Patent Application
20240318078
This application is based on and claims priority under 35 U.S.C. § 119 to Korean Patent Applications Nos. 10-2023-0025290, filed on Feb. 24, 2023 and 10-2024-0025426, filed on Feb. 22, 2024, in the Korean Intellectual Property Office, the disclosure of each which is incorporated by reference herein in their entirety.
The disclosure relates to an etching composition for a titanium-containing layer, a method of etching a titanium-containing layer by using the etching composition, and a method of manufacturing a semiconductor device by using the etching composition.
To satisfy excellent performance and low price demanded by consumers, an increase in the degree of integration and an improvement in the reliability of semiconductor devices may be required. As the degree of integration of semiconductor devices increases, damage to components of semiconductor devices during a process of manufacturing semiconductor devices may have a greater effect on reliability and electrical characteristics of semiconductor memory devices. In particular, in the process of manufacturing semiconductor devices, various etching processes may be performed on a desired and/or alternatively predetermined layer (e.g., a titanium-containing layer). However, to perform an effective etching process, the need for an etching composition capable of providing an excellent etching speed, excellent etching selectivity for adjacent layers, the absence of surface residue after etching, excellent storage stability, and the like has been continuously demanded.
Provided is an etching composition having an excellent etching speed for a titanium-containing layer, which is a target layer to be etched, and excellent etching selectivity for adjacent layers, and at the same time, having excellent storage stability without substantially leaving no surface residue on a surface of a target etching layer after etching.
Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the presented embodiments of the disclosure.
According to an embodiment of the disclosure, an etching composition may include an oxidant, an inorganic acid, and a selective etching inhibitor. The inorganic acid may include phosphorus-based inorganic acid, chlorine-based inorganic acid, or fluorine-based inorganic acid, or any combination thereof. The selective etching inhibitor may include a polymer having a nitrogen-containing repeating unit.
In some embodiments, the oxidant may be hydrogen peroxide.
In some embodiments, the inorganic acid may include phosphoric acid.
In some embodiments, the polymer having a nitrogen-containing repeating unit may be a homopolymer.
In some embodiments, the nitrogen-containing repeating unit may include at least one of a repeating unit represented by Formula 1-1, a repeating unit represented by Formula 1-2, a repeating unit represented by Formula 1-3, and a repeating unit represented by Formula 1-4:
wherein A1 in Formulae 1-1 to 1-3 may be *—C(R16)(R17)—**, *—N(R16)—**, *—C(═O)—**, *—O—**, or *—S—**,
In some embodiments, the nitrogen-containing repeating unit may include the repeating unit represented by Formula 1-3. In Formula 1-3, CY1 may be a cyclopropane group, a cyclobutane group, a cyclopentane group, a cyclohexane group, a cycloheptane group, a cyclooctane group, an oxirane group, an oxetane group, a tetrahydrofuran group, or a tetrahydropyran group.
In some embodiments, the nitrogen-containing repeating unit may include the repeating unit represented by Formula 1-4. In Formula 1-4, ring CY2 may be a saturated cyclic group having 4, 5, 6, or 7 carbon atoms.
In some embodiments, the nitrogen-containing repeating unit may include least one of the repeating unit represented by Formula 1-1, the repeating unit represented by Formula 1-2, or the repeating unit represented by Formula 1-3. T1 in Formulae 1-1 to 1-3 ma be the group represented by Formula AN. In Formula AN, (i) T2 may be *—N(Z11)—*′, and ring CY3 may be a pyrrole group, an imidazole group, a pyrazole group, an aziridine group, an azetidine group, a pyrrolidine group, or a piperidine group, or ii) T2 may be *—[N(Z11)(Z12)]+[Z14]−—*′, and ring CYs may be a saturated cyclic group having 4, 5, 6, or 7 carbon atoms.
In some embodiments, the nitrogen-containing repeating unit may include least one of the repeating unit represented by Formula 1-1, the repeating unit represented by Formula 1-2, or the repeating unit represented by Formula 1-3. T1 in Formulae 1-1 to 1-3 ma be the group represented by Formula BN. In Formula BN, ring CY4 may be a pyrrole group, an imidazole group, a pyrazole group, an aziridine group, an azetidine group, a pyrrolidine group, or a piperidine group.
