Claims
- 1. An electrophotographic image forming member characterized in comprising: a substrate, and a photoconductive layer comprising an amorphous material containing therein silicon atom as the matrix and halogen atom as the constituent atom, wherein the content of said halogen atom ranges from 1 to 40 atomic percent.
- 2. The image forming member as set forth in claim 1, wherein said halogen atom is fluorine.
- 3. The image forming member as set forth in claim 1, wherein said halogen atom is chlorine.
- 4. The image forming member as set forth in claim 1, wherein said photoconductive layer is formed by vacuum deposition method utilizing electric discharging phenomenon, and by the use of at least one kind of starting material for introducing silicon atom selected from the group consisting of silanes, halogenated silicons, and halogen-substituted hydrogenated silicons, all being in a gaseous state or in a readily gassifiable state, and at least one kind of starting material for introducing halogen atom selected from the group consisting of halogenated silicons, halogen-substituted hydrogenated silicons, halogens, inter-halogen compounds, halogenated carbon compounds, and halogen-substituted paraffin type hydrocarbons.
- 5. The image forming member as set forth in claim 4, wherein said silanes are SiH.sub.4, Si.sub.2 H.sub.6, Si.sub.3 H.sub.8 or Si.sub.4 H.sub.10.
- 6. The image forming member as set forth in claim 4, wherein said halogenated silicons are SiF.sub.4, Si.sub.2 F.sub.6, SiCl.sub.4, SiBr.sub.4, SiCl.sub.3 Br, SiCl.sub.2 Br.sub.2 or SiCl.sub.3 I.
- 7. The image forming member as set forth in claim 4, wherein said halogen-substituted hydrogenated silicons are SiH.sub.2 F.sub.2, SiH.sub.2 Cl.sub.2, SiHCl.sub.3, SiH.sub.2 Br.sub.2 or SiHBr.sub.3.
- 8. The image forming member as set forth in claim 4, wherein said halogens are F.sub.2, Cl.sub.2, Br.sub.2 or I.sub.2.
- 9. The image forming member as set forth in claim 4, wherein said inter-halogen compounds are BrF, ClF, ClF.sub.3, BrF.sub.5, BrF.sub.3, IF.sub.7, IF.sub.5, ICl or IBr.
- 10. The image forming member as set forth in claim 4, wherein said halogenated carbon compounds are CF.sub.4, C.sub.2 F.sub.6, C.sub.3 F.sub.8, i-C.sub.4 F.sub.10, C.sub.2 F.sub.4, CCl.sub.4, or CBr.sub.4.
- 11. The image forming member as set forth in claim 4, wherein said halogen-substituted paraffin type hydrocarbons are CHF.sub.3, CH.sub.2 F.sub.2, CH.sub.3 F, CH.sub.3 Cl, CH.sub.3 Br, CH.sub.3 I, or C.sub.2 H.sub.5 Cl.
- 12. The image forming member as set forth in claim 1, wherein said photoconductive layer contains therein, as an impurity, an atom belonging to the Group III-A in the Periodic Table in an amount of from 10.sup.-6 to 10.sup.-3 atomic %.
- 13. The image forming member as set forth in claim 1, wherein said photoconductive layer contains therein, as an impurity, an atom belonging to the Group V-A in the Periodic Table in an amount of from 10.sup.-8 to 10.sup.-3 atomic %.
- 14. The image forming member as set forth in claim 1, wherein thickness of said photoconductive layer ranges from 1 to 70 microns.
- 15. The image forming member as set forth in claim 1, wherein said photoconductive layer contains therein, as an impurity, an atom belonging to the Group III-A in the Periodic Table.
- 16. The image forming member as set forth in claim 1, wherein said photoconductive layer contains therein, as an impurity, an atom belonging to the Group V-A in the Periodic Table.
- 17. An electrophotographic image forming member characterized in comprising a substrate, and a photoconductive layer comprising an amorphous material containing therein silicon atom as the matrix and halogen atom as the constituent atom, wherein said photoconductive layer is doped with an impurity wherein the content of said halogen atom ranges from 1 to 40 atomic percent.
