Claims
- 1. A method comprising:
applying an electric potential simultaneously to at least 5000 discrete regions on a substrate while leaving intervening regions substantially free of applied potential.
- 2. The method of claim 1 wherein lack of the discrete regions is less than 1 μm in size.
- 3. The method of claim 2 wherein the applied electric potential is from 1 mV to 1 kV.
- 4. The method of claim 3 wherein the applied electric potential is from 100 mV to 20 V.
- 5. The method of claim 2 wherein the discrete regions are charged.
- 6. The method of claim 5 wherein the discrete regions received a charge 0.01 to 1 C/cm2.
- 7. The method of claim 5 wherein the discrete regions are positively charged.
- 8. The method of claim 5 wherein the discrete regions are negatively charged.
- 9. The method of claim 2 wherein the electric potential is applied at a current of 10 to 100 mA/ cm2.
- 10. The method of claim 1 wherein lack of the discrete regions is less than about 250 nm is size.
- 11. The method of claim 1 wherein the discrete regions are applied to the substrate at a density of at least 109 per square inch.
- 12. The method of claim 1 comprising oxidizing material at each of the discrete regions.
- 13. The method of claim 1 comprising trapping charges at each of the discrete regions.
- 14. The method of claim 1 wherein the discrete regions comprise resist.
- 15. The method of claim 1 wherein the discrete regions are in a coating of PMMA.
- 16. The method of claim 15 wherein the PMMA is coated onto a silicon wafer.
- 17. A method of claim 1, wherein the discrete regions are chemically altered.
- 18. The method of claim 17, wherein the substrate is chemically altered by changing the oxidation state of a portion of the substrate.
- 19. An article comprising:
a stamping surface including at least one protrusion contiguous with at least one indentation and a stamping surface having a pattern, the pattern including at least one feature having a lateral dimension of less than 100 microns, at least a portion of the stamping surface being electrically conductive.
- 20. The article of claim 19 wherein the stamping surface is flexible.
- 21. The article of claim 20 wherein the stamp is flexible.
- 22. The article of claim 20 wherein the stamping surface is comprised of elastomeric material.
- 23. The article of claim 19 wherein the stamp is comprised of elastomeric material.
- 24. The article of claim 23 wherein the stamp is comprised of polydimethylsiloxane.
- 25. The article of claim 23 wherein the elastomeric compound is electrically conductive.
- 26. The article of claim 19, wherein the stamping surface comprises a conductive coating.
- 27. The article of claim 19, wherein the stamping surface comprises a metallic coating.
- 28. The article of claim 19 wherein at least one feature has a lateral dimension of less than 10 microns.
- 29. The article of claim 28 wherein at least one feature has a lateral dimension of less than 1 micron.
- 30. An article comprising:
a flexible stamp having a surface wherein at least a portion of the surface is electrically conductive.
- 31. The article of claim 30 wherein the stamp comprises a elastomeric compound.
- 32. The article of claim 31 wherein the stamp is comprised of polydimethylsiloxane.
- 33. The article of claim 30 further comprising a plurality of protrusions on the surface.
- 34. The article of claim 30 having a density of surface protrusion of at least 5,000 per cm2.
- 35. The article of claim 34 wherein the stamp comprises a coating.
- 36. The article of claim 34 wherein the surface protrusions have an aspect ratio of at least 0.2:1.
- 37. The article of claim 34 wherein the surface protrusions form a pattern.
- 38. The article of claim 34 wherein the density of surface protrusions is at least 106/cm2.
- 39. A method comprising:
contacting a substrate with a flexible stamp; applying an electrical potential between the substrate and the stamp; and forming discrete features in a coating on the substrate.
- 40. The method of claim 39 further including passing current between the substrate and the stamp.
- 41. The method of claim 39 wherein the discrete features are charged.
- 42. The method of claim 39 further comprising a step of growing oxides on the coating.
- 43. A data storage device fabricated by a process comprising:
contacting a substrate with a flexible stamp having a plurality of protrusions on an electrically conductive surface; transferring a charge between the stamp and the substrate; and forming a plurality of discrete charged regions on the substrate.
- 44. The data storage device of claim 43 wherein the substrate comprises a silicon wafer.
- 45. The data storage device of claim 44 wherein the substrate further comprises polymethylmethacrylate.
- 46. The data storage device of claim 43 wherein the regions are positively charged.
- 47. The data storage device of claim 43 wherein the regions are negatively charged.
- 48. The data storage device of claim 43 wherein the regions are charged at about 1 V.
- 49. The data storage device of claim 43 wherein the discrete charged regions are stable for at least 3 weeks.
- 50. A method of printing a surface comprising:
simultaneously forming a plurality of trapped charges on at least a portion of the surface, at least one of the trapped charges having a dimension of less than 1 um.
- 51. The method of claim 50 wherein at least a second portion of the surface is charged at less than ½ the voltage of the charged regions.
- 52. The method of claim 51 wherein the at least a second portion of the surface is charged at less than about 0.1× the voltage of the charged particles.
- 53. The method of claim 50 wherein the surface is less than about 1 cm2.
RELATED APPLICATIONS
[0001] This application is a continuation of PCT International Application No. PCT/US01/21151 filed Jul. 2, 2001, which was published under PCT Article 21(2) in English, and claims priority via PCT/US01/21151 to U.S. Provisional Application Serial No. 60/215,682, filed on Jun. 30, 2000. Both applications are hereby incorporated by reference.
Provisional Applications (1)
|
Number |
Date |
Country |
|
60215682 |
Jun 2000 |
US |
Continuations (1)
|
Number |
Date |
Country |
Parent |
PCT/US01/21151 |
Jul 2001 |
US |
Child |
10316997 |
Dec 2002 |
US |