In some embodiments, the selective etching inhibitor may include a first polymer having a first nitrogen-containing repeating unit; and a second polymer having a second nitrogen-containing repeating unit. The first nitrogen-containing repeating unit and the second nitrogen-containing repeating unit each independently may include at least one of the repeating unit represented by Formula 1-1, the repeating unit represented by Formula 1-2, the repeating unit represented by Formula 1-3, and the repeating unit represented by Formula 1-4. The first nitrogen-containing repeating unit and the second nitrogen-containing repeating unit may be different from each other.
In some embodiments, the selective etching inhibitor may further include an amine-containing compound, and the amine-containing compound may be different from the polymer having the nitrogen-containing repeating unit.
In some embodiments, the amine-containing compound may include alkylamine, alkanolamine, or both alkylamine and alkanolamine.
In some embodiments, an amount of the selective etching inhibitor may be in a range of about 0.001 wt % to about 20 wt % per 100 wt % of the etching composition.
In some embodiments, an amount of the oxidant may be in a range of about 0.5 wt % to about 20 wt % per 100 wt % of the etching composition, an amount of the inorganic acid may be in a range of about 30 wt % to about 80 wt % per 100 wt % of the etching composition, and an amount of the selective etching inhibitor may be in a range of about 0.01 wt % to about 0.5 wt % per 100 wt % of the etching composition.
According to an embodiment of the disclosure, a method of etching a titanium-containing layer may include preparing a substrate including a titanium-containing layer, and removing at least a portion of the titanium-containing layer by performing an etching process on the titanium-containing layer using the etching composition.
In some embodiments, the titanium-containing layer may further comprise indium (In), aluminum (Al), tungsten (W), cobalt (Co), lanthanum (La), scandium (Sc), gallium (Ga), molybdenum (Mo), ruthenium (Ru), zinc (Zn), or hafnium (Hf), or any combination thereof.
In some embodiments, the titanium-containing layer may have a first region and a second region. The performing the etching process on the titanium-containing layer using the etching composition may include contacting at least a portion of the first region and at least a portion of the second region with the etching composition, etching part of the first region at a first etching rate of the etching composition, and etching part of the second region at a second rate of the etching composition. The second etching rate of the etching composition for etching the second region may be greater than the first etching rate of the etching composition for etching the first region.
The first region or the second region may include a titanium nitride.
According to an embodiment of the disclosure, a method of manufacturing a semiconductor device may include preparing a substrate including a titanium-containing layer, removing at least a portion of the titanium-containing layer by performing an etching process on the titanium-containing layer using the etching composition, and performing a subsequent manufacturing process on a structure having the substrate including the titanium-containing layer.
The above and other aspects, features, and advantages of certain embodiments of the disclosure will be more apparent from the following description taken in conjunction with the accompanying drawings, in which:
Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the present embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Accordingly, the embodiments are merely described below, by referring to the figure, to explain aspects. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items. Expressions such as “at least one of,” when preceding a list of elements, modify the entire list of elements and do not modify the individual elements of the list. For example, “at least one of A, B, and C,” and similar language (e.g., “at least one selected from the group consisting of A, B, and C”) may be construed as A only, B only, C only, or any combination of two or more of A, B, and C, such as, for instance, ABC, AB, BC, and AC. As used herein, the singular forms “a,” “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise.
When the terms “about” or “substantially” are used in this specification in connection with a numerical value, it is intended that the associated numerical value includes a manufacturing or operational tolerance (e.g., ±10%) around the stated numerical value. Moreover, when the words “generally” and “substantially” are used in connection with geometric shapes, it is intended that precision of the geometric shape is not required but that latitude for the shape is within the scope of the disclosure. Further, regardless of whether numerical values or shapes are modified as “about” or “substantially,” it will be understood that these values and shapes should be construed as including a manufacturing or operational tolerance (e.g., ±10%) around the stated numerical values or shapes. When ranges are specified, the range includes all values therebetween such as increments of 0.1%.
A target layer to be etched is a titanium-containing layer.
The titanium-containing layer includes titanium. In this regard, an etching composition described below may be used in an etching process and/or a chemical mechanical polishing (CMP) process for the titanium-containing layer.
The titanium-containing layer may further include, in addition to titanium, an alkali metal (e.g., sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), etc.), an alkaline earth metal (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), etc.), a lanthanide metal (e.g., lanthanum (La), europium (Eu), terbium (Tb), ytterbium (Yb), etc.), a transition metal (e.g., scandium (Sc), yttrium (Y), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (Co), rhodium (Rh), nickel (Ni), silver (Ag), zinc (Zn), etc.), a post-transition metal (e.g., aluminum (Al), gallium (Ga), indium (In), thallium (Tl), tin (Sn), bismuth (Bi), etc.), or any combination thereof.
