ELECTROSTATIC CHUCK, DEPOSITION APPARATUS INCLUDING THE SAME, AND DISPLAY PANEL FABRICATED USING THE SAME

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application claims priority to and benefits of Korean Patent Application No. 10-2023-0047423 under 35 U.S.C. § 119 filed on Apr. 11, 2023, in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference.

BACKGROUND
1. Technical Field

The disclosure relates to an electrostatic chuck, a deposition apparatus including the same, and a display panel fabricated using the same.

2. Description of the Related Art

Display devices become more and more important as multimedia technology evolves. Accordingly, a variety of display devices such as liquid-crystal display devices (LCDs) and organic light-emitting diode display devices (OLEDs) are currently being developed.

Such a display device may include a display panel to provide visual information such as images or video to a user. To form such a display panel, layers of the display panel may be formed by a variety of methods. In doing so, a method for forming the layers may include a deposition process, a photomask process, etc.

In a deposition method, to perform a deposition process by vaporizing a deposition material and spraying it, a deposition source is disposed below, a mask is placed above the deposition source, and a substrate is disposed on the mask so that the deposition material passing through the mask is deposited on the substrate. In doing so, the distance between the mask and the substrate may determine the precision of a deposition material pattern deposited on the substrate. By way of example, the deposition material pattern is a very important issue for the resolution and performance of a display unit, and can determine the quality of the product.

For example, if the mask and the substrate are not in tight contact with each other during the deposition process, the deposition material may be deposited on an undesired zone on the substrate, for example, a dead zone, resulting in display defects. This phenomenon is called a shadow effect. In order to fabricate a high-resolution display device, it is necessary to reduce or eliminate such a shadow effect. Therefore, in order to reduce or eliminate the shadow phenomenon, it is required to improve adhesion between the substrate and the mask.

In order to reduce display defects, it is necessary to dispose the substrate flat. A substrate deflects in a direction toward a deposition source due to its own weight. If a deposition process is carried out on the deflected substrate, the substrate and the mask are not properly adhered to each other, and accordingly it is highly likely that the deposition material is deposited on the dead zone of the substrate. As a result, the display defect rate also increases.

In order to dispose the substrate flat, an electrostatic chuck and a tension device for tensioning the electrostatic chuck may be disposed. The electrostatic chuck is a member that attaches a substrate using electrostatic force. The tension device tensions the electrostatic chuck to thereby tension the substrate attached to the electrostatic chuck.

It is to be understood that this background of the technology section is, in part, intended to provide useful background for understanding the technology. However, this background of the technology section may also include ideas, concepts, or recognitions that were not part of what was known or appreciated by those skilled in the pertinent art prior to a corresponding effective filing date of the subject matter disclosed herein.

SUMMARY

Aspects of the disclosure provide an electrostatic chuck and a deposition apparatus that suppresses the deflection of the electrostatic chuck.

Aspects of the disclosure also provide a deposition apparatus that fabricates a display panel with suppressed shadow phenomenon by improving the accuracy of the deposition process.

It should be noted that objects of the disclosure are not limited to the above-mentioned objects, and other objects will be apparent to those skilled in the art from the following descriptions.

According to an aspect of the disclosure, there is provided an electrostatic chuck that may include a body; and a tension assist device disposed at a border of the body, wherein the tension assist device may include a stepped portion disposed on a side of the body, and an end of the stepped portion is disposed higher than an upper surface of the body.

In an embodiment, the tension assist device may further include a recessed portion to which the body is inserted, and a coupling portion overlapping the recessed portion and fixing the tension assist device to the body, and wherein the stepped portion is disposed on a side of the recessed portion and the coupling portion.

In an embodiment, an angle formed between an extension direction of the stepped portion and an extension direction of the coupling portion may be less than about 180 degrees.

In an embodiment, the tension assist device may further include an auxiliary end disposed on a side of the stepped portion and disposed on an opposite side of the coupling portion with the stepped portion disposed between the auxiliary end and the coupling portion.

In an embodiment, an extension direction of the auxiliary end may be parallel to an extension direction of the coupling portion.

In an embodiment, an extension direction of a side surface of an end of the auxiliary end may be parallel to an extension direction of a side surface of an end of the body.

In an embodiment, the body may include a first base and a second base facing each other, an electrode pattern disposed between the first base and the second base, and an insulating film disposed between the first base and the second base and surrounding the electrode pattern, and wherein the first base and the second base directly contact with the coupling portion.

In an embodiment, the body may include a plurality of sides surrounding the border, and wherein the tension assist device is disposed at a point closest to a center of gravity of the body on each of the plurality of sides.

In an embodiment, the body may include a first side and a second side extended in a first direction and facing each other, and a third side and a fourth side extended in a second direction different from the first direction and facing each other, and wherein the tension assist device is disposed at a center of each of the first side, the second side, the third side, and the fourth side.

In an embodiment, the body may include at least one groove recessed in a thickness direction of the body.

In an embodiment, the at least one groove may include a plurality of grooves extended in a first direction and disposed in a second direction different from the first direction.

In an embodiment, the at least one groove may include a single groove extended in a first direction and a second direction different from the first direction.

In an embodiment, the groove may be disposed adjacent to a center of gravity of the body.

According to an aspect of the disclosure, there is provided a deposition apparatus that may include a chamber; an electrostatic chuck disposed in the chamber; and a tension part that tensions the electrostatic chuck, wherein the electrostatic chuck including, a body, and a tension assist device disposed at a border of the body, wherein the tension assist device may include a stepped portion disposed on a side of the body, and an end of the stepped portion is disposed higher than an upper surface of the body.

In an embodiment, the tension assist device may further include a recessed portion to which the body is inserted, and a coupling portion overlapping the recessed portion and fixing the body, and wherein the stepped portion is disposed on a side of the recessed portion and the coupling portion.

In an embodiment, the tension part may apply a tensile force in an extending direction of the auxiliary end.

In an embodiment, the tension part may include, a presser connected to the auxiliary end providing a tensile force to the electrostatic chuck, and a driver connected to the presser and providing a driving force to the presser.

In an embodiment, the apparatus may further include a first lifting part disposed below the tension unit and elevating the tension part, a second lifting part disposed on a side of the first lifting unit and seating a substrate, a mask holder disposed on a side of the second lifting part and seating a mask, a magnet part disposed above the electrostatic chuck and pressing the substrate against the mask, and a deposition source disposed below the electrostatic chuck and spraying a deposition material.

