Patent Application
20120293586
Fluid ink jet systems typically include one or more printheads having a plurality of ink jets from which drops of fluid are ejected towards a recording medium. The ink jets of a printhead receive ink from an ink supply chamber or manifold in the printhead which, in turn, receives ink from a source, such as a melted ink reservoir or an ink cartridge. Each ink jet includes a channel having one end in fluid communication with the ink supply manifold. The other end of the ink channel has an orifice or nozzle for ejecting drops of ink. The nozzles of the ink jets may be formed in an aperture or nozzle plate that has openings corresponding to the nozzles of the ink jets. During operation, drop ejecting signals activate actuators in the ink jets to expel drops of fluid from the ink jet nozzles onto the recording medium. By selectively activating the actuators of the ink jets to eject drops as the recording medium and/or printhead assembly are moved relative to one another, the deposited drops can be precisely patterned to form particular text and graphic images on the recording medium.
One difficulty faced by fluid ink jet systems is wetting, drooling or flooding of inks onto the printhead front face. Such contamination of the printhead front face can cause or contribute to blocking of the ink jet nozzles and channels, which alone or in combination with the wetted, contaminated front face, can cause or contribute to non-firing or missing drops, undersized or otherwise wrong-sized drops, satellites, or misdirected drops on the recording medium and thus result in degraded print quality.
Current printhead front face coatings are typically sputtered polytetrafluoroethylene coatings. When the printhead is tilted, the UV gel ink at a typical jetting temperature between 75-95° C. and the solid ink at a typical jetting temperature of about 105° C. do not readily slide on the printhead front face surface. Rather, these inks adhere and flow along the printhead front face and leave an ink film or residue on the printhead which can interfere with jetting. For this reason, the front faces of UV and solid ink printheads are prone to be contaminated by UV and solid inks. In some cases, the contaminated printhead can be refreshed or cleaned with a maintenance unit. However, such an approach introduces system complexity, hardware cost, and sometimes reliability issues.
There remains a need for materials and methods for preparing devices having superoleophobic characteristics alone or in combination with superhydrophobic characteristics. Further, while currently available coatings for ink jet printhead front faces are suitable for their intended purposes, a need remains for an improved printhead front face design that reduces or eliminates wetting, drooling, flooding, or contamination of UV or solid ink over the printhead front face; that is ink phobic or oleophobic, and robust to withstand maintenance procedures such as wiping of the printhead front face; and/or that is easily cleaned or self-cleaning, thereby eliminating hardware complexity, such as the need for a maintenance unit, reducing run cost and improving system reliability.
According to various embodiments, the present teachings include a superoleophobic device. The superoleophobic device can include a semiconductor layer disposed over a substrate. The semiconductor layer can have a textured surface formed by one or more of a pillar structure, a groove structure, and a combination thereof. The superoleophobic device can also include a conformal particulate composite layer disposed on the textured surface of the semiconductor layer. A surface of the conformal particulate composite layer can have a plurality of metal-containing particulates. The superoleophobic device can further include a conformal oleophobic coating disposed on the conformal particulate composite layer to provide the device with a multi-scale superoleophobic surface.
According to various embodiments, the present teachings also include a method of forming a superoleophobic device. The superoleophobic device can be formed to include a semiconductor layer having a textured surface formed by one or more of a pillar structure, a groove structure, and a combination thereof. A particulate composite layer can then be conformally formed on the textured surface of the semiconductor layer such that a surface of the conformal particulate composite layer can include a plurality of metal-containing particulates. The particulate composite layer can be chemically modified by conformally disposing an oleophobic coating thereon to provide the device with a multi-scale superoleophobic surface.
According to various embodiments, the present teachings further include a method of forming a superoleophobic device by providing a semiconductor layer on a flexible substrate. A textured surface can be created in the semiconductor layer using photolithography. The textured surface can be formed by one or more of a pillar structure, a groove structure, and a combination thereof, while each of the pillar structure and the groove structure can have one or more of a wavy side wall, an overhang structure, and a combination thereof. A conformal particulate composite layer can then be formed on the textured surface of the semiconductor layer using an atomic layer deposition (ALD) process such that a surface of the conformal particulate composite layer can include a plurality of metal-containing particulates to provide the device with a multi-scale surface. The particulate composite layer can be chemically modified by conformally disposing an oleophobic coating thereon to provide the device with a multi-scale superoleophobic surface.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present teachings, as claimed.
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate several embodiments of the present teachings and together with the description, serve to explain the principles of the present teachings.
It should be noted that some details of the figures have been simplified and are drawn to facilitate understanding of the embodiments rather than to maintain strict structural accuracy, detail, and scale.