In an embodiment, the titanium-containing layer may further include indium (In), aluminum (Al), tungsten (W), cobalt (Co), lanthanum (La), scandium (Sc), gallium (Ga), molybdenum (Mo), ruthenium (Ru), zinc (Zn), hafnium (Hf), or any combination thereof.
For example, the titanium-containing layer may further include at least one of Al, La, W, Mo, or any combination thereof.
For example, the titanium-containing layer may further include W or Mo.
The titanium-containing layer may include at least one of a titanium nitride, a titanium oxide, titanium oxynitride, or a combination thereof.
The titanium-containing layer may include a titanium nitride.
The titanium nitride may further include In, Al, La, Sc, Ga, Hf, Zn, or any combination thereof. In one or more embodiments, the titanium-containing layer may include titanium nitride (TIN), titanium nitride that further includes Al (e.g., titanium/aluminum nitride (TiAIN)), titanium nitride that further includes La, or the like.
In one or more embodiments, the titanium-containing layer may include a titanium oxide. The titanium oxide may include Al, La, Sc, Ga, Hf, or any combination thereof. In an embodiment, the titanium-containing layer may include aluminum oxide (e.g., Al2O3), indium gallium zinc oxide (IGZO), or the like.
In one or more embodiments, the titanium-containing layer may include the titanium nitride and the titanium oxide.
In one or more embodiments, the titanium-containing layer may further include, a metalloid (e.g., boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te), etc.), non-metal (e.g., nitrogen (N), phosphorus (P), oxygen (O), sulfur (S), selenium (Se), etc.), or any combination thereof.
For example, the titanium-containing layer may further include silicon oxide.
The titanium-containing layer may have a single-layer structure including (or consisting of) at least on type of materials or a multi-layer structure or pattern structure including different materials from each other. For example, the titanium-containing layer may have i) a single-layer structure including (or consisting of) titanium nitride, ii) a double-layer structure or pattern structure including a first layer including (or consisting of) titanium nitride and a second layer including (or consisting of) titanium nitride, which further includes Al, iii) a double-layer structure or pattern structure including a first layer including (or consisting of) titanium nitride and a second layer including (or consisting of) aluminum oxide, iv) a double-layer structure or pattern structure including a first layer including (or consisting of) titanium nitride and a second layer including (or consisting of) W or Mo, or the like.
In one or more embodiments, the titanium-containing layer may have a first region and a second region, and a second etching rate of the etching composition for etching the second region may be greater than a first etching rate of the etching composition for etching the first region. During the etching process and/or CMP process for the titanium-containing layer, at least a portion of the first region and at least a portion of the second region may be in contact with the etching composition, and since the second etching rate is greater than the first etching rate, the second region may be etched faster than the first region.
In one or more embodiments, a) the first region, b) the second region, or c) the first region and the second region, may include titanium (Ti).
In one or more embodiments, a) the first region, b) the second region, or c) the first region and the second region, may include a metal nitride.
In one or more embodiments, a) the first region, b) the second region, or c) the first region and the second region, may include i) titanium nitride, ii) titanium nitride further including In, Al, La, Sc, Ga, Zn, Hf, or any combination thereof, or iii) a combination thereof.
In one or more embodiments, a) the first region, b) the second region, or c) the first region and the second region, may include a titanium nitride.
In one or more embodiments, the first region or the second region may include a titanium nitride.
In one or more embodiments, the first region may include Ti, and the second region may not include Ti.
In one or more embodiments, the first region may not include Ti, and the second region may include Ti.
In one or more embodiments, a) the first region, b) the second region, or c) the first region and the second region, may include In, Al, W, Co, La, Sc, Ga, Mo, Ru, Zn, Hf, or any combination thereof.
In one or more embodiments, each of the first region and second region may include i) titanium nitride, ii) titanium nitride further including In, Al, La, Sc, Ga, Zn, Hf, or any combination thereof, or iii) a combination thereof.
In one or more embodiments, the first region may include W, and the second region may not include W.
In one or more embodiments, the first region may include W, and the second region may include titanium nitride (TiN).