According to an aspect of the disclosure, there is provided a display panel fabricated using the deposition apparatus according to claim 14, the display panel may include a substrate, a transistor disposed on the substrate, and a light-emitting element disposed on the transistor and electrically connected to the transistor to emit light.

According to an embodiment of the disclosure, it is possible to suppress the deflection of an electrostatic chuck.

According to an embodiment, it is possible to fabricate a display panel with suppressed shadow phenomenon by improving the accuracy of a deposition process.

It should be noted that effects of the disclosure are not limited to those described above and other effects of the disclosure will be apparent to those skilled in the art from the following descriptions.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects and features of the disclosure will become more apparent by describing in detail embodiments thereof with reference to the attached drawings, in which:

FIG. 1 is a schematic cross-sectional view showing a deposition apparatus according to an embodiment.

FIG. 2 is a schematic perspective view showing an electrostatic chuck according to an embodiment.

FIG. 3 is a schematic plan view showing the electrostatic chuck according to an embodiment.

FIG. 4 is a schematic cross-sectional view taken along line X1-X1′ in FIG. 3.

FIG. 5 is a schematic cross-sectional view showing a tension assist device according to an embodiment.

FIG. 6 is a schematic cross-sectional view showing an existing electrostatic chuck in case that it is tensioned.

FIG. 7 is a schematic cross-sectional view showing the electrostatic chuck according to an embodiment in case that it is tensioned.

FIG. 8 is a view illustrating the degree of deflection according to the tensed length of the electrostatic chuck according to an embodiment.

FIG. 9 is a schematic cross-sectional view showing an electrostatic chuck according to an embodiment.

FIG. 10 is a schematic cross-sectional view showing an electrostatic chuck according an embodiment.

FIG. 11 is a schematic cross-sectional view showing an electrostatic chuck according an embodiment.

FIG. 12 is a schematic perspective view showing an electrostatic chuck according to an embodiment.

FIG. 13 is a schematic plan view showing an electrostatic chuck according to an embodiment.

FIG. 14 is a schematic cross-sectional view showing an electrostatic chuck according an embodiment.

FIG. 15 is a schematic cross-sectional view showing an electrostatic chuck according to an embodiment in case that it is tensioned.

FIG. 16 is a view illustrating the degree of deflection according to the tensioned length of the electrostatic chuck according to an embodiment.

FIG. 17 is a schematic plan view showing an electrostatic chuck according to an embodiment.

FIG. 18 is a flowchart for illustrating a method of fabricating a display panel according to an embodiment.

FIG. 19 is a schematic cross-sectional view showing step S100 of FIG. 18.

FIG. 20 is a schematic cross-sectional view showing step S200 of FIG. 18.

FIG. 21 is a schematic cross-sectional view showing step S300 of FIG. 18.

FIG. 22 is a schematic cross-sectional view showing step S400 of FIG. 18.

FIG. 23 is a schematic cross-sectional view showing step S500 of FIG. 18.

FIG. 24 is a schematic cross-sectional view showing step S600 of FIG. 18.

FIG. 25 is a schematic cross-sectional view illustrating an example of a display panel fabricated using the deposition apparatus and the method for fabricating a display panel according to the above-described embodiments.

DETAILED DESCRIPTION OF THE EMBODIMENTS

The disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which embodiments are shown. This disclosure may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

It will also be understood that when a layer is referred to as being “on” another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. The same reference numbers indicate the same components throughout the specification.

In the drawings, sizes, thicknesses, ratios, and dimensions of the elements may be exaggerated for ease of description and for clarity. Like numbers refer to like elements throughout.

As used herein, the singular forms, “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise.

In the specification and the claims, the term “and/or” is intended to include any combination of the terms “and” and “or” for the purpose of its meaning and interpretation. For example, “A and/or B” may be understood to mean “A, B, or A and B.” The terms “and” and “or” may be used in the conjunctive or disjunctive sense and may be understood to be equivalent to “and/or.”

In the specification and the claims, the phrase “at least one of” is intended to include the meaning of “at least one selected from the group of” for the purpose of its meaning and interpretation. For example, “at least one of A and B” may be understood to mean “A, B, or A and B.”

It will be understood that, although the terms first, second, etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element without departing from the scope of the disclosure.

The terms “overlap” or “overlapped” mean that a first object may be above or below or to a side of a second object, and vice versa. Additionally, the term “overlap” may include layer, stack, face or facing, extending over, covering, or partly covering or any other suitable term as would be appreciated and understood by those of ordinary skill in the art.

When an element is described as ‘not overlapping’ or ‘to not overlap’ another element, this may include that the elements are spaced apart from each other, offset from each other, or set aside from each other or any other suitable term as would be appreciated and understood by those of ordinary skill in the art.

The terms “face” and “facing” mean that a first element may directly or indirectly oppose a second element. In a case in which a third element intervenes between the first and second element, the first and second element may be understood as being indirectly opposed to one another, although still facing each other.

The terms “comprises,” “comprising.” “includes,” and/or “including.”, “has,” “have,” and/or “having.” and variations thereof when used in this specification, specify the presence of stated features, integers, steps, operations, elements, components, and/or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.

“About” or “approximately” as used herein is inclusive of the stated value and means within an acceptable range of deviation for the particular value as determined by one of ordinary skill in the art, considering the measurement in question and the error associated with measurement of the particular quantity (i.e., the limitations of the measurement system). For example, “about” may mean within one or more standard deviations, or within +30%, 20%, 10%, 5% of the stated value.

Unless otherwise defined or implied herein, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the disclosure pertains. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

Hereinafter, embodiments of the disclosure will be described in detail with reference to the accompanying drawings.

FIG. 1 is a schematic cross-sectional view showing a deposition apparatus according to an embodiment.

Referring to FIG. 1, a deposition apparatus 100 may include a chamber 110, a pressure adjusting unit (or part) 120, a mask holder 130, an electrostatic chuck 140, a first lifting unit (or part) 150, a second lifting unit (or part) 160, a tension unit (or part) 170, a magnet unit (or part) 180, and a deposition source 190.

The chamber 110 may define an internal space of the deposition apparatus 100. A space may be formed inside the chamber 110, and the pressure inside it may be variable. The pressure adjusting unit 120 may be connected to the chamber 110 to adjust the pressure inside the chamber 110.

