This application claims the benefit of priority to Chinese Patent Application No. 201310270706.5, filed with the Chinese Patent Office on Jun. 28, 2013 and entitled “ELECTROSTATIC PROTECTION STRUCTURE FOR PIXEL UNIT AND IMAGE SENSOR”, the contents of which is incorporated herein by reference in its entirety.
The present invention relates to the field of electrostatic protection, and in particular to an electrostatic protection structure which may prevent electrostatic damage and an image sensor using the electrostatic protection structure.
With the development of society and continual progress of science and technology, kinds of digital imaging medical technologies emerge in endlessly. Digital imaging technologies have played a very important role in the present medical field. In most of the existing digital imaging medical applications, such as the Chest X-ray and the Computerized Tomography (CT), an element which is crucial in the digital imaging technology is an X-ray sensor.
The operation principle of the X-ray sensor is as follows: a visible light is generated when an X-ray passes through a scintillator layer or a fluorescent layer, and the visible light is converted into a charge by a photodiode in a pixel unit. The charge is stored in the photodiode. A voltage is applied line by line to scan lines in a pixel array by an address control unit, thus pixel switches connected to the scan lines are turned on line by line. The charge stored in the photodiode is output to a data processing unit via a data line. The data processing unit may further process the obtained electrical signal. For example, the data processing unit may amplify and perform the analog-digital conversion on the obtained electrical signal. Finally, image information is obtained.
During the binding manufacturing process of the X-ray sensor, static electricity may enter a display area from the signal output terminal of the date line, thereby damaging a pixel unit in the display area.
a is a plan structural schematic diagram of an electrostatic protection structure in the existing X-ray image sensor, and
One inventive aspect is an electrostatic protection structure. The electrostatic protection structure includes a data line, adapted to transmit a pixel signal, where the data line includes an electrostatic diverting path. The electrostatic protection structure also includes a signal transmission path, where a first terminal of the signal transmission path is connected to a pixel unit, and a second terminal of the signal transmission path is connected to a signal output terminal, where the second terminal is configured to output a signal from the pixel unit. A first terminal of the electrostatic diverting path is connected to a constant potential, and a second terminal of the electrostatic diverting path is connected to the signal output terminal, and the impedance of the signal transmission path is greater than the impedance of the electrostatic diverting path.
Another inventive aspect is an X-ray image sensor. The X-ray image sensor includes a plurality of pixel units, and an electrostatic protection structure connected to the pixel units. The electrostatic protection structure includes a data line, adapted to transmit a pixel signal, where the data line includes an electrostatic diverting path. The electrostatic protection structure also includes a signal transmission path, where a first terminal of the signal transmission path is connected to a pixel unit, and a second terminal of the signal transmission path is connected to a signal output terminal, where the second terminal is configured to output a signal from the pixel unit. A first terminal of the electrostatic diverting path is connected to a constant potential, and a second terminal of the electrostatic diverting path is connected to the signal output terminal, and the impedance of the signal transmission path is greater than the impedance of the electrostatic diverting path.
In order to explain the technical solutions in embodiments of the present invention more clearly, drawings accompanying the embodiments are briefly illustrated hereinafter. Apparently, the accompanying drawings described hereinafter are only for some embodiments of the present invention, and those skilled in the art can further conceive other drawings according to the drawings without creative work.
a is a schematic top view of an electrostatic protection structure in a X-ray image sensor in the prior art;
b is an enlarged diagram of the electrostatic capacitor protection structure in
c is an equivalent circuit diagram of the electrostatic protection structure shown in
The technical solutions according to the embodiments of the present invention will be described clearly and completely as follows in conjunction with the accompany drawings in the embodiments of the present invention. It is clear that the described embodiments are only a part of the embodiments according to the present invention, but not all of the embodiments according to the present invention. All the other embodiments obtained by those skilled in the art based on the embodiments in the present invention without any creative work belong to the scope of the present invention.
c shows an equivalent circuit diagram of an electrostatic protection structure in the prior art shown in
The embodiments of the present invention are described below in conjunction with the accompanying drawings.
In one embodiment, the electrostatic diverting path 213 includes a straight section, and the signal transmission path 214 includes a bending section. When static electricity is generated, the impedance of the bending section is equivalent to the sum of linear resistance and the inductive impedance (2πfL) generated due to the bending, and the impedance of the straight section only includes the linear resistance. Therefore, the impedance of the electrostatic diverting path 213 being less than the impedance of the signal transmission path 214 is realized.