- 18. The image forming member as set forth in claim 17, in which said impurity is at least one element selected from the group consisting of elements of Group III of the Periodic Table.
- 19. The image forming member as set forth in claim 18, in which said elements of Group III are B, Al, Ga, In or Tl.
- 20. The image forming member as set forth in claim 17, in which said impurity is at least one element selected from the group consisting of elements of Group V of the Periodic Table.
- 21. The image forming member as set forth in claim 20, in which said elements of the Group V are N, P, As, Sb or Bi.
- 22. The image forming member as set forth in claim 1, in which said photoconductive layer is doped with an impurity.
- 23. The image forming member as set forth in claim 15, in which said elements of Group III are B, Al, Ga, In and Tl.
- 24. The image forming member as set forth in claim 16, in which said elements of Group V are N, P, As, Sb and Bi.
- 25. The electrophotographic image forming member according to claim 17 in which said halogen atom is in effective amounts to provide a gamma value close to 1, enhanced dark sensitivity and sufficient visible light responsiveness to generate electrostatic images adapted to yield clear toner images on development.
- 26. An electrophotographic image forming member characterized in comprising: a substrate, and a photoconductive layer comprising an amorphous material containing therein silicon atom as the matrix and, as the constituents, halogen atom and hydrogen atom, wherein the total quantity of said halogen atom and said hydrogen atom is 1-40 atomic %.
- 27. The image forming member as set forth in claim 26, wherein said photoconductive layer is doped with an impurity.
- 28. The image forming member as set forth in claim 27, wherein said impurity is at least one element selected from the group consisting of elements of Group III of the Periodic Table.
- 29. The image forming member as set forth in claim 28, wherein said elements of Group III are B, Al, Ga, In or Tl.
- 30. The image forming member as set forth in claim 27, wherein said impurity is at least one element selected from the group consisting of elements of Group V of the Periodic Table.
- 31. The image forming member as set forth in claim 30, wherein said elements of Group V are N, P, As, Sb or Bi.
- 32. The image forming member as set forth in claim 26, wherein the content of said hydrogen is twice or less than that of said halogen.
- 33. The image forming member as set forth in claim 26, further comprising a barrier layer which is interposed between said substrate and said photoconductive layer.
- 34. The image forming member as set forth in claim 1 or 26, wherein said photoconductive layer has a depletion layer.
- 35. The image forming member as set forth in claim 1 or 26, wherein said photoconductive layer has two layer regions of different polarity.
- 36. The image forming member as set forth in claim 35, wherein one of said two layer regions is doped with an impurity.
- 37. The image forming member as set forth in claim 36, wherein said impurity is at least one element selected from the group consisting of elements of Group III of the Periodic Table.
- 38. The image forming member as set forth in claim 37, wherein said elements of Group III are B, Al, Ga, In or Tl.
- 39. The image forming member as set forth in claim 36, wherein said impurity is at least one element selected from the group consisting of elements of Group V of the Periodic Table.
- 40. The image forming member as set forth in claim 39, wherein said elements of Group V are N, P, As, Sb or Bi.
- 41. An electrophotographic image forming member characterized in comprising: a substrate; a layer comprising a first layer region comprising an amorphous material containing therein silicon atom as the matrix and, as the constituents, halogen atom and hydrogen atom, the total quantity of both atoms being from one to 40 atomic %, and a second layer region comprising an amorphous material containing therein silicon as the matrix and halogen atom or hydrogen atom as the constituent atom in an amount of from one to 40 atomic %.
- 42. An electrophotographic image forming member characterized in comprising: a substrate; a layer comprising a first layer region comprising an amorphous material containing therein silicon atom as the matrix and halogen atom as the constituent atom in an amount of one to 40 atomic %, and a second layer region comprising an amorphous material containing silicon atom as the matrix and hydrogen atom as the constituent atom in an amount of from one to 40 atomic %.