The pressure adjusting unit 120 may include a pipe 121 connected to the chamber 110 and a pump 122 installed in the pipe 121. Gas inside the chamber 110 is discharged to the outside through the pipe 121 according to the operation of the pump 122, so that the pressure inside the chamber 110 can be adjusted.

The mask holder 130 may be installed inside the chamber 110 to support a mask M. Although the mask holder 130 is installed inside the chamber 110 and simply supports the mask M in the example shown in FIG. 1, the disclosure is not limited thereto. The mask holder 130 may be installed such that it is linearly movable with respect to the chamber 110. According to an embodiment, the mask M may be, but is not limited to, a fine metal mask.

In case that the mask holder 130 is installed so that it can move linearly with respect to the chamber 110, the mask holder 130 may be connected to a separate lifting device (not shown). For example, the mask holder 130 may include any device or structure that is connected to the mask holder 130 and can provide a driving force to the mask holder 130, such as a motor and a cylinder.

The substrate S may be provided from the outside of the chamber 110 to the inside of the chamber 110 by a robot arm (not shown). The substrate S provided into the chamber 110 may be disposed between the mask M and the electrostatic chuck 140 in the third direction DR3. The substrate S may be disposed on a support 154 of the first lifting unit 150. After the substrate S is attached to the electrostatic chuck 140, it is aligned with the mask M by an aligning device (not shown). The alignment between the mask M and the substrate S may be carried out whenever necessary throughout the deposition process.

According to an embodiment disclosure, the substrate S may be a mother substrate for fabricating display panels. The substrate S may have a large area and may have lengths of about 2.2 m and about 2.5 m in the first and second directions DR1 and DR2, respectively. It should be understood, however, that the disclosure is not limited thereto. The substrate S may have a variety of sizes. The substrate S may deflect in the direction opposite to the third direction DR3, for example, in the downward direction due to its own weight.

In the drawings, the first direction DR1 and the second direction DR2 intersect each other as the horizontal directions. For example, the first direction DR1 and the second direction DR2 may be perpendicular to each other. A third direction DR3 may intersect the first direction DR1 and the second direction DR2, and may be a vertical direction, for example. Herein, the side indicated by the arrow of each of the first to third directions DR1, DR2 and DR3 may be referred to as a first side, while the opposite side may be referred to as a second side. It should be noted that in case that only each direction is referred without specific reference to the first side and the second side in the direction, it may imply that the direction may include at least one of the first side and the second side.

The electrostatic chuck 140 may be placed above the substrate S. The electrostatic chuck 140 may be disposed above the first lifting unit 150. The size of the electrostatic chuck 140 may be larger than that of the substrate S. Accordingly, like the substrate S, the electrostatic chuck 140 may also deflect toward the substrate S, for example, in the downward direction due to its own weight.

The electrostatic chuck 140 may attach the substrate S to the electrostatic chuck 140. The electrostatic chuck 140 may attach the substrate S to the electrostatic chuck 140 with electrostatic force by applying a voltage to an electrode pattern ETP (see FIG. 4).

The first lifting unit 150 may be disposed below the electrostatic chuck 140. The first lifting unit 150 may be disposed on each of the both sides of the mask holder 130. For example, the first lifting unit 150 may be disposed on one side or a side and the opposite side of the mask holder 130 in the second direction DR2. Although not shown in the drawings, the first lifting unit 150 may be disposed on each of one side or a side and the opposite side of the mask holder 130 in the first direction DR1 as well.

The first lifting unit 150 may include a first support 151, a first driver 152, a first connector 153 and a support plate 154.

The first support 151 may support the first driver 152, the first connector 153, and the support plate 154. Although the first support 151 is connected to a sidewall of the chamber 110 in the drawing, the disclosure is not limited thereto. It may be connected to the bottom of the chamber 110 or connected to another member to work as a support.

The first driver 152 may be disposed on the first support 151. The first driver 152 may provide a driving force for elevating the first connector 153 and the support plate 154. The first driver 152 may include any device or structure that moves an object, such as a cylinder and a motor.

The first connector 153 may connect the first driver 152 with the support plate 154. The first connector 153 may be disposed between the first driver 152 with the support plate 154. For example, the first connector 153 may be disposed between the first driver 152 and the support plate 154 in the third direction DR3.

The support plate 154 may be disposed on the first connector 153. The support plate 154 may provide a support surface on which the substrate S is seated. For example, as shown in the drawing, the support 154 may include a support plate respectively disposed on both sides of the mask holder 130 with the mask holder 130 therebetween. It should be noted that the support 154 may include any shape as long as it provides a support surface on which the substrate S can be seated and the deposition material passing through the mask M can be deposited on the substrate S.

Although not shown in the drawings, the support 154 may be disposed to surround the mask holder 130 in the first and second directions DR1 and DR2.

The second lifting unit 160 may be disposed under or below the tension unit 170. The second lifting unit 160 may be disposed on one side or a side of the first lifting unit 150. For example, the second lifting unit 160 may be disposed on each of one side or a side and the opposite side of the first lifting unit 150 in the second direction DR2. Although not shown in the drawings, the second lifting unit 160 may be disposed on each of one side or a side and the opposite side of the first lifting unit 150 in the first direction DR1 as well.

The second lifting unit 160 may include a second support 161, a second driver 162, and a second connector 163.

The second support 161 may support the second driver 162, the second connector 163, and the tension unit 170. Although the second support 161 is connected to a sidewall of the chamber 110 in the drawing, the disclosure is not limited thereto. It may be connected to the bottom of the chamber 110 or connected to another member to work as a support.

The second driver 162 may be disposed on the second support 161. The second driver 162 may provide a driving force for elevating the second connector 163 and the tension unit 170. The second driver 162 may include any device or structure that moves an object, such as a cylinder and a motor.

The second connector 163 may connect the second lifting unit 160 with the tension unit 170. For example, the second connector 163 may connect the second driver 162 with the tension unit 170. The second connector 163 may be disposed between the second driver 162 and the tension unit 170. For example, the second connector 163 may be disposed between the second driver 162 and the tension unit 170 in the third direction DR3.

The tension unit 170 may be disposed on the second lifting unit 160. The tension unit 170 may be disposed on each of the both sides of the electrostatic chuck 140. For example, the tension unit 170 may be disposed on each of the first side and the second side of the electrostatic chuck 140 in the second direction DR2. Although not shown in the drawing, the tension unit 170 may be disposed on each of the first side and the second side of the electrostatic chuck 140 in the first direction DR1 as well. For example, the tension unit 170 may be disposed on each of the both first side and second side of the electrostatic chuck 140 in the first direction DR1 and the second direction DR2 to apply tensile force to the electrostatic chuck 140 in up, down, left and right directions when viewed from the top.

