The present disclosure generally relates to a encapsulation structure containing quantum dot and a method for making the encapsulation structure.
A quantum dot is a nanocrystal made of semiconductor materials that are small enough to exhibit quantum mechanical properties. Nowadays, quantum dot is widely used in many applications, such as transistors, solar cells, LEDs, and laser diodes. There is a need to encapsulate the quantum dot to prevent water and/or oxygen from affecting the properties of the quantum dot during use.
Implementations of the present technology will now be described, by way of example only, with reference to the attached figures.
It will be appreciated that for simplicity and clarity of illustration, where appropriate, reference numerals have been repeated among the different figures to indicate corresponding or analogous elements. In addition, numerous specific details are set forth in order to provide a thorough understanding of the embodiments described herein. However, it will be understood by those of ordinary skill in the art that the embodiments described herein can be practiced without these specific details. In other instances, methods, procedures and components have not been described in detail so as not to obscure the related relevant feature being described. Also, the description is not to be considered as limiting the scope of the embodiments described herein. The drawings are not necessarily to scale and the proportions of certain parts may be exaggerated to better illustrate details and features of the present disclosure.
A definition that applies throughout this disclosure will now be presented.
The term “comprising,” when utilized, means “including, but not necessarily limited to”; it specifically indicates open-ended inclusion or membership in the so-described combination, group, series, and the like.
In this embodiment, the first substrate 10 defines a plurality of grooves 11, and the quantum dot layer 20 is formed in the plurality of grooves 11. The grooves 11 have a depth in a range of about 5 μm to about 10 μm. The grooves 11 can be formed by chemical etching or laser engraving the first substrate 10.
In this embodiment, both the first substrate 10 and the second substrate 30 are flexible and ultrathin glass having a thickness of no more than 0.2 mm. The thickness of the first substrate 10 and the thickness of the second substrate 30 can be the same or different.
The quantum dot layer 20 can be formed by coating a colloidal quantum dot on the first substrate 10. The colloidal quantum dot contains a red quantum dot, a green quantum dot, and polymer glue. The weight ratio of the red quantum dot to the green quantum dot can be adjusted according to the requirements of application. In this embodiment, the weight ratio of the red quantum dot to the green quantum dot is in a range from about 1:2 to about 2:1. The polymer glue is selected from a group consisting of acrylic resin glue, organic siloxane glue, acrylate modified polyurethane glue, acrylate modified silicone resin glue, epoxy resin glue, and any combination thereof.
The red quantum dot and the green quantum dot can be common quantum dot material known in the field, such as II-VI group quantum dot, III-V group quantum dot, IV-VI group quantum dot, I-III-VI group quantum dot, and II-III-VI group quantum dot.
The encapsulation structure 100 can effectively prevent water and/or air from permeating into the encapsulation structure 100, which can make the quantum dot layer 20 maintain a good emission effect. The edge of the first substrate 10 and the edge of the second substrate 30 can be sealed together by laser welding or glass solder sealing.
A method for making the encapsulation structure 100 may include the following steps:
A first substrate 10 is provided. The first substrate 10 is a flexible and ultrathin glass having a thickness of no more than 0.2 mm.
A quantum dot layer 20 is formed on the first substrate 10. Forming the quantum dot layer 20 on the first substrate 10 further includes the following steps:
A photoresist layer 40 is formed on one surface of the first substrate 10 as shown in
A red quantum dot powder and a green quantum dot powder are dispersed in a polymer glue to obtain a colloidal quantum dot. Both the red quantum dot and the green quantum dot can have a weight percentage of less than 5% in the colloidal quantum dot. In this embodiment, the weight ratio of the red to green quantum dot is in a range from about 1:2 to about 2:1. The polymer glue is selected from a group consisting of acrylic resin glue, organic siloxane glue, acrylate modified polyurethane glue, acrylate modified silicone resin glue, epoxy resin glue, or any combination thereof. The colloidal quantum dot is coated in the grooves 11 of the first substrate 10 to form the quantum dot layer 20. Finally, the photoresist layer 40 remaining on the first substrate 10 is removed.
