Patent Application
20050163916
The present invention is related to the field of integrated circuits (IC). More specifically, various aspects of the present invention are related to electroplating electroless plating of wafers, an operation included in most IC fabrication process. As with virtually all other fabrication operations, deposition, planarization, etching, and so forth, the requirements have to be met with virtually no deviation.
The present invention will be described by way of exemplary embodiments, but not limitations, illustrated in the accompanying drawings in which like references denote similar elements, and in which:
Various aspects of the illustrative embodiments will be described using terms commonly employed by those skilled in the art to convey the substance of their work to others skilled in the art. However, it will be apparent to those skilled in the art that the present invention may be practiced with only some of the described aspects. For purposes of explanation, specific numbers, materials and configurations are set forth in order to provide a thorough understanding of the illustrative embodiments. However, it will be apparent to one skilled in the art that the present invention may be practiced without the specific details. In other instances, well-known features are omitted or simplified in order not to obscure the illustrative embodiments.
Various operations will be described as multiple discrete operations, in turn, in a manner that is most helpful in understanding the present invention, however, the order of description should not be construed to imply that these operations are necessarily order dependent. In particular, these operations need not be performed in the order of presentation.
The phrase “in one embodiment” is used repeatedly. The phrase generally does not refer to the same embodiment, however, it may. The terms “comprising”, “having” and “including” are synonymous, unless the context dictates otherwise.
Referring now to
Chamber 102 is employed to apply a plating solution to wafers. In various embodiments, chamber 102 may be a spray type, a microcell type, a spin on type, or other electroless plating chamber of the like.
For the embodiments, the chemicals employed to form the plating solution are separated pre-heated to an application temperature, and mixed in-line at point 122 of piping system 120 which is substantially just prior to the point of application to a wafer (in chamber 102). Resultantly, plating solution is anticipated to be more suitable for plating wafer, e,g. containing less particles.
In various embodiments, the plating solution is formed by mixing a metal with a complexing agent, a buffer, a pH adjuster and/or a reducing agent. In various embodiments, the metal may be one of Co, Cu, Ni, Fe, Ag, Au, Pt, Pd and Ru. The complexing agent may be a selected one of a citric acid and EDTA (Ethylenediamine Tetraacetic Acid). The buffer may be a selected one of NH4Cl and a boric acid. The pH adjuster is a selected one of KOH and TMAH (Tetramethylammonium Hydroxide). The reducing agent may be one of DMAB (Dimethylaminobenzaldehyde), hypophosphite, formaldehyde, and glyoxylic acid. The exact composition, including the amount of contribution of each constituent chemical is application dependent.
Tanks 108 are employed to separately hold the metal, and the one or more of the complexing agent, the buffer, the pH adjuster and the reducing agent, separately at room temperature. Tanks 108 may be tanks of any type suitable for the particular chemicals.
Corresponding in-line heaters 114 are employed to separately heat the chemicals to an application temperature. The exact temperature is application dependent. In various embodiments, the temperature is in the range of 30 C.-90 C.
System controller 106 is employed to control the operation of system 100. In various embodiments, system controller 106 may be a special purpose or general purpose computing device, provided it has the appropriate input/output interfaces for interfacing with the various tanks 108 and heaters 114. These interfaces may be serial or parallel interfaces of a variety of types.
Thereafter, at 206, the heated metal and the heated one or more of a complexing agent, a buffer, a pH adjuster and a reducing agent are in-line mixed substantially just prior to application to the wafer. Finally, at 208, the near point-of-use mixed plating solution is applied to the wafer.
Referring now to
Chamber 102, tanks 108a and system controller 106 are employed for substantially the same purposes, and similarly constituted as earlier described for the embodiment of
Tanks 108b are employed to separately hold de-ionized (DI) water and a surfactant. In various embodiments, the surfactant may be one of RE 610, Triton X100, polyethers, and polyoxyethylne. In alternate embodiments, electroless plating system 300 may be practiced without the use of surfactant.
In-line heaters 114 are employed to heat the mixture of DI water and the surfactant at an application temperature. The exact temperature is application dependent. In various embodiments, the temperature is in the range of 70 C.-100 C.