The tension unit 170 may include a presser 171 and a third driver 172.

The presser 171 may provide tensile force to the electrostatic chuck 140. The presser 171 may be coupled (or connected) to a tension assist device 142 (see FIG. 2) of the electrostatic chuck 140 to provide tensile force to the electrostatic chuck 140. For example, the presser 171 may be coupled to each of the both sides of the electrostatic chuck 140 in the first and second directions DR1 and DR2, to provide a tensile force acting on the first side and the second side of the electrostatic chuck 140 to the electrostatic chuck 140 in the first direction DR1 and the second direction DR2. The electrostatic chuck 140 that deflects downward can become flat by virtue of the tensile force provided by the presser 171, and the substrate S attached to the electrostatic chuck 140 can also become flat together.

According to an embodiment, the presser 171 may apply a tensile force to the electrostatic chuck 140 while rotating in a clockwise or counterclockwise direction. It should be understood, however, that the disclosure is not limited thereto. Any driving scheme may be included as long as a tensile force can be applied in the horizontal direction.

The third driver 172 may provide driving force to the presser 171. For example, the third driver 172 may include a crank to rotate the presser 171 by converting linear motion into rotational motion. It should be understood, however, that the disclosure is not limited thereto. A driving force may be provided to the presser 171 in a variety of driving manners.

The magnet unit 180 may be disposed above the electrostatic chuck 140. The magnet unit 180 may be disposed on the side opposite to the surface of the electrostatic chuck 140 to which the substrate S is attached. For example, the magnet unit 180 may be disposed above the electrostatic chuck 140 in the third direction DR3.

The magnet unit 180 may further include a separate lifting device (not shown) capable of lifting the magnet unit 180. In case that the electrostatic chuck 140 to which the substrate S is attached moves and comes in contact with the mask M, the magnet unit 180 may move towards the electrostatic chuck 140 by driving the lifting device (not shown). The magnet unit in contact with the electrostatic chuck 140 may apply magnetic force to bring the mask M disposed on the opposite side into tight contact with the substrate S, with the electrostatic chuck 140 therebetween. Furthermore, the magnet unit 180 may apply pressure to the electrostatic chuck 140, the substrate S and the mask M, which are attached together, to further bring them into tight contact.

The deposition source 190 may spray a deposition material. The deposition material sprayed from the deposition source 190 may pass through the mask M and settle on the substrate S.

In the deposition apparatus 100 according to this embodiment, the electrostatic chuck 140 may include the tension assist device 142 (see FIG. 2), so that it is possible to suppress deflection of the electrostatic chuck 140 and the substrate S, thereby improving the accuracy of the deposition process. This will be described with reference to FIG. 2 and the like within the spirit and the scope of the disclosure.

FIG. 2 is a schematic perspective view showing an electrostatic chuck according to an embodiment. FIG. 3 is a schematic plan view showing the electrostatic chuck according to an embodiment.

Referring to FIGS. 2 and 3 in conjunction with FIG. 1, the electrostatic chuck 140 may have a thin plate shape. The electrostatic chuck 140 may be made of a thin film. According to an embodiment, the thickness of the electrostatic chuck 140 may be, but is not limited to, about 10 mm.

As shown in the drawings, since the electrostatic chuck 140 is thin but has a large size, it may deflect in the direction opposite to the third direction DR3, for example, in the downward direction due to its own weight. By way of example, the point corresponding to the center of gravity CP of the electrostatic chuck 140 may deflect the most. For example, in case that the electrostatic chuck 140 is symmetrical in the first direction DR1 and the second direction DR2, the center of gravity CP of the electrostatic chuck 140 may be the exact center of the electrostatic chuck 140, and the exact center of the electrostatic chuck 140, which is the center of gravity (CP), may deflect the most.

The electrostatic chuck 140 may include a body 141, tension assist devices 142, and alignment marks 143.

The body 141 may conform to the shape of the substrate S. For example, the body 141 may have a rectangular shape. The body 141 may include two shorter sides extended in the first direction DR1 and facing each other in the second direction DR2, and two longer sides extended in the second direction DR2 and facing each other in the first direction DR1. It is to be understood that the shape of the body 141 is not limited thereto but may have various shapes such as a square, a circle, and a polygon. The size of the body 141 may be larger than that of the substrate S.

The tension assist devices 142 may be coupled to the body 141. The tension assist devices 142 may be coupled to the border of the body 141, for example, the edges of the body 141. According to an embodiment, the tension assist devices 142 may be disposed at the centers of the sides of the body 141, respectively. Although not shown in the drawings, according to an embodiment, the tension assist devices 142 may be disposed on vertices where the sides of the body 141 meet each other. For example, in order to increase the transmission of the tensile force, the tension assist devices 142 may be disposed at points closest to the center of gravity CP of the body 141 (for example, the center of each side) on the respective sides.

In some embodiments, tension assist devices 142 may be disposed on each of the sides of the body 141. Although one tension assist device 142 is disposed on each of the sides of the body 141 in the drawings, the disclosure is not limited thereto. In case that tension assist devices 142 are disposed on each side, a transmission of tension force can be increased.

The alignment marks 143 may be disposed on the edges of the body 141. Alignment marks 143 may be formed. The alignment marks 143 may have different shapes, but the disclosure is not limited thereto. The electrostatic chuck 140 may be aligned with the substrate S to be attached by an alignment device (not shown) recognizing the alignment marks 143.

FIG. 4 is a schematic cross-sectional view taken along line X1-X1′ in FIG. 3. FIG. 5 is a schematic cross-sectional view showing a tension assist device according to an embodiment.

Referring to FIGS. 4 and 5, the body 141 may include a first base BS1, an electrode pattern ETP, an insulating film ISL, and a second base BS2.

The first base BS1 and the second base BS2 may face each other in the third direction DR3. Each of the first base BS1 and the second base BS2 may work as an insulating dielectric and may be a base substrate made of a ceramic material. The first base BS1 and the second base BS2 can prevent electric current flowing through the electrode pattern ETP from directly flowing to the substrate S.

