Claims
- 1. An electrophotographic image-forming member which comprises a substrate for electrophotography and a light receiving layer being disposed on said substrate, said light receiving layer comprising a photoconductive layer formed of a non-single-crystal carbide film containing silicon atoms as a matrix, carbon atoms in an amount of 5 to 15 atomic % and hydrogen atoms in an amount in a proportion of 1% or less per unit volume and having an intensity ratio of 0.01 to 0.05 between the C--H bond stretching mode and the Si--H bond stretching mode in an infrared absorption spectrum.
- 2. An electrophotographic image-forming member according to claim 1, wherein said light receiving layer further comprises a charge injection inhibition layer being disposed between said substrate and said photoconductive layer.
- 3. An electrophotographic image-forming member according to claim 2, wherein said charge injection inhibition layer is formed of a doped non-single-crystal silicon-containing film selected from the group consisting of a doped non-single-crystal hydrogenated silicon film, a doped non-single-crystal silicon oxide film, a doped non-single-crystal silicon nitride film and a doped non-single-crystal silicon carbide film.
- 4. An electrophotographic image-forming member according to claim 2, wherein said charge injection inhibition layer is formed of a doped non-single-crystal silicon carbide film containing silicon atoms as a matrix, carbon atoms in an amount of 5 to 15 atomic % and hydrogen atoms in an amount of 1 to 10 atomic %, containing graphite structure domains in a proportion of 1% or less per unit volume and having an intensity ratio of 0.01 to 0.05 between the C--H bond stretching mode and the Si--H bond stretching mode in an infrared absorption spectrum.
- 5. An electrophotographic image-forming member according to claim 4, wherein said doped non-single-crystal silicon carbide film contains atoms of an element of the group III elements and the group V elements of the Periodic Table.
- 6. An electrophotographic image-forming member according to claim 1, wherein said light receiving layer further comprises a surface layer being disposed on said photoconductive layer.
- 7. An electrophotographic image-forming member according to claim 6, wherein said surface layer is formed of a non-single-crystal silicon carbide film containing silicon atoms as a matrix, carbon atoms in an amount of 20 to 40 atomic % and hydrogen atoms in an amount of 50 to 70 atomic and containing graphite structure domains in a proportion of 1% or less per unit volume.
- 8. An electrophotographic image-forming member according to claim 7, wherein the light receiving layer further comprises a charge injection inhibition layer being disposed between the substrate and the photoconductive layer.
- 9. An electrophotographic image-forming member according to claim 8, wherein said charge injection inhibition layer is formed of a doped non-single-crystal silicon-containing film selected from the group consisting of a doped non-single-crystal hydrogenated silicon film, a doped non-single-crystal silicon oxide film, a doped non-single-crystal silicon nitride film and a doped non-single-crystal silicon carbide film.
- 10. An electrophotographic image-forming member according to claim 8, wherein said charge injection inhibition layer is formed of a doped non-single-crystal silicon carbide film containing silicon atoms as a matrix, carbon atoms in an amount of 5 to 15 atomic % and hydrogen atoms in an amount of 1 to 10 atomic %, containing graphite structure domains in a proportion of 1% or less per unit volume and having an intensity ratio of 0.01 to 0.05 between the C--H bond stretching mode and the Si--H bond stretching mode in an infrared absorption spectrum.
- 11. An electrophotographic image-forming member according to claim 10, wherein said doped non-single-crystal silicon carbide film contains atoms of an element of the group III elements and the group V elements of the Periodic Table.
- 12. An electrophotographic image-forming member according to claim 1, wherein said non-single-crystal silicon carbide film contains atoms of an element selected from the group consisting of the group III elements and the group V element of the Periodic Table.
- 13. An electrophotographic image-forming member according to claim 12, wherein the light receiving layer further comprises a charge injection inhibition layer being disposed between the substrate and the photoconductive layer.
- 14. An electrophotographic image-forming member according to claim 13, wherein said charge injection inhibition layer is formed of a doped non-single-crystal silicon-containing film selected from the group consisting of a doped non-single-crystal hydrogenated silicon film, a doped non-single-crystal silicon oxide film, a doped non-single-crystal silicon nitride film and a doped non-single-crystal silicon carbide film.
- 15. An electrophotographic image-forming member according to claim 13, wherein said charge injection inhibition layer is formed of a doped non-single-crystal silicon carbide film containing silicon atoms as a matrix, carbon atoms in an amount of 5 to 15 atomic % and hydrogen atoms in an amount of 1 to 10 atomic %, containing graphite structure domains in a proportion of 1% or less per unit volume and having an intensity ratio of 0.01 to 0.05 between the C--H bond stretching mode and the Si--H bond stretching mode in an infrared absorption spectrum.
- 16. An electrophotographic image-forming member according to claim 15, wherein said doped non-single-crystal silicon carbide film contains atoms of an element of the group III elements and the group V elements of the Periodic Table.
- 17. An electrophotographic image-forming member according to claim 12, wherein a surface layer being disposed on said photoconductive layer.
- 18. An electrophotographic image-forming member according to claim 17, wherein said surface layer is formed of a non-single-crystal silicon carbide film containing silicon atoms as a matrix, carbon atoms in an amount of 20 to 40 atomic % and hydrogen atoms in an amount of 50 to 70 atomic and containing graphite structure domains in a proportion of 1% or less per unit volume.
- 19. An electrophotographic image-forming member according to claim 18, wherein the light receiving layer further comprises a charge injection inhibition layer being disposed between the substrate and the photoconductive layer.
- 20. An electrophotographic image-forming member according to claim 19, wherein said charge injection inhibition layer is formed of a doped non-single-crystal silicon-containing film selected from the group consisting of a doped non-single-crystal hydrogenated silicon film, a doped non-single-crystal silicon oxide film, a doped non-single-crystal silicon nitride film and a doped non-single-crystal silicon carbide film.
- 21. An electrophotographic image-forming member according to claim 19, wherein said charge injection inhibition layer is formed of a doped non-single-crystal silicon carbide film containing silicon atoms as a matrix, carbon atoms in an amount of 5 to 15 atomic % and hydrogen atoms in an amount of 1 to 10 atomic %, containing graphite structure domains in a proportion of 1% or less per unit volume and having an intensity ratio of 0.01 to 0.05 between the C--H bond stretching mode and the Si--H bond stretching mode in an infrared absorption spectrum.
- 22. An electrophotographic image-forming member according to claim 21, wherein said doped non-single-crystal silicon carbide film contains atoms of an element of the group III elements and the group V elements of the Periodic Table.
- 23. An electrophotographic image-forming process comprising the steps of:
- (a) applying an electric field to the electrophotographic image-forming member of claim 1: and
- (b) applying an electromagentic wave to said electrophotographic image-forming member thereby forming an electrostatic image.
Priority Claims (3)
Number |
Date |
Country |
Kind |
63-203831 |
Aug 1988 |
JPX |
|
63-203832 |
Aug 1988 |
JPX |
|
63-203833 |
Aug 1988 |
JPX |
|
Parent Case Info
This application is a continuation of application Ser. No. 07/393,961 filed Aug. 15, 1989, now abandoned.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
4882252 |
Kawamura |
Nov 1989 |
|
Continuations (1)
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Number |
Date |
Country |
Parent |
393961 |
Aug 1989 |
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