Patent Application
20200006009
The embodiments described herein relate to an electricity storage device and a method for manufacturing a solid electrolyte layer.
Capacitors have been generally used as a structure in which an insulation layer is sandwiched between electrodes from both sides.
Moreover, there has also been proposed an electricity storage device having a structure in which an n type semiconductor layer, a hydrous porous insulation layer, and a p type semiconductor layer are layered one after another, and electrodes are formed on upper and lower sides thereof.
The embodiments provide an electricity storage device having an increased electricity storage capacity and improved reliability that can be charged without degradation even when a charging voltage is increased, and a method for manufacturing a solid electrolyte layer.
According to one aspect of the embodiments, there is provided an electricity storage device comprising: a first conductivity-type first oxide semiconductor; a solid electrolyte layer disposed on the first oxide semiconductor layer, the solid electrolyte layer including a solid electrolyte enabling proton movement; and a second conductivity-type second oxide semiconductor layer disposed on the solid electrolyte layer.
According to another aspect of the embodiments, there is provided a method for manufacturing a solid electrolyte layer comprising: coating diluted silicone oil; firing the coated silicone oil; and irradiating the fired silicone oil with ultraviolet rays.
According to the embodiments, there can be provided the electricity storage device having the increased electricity storage capacity and improved reliability that can be charged without degradation even when the charging voltage is increased, and the method for manufacturing the solid electrolyte layer.
Next, the embodiments will be described with reference to drawings. In the description of the following drawings, the identical or similar reference sign is attached to the identical or similar part. However, it should be noted that the drawings are schematic and therefore the relation between thickness and the plane size and the ratio of the thickness differs from an actual thing. Therefore, detailed thickness and size should be determined in consideration of the following explanation. Of course, the part from which the relation and ratio of a mutual size differ also in mutually drawings is included.
Moreover, the embodiments shown hereinafter exemplify the apparatus and method for materializing the technical idea; and the embodiments do not specify the material, shape, structure, placement, etc. of each component part as the following. The embodiments may be changed without departing from the spirit or scope of claims.
In explanation of following embodiments, a first conductivity type means an n type and a second conductivity type means a p type opposite to the first conductivity type, for example.
As shown in
The insulator layer 15N can be formed by including SiNy, for example.
The second oxide semiconductor layer 24 can be formed by including a nickel oxide (NiO) which is a p type oxide semiconductor.
As shown in
According to the electricity storage device according to the comparative example 1, the capacitor is merely formed if only providing the insulator layer 15N and therefore an amount of electricity storage is also small.
As shown in
The solid electrolyte layer 16K can be formed by including a silicon oxide (SiOx), for example. Other configurations thereof are the same as those of the comparative example 1.
As shown in
According to the charging and discharging characteristics of the electricity storage device according to the comparative example 2, an amount of electricity storage larger than the electricity storage device according to the comparative example 1 is obtained even when charging for a long period in a constant current.
The electricity storage device 30A according to the comparative example 1 has small amount of electricity storage since it indicates the capacitor characteristics. However, since the electricity storage device 30A according to the comparative example 2 has a structure in which the solid electrolyte layer 16K contacts the second oxide semiconductor layer 24, as compared with the electricity storage device 30A according to the comparative example 1, it becomes easy to move protons toward the first oxide semiconductor layer 14 from the second oxide semiconductor layer 24 in a voltage applied state in which the second electrode (E2) 26 has high potential with respect to the first electrode (E1) 12. Accordingly, the electricity storage device 30A according to the comparative example 2 can store electricity more than the electricity storage device 30A of the comparative example 1.
Since the electricity storage device 30A according to the comparative example 1 has a structure in which the insulator layer 15N is in contact with the second oxide semiconductor layer 24, it is considered that the proton movement from the second oxide semiconductor layer 24 is interfered by the insulator layer 15N, and therefore movement toward the first oxide semiconductor layer 14 becomes difficult.
However, as shown in
As shown in
In the embodiments, the first conductivity-type first oxide semiconductor 14 means an oxide semiconductor layer composed by including a first conductivity-type first oxide semiconductor. The second conductivity-type second oxide semiconductor layer 24 means an oxide semiconductor layer composed by including a second conductivity-type second oxide semiconductor. The same applies hereafter.
Moreover, an insulator layer 18N including an insulating material may be disposed between the solid electrolyte layer 18K and the first oxide semiconductor layer 14.
Moreover, an insulating material may further be contained in the solid electrolyte layer 18K. In the embodiments, a solid electrolyte composed of SiO and an insulating material composed of the SiN, for example, may be contained in the solid electrolyte layer 18K.