- 43. The image forming member as set forth in claim 41 or 42, wherein said first layer region is of p-type.
- 44. The image forming member as set forth in claim 41, or 42, wherein said second layer region is of n-type.
- 45. The image forming member as set forth in claim 41 or 42, wherein said first layer region is doped with an impurity.
- 46. The image forming member as set forth in claim 45, wherein said impurity is at least one element selected from the group consisting of elements of Group III of the Periodic Table.
- 47. The image forming member as set forth in claim 46, wherein said elements of Group III are B, Al, Ga, In or Tl.
- 48. The image forming member as set forth in claim 45, wherein said impurity is at least one element selected from the group consisting of elements of Group V of the Periodic Table.
- 49. The image forming member as set forth in claim 48, wherein said elements of Group V are N, P, As, Sb or Bi.
- 50. The image forming member as set forth in claim 41 or 42, wherein said second layer region is doped with an impurity.
- 51. The image forming member as set forth in claim 50, wherein said impurity is at least one element selected from the group consisting of elements of Group III of the Periodic Table.
- 52. The image forming member as set forth in claim 51, wherein said elements of Group III are B, Al, Ga, In or Tl.
- 53. The image forming member as set forth in claim 50, wherein said impurity is at least one element selected from the group consisting of elements of Group V of the Periodic Table.
- 54. The image forming member as set forth in claim 50, wherein said elements of Group V are N, P, As, Sb or Bi.
- 55. The image forming member as set forth in claim 41, wherein the content of said hydrogen contained in the first layer is twice or less than that of said halogen contained in the first layer.
- 56. The image forming member as set forth in claim 41 or 42, further comprising a barrier layer.
- 57. The electrophotographic image forming member according to claim 26 in which the atomic ratio of hydrogen to halogen is no greater than 2:1.
- 58. The image forming member as set forth in any one of claims 41 or 42 wherein said first layer region is of p-type and said second layer region is of n-type.
- 59. The image forming member as set forth in any one of claims 41 or 42, wherein said first layer region is of n-type, and said second layer region is of p-type.
- 60. The image forming member as set forth in any one of claims 41 or 42, wherein said layer is formed by vacuum deposition method utilizing electric discharging phenomenon, and by the use of at least one kind of starting material for introducing silicon atom selected from the group consisting of silanes, halogenated silicons, and halogen-substituted hydrogenated silicons, all being in a gaseous state or in a readily gassifiable state, and at least one kind of starting material for introducing halogen atom selected from the group consisting of halogenated silicon, halogen-substituted hydrogenated silicons, halogens, inter-halogen compounds, halogenated carbon compounds, and halogen-substituted paraffin type hydrocarbons, all being in a gaseous state or in a readily gassifiable state.
- 61. The image forming member as set forth in claim 60, wherein said silanes are SiH.sub.4, Si.sub.2 H.sub.6, Si.sub.3 H.sub.8, or Si.sub.4 H.sub.10.
- 62. The image forming member as set forth in claim 60, wherein said halogenated silicons are SiF.sub.4, Si.sub.2 F.sub.6, SiCl.sub.4, SiBr.sub.4, SiCl.sub.3 Br, SiCl.sub.2 Br.sub.2, SiClBr.sub.3, or SiCl.sub.3 I.
- 63. The image forming member as set forth in claim 60, wherein said halogen-substituted halogenates silicons are SiH.sub.2 F.sub.2, SiH.sub.2 Cl.sub.2, SiHCl.sub.3, SiH.sub.2 Br.sub.2, or SiHBr.sub.3.
- 64. The image forming member as set forth in claim 60, wherein said halogens are F.sub.2, Cl.sub.2, Br.sub.2, or I.sub.2.
- 65. The image forming member as set forth in claim 60, wherein said inter-halogen compounds are BrF, ClF, ClF.sub.3, BrF.sub.5, BrF.sub.3, IF.sub.7, IF.sub.5, ICl, or IBr.