In one or more embodiments, the first region may include a W film, and the second region may include a titanium nitride film (TiN film).
In one or more embodiments, the first region may be a W film, and the second region may be a titanium nitride film (TiN film).
In one or more embodiments, the first region may not include Mo, and the second region may include Mo.
In one or more embodiments, the first region may include titanium nitride (TiN), and the second region may include Mo.
In one or more embodiments, the first region may include a titanium nitride film (TIN film), and the second region may include a Mo film.
In one or more embodiments, the first region may be a titanium nitride film (TiN film), and the second region may be a Mo film.
Etching any layer described herein may refer to removing at least some of materials constituting a layer.
Etching composition for titanium-containing layer
The etching composition may include an oxidant, an inorganic acid, and a selective etching inhibitor.
The etching composition may be used for etching the target etching layer described herein, i.e., the titanium-containing layer.
The etching composition may further include water.
In an embodiment, the etching composition may consist of an oxidant, inorganic acid, a selective etching inhibitor, and water.
In one or more embodiments, the etching composition may not include at least one of a fluorine (F)-containing compound, nitric acid, and sulfuric acid (e.g., an F-containing compound, nitric acid, and sulfuric acid).
In one or more embodiments, the etching composition may not include at least one of an F-containing compound, nitric acid, sulfuric acid and hydrochloric acid (e.g., an F-containing compound, nitric acid, sulfuric acid and hydrochloric acid).
For example, nitric acid may be improper to achieve proper etching selectivity since nitric acid can etch a material to be etched relatively slowly (for example, W etc.) in the titanium-containing layer rather quickly, sulfuric acid may be improper due to relatively lower etching selectively thereof (for example, compared to phosphoric acid) and hydrochloric acid may be improper to prepare a semiconductor device since hydrochloric acid can even damage dielectric such as silicon oxide.
The F-containing compound refers to any compound that is dissociable in an aqueous solvent while containing F, and an example thereof includes HF or the like.
The oxidant may serve to etch the titanium-containing layer, and may include, for example, at least one of hydrogen peroxide and ammonium sulfate.
In an embodiment, the oxidant may include hydrogen peroxide. When hydrogen peroxide is used as the oxidant in addition to the inorganic acid, a material to be etched relatively slowly (for example, W, etc.) in the titanium-containing layer may be protected effectively during an etching process, and simultaneously, a material to be etched relatively quickly (for example, titanium nitride, etc.) in the titanium-containing layer may be removed effectively during the etching process.
An amount (weight) of the oxidant may be, for example, in a range of about 0.001 wt % to about 50 wt %, about 0.01 wt % to about 50 wt %, about 0.1 wt % to about 50 wt %, about 0.5 wt % to about 50 wt %, about 1 wt % to about 50 wt %, about 5 wt % to about 50 wt %, about 0.001 wt % to about 30 wt %, about 0.01 wt % to about 30 wt %, about 0.1 wt % to about 30 wt %, about 0.5 wt % to about 30 wt %, about 1 wt % to about 30 wt %, about 5 wt % to about 30 wt %, about 0.001 wt % to about 20 wt %, about 0.01 wt % to about 20 wt %, about 0.1 wt % to about 20 wt %, about 0.5 wt % to about 20 wt %, about 1 wt % to about 20 wt %, about 5 wt % to about 20 wt %, about 10 wt % to about 25 wt %, or about 15 wt % to about 25 wt %, per 100 wt % of the etching composition.
The inorganic acid may serve to, together with the oxidant, etch the titanium-containing layer.
The inorganic acid may include phosphate-based inorganic acid, chlorine-based inorganic acid, fluorine-based inorganic acid, or any combination thereof.
In an embodiment, the inorganic acid may not include nitric acid.
In an embodiment, the phosphorus-based inorganic acid may be a phosphate-based inorganic acid.
For example, the inorganic acid may include at least one of a phosphorus-based inorganic acid and a chlorine-based inorganic acid.
In an embodiment, the inorganic acid may include phosphoric acid.
In one or more embodiments, the inorganic acid may not include sulfuric acid and hydrochloric acid.