Reference will now be made in detail to embodiments of the present teachings, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts. In the following description, reference is made to the accompanying drawings that form a part thereof, and in which is shown by way of illustration specific exemplary embodiments in which the present teachings may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the present teachings and it is to be understood that other embodiments may be utilized and that changes may be made without departing from the scope of the present teachings. The following description is, therefore, merely exemplary.
Various embodiments provide a device having a multi-scale superoleophobic surface and methods for forming and using the device. In one embodiment, the exemplary device can include a semiconductor layer disposed over a substrate. The semiconductor layer can include a textured surface formed by groove-structures and/or pillar structures, providing micron- and/or submicron-scale levels for the device surface. Overlaying the semiconductor layer, there can be a conformal particulate composite layer having a surface with a plurality of metal-containing particulates, providing an additional scale level, e.g., in a nano-scale, for the device surface. The device can then have a “multi-scale surface”, e.g., a surface that includes a scale level that varies from micro-scale to, sub-micro-scale to nano-scale. Overlaying the surface having metal-containing particulates, there can be a conformal oleophobic coating to provide the device with a “multi-scale superoleophobic surface.”
In
The semiconductor layer 130 can be, e.g., a silicon layer of amorphous silicon. The semiconductor layer 130 can be prepared by depositing a thin layer of amorphous silicon onto large areas of the substrate, 110. The thin layer of silicon can have any suitable thickness. In embodiments, the silicon layer can be deposited onto the substrate 110 at a thickness of from about 500 nm to about 5 μm, or from about 1 μm to about 5 μm, such as about 3 μm. The layer of silicon can be formed by, e.g., sputtering, chemical vapor deposition, very high frequency plasma-enhanced chemical vapor deposition, microwave plasma-enhanced chemical vapor deposition, plasma-enhanced chemical vapor deposition, use of ultrasonic nozzles in an in-line process, among others.
The semiconductor layer 130 can have a textured surface including pillar structure(s), e.g., arranged as pillar arrays 300 as shown in
The pillar arrays and/or groove structures with wavy side walls as shown in
In embodiments, instead of having wavy side walls as shown in
For example, pillar arrays and/or groove structures each having overhang structures 237 can be formed by a semiconductor layer 230 (e.g., a silicon oxide layer). The semiconductor layer 230 can be formed over a layer 220 such as a second semiconductor layer of silicon. In one embodiment, the layer 230 over the layer 220 can be “T”-shaped. The layer 220 can be formed over a substrate 110, which can be the same or different from the substrate 110 in
In an exemplary embodiment, the device 200A in
Referring back to
For example, each pillar structure/grove structure can have a height ranging from about 0.3 micrometers to about 4 micrometers, or from about 0.5 micrometers to about 3 micrometers, or from about 1 micrometer to about 2.5 micrometer.
Each pillar structure/groove structure having wavy sidewalls can have an average width or diameter ranging from about 1 micrometer to about 20 micrometers, or from about 2 micrometers to about 15 micrometers, or from about 2 micrometers to about 5 micrometers. Each wave of the wavy sidewalls can be from about 100 nanometers to about 1,000 nanometers, such as about 250 nanometers.
Each overhang structure can have, e.g., a T-shaped structure, including a top structure having a top width or diameter greater than a bottom structure, and a top thickness/height lower than the bottom structure, where the top width or diameter ranging from about 1 micrometer to about 20 micrometers, or from about 2 micrometers to about 15 micrometers, or from about 2 micrometers to about 5 micrometers, and the bottom width/diameter structure can be from about 0.5 micrometer to about 15 micrometers, or from about 1 micrometer to about 12 micrometers, or from about 1.5 micrometers to about 4 micrometers.
In embodiments, the pillar arrays having wavy sidewalls and/or overhang structures; and/or groove structures having wavy sidewalls and/or overhang structures to form the textured surface can have a solid area coverage of from about 0.5% to about 40%, or from about 1% to about 30%, or from about 4% to about 20%, over the entire surface area of the device 100A and/or 200A. In embodiments, the dimensions, shapes, and/or the solid area coverage of the pillar arrays and/or groove structures are not limited. For example, the pillar and groove structures can have a cross-sectional shape including, but not limited to, a round, elliptical, square, rectangular, triangle, or star-shape.
A particulate composite layer 150 as respectively shown in
The plurality of metal-containing particulates can be formed of, for example, Al2O3, TiO2, SiO2, SiC, TiC, Fe2O3, SnO2, ZnO, HfO2, TiN, TaN, GeO2, WN, NbN, Ru, Ir, Pt, ZnS, and/or a combination thereof. In embodiments, the conformal particulate composite layer 150 can have a layer thickness ranging from about 1 nanometer to about 200 nanometers, or from about 5 nanometers to about 150 nanometers, or from about 10 to about 100 nanometers. In some cases, in addition to the metal-containing particulates, the conformal particulate composite layer 150 can include, such as, for example, silane oxides, alkyl Aluminum oxides, e.g., Al—O—Al(CH3)2 or AlOH, SiOx—(CH2)2—SiOx, zinc oxides, or tin oxides and the like to ensure good adhesion between the particulate layer and the substrate.
