with one gate at least partly formed in a trench

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CPC
H01L29/42336

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/42336with one gate at least partly formed in a trench

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Triple-gate MOS transistor and method for manufacturing such a tran...
- Patent number 12,125,913
- Issue date Oct 22, 2024
- STMicroelectronicsa (Rousset) SAS
- Abderrezak Marzaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 12,068,418
- Issue date Aug 20, 2024
- Samsung Electronics Co., Ltd.
- Kyongsik Yeom
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact EEPROM memory cell with a gate dielectric layer having two...
- Patent number 12,052,861
- Issue date Jul 30, 2024
- STMicroelectronics (Rousset) SAS
- François Tailliet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semi-floating gate memory device and method for fabricating the same
- Patent number 12,040,413
- Issue date Jul 16, 2024
- Shanghai Huali Integrated Circuit Corporation
- Heng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming top select gate trenches
- Patent number 12,021,126
- Issue date Jun 25, 2024
- Yangtze Memory Technologies Co., Ltd.
- Hang Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory structure with enhanced floating gate
- Patent number 12,022,651
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Shu Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure and method of forming the same
- Patent number 12,015,059
- Issue date Jun 18, 2024
- Winbond Electronics Corp.
- Che-Jui Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate MOS transistor and method for manufacturing the same
- Patent number 11,996,458
- Issue date May 28, 2024
- Kabushiki Kaisha Toshiba
- Hiroyuki Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semi-floating gate device
- Patent number 11,955,524
- Issue date Apr 9, 2024
- Shanghai Huali Integrated Circuit Corporation
- Heng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two dimensional structure to control flash operation and methods fo...
- Patent number 11,903,193
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Chi-Chung Jen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate power MOSFET and split gate power MOSFET manufacturing m...
- Patent number 11,862,695
- Issue date Jan 2, 2024
- KEY FOUNDRY CO., LTD.
- Hyunkwang Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure for transistor devices
- Patent number 11,862,692
- Issue date Jan 2, 2024
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor structure
- Patent number 11,848,353
- Issue date Dec 19, 2023
- NANYA TECHNOLOGY CORPORATION
- Ching-Chia Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two dimensional structure to control flash operation and methods fo...
- Patent number 11,792,981
- Issue date Oct 17, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Chi-Chung Jen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with control electrodes provided in trenches o...
- Patent number 11,721,732
- Issue date Aug 8, 2023
- Kabushiki Kaisha Toshiba
- Masataka Ino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact EEPROM memory cell with a gate dielectric layer having two...
- Patent number 11,696,438
- Issue date Jul 4, 2023
- STMicroelectronics (Rousset) SAS
- François Tailliet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory device and method for fabricating the same
- Patent number 11,637,188
- Issue date Apr 25, 2023
- United Microelectronics Corp.
- Yu-Jen Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Symmetric arrangement of field plates in semiconductor devices
- Patent number 11,616,127
- Issue date Mar 28, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan Avraham Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NOR memory cell with vertical floating gate
- Patent number 11,616,071
- Issue date Mar 28, 2023
- GREENLIANT IP, LLC
- Bing Yeh
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for controlling same
- Patent number 11,538,929
- Issue date Dec 27, 2022
- Kabushiki Kaisha Toshiba
- Takeshi Suwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with peripheral gate structures
- Patent number 11,502,082
- Issue date Nov 15, 2022
- Samsung Electronics Co., Ltd.
- Ho-In Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and fabrication method thereof
- Patent number 11,502,163
- Issue date Nov 15, 2022
- NANYA TECHNOLOGY CORPORATION
- Ching-Chia Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate flash memory cells with a trench-formed select gate
- Patent number 11,404,549
- Issue date Aug 2, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with surge current protection
- Patent number 11,394,194
- Issue date Jul 19, 2022
- Infineon Technologies AG
- Johannes Georg Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure for power semiconductor devices
- Patent number 11,362,184
- Issue date Jun 14, 2022
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Symmetric arrangement of field plates in semiconductor devices
- Patent number 11,316,019
- Issue date Apr 26, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan Avraham Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate MOS transistor and method for manufacturing
- Patent number 11,251,278
- Issue date Feb 15, 2022
- Kabushiki Kaisha Toshiba
- Hiroyuki Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having gate dielectric and inhibitor film over...
- Patent number 11,211,465
- Issue date Dec 28, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Mrunal A. Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory structure with enhanced floating gate
- Patent number 11,107,825