The heated DI water (with or without surfactant) is employed to heat the pipe segments, as well as to dilute and heat the plating solution. Resultantly, under this embodiment, plating solution is also anticipated to be more suitable for plating wafer, e,g. containing less particles.
Then, at 406, the chemicals are mixed into an initial relatively more concentrated plating solution, which in turn at 408, is mixed with the DI water (with or without surfactant) to form the final properly diluted, but heated plating solution. The concentration of the initial plating solution, DI water dilution ratio, and so forth are all application dependent. In various embodiments, 1 to 10 parts of the DI water are mixed with 1 part of the initial more concentrated plating solution.
Finally, at 410, the diluted, but heated plating solution is applied to the wafer.
Referring now to
The piping system also includes in particular, configurable valve 112 and first and second routes 110a and 110b coupling chamber 102 and electroanalytical subsystem 104 to valve 112. Further, the piping system includes in-line heaters 114 disposed in between tanks 108b and valve 112, i.e. downstream from tanks 108b, but upstream of valve 112.
Additionally, electroless plating system 100 includes system controller 106, coupled to tanks 118a-118b, electroanalytical system 104, and heaters 114a-114b as shown.
Chamber 102, tanks 108a-108b and system controller 106 are employed for substantially the same purposes, and similarly constituted as earlier described for the embodiment of
Electroanalytical subsystem 104 is employed to perform a qualification analysis to qualify the final plating solution before allowing the plating solution to be applied to a wafer in chamber 102. In various embodiments, electroanalytical subsystem 104 includes a number of modules to perform one or more electroanalysis of reaction kinetics. In various embodiments, electroanalytical subsystem 104 may include one or more electroanalysis modules for performing electroanalysis for adsorption, nucleation, and deposition rates, pH balances, as well as particles generation count.
More specifically, in various embodiments, electroanalytical subsystem 104 may include
Each of these modules may be implemented with any one of a number of these modules available from manufacturers such as, QCM Research of Saddleback Valley of CA, Radiometer Analytical SAS of Lyon, France, and so forth.
In alternate embodiments, electronanalytical subsystem 104 may be implemented with more or fewer electroanalysis modules.
Valve 112 of the piping system is advantageously employed to selectively route the plating solution, via route 11Oa, to electroanalytical subsystem 104 for qualification analysis, and via route 110b to chamber 102 for application, after the plating solution has been qualified by the qualification analysis. In various embodiments, valve 112 may be implemented employing any one of a number of valves of the electronic type. In other embodiments, other controllable or configurable valves may also be employed.
For the illustrated embodiment, system controller 106 is further employed to analyze the results of the qualification analyses performed by electroanalytical subsystem 104. In various embodiments, system controller 106 compares the results of the electroanalytical analyses, i.e. QCM, OCP and other measurements, with a number of thresholds/limits. In various embodiments, these thresholds and/or limits are pre-provided to system controller 106. The threshold and/or limits are application dependent, depending on the electroless plating desired for a wafer, and they may be empirically determined.
In various embodiments, system controller 106 stops tanks 108a-108b from further supplying the plating solution, if not all of the thresholds and limits are met. In other embodiments, system controller 106 may be equipped to adjust the chemicals, water and/or surfactant supplied by tanks 108a-108b, and/or the amount of heat supplied by heater 114, if not all of the thresholds and limits are met, but the failing metrics are within certain tolerance levels. Just like the threshold and limits, the tolerance levels are application dependent, and may be empirically determined.
In alternate embodiments, the plating solution to be qualified may be formed employing tanks 108 and corresponding in-line heaters 114, configured as shown in
Thus, it can be seen from the above descriptions, a novel electroless plating system and method have been described. While the present invention has been described in terms of the foregoing embodiments, those skilled in the art will recognize that the invention is not limited to the embodiments described. The present invention can be practiced with modification and alteration within the spirit and scope of the appended claims. For example, the chemicals may be delivered in bulk in part or in entirety.
Thus, the description is to be regarded as illustrative instead of restrictive on the present invention.