The insulating film ISL may include a ceramic material or an insulating organic material. For example, the insulating film ISL may include aluminum nitride, aluminum oxide, magnesium oxide, polyimide, etc. The insulating film ISL can prevent electric current flowing through the electrode pattern ETP from directly flowing to the substrate S.

In some embodiments, the first base BS1, the second base BS2 and the insulating film ISL may include the same material or a similar material. For example, the first base BS1, the second base BS2 and the insulating film ISL may be a single insulating structure surrounding the electrode pattern ETP.

The electrode pattern ETP may be disposed between the first base BS1 and the second base BS2. The electrode pattern ETP may be surrounded by the insulating film ISL. The electrode pattern ETP may have a plus or minus potential by a voltage supplied from a separate power supply unit (not shown). Electrode patterns ETP may be formed.

The electrode pattern ETP may include a first electrode pattern ETP1 having a plus potential and a second electrode pattern ETP2 having a minus potential. According to an embodiment, the first electrode pattern ETP1 and the second electrode pattern ETP2 may be arranged alternately in the first and second directions DR1 and DR2.

Electrostatic force may be generated by the alternately arranged first electrode patterns ETP1 and second electrode patterns ETP2, and the substrate S may be attached to the electrostatic chuck 140 by the electrostatic force.

A tension assist device 142 may include a coupling portion 142a, a recessed portion 142b, and a stepped portion 142c.

The coupling portion 142a may fix the tension assist device 142 to the body 141. The coupling portion 142a may overlap the edge of the body 141 in the third direction DR3 in case that the tension assist device 142 is coupled to the body 141.

The coupling portion 142a may be in direct contact with the first base BS1 and the second base BS2 of the body 141. For example, the coupling portion 142a may include an upper end and a lower end. The body 141 may be disposed between the upper end and the lower end of the coupling portion 142a in the third direction DR3. The upper and lower ends of the coupling part 142a may be engaged with the body 141 to fix the tension assist device 142 to the body 141.

The coupling portion 142a may have a shape protruding from the stepped portion 142c to one side or a side in the first direction DR1 or the second direction DR2. For example, the coupling portion 142a may protrude toward the body 141 in the first direction DR1 or the second direction DR2 with the recessed portion 142b therebetween in the third direction DR3. The coupling portion 142a may overlap the recessed portion 142b in the third direction DR3.

The body 141 may be inserted into the recessed portion 142b. The recessed portion 142b may provide a space into which the body 141 can be inserted. The recessed portion 142b may overlap the edge of the body 141 in the third direction DR3 in case that the tension assist device 142 is coupled to the body 141. The recessed portion 142b may accommodate the body 141 so that the body 141 can be inserted into the tension assist device 142.

The recessed portion 142b may be recessed from one end or an end of the coupling portion 142a in the first direction DR1 or the second direction DR2. The recessed portion 142b may overlap the coupling portion 142a. For example, the recessed portion 142b may be disposed between the upper end and the lower end of the coupling portion 142a in the third direction DR3.

The stepped portion 142c may be disposed on one side or a side of the body 141. The stepped portion 142c may have a shape protruding to one side or a side from the coupling portion 142a and the recessed portion 142b. For example, the stepped portion 142c may have a shape protruding in a diagonal direction between the opposite direction to the first direction DR1 and the third direction DR3, or in a diagonal direction between the opposite direction to the second direction DR2 and the third direction DR3.

One end or an end of the stepped portion 142c, for example, the end distant from the body 141, may be disposed higher than the upper surface of the body 141. For example, the end of the stepped portion 142c may be positioned higher than the upper surface of the body 141 by a first height H1. The first height H1 may range from about several millimeters to about several tens of millimeters. The end of the stepped portion 142c may be disposed higher than the upper surface of the coupling portion 142a.

As shown in FIG. 4, a first angle θ1, which is an angle between the extension direction of the stepped portion 142c and the extension direction of the coupling portion 142a, may be less than 180 degrees. For example, the first angle θ1 may be an obtuse angle according to this embodiment.

In the deposition apparatus 100 according to this embodiment, the tension assist device 142 of the electrostatic chuck 140 may include the stepped portion 142c, so that it is possible to suppress deflection of the electrostatic chuck 140 and the substrate S, thereby improving the accuracy of the deposition process. In this regard, an existing electrostatic chuck will be described with reference to FIG. 6 and the like for comparison.

FIG. 6 is a schematic cross-sectional view showing an existing electrostatic chuck in case that it is tensioned. FIG. 7 is a schematic cross-sectional view showing the electrostatic chuck according to an embodiment in case that it is tensioned. FIG. 8 is a view illustrating the degree of deflection according to the tension length of the electrostatic chuck according to an embodiment.

Referring to FIGS. 6 to 8 in conjunction with FIG. 1, an existing electrostatic chuck 140′ may not include the tension assist devices 142. The electrostatic chuck 140 according to this embodiment may include the tension assist devices 142. Both the existing electrostatic chuck 140′ and the electrostatic chuck 140 according to this embodiment may deflect downward due to their own weights.

Since the existing electrostatic chuck 140′ may include no tension assist device 142, a tension unit of a deposition apparatus may be directly coupled to the body 141′ to apply tensile force. The tensile unit 170 may directly apply a tensile force to the body 141′ by pulling one side or a side and the opposite side of the body 141′ by a tension length TSL′ in the first direction DR1 and the second direction DR2. In case that the tensile force is applied by the tension unit 170 in the first and second directions DR1 and DR2, the body 141′ may be moved in the third direction DR3 by a rising length RSL′ to reach a tension height line TSH′.

Table 1 below shows the amount of deflection DEF′ according to the tension length TSL′ of the existing electrostatic chuck 140′. The amount of deflection DEF′ may refer to the maximum distance between the tension height line TSH′ and the horizontal height line HZH′ with respect to the both ends of and the body 141′ in case that the electrostatic chuck 140′ is tensioned by the tension length TSL′.

TABLE 1

Tension Length (mm)
0
0.1
0.2
0.5

Amount of Deflection (mm)
2.3
1.8
1.6
1.2

In contrast, the electrostatic chuck 140 according to this embodiment may include the tension assist device 142, the tension unit 170 of the deposition apparatus may be coupled to the tension assist device 142 instead of the body 141 to apply tensile force. The tensile unit 170 may indirectly apply a tensile force to the body 141 by pulling the tension assist device 142 disposed on one side or a side and the opposite side of the body 141 by a tension length TSL in the first direction DR1 and the second direction DR2. In case that the tensile force is applied by the tension unit 170 to the tension assist device 142 in the first and second directions DR1 and DR2, the tension assist device 142 may transmit it to the body 141. The body 141 may be moved in the third direction DR3 by a rising length RSL to reach a tension height line TSH.