- 66. The image forming member as set forth in claim 60, wherein said halogenated carbon compounds are CF.sub.4, C.sub.2 F.sub.6, C.sub.3 F.sub.8, C.sub.4 F.sub.8, i-C.sub.4 F.sub.10, C.sub.2 F.sub.4, CCl.sub.4, or CBr.sub.4.
- 67. The image forming member as set forth in claim 60, wherein said halogen-substituted paraffin type hydrocarbons are CHF.sub.3, CH.sub.2 F.sub.2, CH.sub.3 F, CH.sub.3 Cl, CH.sub.3 Br, CH.sub.3 I, or C.sub.2 H.sub.5 Cl.
- 68. The image forming member as set forth in any one of claims 41 or 42, wherein said layer contains therein, as an impurity, an atom belonging to the Group III-A in the Periodic Table in an amount of from 10.sup.-6 to 10.sup.-3 atomic %.
- 69. The image forming member as set forth in any one of claims 41 or 42 wherein said layer contains therein, as an impurity, an atom belonging to the Group V-A in the Periodic Table in an amount of from 10.sup.-8 to 10.sup.-3 atomic %.
- 70. The image forming member as -et forth in any one of claims 41 or 42 wherein thickness of said layer ranges from 1 to 70 microns.
- 71. The image forming member as set forth in claim 60 wherein said photoconductive layer contains therein, as an impurity, an atom belonging to the Group III-A in the Periodic Table.
- 72. The image forming member as set forth in claim 60 wherein said photoconductive layer contains therein, as an impurity, an atom belonging to the Group V-A in the Periodic Table.
Priority Claims (2)
Number |
Date |
Country |
Kind |
54-161872 |
Dec 1979 |
JPX |
|
54-169576 |
Dec 1979 |
JPX |
|
Parent Case Info
This application is a continuation of application Ser. No. 08/029,300, filed Mar. 8, 1993, now abandoned; which in turn, is a continuation application Ser. No. 07/819,640, filed Jan. 10, 1992, now abandoned; which in turn, is a continuation of application Ser. No. 07/701,017, filed May 13, 1991, now abandoned; which in turn, is a continuation of application Ser. No. 569,387, filed Aug. 15, 1990, now abandoned; which in turn, is a continuation of application Ser. No. 442,411, filed Nov. 22, 1989, now abandoned; which in turn, is a continuation of application Ser. No. 339,885, filed Apr. 18, 1989, now abandoned; which in turn, is a continuation of application Ser. No. 102,763, filed Sep. 24, 1989, now abandoned; which in turn, is a continuation of application Ser. No. 886,944, filed Jul. 22, 1986, now abandoned; which in turn, is a continuation of application Ser. No. 674,711, filed Nov. 26, 1984, now abandoned; which in turn is a continuation of application Ser. No. 457,696 , filed Jan. 13, 1983, now abandoned; which in turn is a continuation of application Ser. No. 216,280, filed Dec. 15, 1980, now abandoned.
US Referenced Citations (3)
Number |
Name |
Date |
Kind |
4226898 |
Ovshinsky et al. |
Oct 1980 |
|
4265991 |
Hirai et al. |
May 1981 |
|
4359512 |
Fukuda et al. |
Nov 1982 |
|
Continuations (11)
|
Number |
Date |
Country |
Parent |
29300 |
Mar 1993 |
|
Parent |
819640 |
Jan 1992 |
|
Parent |
701017 |
May 1991 |
|
Parent |
569387 |
Aug 1990 |
|
Parent |
442411 |
Nov 1989 |
|
Parent |
339885 |
Apr 1989 |
|
Parent |
102763 |
Sep 1989 |
|
Parent |
886944 |
Jul 1986 |
|
Parent |
674711 |
Nov 1984 |
|
Parent |
457696 |
Jan 1983 |
|
Parent |
216280 |
Dec 1980 |
|