An amount (weight) of the inorganic acid may be, for example, in a range of about 0.01 wt % to about 90 wt %, about 0.1 wt % to about 90 wt %, about 1 wt % to about 90 wt %, about 10 wt % to about 90 wt %, about 20 wt % to about 90 wt %, about 30 wt % to about 90 wt %, about 0.01 wt % to about 80 wt %, about 0.1 wt % to about 80 wt %, about 1 wt % to about 80 wt %, about 10 wt % to about 80 wt %, about 20 wt % to about 80 wt %, or about 30 wt % to about 80 wt %, per 100 wt % of the etching composition.
The selective etching inhibitor may interact with a metal atom in the titanium-containing layer, which is a target layer to be etched, to control an etching speed and the like.
The selective etching inhibitor may include a polymer having a nitrogen-containing repeating unit. The polymer may be a water-soluble polymer.
For example, the polymer may be a homopolymer having the same nitrogen-containing repeating unit.
The nitrogen-containing repeating unit may include at least one of a repeating unit represented by Formula 1-1, a repeating unit represented by Formula 1-2, a repeating unit represented by Formula 1-3, and a repeating unit represented by Formula 1-4:
In Formulae 1-1 to 1-3, A1 may be *—C(R16)(R17)—**, *—N(R16)—**, *—C(═O)—**, *—O—**, or *—S—**.
In Formulae 1-1 to 1-3, a1 may be an integer from 0 to 20, and when a1 is 2 or more, two or more of A1 may be identical to or different from each other. When a1 is 0, *-(A1)a1-*′ may be a single bond.
In an embodiment, a1 may be 0.
In one or more embodiments, a1 may not be 0.
In one or more embodiments, a1 may be an integer from 0 to 10.
In one or more embodiments, a1 may be an integer from 1 to 5.
In Formulae 1-1 to 1-4, b1 may be an integer from 0 to 10, and when b1 is 2 or more, two or more of *—C(R14)(R15)—*′ may be identical to or different from each other. When b1 is 0, *—C(R14)(R15)—*′ may be a single bond.
In an embodiment, b1 may be an integer from 0 to 5.
In Formulae 1-1 to 1-3, T1 may be *—N(Z11) (Z12), *—[N(Z11)(Z12)(Z13)]+[Z14], a group represented by Formula AN, or a group represented by Formula BN:
In Formulae 1-3, 1-4, AN, and BN, ring CY1 to ring CY4 may each independently be a C2-C10 cyclic group.
In an embodiment, T1 in Formulae 1-1 to 1-3 may be *—N(Z11)(Z12) or *—[N(Z11)(Z12)(Z13)]+[Z14], wherein Z11 to Z13 may each be hydrogen.
In one or more embodiments, T1 in Formulae 1-1 to 1-3 may be *—N(Z11)(Z12) or *—[N(Z11)(Z12)(Z13)]+[Z14], wherein Z11 may be hydrogen, and Z12 may not be hydrogen.
In one or more embodiments, T1 in Formulae 1-1 to 1-3 may be *—N(Z11)(Z12) or *—[N(Z11)(Z12)(Z13)]+[Z14], wherein Z11 and Z12 may each not be hydrogen.
In one or more embodiments, in Formulae 1-1 to 1-3, T1 may be *—[N(Z11)(Z12)(Z13)]+[Z14], and Z11 to Z13 may each not be hydrogen.
In one or more embodiments, T1 in Formulae 1-1 to 1-3 may a group represented by Formula AN, and Z11 and Z12 in T2 of Formula AN may each be hydrogen.
In one or more embodiments, T1 in Formulae 1-1 to 1-3 may a group represented by Formula AN, and Z11 in T2 of Formula AN may not be hydrogen.
In one or more embodiments, T1 in Formulae 1-1 to 1-3 may be a group represented by Formula AN, and T2 in Formula AN may be *—[N(Z11)(Z12)]+[Z14]−—*′, wherein Z11 and Z12 may each not be hydrogen.
In one or more embodiments, Z11 and Z12 in T2 of Formula 1-4 may each be hydrogen.
In one or more embodiments, in T2 of Formula 1-4, Z11 may not be hydrogen, and Z12 may be hydrogen.
In one or more embodiments, T2 in Formula 1-4 may be *—[N(Z11)(Z12)]+[Z14]−—*′, wherein Z11 and Z12 may not each be hydrogen.
In Formulae 1-3, 1-4, AN, and BN, c1 indicates the number of R1, and may be an integer from 0 to 10. When c1 is 2 or more, two or more of R1 may be identical to or different from each other.