It should be noted that, although the inductance impedance generated due to the bending of the path is less in the case of the normal operation, the additional inductive impedance caused by the high frequency characteristic of the extremely short discharge time is not ignorable in the case of instant electrostatic discharge.
Furthermore, an electrostatic protection capacitor 22 is provided in the electrostatic diverting path 213. One polar plate of the electrostatic protection capacitor 22 is connected to a constant potential via a wire 23, to divert the static electricity to the constant potential. The other polar plate of the electrostatic protection capacitor 22 is connected to the signal output terminal 211 via a data line in the electrostatic diverting path 213, to further reduce the impedance of the electrostatic diverting path 213. In one embodiment, the wire 23 is a wire in a gate electrode layer. The constant potential may be the ground potential, that is to say, one polar plate of the electrostatic protection capacitor 22 may be connected to the signal output terminal 211 of the data line, and the other polar plate of the electrostatic protection capacitor 22 may be grounded via the wire 23.
It should be noted that, multiple electrostatic protection capacitors 22 may be connected in parallel in the electrostatic diverting path 213 as required, to avoid a failure of the electrostatic protection structure caused by a uniquely provided electrostatic protection capacitor being broken down by the static electricity. By providing the multiple electrostatic protection capacitors in parallel, the efficacy of the electrostatic protection structure may be effectively improved.
Similar to the above-mentioned embodiment, multiple electrostatic protection capacitors may be provided in the electrostatic diverting path, which are respectively connected in parallel with the electrostatic protection capacitors 321, 322, 323 and 324, to further improve the efficiency of electrostatic protection.
In another embodiment of the present invention, the signal transmission path portion and the electrostatic diverting path portion of the data line may be made of materials with different resistivities to achieve the fact that the impedance of the signal transmission path is larger than the impedance of the electrostatic diverting path. Similar to the above-mentioned embodiment, an electrostatic protection capacitor may be provided in the electrostatic diverting path to further reduce the impedance of the electrostatic diverting path, thus more static electricity is transmitted to the electrostatic diverting path, thereby reducing the damage to a working component due to the static electricity passing through the signal transmission path.
In one embodiment, two polar plates of the electrostatic protection capacitor according to various embodiments of the present invention are a gate electrode layer and a source drain electrode layer respectively, and the intermediate medium of the electrostatic protection capacitor is an active layer. The material of the active layer is an amorphous silicon film.
In another embodiment, two polar plates of the electrostatic protection capacitor according to various embodiments of the present invention are a source drain electrode layer and a common electrode layer respectively, and the intermediate medium of the electrostatic protection capacitor is a passivation layer. The material of the common electrode layer is Indium Tin Oxide (ITO) and the material of the passivation layer is SiNx.
Furthermore, the electrostatic protection capacitor provided by an embodiment of the present invention may further include a dummy pixel protection unit. The dummy pixel protection unit is provided between the signal transmission path and the pixel unit, to further ensure the electrostatic protection.
In addition, an embodiment of the present invention further provides an X-ray image sensor including the above-mentioned electrostatic protection structure. The X-ray image sensor further includes multiple pixel units. The electrostatic protection structure is connected to a pixel unit in a display area of the X-ray image sensor, and the signal output from the pixel unit is output via the electrostatic protection structure. During the manufacturing process of the X-ray image sensor, in the case where the static electricity enters from the signal output terminal, the static electricity is diverted out by the electrostatic protection structure, thereby preventing the pixel unit or other component from electrostatic damage. It should be noted that, one electrostatic protection structure may be connected to multiple pixel units, and alternatively one electrostatic protection structure may be connected to one pixel unit.
The advantages or beneficial effects of embodiments of the present invention are as follows.
The data line connected to the pixel unit has two portions, namely, the signal transmission path and the electrostatic diverting path. One terminal of the signal transmission path is connected to the pixel unit, and the other terminal of the signal transmission path is connected to the signal output terminal. One terminal of the electrostatic diverting path is connected to the signal output terminal, and the other terminal of the electrostatic diverting path is connected to the constant potential. Moreover, the impedance of the signal transmission path is provided larger than that of the electrostatic diverting path, thus the static electricity can be directly diverted out via the electrostatic diverting path in the case where the static electricity flows into the data line from the signal output terminal, thereby protecting the pixel unit connected to the signal transmission path from the electrostatic damage.
The embodiments described above are not for limiting the scope of protection of the technical solution. Any changes, equivalent substitutions, improvements and so on made within the spirit and principle of the above-mentioned embodiments are all contained in the scope of protection of the technical solution.
| Number | Date | Country | Kind |
|---|---|---|---|
| 201310270706.5 | Jun 2013 | CN | national |