- Issue date Aug 31, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Shu Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
LDMOS with high-k drain STI dielectric
- Patent number 11,081,558
- Issue date Aug 3, 2021
- Texas Instruments Incorporated
- Umamaheswari Aghoram
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250022924
- Publication date Jan 16, 2025
- RENESAS ELECTRONICS CORPORATION
- Keiichi MAEKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRIPLE-GATE MOS TRANSISTOR AND METHOD FOR MANUFACTURING SUCH A TRAN...
- Publication number 20250015188
- Publication date Jan 9, 2025
- STMicroelectronics (Rousset) SAS
- Abderrezak MARZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20240363764
- Publication date Oct 31, 2024
- Samsung Electronics Co., Ltd.
- KYONGSIK YEOM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING TOP SELECT GATE TRENCHES
- Publication number 20240304693
- Publication date Sep 12, 2024
- Yangtze Memory Technologies Co., Ltd.
- Hang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240304681
- Publication date Sep 12, 2024
- WINBOND ELECTRONICS CORP.
- Chi-Ching LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240297226
- Publication date Sep 5, 2024
- WINBOND ELECTRONICS CORP.
- Che-Jui HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240194755
- Publication date Jun 13, 2024
- WINBOND ELECTRONICS CORP.
- Tzu-Yun HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT COMPRISING A CAPACITIVE TRANSISTOR
- Publication number 20240186318
- Publication date Jun 6, 2024
- STMicroelectronics (Rousset) SAS
- Christian RIVERO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH MEMORY STRUCTURE WITH ENHANCED FLOATING GATE
- Publication number 20240147714
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Shu Huang
- G11 - INFORMATION STORAGE
Information Patent Application
SPLIT GATE POWER MOSFET AND SPLIT GATE POWER MOSFET MANUFACTURING M...
- Publication number 20240088247
- Publication date Mar 14, 2024
- KEY FOUNDRY CO., LTD.
- Hyunkwang SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER FLASH AND METHOD FOR MANUFACTURING SAME
- Publication number 20240038861
- Publication date Feb 1, 2024
- Shanghai Huali Integrated Circuit Corporation
- Qin SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MAKING
- Publication number 20230343696
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20230335602
- Publication date Oct 19, 2023
- WINBOND ELECTRONICS CORP.
- Che-Jui HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPACT EEPROM MEMORY CELL WITH A GATE DIELECTRIC LAYER HAVING TWO...
- Publication number 20230301076
- Publication date Sep 21, 2023
- ST Microelectronics (Rousset) SAS
- François Tailliet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semi-Floating Gate Memory Device and Method for Fabricating the Same
- Publication number 20230146733
- Publication date May 11, 2023
- Shanghai Huali Integrated Circuit Corporation
- Heng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME, AND N...
- Publication number 20230067170
- Publication date Mar 2, 2023
- Yangtze Memory Technologies Co., Ltd.
- Lan Yao
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20230055520
- Publication date Feb 23, 2023
- Kabushiki Kaisha Toshiba
- Masataka INO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20220416076
- Publication date Dec 29, 2022
- Samsung Electronics Co., Ltd.
- KYONGSIK YEOM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE POWER MOSFET AND SPLIT GATE POWER MOSFET MANUFACTURING M...
- Publication number 20220393011
- Publication date Dec 8, 2022
- KEY FOUNDRY CO., LTD.
- Hyunkwang SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semi-Floating Gate Device
- Publication number 20220384596
- Publication date Dec 1, 2022
- Shanghai Huali Integrated Circuit Corporation
- Heng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO DIMENSIONAL STRUCTURE TO CONTROL FLASH OPERATION AND METHODS FO...
- Publication number 20220352192
- Publication date Nov 3, 2022
- TAIWAN SEMICONDUCTOR MANFACTURING COMPANY LIMITED
- Chi-Chung JEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20220271136
- Publication date Aug 25, 2022
- United Microelectronics Corp.
- Yu-Jen Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURE FOR TRANSISTOR DEVICES
- Publication number 20220262910
- Publication date Aug 18, 2022
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220216313
- Publication date Jul 7, 2022
- Rohm Co., Ltd.
- Kohei MURASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20220149168
- Publication date May 12, 2022
- Kabushiki Kaisha Toshiba
- Hiroyuki Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY
- Publication number 20220123119
- Publication date Apr 21, 2022
- STMicroelectronics (Rousset) SAS
- Christian RIVERO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRIPLE-GATE MOS TRANSISTOR AND METHOD FOR MANUFACTURING SUCH A TRAN...
- Publication number 20220102556
- Publication date Mar 31, 2022
- STMicroelectronicsa (Rousset) SAS
- Abderrezak MARZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE FLASH MEMORY CELLS WITH A TRENCH-FORMED SELECT GATE
- Publication number 20220093765
- Publication date Mar 24, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- XINSHU CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING TOP SELECT GATE TRENCHES
- Publication number 20220085181
- Publication date Mar 17, 2022
- Yangtze Memory Technologies Co., Ltd.
- Hang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO DIMENSIONAL STRUCTURE TO CONTROL FLASH OPERATION AND METHODS FO...
- Publication number 20220059556
- Publication date Feb 24, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Chi-Chung JEN
- H01 - BASIC ELECTRIC ELEMENTS