Table 2 below shows the amount of deflection DEF according to the tension length TSL of the electrostatic chuck 140 according to this embodiment. The amount of deflection DEF may refer to the maximum distance between the tension height line TSH and the horizontal height line HZH with respect to the both ends of and the body 140 in case that the electrostatic chuck 141 is tensioned by the tension length TSL.

TABLE 2

Tension Length (mm)
0
0.1
0.2
0.5

Amount of Deflection (mm)
2.3
1.6
1.2
0.53

It can be seen from the data of Table 1 and Table 2 that the electrostatic chuck 140 according to this embodiment exhibits improved amount of deflection DEF according to the tension length TSL compared to the amount of deflection DEF′ according to the tension length TSL′ of the existing electrostatic chuck 140′. It can be seen that as the tension lengths TSL and TSL′ increase, the difference between the amount of deflection DEF of the electrostatic chuck 140 and the amount of deflection DEF of the existing electrostatic chuck 140′ increases. In other words, it can be seen that the degree of improvement in the amounts of deflection DEF and DEF′ increases as the tension lengths TSL and TSL′ increase.

The amount of deflection of the electrostatic chuck 140 can be improved compared to the existing electrostatic chuck 140′ because of rotational moment MMT. In the electrostatic chuck 140 according to this embodiment, as the tension assist device 142 having a height difference is pulled to the both sides, the rotational moment MMT acting in a clockwise or counterclockwise direction can be generated. As a result, the lifting force acting in the third direction DR3, for example, the upward direction, is further increased, and thus the rising length RSL can be increased.

As such, the electrostatic chuck 140 according to this embodiment may include the tension assist device 142 having a height difference, so that the deflection of the electrostatic chuck 140 can be reduced. Accordingly, the accuracy of the deposition process can be improved.

Hereinafter, electrostatic chucks according to other embodiments will be described. In the following description, the same or similar elements will be denoted by the same or similar reference numerals, and redundant descriptions will be omitted or briefly described.

FIG. 9 is a schematic cross-sectional view showing an electrostatic chuck according to an embodiment. FIG. 10 is a schematic cross-sectional view showing an electrostatic chuck according to an embodiment.

Referring to FIGS. 9 and 10 in conjunction with FIG. 7, electrostatic chucks 140 according to these embodiments may be different from the electrostatic chuck according to an embodiment described above with reference to FIG. 4 and the like in that a first angle θ1 may be smaller.

For example, a first angle θ1 of an electrostatic chuck 140 according to the embodiment shown in FIG. 9 may be a right angle. A first angle θ1 of the electrostatic chuck 140 according to the embodiment shown in FIG. 10 may be an acute angle.

The first angle θ1 of the electrostatic chucks 140 according to these embodiments as well as the first angle θ1 of the electrostatic chuck according to the embodiment described above with reference to FIG. 4 are smaller than 180 degrees, and the former is even smaller.

As such, as the first angle θ1 decreases, the force of the rotational moment MMT may increase for the same tension length TSL. The rising length RSL according to the tension length TSL can be adjusted appropriately by adjusting the magnitude of the first angle θ1.

FIG. 11 is a schematic cross-sectional view showing an electrostatic chuck according to an embodiment.

Referring to FIG. 11 in conjunction with FIG. 1, an electrostatic chuck 140 according to an embodiment may be different from the electrostatic chuck according to an embodiment described above with reference to FIG. 4 and the like in that the former may further include an auxiliary end 142d.

For example, the electrostatic chuck 140 according to this embodiment may further include an auxiliary end 142d.

The auxiliary end 142d may be disposed on one side or a side of the stepped portion 142c. For example, the auxiliary end 142d may be disposed at one end or an end of the stepped portion 142c, for example, at the end distant from the body 141. The auxiliary end 142d may be disposed on the opposite side of the coupling portion 142a with the stepped part 142c therebetween.

According to an embodiment, the auxiliary end 142d may be extended in a direction parallel to the extension direction of the coupling portion 142a. For example, the auxiliary end 142d may be parallel to the first direction DR1 or the second direction DR2, for example, the horizontal direction. The extension direction of a side surface 142d_s of the auxiliary end 142d may be parallel to the extension direction of a side surface 141_s of one end or an end of the body 141. For example, the extension direction of the side surface 142d_s of the auxiliary end 142d may be parallel to the third direction DR3, for example, the vertical direction.

The auxiliary end 142d may work as a connecting portion coupled to the tension unit 170. For example, the auxiliary end 142d may be coupled to a presser 171 of the tension unit 170. In case that the extension direction of the auxiliary end 142d is parallel to the horizontal direction, the extension direction of the auxiliary end 142d may be identical to the tensile direction of the tension unit 170. For example, the tension unit 170 may apply a tensile force in the same direction as the extending direction of the auxiliary end 142d.

Although the auxiliary end 142d is further included in the electrostatic chuck 140 according to the embodiment described above with reference to FIG. 4 and the like in the drawing, the disclosure is not limited thereto. For example, the auxiliary end 142d may be further included in the electrostatic chucks 140 according to embodiments described above with reference to FIGS. 9 and 10.

According to an embodiment, the extension direction of the auxiliary end 142d may be in a direction different from the horizontal direction. Although the auxiliary end 142d is extended in the opposite direction to the second direction DR2 in the drawing, the disclosure is not limited thereto. For example, the auxiliary end 142d may be extended to the first side and the second side in the first and second directions DR1 and DR2, as well as in a diagonal direction between the first direction DR1 and the third direction DR3, and in a diagonal direction between the second direction DR2 and the third direction DR2. As another example, the auxiliary end 142d may be extended in the vertical direction, for example, the first side and the second side in the third direction DR3.

FIG. 12 is a schematic perspective view showing an electrostatic chuck according to an embodiment. FIG. 13 is a schematic plan view showing an electrostatic chuck according to an embodiment. FIG. 14 is a schematic cross-sectional view showing an electrostatic chuck according to an embodiment.

Referring to FIGS. 12 to 14 in conjunction with FIG. 1, an electrostatic chuck 140 according to an embodiment may be different from the electrostatic chuck according to an embodiment described above with reference to FIG. 2 and the like in that the former may further include at least one groove GRV.

