ESD protection device and integrated circuit utilizing the same

Abstract

An ESD protection device comprising a first switch, a second switch, a discharge unit, and a detection unit. The first switch is coupled to a first power line. The second switch is coupled between the first switch and a second power line. The discharge unit is coupled between the first and second power lines. The detection unit is coupled between the first and second power lines. The first switch is turned on when an ESD event occurs in the first power line. The second switch is turned on when the ESD event does not occur in the first power line.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention can be more fully understood by reading the subsequent detailed description and examples with references made to the accompanying drawings, wherein:

FIG. 1 a is a schematic diagram of a conventional ESD protection device,

FIG. 1 b is a top view of the conventional ESD protection device shown in FIG. 1a;

FIG. 2 is a schematic diagram of another ESD protection device;

FIG. 3 is a schematic diagram of another ESD protection device;

FIG. 4 is a schematic diagram of an exemplary embodiment of an integrated circuit;

FIG. 5 a is a schematic diagram of an exemplary embodiment of the detection unit;

FIG. 5 b is a schematic diagram of another exemplary embodiment of the detection unit;

FIG. 6 is a schematic diagram of another exemplary embodiment of the integrated circuit; and

FIG. 7 is a comparison sheet of the ESD protection devices.

Claims

1. An ESD protection device, comprising: a first switch coupled to a first power line;a second switch coupled between the first switch and a second power line;a discharge unit coupled between the first and second power lines; anda detection unit coupled between the first and second power lines, wherein the first switch is turned on when an ESD event occurs in the first power line and the second switch is turned on when the ESD event does not occur in the first power line.

2. The ESD protection device as claimed in claim 1, wherein the discharge unit is an NMOS transistor, or a PMOS transistor.

3. The ESD protection device as claimed in claim 1, wherein the detection unit comprises a first detector comprising a capacitor and resistor, wherein the capacitor is a coupled between the first power line and a first point and the resistor is coupled between the first point and the second power line.

4. The ESD protection device as claimed in claim 3, wherein the capacitor is an NMOS transistor comprising a drain coupled to the first point, a source coupled to the first point, and a gate coupled to the first power line.

5. The ESD protection device as claimed in claim 3, wherein the capacitor is a PMOS transistor comprising a drain coupled to the first power line, a source coupled to the first power line, and a gate coupled to the first point.

6. The ESD protection device as claimed in claim 3, wherein the capacitor is a diode comprising a cathode coupled to the first power line and an anode coupled to the first point.

7. The ESD protection device as claimed in claim 3, wherein the resistor is an NMOS transistor comprising a drain coupled to the first point, a source coupled to the second power line, and a gate coupled to the first point.

8. The ESD protection device as claimed in claim 3, wherein the resistor is a PMOS transistor comprising a drain coupled to the second power line, a source coupled to the first point, and a gate coupled to the first point.

9. The ESD protection device as claimed in claim 3, wherein the first switch is an NMOS transistor comprising a drain coupled to the first power line, a source coupled to the second switch, and a gate coupled to the first point.

10. The ESD protection device as claimed in claim 3, wherein the first switch is a PMOS transistor comprising a drain coupled to the second switch, a source coupled to the first power line, and a gate coupled to the first point.

11. The ESD protection device as claimed in claim 3, wherein the detection unit comprises a second detector comprising a resistor and a capacitor, wherein the resistor is coupled between the first power line and a second point and the capacitor is coupled between the second point and the second power line.

12. The ESD protection device as claimed in claim 11, wherein the resistor is an NMOS transistor comprising a drain coupled to the first power line, a source coupled to the second point, and a gate coupled to the first power line.

13. The ESD protection device as claimed in claim 11, wherein the resistor is a PMOS transistor comprising a drain coupled to the second point, a source coupled to the first power line, and a gate coupled to the first power line.

14. The ESD protection device as claimed in claim 11, wherein the capacitor is an NMOS transistor comprising a drain coupled to the second power line, a source coupled to the second power line, and a gate coupled to the second point.

15. The ESD protection device as claimed in claim 11, wherein the capacitor is a PMOS transistor comprising a drain coupled to the second point, a source coupled to the second point, and a gate coupled to the second power line.

16. The ESD protection device as claimed in claim 11, wherein the capacitor is a diode comprising a cathode comprising to the second point and an anode coupled to the second power line.

17. The ESD protection device as claimed in claim 11, wherein the second switch is an NMOS transistor comprising a drain coupled to the first switch, a source coupled to the second power line, and a gate coupled to the second point.

18. The ESD protection device as claimed in claim 11, wherein the second switch is a PMOS transistor comprising a drain coupled to the second power line, a source coupled to the first switch, and a gate coupled to the second point.