with one gate at least partly formed in a trench

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Triple-gate MOS transistor and method for manufacturing such a tran...

Integrated circuit device

Compact EEPROM memory cell with a gate dielectric layer having two...

Semi-floating gate memory device and method for fabricating the same

Method of forming top select gate trenches

Flash memory structure with enhanced floating gate

Semiconductor structure and method of forming the same

Trench-gate MOS transistor and method for manufacturing the same

Semi-floating gate device

Two dimensional structure to control flash operation and methods fo...

Split gate power MOSFET and split gate power MOSFET manufacturing m...

Contact structure for transistor devices

Method of fabricating semiconductor structure

Two dimensional structure to control flash operation and methods fo...

Semiconductor device with control electrodes provided in trenches o...

Compact EEPROM memory cell with a gate dielectric layer having two...

Non-volatile memory device and method for fabricating the same

Symmetric arrangement of field plates in semiconductor devices

NOR memory cell with vertical floating gate

Semiconductor device and method for controlling same

Semiconductor devices with peripheral gate structures

Semiconductor structure and fabrication method thereof

Split gate flash memory cells with a trench-formed select gate

Semiconductor device with surge current protection

Contact structure for power semiconductor devices

Symmetric arrangement of field plates in semiconductor devices

Trench-gate MOS transistor and method for manufacturing

Semiconductor device having gate dielectric and inhibitor film over...

Flash memory structure with enhanced floating gate

LDMOS with high-k drain STI dielectric

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

TRIPLE-GATE MOS TRANSISTOR AND METHOD FOR MANUFACTURING SUCH A TRAN...

INTEGRATED CIRCUIT DEVICE

METHOD OF FORMING TOP SELECT GATE TRENCHES

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

INTEGRATED CIRCUIT COMPRISING A CAPACITIVE TRANSISTOR

FLASH MEMORY STRUCTURE WITH ENHANCED FLOATING GATE

SPLIT GATE POWER MOSFET AND SPLIT GATE POWER MOSFET MANUFACTURING M...

SUPER FLASH AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICE AND METHOD OF MAKING

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

COMPACT EEPROM MEMORY CELL WITH A GATE DIELECTRIC LAYER HAVING TWO...

Semi-Floating Gate Memory Device and Method for Fabricating the Same

SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME, AND N...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

INTEGRATED CIRCUIT DEVICE

SPLIT GATE POWER MOSFET AND SPLIT GATE POWER MOSFET MANUFACTURING M...

Semi-Floating Gate Device

TWO DIMENSIONAL STRUCTURE TO CONTROL FLASH OPERATION AND METHODS FO...

NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

CONTACT STRUCTURE FOR TRANSISTOR DEVICES

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

NON-VOLATILE MEMORY

TRIPLE-GATE MOS TRANSISTOR AND METHOD FOR MANUFACTURING SUCH A TRAN...

SPLIT GATE FLASH MEMORY CELLS WITH A TRENCH-FORMED SELECT GATE

METHOD OF FORMING TOP SELECT GATE TRENCHES

TWO DIMENSIONAL STRUCTURE TO CONTROL FLASH OPERATION AND METHODS FO...