In Formulae 1-4 and AN, T2 may be *—N(Z11)—*′ or *—[N(Z11)(Z12)]+[Z14]−—*′. Z11, Z12, and Z14 are each the same as defined herein.
In one or more embodiments, CY1 in Formula 1-3 may be a cyclopropane group, a cyclobutane group, a cyclopentane group, a cyclohexane group, a cycloheptane group, a cyclooctane group, an oxirane group, an oxetane group, a tetrahydrofuran group, or a tetrahydropyran group.
In one or more embodiments, ring CY2 in Formula 1-4 may be a saturated cyclic group having 4, 5, 6, or 7 carbon atoms.
In one or more embodiments, in Formula AN,
In one or more embodiments, ring CY4 in Formula BN may be a pyrrole group, an imidazole group, a pyrazole group, an aziridine group, an azetidine group, a pyrrolidine group, or a piperidine group.
The C3-C30 carbocyclic group may be, for example, a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, a phenyl group, a naphthyl group, or the like.
The C1-C30 heterocyclic group may be, for example, an oxiranyl group, an oxetanyl group, a tetrahydrofuranyl group, a tetrahydropyranyl group, a pyridinyl group, a pyrimidinyl group, or the like.
[Z14], [Q4], and [Q14] may each be an anion.
For example, [Z14], [Q4], and [Q14] may each independently be hydroxide ([OH]), borate ([B(OH)4]−), fluoride ([F]), chloride ([Cl]), bromide ([Br]), iodide ([I]−), hydrogen sulfate ([HSO4]), nitrate ([NO3]−), formate ([HCOO]−), acetate ([CH3COO]−), or dihydrogen phosphate ([H2PO4]).
In the present specification, * and *′ each indicate a binding site to a neighboring atom unless otherwise defined.
In an embodiment, the repeating unit represented by Formula 1-3 may be represented by one of Formulae 1-3(1) to 1-3(8):
In Formulae 1-3(1) to 1-3(8),
In one or more embodiments, the repeating unit represented by Formula 1-4 may be represented by one of Formulae 1-4(1) to 1-4(3):
In Formulae 1-4(1) to 1-4(3),
In one or more embodiments, the group represented by Formula AN may be represented by one of Formulae AN(1) to AN(12):
In Formulae AN(1) to AN(12),
In one or more embodiments, the group represented by Formula BN may be represented by one of Formulae BN(1) to BN(7):
A weight average molecular weight of the polymer having the nitrogen-containing repeating unit may be in a range of about 200 g/mol to about 100,000 g/mol. The weight average molecular weight may be measured by gel permeation chromatography (GPC), calculated using polystyrene.
In an embodiment, the selective etching inhibitor may include, as the polymer having the nitrogen-containing repeating unit, one type of polymer.
In one or more embodiments, the selective etching inhibitor may include, as the polymer having the nitrogen-containing repeating unit, two or more types of polymers that are different from each other. For example, the selective etching inhibitor may include: a first polymer having a first nitrogen-containing repeating unit; and a second polymer having a second nitrogen-containing repeating unit, wherein the first nitrogen-containing repeating unit and the second nitrogen-containing repeating unit may each independently include at least one of the repeating unit represented by Formula 1-1, the repeating unit represented by Formula 1-2, the repeating unit represented by Formula 1-3, and the repeating unit represented by Formula 1-4, and the first nitrogen-containing repeating unit and the second nitrogen-containing repeating unit may be different from each other.
In one or more embodiments, the polymer having the nitrogen-containing repeating unit may be one of Polymers 1 to 307:
In Polymers 1 to 307,
Polymers 1 to 307 may have weight average molecular weights within the ranges described herein.
The selective etching inhibitor may further include an amine-containing compound different from the polymer having the nitrogen-containing repeating unit. By further including the amine-containing compound, the etching speed and etching selectivity for the titanium-containing layer may be effectively controlled.
In an embodiment, the amine-containing compound may include alkylamine, alkanolamine, or any combination thereof.
In one or more embodiments, the amine-containing compound may include monoalkylamine (e.g., monobutylamine), monoalkanolamine (e.g., ethanolamine), or any combination thereof.
In one or more embodiments, the amine-containing compound may include a compound represented by Formula 5:
N(Q51)(Q52)(Q53) Formula 5
In Formula 5, Q51 to Q53 may each independently be:
For example, Q51 to Q53 may each independently be:
hydrogen; or
For example, in Formula 5, Q51 and Q52 may each be hydrogen, and Q53 may be: a C1-C20 alkyl group; or a C1-C20 alkyl group substituted with *—F, *—OH, or any combination thereof.
