrees), signal S3 has a phase of 120 degrees (θ3=120 degrees), signal S4 has a phase of 180 degrees (θ4=180 degrees), signal S5 has a phase of 240 degrees (θ5=240 degrees), and signal S6 has a phase of 300 degrees (θ6=300 degrees).
Commonly owned U.S. Pat. No. 9,345,122, the disclosure of which is incorporated herein by reference in its entirety, provide examples of RF generators that may be applied to the power sources discussed herein.
The signal-receiving portion 54A of system 54 further includes six circular waveguides 191 positioned over (e.g., on or above) the receiving areas 194 of the dielectric plate 192 such that each receiving area 194 of the six receiving areas 194 has a corresponding circular waveguide 191. Each of the circular waveguides has an input end 191A, an output end 191B, and a mode converter 196. The mode converter 196 is positioned between the input end 191A and the output end 191B and configured to convert a received transverse electromagnetic (TEM) mode signal S6′ from a conductor 17A (such as a coaxial cable) to a transverse electric (TE11) mode signal S6′-11 to be output by the circular waveguide 191. It is noted that the invention is not limited to TEM and TE11 modes, as other first and second transverse modes may be used, including other transverse electric modes, transverse magnetic modes, and/or transverse electromagnetic modes. Such other modes may be useful, for example, where the dielectric 192 or antenna 23 is not of a circular shape.
The mode converter may be any type of mode converter for converting the received signal from TEM mode to TE11 mode. The exemplified mode converter 196 includes a center feed 196A and a side portion 196B to help cause the mode conversion. Further, the side portion 196B is connected to a cylindrical outer wall 197 (made from, e.g., aluminum) that surrounds the mode converter 196 and rests on the dielectric plate 192. The invention, however, is not limited to any particular structure for carrying out the mode conversion.
The system 54 further includes the phase adjuster circuits 44, which are discussed above with respect to
In another embodiment, if there were four waveguides and four receiving areas, the phases would differ by 90 degrees, and thus the respective signals could have phases, for example of 0 degrees, 90 degrees, 180 degrees, and 240 degrees. These are only examples and are not intended to limit the invention. Further, the phase (θ) of the TEM mode signal for each one of the N circular waveguides may alternatively be expressed as follows:
It is noted that the system 54 may further include a control circuit, which may include a processor such as those discussed herein. The control circuit may control the phase adjuster circuits 44 and/or other portions of the system 54.
According to this second embodiment, the invention may be understood as a system 53 for providing energy to a plasma chamber having multiple power signal inputs such as that shown in
Thus, according to this embodiment, the above-reference one or more dielectrics comprise N top dielectrics 292A, the one or more antennas comprise N antennas 223, and each top dielectric 292A of the N top dielectrics has a corresponding antenna 223 of the N antennas. Further, each of the top dielectrics 292A comprises a corresponding one of the N receiving areas 294. Thus, in this embodiment, each top dielectric 292A may be considered a receiving area. Further, each of the N antennas 223 is positioned over a corresponding bottom dielectric 292 B.
Finally, in another aspect, the invention may be understood as a method to control microwave power delivered to plasma chamber receiving multiple inputs to improve the uniformity of an electric field on the antenna of the plasma chamber. The method includes transmitting, via N outputs of a power source, N first transverse mode signals (e.g., TEM mode signals), wherein N is a natural number greater than 1. In another operation, N circular waveguides receive the N first transverse mode signals, wherein each of the N circular waveguides comprises an input end, an output end, and a mode converter positioned between the input end and the output end. In another operation, for each of the circular waveguides, the mode converter converts the received first transverse mode signal to a second transverse mode signal (e.g., TE11 mode signal) to be output by the circular waveguide. In another operation, the circular waveguide transmits the second transverse mode signal to one or more dielectrics positioned over an electrode of a plasma chamber, the one or more dielectrics comprising N receiving areas positioned at a substantially equal distance from each other and at a substantially equal distance from a center point. In another operation, the phase of at least one of the first transverse mode signals received by the N circular waveguides is adjusted such that, of the N circular waveguides, those adjacent have their received first transverse mode signals differ in phase by approximately 360/N.
While the inventions have been described with respect to specific examples including presently preferred modes of carrying out the inventions, those skilled in the art will appreciate that there are numerous variations and permutations of the above described systems and techniques. It is to be understood that other embodiments may be utilized and structural and functional modifications may be made without departing from the scope of the present inventions. Thus, the spirit and scope of the inventions should be construed broadly as set forth in the appended claims.
The present application claims the benefit of U.S. Provisional Patent Application No. 63/504,927 filed on May 30, 2023, which is incorporated herein by reference in its entirety.
Number | Date | Country | |
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63504927 | May 2023 | US |