A second substrate 30 is provided. The second substrate 30 is a flexible and ultrathin glass having a thickness of no more than 0.2 mm.
The edge of the first substrate 10 and the edge of the second substrate 30 are sealed together to form a sealed space to receive the quantum dot layer 20, thereby the quantum dot layer 20 is encapsulated between the first substrate 10 and the second substrate 30.
In this example, both the first substrate 10 and the second substrate 30 were ultrathin glass having a thickness of less than 0.1 mm. One surface of the first substrate 10 was coated by a photoresist to form a photoresist layer 40. The photoresist layer 40 was exposed and developed to allow the surface of the first substrate 10 to be partially uncovered by the photoresist layer 40. The surface of the first substrate 10 not covered by the photoresist layer 40 was etched to form a plurality of grooves 11 having an average depth of about 5 μm by a hydrofluoric acid solution having a concentration of about 5%.
A red quantum dot powder and a green quantum dot powder were dispersed in an acrylic resin glue to obtain a colloidal quantum dot. The colloidal quantum dot was coated in the grooves 11 of the first substrate 10 to form a quantum dot layer 20. The remaining photoresist layer 40 was removed from the first substrate 10. The edge of the first substrate 10 and the edge of the second substrate 30 were sealed together by laser welding; thereby the quantum dot layer 20 was encapsulated between the first substrate 10 and the second substrate 30.
In this example, both the first substrate 10 and the second substrate 30 were ultrathin glass having a thickness of no more than 0.2 mm. One surface of the first substrate 10 was coated by a photoresist to form a photoresist layer 40. The photoresist layer 40 was exposed and developed to allow the surface of the first substrate 10 to be partially uncovered by the photoresist layer 40. The surface of the first substrate 10 not covered by the photoresist layer 40 was etched to form a plurality of grooves 11 having an average depth of about 10 μm by a hydrofluoric acid solution having a concentration of about 5%.
A red quantum dot powder and a green quantum dot powder were dispersed in an acrylic resin glue to obtain a colloidal quantum dot. The colloidal quantum dot was coated in the grooves 11 of the first substrate 10 to form a quantum dot layer 20. The photoresist layer 40 remaining was removed from the first substrate 10. The edge of the first substrate 10 and the edge of the second substrate 30 were sealed together by laser welding; thereby the quantum dot layer 20 was encapsulated between the first substrate 10 and the second substrate 30.
In this example, both the first substrate 10 and the second substrate 30 were ultrathin glass having a thickness of less than 0.15 mm. One surface of the first substrate 10 was coated by a photoresist to form a photoresist layer 40. The photoresist layer 40 was exposed and developed to allow the surface of the first substrate 10 to be partially uncovered by the photoresist layer 40. The surface of the first substrate 10 not covered by the photoresist layer 40 was etched to form a plurality of grooves 11 having an average depth of about 10 μm by a hydrofluoric acid solution having a concentration of about 5%.
A red quantum dot powder and a green quantum dot powder were dispersed in an acrylic resin glue to obtain a colloidal quantum dot. The colloidal quantum dot was coated in the grooves 11 of the first substrate 10 to form a quantum dot layer 20. The photoresist layer 40 remaining was removed from the first substrate 10. The edge of the first substrate 10 and the edge of the second substrate 30 were sealed together by laser welding; thereby the quantum dot layer 20 was encapsulated between the first substrate 10 and the second substrate 30.
It is believed that the exemplary embodiment and its advantages will be understood from the foregoing description, and it will be apparent that various changes may be made thereto without departing from the spirit and scope of the disclosure or sacrificing all of its advantages, the examples hereinbefore described merely being preferred or exemplary embodiments of the disclosure.
Number | Date | Country | Kind |
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103130522 | Sep 2014 | TW | national |