Any suitable methods and processes can be used to form the particulate composite layer 150 including metal-containing particles. For example, the particulate composite layer 150 can be conformally formed over the entire texture surface of 100A and 200A by an atomic layer deposition (ALD), a chemical vapor deposition (CVD), or other suitable processes, and/or combinations thereof. In an exemplary embodiment, the particulate composite layer 150 can include a plurality of Al2O3 particulates and silane oxides, for example, prepared by a hybrid process including ALD and CVD.
In
A variety of technologies, such as the molecular vapor deposition (MVD) technique, the CVD technique, or the solution coating technique can be used to deposit the self-assembled layer of perfluorinated alkyl chains onto the surface of the particulate composite layer 150. In embodiments, chemically modifying the textured substrate can include chemical modification by conformally self-assembling a fluorosilane coating onto the multi-scale surface shown in
In this manner, exemplary devices can be formed as shown in
A droplet of hydrocarbon-based liquid, for example, hexadecane or ink, can form a super high contact angle with the multi-scale superoleophobic surface of the devices 100C and 200C, such as a contact angle of about 100° or greater, e.g., ranging from about 100° to about 175°, or from about 120° to about 170°. The droplet of a hydrocarbon-based liquid can also form a sliding angle with the disclosed multi-scale superoleophobic surface of from about 1° to about 30°, or from about 1° to about 25°, or from about 1° to about 20°.
In some cases, a droplet of water can form a high contact angle with the disclosed multi-scale superoleophobic surface, such as a contact angle of about 120° or greater, e.g., ranging from about 120° to about 175°, or from about 130° to about 165°. The droplet of water can also form a sliding angle with the multi-scale superoleophobic surface, such as a sliding angle of from about 1° to about 30°, or from about 1° to about 25°, or from about 1° to about 20°.
In embodiments, when the multi-scale superoleophobic devices are incorporated with an ink jet printhead front face, jetted drops of ultra-violet (UV) gel ink (also referred to herein as “UV ink”) and/or jetted drops of solid ink can exhibit low adhesion to the multi-scale superoleophobic surface. As used herein, the term “ink drops” refers to the jetted drops of ultra-violet (UV) gel ink and/or jetted drops of solid ink.
The multi-scale superoleophobic devices can therefore be used as an anti-wetting easy clean, self clean surface device for ink jet printhead front face due to the low adhesion between ink drops and the surface. For example, the multi-scale superoleophobic devices can be bonded to a front face such as a stainless steel aperture plate of an ink-jet printhead.
The exemplary printhead 500 can prevent ink contamination because ink droplets can roll off the printhead front face leaving no residue behind due to the multi-scale superoleophobic surface. The multi-scale superoleophobic surface can provide the ink jet printhead aperture plates with high drool pressure due to its superoleophobicity. Generally, the greater the ink contact angle the better (higher) the drool pressure. Drool pressure relates to the ability of the aperture plate to avoid ink weeping out of the nozzle opening when the pressure of the ink tank (reservoir) increases. That is, the multi-scale superoleophobic device described herein can provide low adhesion and high contact angle for ink drops of ultra-violet curable gel ink and/or solid ink, which further provides the benefit of improved drool pressure or reduced (or eliminated) weeping of ink out of the nozzle.
Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the disclosure are approximations, the numerical values set forth in the specific examples are reported as precisely as possible. Any numerical value, however, inherently contains certain errors necessarily resulting from the standard deviation found in their respective testing measurements. Moreover, all ranges disclosed herein are to be understood to encompass any and all sub-ranges subsumed therein.
While the present teachings have been illustrated with respect to one or more implementations, alterations and/or modifications can be made to the illustrated examples without departing from the spirit and scope of the appended claims. In addition, while a particular feature of the present teachings may have been disclosed with respect to only one of several implementations, such feature may be combined with one or more other features of the other implementations as may be desired and advantageous for any given or particular function. Furthermore, to the extent that the terms “including,” “includes,” “having,” “has,” “with,” or variants thereof are used in either the detailed description and the claims, such terms are intended to be inclusive in a manner similar to the term “comprising.” Further, in the discussion and claims herein, the term “about” indicates that the value listed may be somewhat altered, as long as the alteration does not result in nonconformance of the process or structure to the illustrated embodiment. Finally, “exemplary” indicates the description is used as an example, rather than implying that it is an ideal.
Other embodiments of the present teachings will be apparent to those skilled in the art from consideration of the specification and practice of the present teachings disclosed herein. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the present teachings being indicated by the following claims.