For example, the electrostatic chuck 140 according to this embodiment may further include the groove GRV.

The groove GRV may be disposed adjacent to the central portion of the body 141 where the center of gravity CP of the body 141 is disposed, but the disclosure is not limited thereto. Grooves GRV may be formed. The grooves may be extended in the first direction DR1 and be spaced apart from one another in the second direction DR2.

The grooves GRV may be formed in the second base BS2. The grooves GRV may be formed on the electrode pattern ETP. In order to avoid disconnection of the electrode pattern ETP and keep insulation from the outside, the grooves GRV may not be formed in the layer where the electrode pattern ETP and the insulating film ISL are disposed.

FIG. 15 is a schematic cross-sectional view showing an electrostatic chuck according to an embodiment in case that it is tensioned. FIG. 16 is a view illustrating the degree of deflection according to the tension length of the electrostatic chuck according to an embodiment.

Referring to FIGS. 15 and 16 in conjunction with FIGS. 1, 7 and 8, the electrostatic chuck 140 according to this embodiment further may include grooves GRV to reduce the weight of the electrostatic chuck 140. As the weight is reduced by including the grooves GRV, it is possible to more effectively prevent the deflection by the tension assist device 142.

For example, in case that the tension unit 170 pulls the tension assist device 142 by a tension length TSL, the body 141 may move in the third direction DR3 by a rising length RSL to reach a tension height line TSH. The rising length RSL of the electrostatic chuck 140 according to this embodiment may be greater than the rising length RSL of the electrostatic chuck 140 according to the above-described embodiment for the same tension length TSL.

Table 3 below shows the amount of deflection DEF according to the tension length TSL of the electrostatic chuck 140 according to this embodiment. The amount of deflection DEF may refer to the maximum distance between the tension height line TSH and the horizontal height line HZH with respect to the both ends of and the body 140 in case that the electrostatic chuck 141 is tensioned by the tensioned length TSL.

TABLE 3

Tension Length (mm)
0
0.1
0.2
0.5

Amount of Deflection (mm)
2.4
0.93
0.31
−0.96

It can be seen from the data of Table 2 and Table 3 that the electrostatic chuck 140 according to this embodiment exhibits even more improved amount of deflection DEF according to the tension length TSL compared to the electrostatic chuck 140 described above with reference to FIG. 6 and the like within the spirit and the scope of the disclosure. It can be seen that as the tension length TSL increases, the difference between the amount of deflection DEF of the electrostatic chuck 140 according to this embodiment and the amount of deflection DEF of the electrostatic chuck 140 according to the above-described embodiment increases. In other words, it can be seen that the degree of improvement in the amounts of deflection DEF increases as the tensile length TSL increases.

Like the electrostatic chuck 140 according to this embodiment, by introducing the grooves GRV and the tension assist device 142 together, the effect of preventing deflection can be further increased.

FIG. 17 is a schematic plan view showing an electrostatic chuck according to an embodiment.

An electrostatic chuck 140 according to an embodiment of FIG. 17 may be different from the electrostatic chuck 140 according to an embodiment described above with reference to FIG. 13 and the like in that a single groove GRV may be formed.

For example, the groove GRV of the electrostatic chuck 140 according to this embodiment may be formed as a single groove.

As shown in the drawings, the single groove GRV may have a rectangular or square shape extended in the first and second directions DR1 and DR2 when viewed from the top. It should be understood, however, that the shape of the groove GRV is not limited thereto. The shape of the groove GRV may have various shapes such as a circular shape, a diamond shape, and a polygonal shape when viewed from the top.

Hereinafter, a method for fabricating a display panel using the deposition apparatus according to the above-described embodiments will be described.

FIG. 18 is a flowchart for illustrating a method of fabricating a display panel according to an embodiment. FIG. 19 is a schematic cross-sectional view showing step S100 of FIG. 18. FIG. 20 is a schematic cross-sectional view showing step S200 of FIG. 18. FIG. 21 is a schematic cross-sectional view showing step S300 of FIG. 18. FIG. 22 is a schematic cross-sectional view showing step S400 of FIG. 18. FIG. 23 is a schematic cross-sectional view showing step S500 of FIG. 18. FIG. 24 is a schematic cross-sectional view showing step S600 of FIG. 18.

Referring to FIGS. 18 to 24, a method S1 for fabricating a display panel according to an embodiment may include loading a substrate into a deposition apparatus (step S100); attaching an electrostatic chuck to the substrate (step S200); flattening, by the tension unit, the electrostatic chuck and the substrate by tensioning the electrostatic chuck (step S300); aligning the flattened electrostatic chuck and the substrate with the mask (step S400); brining, by a magnet unit, the electrostatic chuck, the substrate and the mask into tight contact (step S500); and spraying, by a deposition source, a deposition material (step S600).

The loading S100 the substrate into the deposition apparatus may include providing, by a robot arm (not shown), the substrate S from the outside of the chamber 110 to the inside of the chamber 110. The substrate S provided into the chamber 110 may be disposed between the mask M and the electrostatic chuck 140 in the third direction DR3.

The attaching S200 the electrostatic chuck to the substrate may include moving, by a second lifting unit 160, the electrostatic chuck 140 toward the substrate S. For example, the second connector 163, the tension unit 170 and the electrostatic chuck 140 may descend toward the substrate S by driving the second driver 162 of the second lifting unit 160.

While, before or after the electrostatic chuck 140 descends toward the substrate S, the electrostatic chuck 140 may be aligned with the substrate S by an aligning device (not shown) recognizing the alignment marks 143 (see FIG. 2) of the electrostatic chuck 140.

After the electrostatic chuck 140 has descended, it may generate electrostatic force to attach the substrate S thereto.

The flattening S300, by the tension unit, the electrostatic chuck and the substrate by tensioning the electrostatic chuck may include tensioning, by the tension unit 170, the electrostatic chuck 140. For example, by driving the third driver 172 of the tension unit 170, the presser 171 may generate a tensile force in the first direction DR1 or the second direction DR2.

The presser 171 may be coupled to the stepped portion 142c (see FIG. 4) or the auxiliary end 142d (see FIG. 11) of the above-described tension assist device 142, to apply a tensile force to the tension assist device 142 having a high difference, thereby flattening the body 141 of the electrostatic chuck 140. The substrate S attached by the electrostatic force of the electrostatic chuck 140 may be flattened together with the electrostatic chuck 140.

