Claims
- 1. A method comprising:
forming a fluid-conducting channel in an element of an integrated circuit package to couple to a surface of a die.
- 2. The method recited in claim 1 wherein, in forming, the element comprises a heat spreader.
- 3. The method recited in claim 2 wherein, in forming, the heat spreader comprises material selected from the group consisting of copper, copper alloys including copper alloys with tungsten, copper laminates, molybdenum, molybdenum laminates, molybdenum alloys, aluminum, aluminum alloys including metallized aluminum nitride, beryllium oxide, diamond, and ceramic.
- 4. The method recited in claim 1 wherein, in forming, the die to which the element is to be coupled comprises a processor.
- 5. The method recited in claim 1 wherein, in forming, the channel makes a serpentine path from a first side of the heat spreader to a second side of the heat spreader.
- 6. The method recited in claim 5 wherein, in forming, the die to which the element is to be coupled does not overlap the entire channel, the method further comprising:
forming at least one core element to overlap a portion of the channel not overlapped by the die.
- 7. The method recited in claim 6 wherein, in forming, the core element comprises material selected from the group consisting of a plastic, a metal, and a ceramic.
- 8. The method recited in claim 1 and further comprising:
coupling a thin thermal interface material to the element.
- 9. The method recited in claim 8 and further comprising:
coupling the die to the thin thermal interface material.
- 10. The method recited in claim 1 wherein, in forming, the die to which the element is to be coupled overlaps the entire channel.
- 11. The method recited in claim 1 wherein, in forming, the channel is formed in a surface of the element.
- 12. The method recited in claim 1 wherein forming includes:
forming the channel in a surface of the element; filling the channel with a filler material; polishing the surface; and removing the filler material.
- 13. The method recited in claim 1 wherein, in forming, the channel is formed in the interior of the element.
- 14. The method recited in claim 1 wherein, in forming, the die to which the element is to be coupled has a thickness not exceeding 100 μm.
- 15. A package comprising:
a heat spreader having a channel therein to conduct a fluid; and a thinned semiconductor die coupled to a surface of the heat spreader.
- 16. The package recited in claim 15, wherein the die comprises a processor.
- 17. The package recited in claim 15, wherein the die has a thickness in the range of 20-300 μm.
- 18. The package recited in claim 15, wherein the die has a thickness not exceeding 100 μm.
- 19. The package recited in claim 15 and further comprising a thinned thermal interface material between the die and the heat spreader.
- 20. The package recited in claim 19, wherein the thermal interface material comprises solder having a melting temperature above 260 degrees Centigrade and a tensile strength of at least 4000 pounds per square inch.
- 21. The package recited in claim 20, wherein the thermal interface material comprises an alloy of gold, tin, and nickel.
- 22. The package recited in claim 19, wherein the thermal interface material has a thickness in the range of 1 to 100 μm.
- 23. The package recited in claim 15, wherein the beat spreader comprises material selected from the group consisting of copper, copper alloys including copper alloys with tungsten, copper laminates, molybdenum, molybdenum laminates, molybdenum alloys, aluminum, aluminum alloys including metallized aluminum nitride, beryllium oxide, diamond, and ceramic.
- 24. The package recited in claim 15, wherein the channel has a width in the range of 20 to 1000 μm.
- 25. The package recited in claim 15, wherein the fluid comprises a two-phase fluid.
- 26. An electronic assembly comprising:
an integrated circuit package including
a heat spreader having a channel therein to conduct a fluid; and a thinned semiconductor die coupled to a surface of the heat spreader; and a pump coupled to the channel to circulate a fluid therein.
- 27. The electronic assembly recited in claim 26, wherein the pump is one of an electro-kinetic micropump, an electro-osmotic pump, a capillary pump, or a mechanical pump.
- 28. The electronic assembly recited in claim 26, wherein the pump is integrated into the heat spreader.
- 29. An electronic system comprising:
a bus coupling components in the electronic system; a display coupled to the bus; an external memory coupled to the bus; a processor coupled to the bus and having an electronic assembly including at least one integrated circuit package having
a heat spreader having a channel therein to conduct a fluid; and a thinned semiconductor die coupled to a surface of the heat spreader; and a pump coupled to the channel to circulate a fluid therein.
- 30. The electronic system recited in claim 29, wherein the pump is one of an electro-kinetic micropump, an electro-osmotic pump, a capillary pump, or a mechanical pump.
- 31. The electronic system recited in claim 29, wherein the external memory comprises dynamic random access memory integrated circuits.
RELATED APPLICATION
[0001] This application is related to the following application, which is assigned to the same assignee as the present application:
[0002] (1) Ser. No. _/______, entitled “Thinned Die Integrated Circuit Package”.