Claims
- 1. An electronic memory device comprising:
electrically programmable memory cells; an address bus for addressing said memory cells; a controllable programming voltage pump for producing a programming voltage for said memory cells; and a switching device configured for actuation in a test mode by a test mode signal and for connecting said address bus to said programming voltage pump in the test mode such that the programming voltage can be set to a predetermined test programming voltage using address bits supplied on said address bus.
- 2. The electronic memory device according to claim 1, wherein the predetermined test programming voltage is a voltage at which said memory cells, in a fault-free state, are just short of being re-programmable.
- 3. The electronic memory device according to claim 1, comprising an EEPROM array formed by said memory cells.
- 4. The electronic memory device according to claim 1, wherein the predetermined test programming voltage can be set in the test mode using a programming command.
- 5. The electronic memory device according to claim 1, wherein said switching device is a multiplexer.
- 6. The electronic memory device according to claim 1, wherein said programming voltage pump is a regulated voltage pump, and a nominal variable for the predetermined test programming voltage can be prescribed in the test mode using the address bits.
- 7. The electronic memory device according to claim 1, wherein the address bits supplied in the test mode are stored in the memory device as a component part of one or more test programming commands and can be executed as required.
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This is a continuation of copending international application PCT/DE98/01738, filed Jun. 24, 1998, which designated the United States.
Continuations (1)
|
Number |
Date |
Country |
Parent |
PCT/DE98/01738 |
Jun 1998 |
US |
Child |
09748473 |
Dec 2000 |
US |