The aligning S400 the flattened electrostatic chuck and the substrate with the mask may include operating the second lifting unit 160 to move the electrostatic chuck 140 to the attached substrate S toward the substrate S. For example, the second connector 163, the tension unit 170, the electrostatic chuck 140 and the attached substrate S may descend toward the mask M by driving the second driver 162 of the second lifting unit 160.

In case that the support plate 154 of the first lifting unit 150 is positioned higher than the mask M on the mask holder 130, as the electrostatic chuck 140 and the substrate S descend toward the mask M, the electrostatic chuck 140 and the substrate S may collide with the support plate 154. Accordingly, the first lifting unit 150 may operate to move the support plate 154 to a lower position than the mask M on the mask holder 130. For example, the first connector 153 and the support plate 154 may be lowered by the driving of the first driver 152 of the first lifting unit 150, and the support plate 154 may be moved to a position lower than the mask M on the mask holder 130.

While, before or after the electrostatic chuck 140 and the attached substrate S are lowered, the electrostatic chuck 140 and the substrate S may be aligned with the mask M by an aligning device (not shown). For alignment with the mask M, the substrate S and the mask M may each include alignment marks.

After the electrostatic chuck 140 and the attached substrate S have been descended, the substrate S may be in contact with the mask M.

The brining S500, by the magnet unit, the electrostatic chuck, the substrate and the mask into tight contact may include moving the magnitude unit 180 toward the electrostatic chuck 140, the substrate S and the mask M. In this instance, the deposition apparatus 100 may further include a separate lifting device (not shown) capable of lifting the magnet unit 180.

After the magnet unit 180 has descended, it may be in contact with the electrostatic chuck 140. The magnet unit in contact with the electrostatic chuck 140 may apply magnetic force to bring the mask M disposed on the opposite side to the substrate S with the electrostatic chuck 140 therebetween. Furthermore, the magnet unit 180 may apply pressure to the electrostatic chuck 140, the substrate S and the mask M, which are attached to each other, to further bring them into tight contact.

The spraying S600 the deposition material by the deposition source may include spraying, by the deposition source 190, a deposition material. The deposition material sprayed from the deposition source 190 may pass through the mask M and settle on the substrate S.

Hereinafter, a display panel fabricated using the deposition apparatus and the method for fabricating a display panel according to the above-described embodiments will be described.

Referring to FIG. 25, a display panel DP may include a substrate SUB, a circuit element layer ML, a display element layer IML, and a thin-film encapsulation layer TFE. The circuit element layer ML, the display element layer IML and the thin-film encapsulation layer TFE may be sequentially disposed on the substrate SUB.

The substrate SUB may include a synthetic resin film. A synthetic resin layer may be formed on a process substrate used in fabricating the display panel DP. Sequentially, a conductive layer, an insulating layer, etc. may be formed on the synthetic resin layer. In case that the process substrate is removed, the synthetic resin layer may correspond to the substrate SUB. The synthetic resin layer may include a thermosetting resin. By way of example, the synthetic resin layer may be a polyimide-based resin layer, and the material thereof is not particularly limited. Besides, the substrate SUB may include an organic/inorganic composite material substrate, etc.

According to this embodiment, the circuit element layer ML may include an inorganic buffer film BFL, a first intermediate inorganic film GI, and a second intermediate inorganic film ILD, and an organic intermediate organic layer PSV. The materials of the inorganic film and the organic film are not particularly limited herein. According to an embodiment, the buffer film BFL is an optional element and thus may be eliminated.

A semiconductor pattern OSP1 of a transistor T1 may be disposed on the buffer film BFL. The semiconductor pattern OSP1 may be selected from among amorphous silicon, polysilicon, and metal oxide semiconductor.

The first intermediate inorganic film GI may be disposed on the semiconductor pattern OSP1. A control electrode GE1 of the transistor T1 may be disposed on the first intermediate inorganic film GI.

A second intermediate inorganic film ILD covering the control electrode GE1 may be disposed on the first intermediate inorganic film GI. An input electrode DE1 and an output electrode SE1 of the transistor T1 may be disposed on the second intermediate inorganic film ILD.

The input electrode DE1 and the output electrode SE1 may be connected to the semiconductor pattern OSP1 through a first through hole CH1 and a second through hole CH2 penetrating the first intermediate inorganic film GI and the second intermediate inorganic film ILD. According to an embodiment, the transistor T1 may be modified to have a bottom-gate structure.

The intermediate organic film PSV covering the input electrode DE1 and the output electrode SE1 may be disposed on the second intermediate inorganic film ILD. The intermediate organic film PSV may provide a flat surface.

The display element layer IML may be disposed on the intermediate organic film PSV. The display element layer IML may include a pixel-defining film PDL and an organic light-emitting diode (OLED). The pixel-defining film PDL may include an organic material. A first electrode AE may be disposed on the intermediate organic film PSV. The first electrode AE may be connected to the output electrode SE1 through a third through hole CH3 penetrating the intermediate organic film PSV. An opening OP may be defined in the pixel-defining film PDL. The opening OP may expose at least a part of the first electrode AE. According to an embodiment, the pixel-defining film PDL may be eliminated.

According to an embodiment, an emission area PXA may overlap the transistor T1.

A hole control layer HCL may be disposed in common in the emission area PXA and a non-emission area NPXA. An emissive layer EML may be disposed on the hole control layer HCL. The emissive layer EML may be disposed in an area corresponding to the opening OP. The emissive layer EML may include an organic material and/or an inorganic material. The emissive layer EML may generate a light of a given color.

An electron control layer ECL may be disposed on the emissive layer EML. A second electrode CE may be disposed on the electron control layer ECL.

The thin-film encapsulation layer TFE may be disposed on the second electrode CE. The thin-film encapsulation layer TFE may cover the second electrode CE. A capping layer (not shown) may be further disposed between the thin-film encapsulation layer TFE and the second electrode CE to cover the second electrode CE. In this instance, the thin-film encapsulation layer TFE may directly cover the capping layer (not shown).

In concluding the detailed description, those skilled in the art will appreciate that many variations and modifications can be made to the disclosed embodiments without substantially departing from the principles of the disclosure. Therefore, the disclosed embodiments are used in a generic and descriptive sense only and not for purposes of limitation.

ELECTROSTATIC CHUCK, DEPOSITION APPARATUS INCLUDING THE SAME, AND DISPLAY PANEL FABRICATED USING THE SAME

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CPC

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