Claims
- 1. A process for producing an electrophotographic light-receiving member comprising a conductive support and a light-receiving member having a photoconductive layer formed on the surface of the conductive support and composed of a non-single crystal material containing silicon atoms as a main component and hydrogen atoms and/or halogen atoms, said process comprising: vacuum depositing said photoconductive layer in an apparatus which includes a reactor provided with a substrate and a discharge space, a raw material supply device and a RF power source under high frequency plasma vapor deposition (RF-PCVD) conditions in which the flow rate (X) sccm of a Si supply gas and a discharge space volume (Z) cm3 satisfy the following relation (A) and a flow rate (X) sccm of the Si supply gas and density (Y) W/cm3 of the electric power input to the discharge space satisfy the following relation (B)3×10−3≦X/Z≦1×10−2 (A) 3×10−4≦Y/X≦7×10−4 (B).
- 2. A process for producing an electrophotographic light-receiving member according to claim 1, comprising forming said photoconductive layer under conditions in that the flow rate (X) sccm of the Si supply gas and the density (Y) W/cm−3 of the electric power input to a discharge space satsify the following relation (C)4×10−4≦Y/X≦6×10−4 (C).
Priority Claims (2)
Number |
Date |
Country |
Kind |
7/350769 |
Dec 1995 |
JP |
|
8/337662 |
Dec 1996 |
JP |
|
Parent Case Info
This application is a division of application Ser. No. 08/780,006, filed on Dec. 23, 1996 abandoned.
US Referenced Citations (15)
Foreign Referenced Citations (4)
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57 115556 |
Jul 1982 |
JP |
60 067951 |
Apr 1985 |
JP |
60 95551 |
May 1985 |
JP |
62 083470 |
Apr 1987 |
JP |