Moreover, more solid electrolyte than the insulating material may exist at the second oxide semiconductor layer 24 side of the solid electrolyte layer 18K. More specifically, more solid electrolyte composed of SiO than the insulating material composed of SiN may exist at the second oxide semiconductor layer 24 side of the solid electrolyte layer 18K, for example.
Since the insulator layer 18N is in contact with the solid electrolyte layer 18K in the electricity storage device 30 according to the embodiments, as compared with the electricity storage device 30A according to the comparative example 2, the breakdown voltage is increased.
The solid electrolyte layer 16K can be formed by including SiOx, for example. The insulator layer 18N includes plasma-silicon nitride (P-SiNy) (second insulating material) which has a non-hydrous property (no water content) and is not porous, for example. The insulator layer 18N includes a layer with high film density, and has a property that it is hard to contain water as compared with SiOx.
A thickness of the SiOx is approximately 20 nm to approximately 70 nm, for example.
The insulator layer 18N can be formed by including SiNy, for example. In the embodiments, when the plasma-silicon nitride (P-SiNy) is formed as the SiNy, a thickness thereof is equal to or less than approximately 10 nm, for example. The thickness thereof is more preferably approximately 7 nm to approximately 10 nm, for example.
The first electrode 12 can be formed of a stacked layer of W and Ti or chromium (Cr), and the second electrode 26 can be formed of Al, for example. The first electrode 12 is disposed on a surface which is not opposite to the insulator layer 18N of the first oxide semiconductor layer 14. Moreover, the second electrode 26 is disposed on a surface which is not opposite to the solid electrolyte layer 18K of the second oxide semiconductor layer 24.
The first oxide semiconductor layer 14 can be formed by including a titanium oxide (TiO2) which is an n type oxide semiconductor, for example.
The second oxide semiconductor layer 24 can be formed by including a nickel oxide (NiO) which is a p type oxide semiconductor. A thickness of the nickel oxide (NiO) is approximately 200 nm, for example.
As shown in
In the case of the electricity storage device 30 according to the embodiments, as shown in
As shown in
According to the electricity storage device 30 according to the embodiments, a larger amount of electricity storage than the electricity storage device according to the comparative example 1 or 2 can be confirmed, also in the case of charging for a long period at the constant current.
According to the electricity storage device 30 according to the embodiments, also in the double layered structure of SiNy/SiOx into which the insulator layer 18N is inserted, the increased amount of electricity storage more than the capacitor, and the breakdown voltage at the time of charging can also be improved. A larger amount of the electricity storage than the capacitor also in the charging for a long period at the constant current is confirmed. This is a result of reducing degradation of SiOx due to the voltage by using the double layered structure.
Moreover, since the breakdown voltage of the film of SiNy is high, the breakdown voltage is improved by using the double layered structure of SiNy/SiOx into which the insulator layer 18N inserted, and the breakdown voltage of whole of the electricity storage device 30 can be improved.
Moreover, SiOx can be formed from silicone oil.
Moreover, SiOx may be formed from a metal containing silicone.
The solid electrolyte layer 18K may be manufactured by a process including: coating diluted silicone oil on a first oxide semiconductor layer 14; firing the coated silicone oil; and irradiating the fired silicone oil with ultraviolet rays.
Moreover, a manufacturing method of the above-mentioned solid electrolyte layer 18K may include: coating diluted silicone oil; firing the coated silicone oil; and irradiating the fired silicone oil with ultraviolet rays.
According to the embodiments, there can be provided the electricity storage device having the increased electricity storage capacity and improved reliability that can be charged without degradation even when the charging voltage is increased.
As explained above, the embodiments have been described, as a disclosure including associated description and drawings to be construed as illustrative, not restrictive. This disclosure makes clear a variety of alternative embodiments, working examples, and operational techniques for those skilled in the art.
Such being the case, the embodiments cover a variety of embodiments, whether described or not.
The electricity storage device of the embodiments can be utilized for various consumer equipment and industrial equipment, and can be applied to wide applicable fields, such as electricity storage devices for system applications capable of transmitting various kinds of sensor information with low power consumption, e.g. communication terminals and electricity storage devices for wireless sensor networks.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2017-049589 | Mar 2017 | JP | national |
This application is a continuation of international patent application number PCT/JP2018/007774, having an international filing date of Mar. 1, 2018, which claims priority to Japan patent application number P2017-049589, filed on Mar. 15, 2017. The entire content of the referenced applications is incorporated herein by reference.
| Number | Date | Country | |
|---|---|---|---|
| Parent | PCT/JP2018/007774 | Mar 2018 | US |
| Child | 16569329 | US |
