Claims
- 1. An electrically erasable programmable read only flash memory, formed on a substrate, wherein and the electrically erasable programmable read only flash memory at least comprises a plurality of memory cells, and each of the memory cells comprises:
- a floating gate buried within the substrate, with the side walls and :he bottom of the floating gate surrounded by a first dielectric layer, and a second dielectric layer deposited over the floating gate;
- a control gate located on the surface of the second dielectric layer; and
- two source/drain regions, locating beside the floating gate and within the substrate, respectively.
- 2. The electrically erasable programmable read only flash memory of claim 1, wherein the width of the control gate is smaller than that of the floating gate.
- 3. The electrically erasable programmable read only flash memory of claim 1, wherein the buried depth of the floating gate is smaller than the width of the floating gate.
- 4. The electrically erasable programmable read only flash memory of claim 1, wherein the width ratio of the floating gate and the control gate is about between 1/2 and 1/3.
- 5. The electrically erasable programmable read only flash memory of claim 1, wherein the ratio of the buried depth and the width of the floating gate is about between 1/2 and 1/3.
- 6. The electrically erasable programmable read only flash memory of claim 1, wherein the material of the floating gate comprises doped polysilicon.
- 7. The electrically erasable programmable read only flash memory of claim 1, wherein the material of the control gate comprises doped polysilicon.
- 8. The electrically erasable programmable read only flash memory of claim 1, wherein the material of the first dielectric layer comprises silicon oxide.
- 9. The electrically erasable programmable read only flash memory of claim 1, wherein the material of the second dielectric layer comprises silicon oxide.
- 10. The electrically erasable programmable read only flash memory of claim 1, wherein the source/drain regions are an N-doped region.
- 11. The electrically erasable programmable read only flash memory of claim 1, wherein the substrate is a P-substrate.
Priority Claims (1)
Number |
Date |
Country |
Kind |
87108222 |
May 1998 |
TWX |
|
CROSS-REFERENCE TO RELATED APPLICATION
This application claims the priority benefit of Taiwan application Ser. No. 87108222, filed May 27, 1998, the full disclosure of which is incorporated herein by reference.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
3740689 |
Yamashita |
Jun 1973 |
|
3974055 |
Arai |
Aug 1976 |
|