When the selective etching inhibitor further includes the amine-containing compound, a weight ratio of the polymer having the nitrogen-containing repeating unit to the amine-containing compound may be in a range of about 100:1 to about 1:10.
An amount (weight) of the selective etching inhibitor may be for example, based on a solid content of the selective etching inhibitor, in a range of 0.001 wt % to 20 wt %, 0.001 wt % to 15 wt %, 0.001 wt % to 10 wt %, 0.001 wt % to 7 wt %, 0.001 wt % to 5 wt %, 0.001 wt % to 4 wt %, 0.001 wt % to 3 wt %, 0.001 wt % to 2 wt %, 0.001 wt % to 1 wt %, 0.001 wt % to 0.5 wt %, 0.001 wt % to 0.1 wt %, 0.005 wt % to 20 wt %, 0.005 wt % to 15 wt %, 0.005 wt % to 10 wt %, 0.005 wt % to 7 wt %, 0.005 wt % to 5 wt %, 0.005 wt % to 4 wt %, 0.005 wt % to 3 wt %, 0.005 wt % to 2 wt %, 0.005 wt % to 1 wt %, 0.005 wt % to 0.5 wt %, 0.005 wt % to 0.1 wt %, 0.01 wt % to 20 wt %, 0.01 wt % to 15 wt %, 0.01 wt % to 10 wt %, 0.01 wt % to 7 wt %, 0.01 wt % to 5 wt %, 0.01 wt % to 4 wt %, 0.01 wt % to 3 wt %, 0.01 wt % to 2 wt %, 0.01 wt % to 1 wt %, 0.01 wt % to 0.5 wt %, 0.01 wt % to 0.1 wt %, 0.05 wt % to 20 wt %, 0.05 wt % to 15 wt %, 0.05 wt % to 10 wt %, 0.05 wt % to 7 wt %, 0.05 wt % to 5 wt %, 0.05 wt % to 4 wt %, 0.05 wt % to 3 wt %, 0.05 wt % to 2 wt %, 0.0 5 wt % to 1 wt %, 0.05 wt % to 0.5 wt %, or 0.05 wt % to 0.1 wt %, per 100 wt % of the etching composition.
In an embodiment, the amount of the oxidant may be in a range of about 0.5 wt % to about 20 wt % per 100 wt % of the etching composition, the amount of the inorganic acid may be in a range of about 30 wt % to about 80 wt % per 100 wt % of the etching composition, and the amount of the selective etching inhibitor is in a range of about 0.01 wt % to about 0.5 wt % per 100 wt % of the etching composition.
In an embodiment, the etching composition may further include, in addition to the oxidant, the inorganic acid, the selective etching inhibitor, and water, an organic acid. The organic acid may be, for example, acetic acid, tartaric acid, benzoic acid, or the like.
The aforementioned etching composition may have a pH in a range of about 1.0 to about 8.0, about 1.0 to about 7.0, about 1.0 to about 6.0, about 1.0 to about 5.0, about 1.0 to about 4.0, about 1.0 to about 3.0, about 2.0 to about 8.0, about 2.0 to about 7.0, about 2.0 to about 6.0, about 2.0 to about 5.0, about 2.0 to about 4.0, about 2.0 to about 3.0, about 3.0 to about 8.0, about 3.0 to about 7.0, about 3.0 to about 6.0, about 3.0 to about 5.0, about 3.0 to about 4.0, about 4.0 to about 8.0, about 4.0 to about 7.0, about 4.0 to about 6.0, about 4.0 to about 5.0, about 5.0 to about 8.0, about 5.0 to about 7.0, or about 5.0 to about 6.0. When the etching composition has a pH within the ranged above, the interaction between a selective etching inhibitor, which will be described later, and the metal atom in the titanium-containing layer may be more smoothly achieved.
In an embodiment, the etching composition may be used in an etching process and/or a CMP process for the titanium-containing layer. The titanium-containing layer is the same as defined herein.
In an embodiment, the etching composition may be used as a scavenger of an etching by-product, a scavenger of a post-etch process by-product, a scavenger of an ashing process by-product, a cleaning composition, a photoresist (PR) scavenger, an etching composition for packaging process, a cleaning agent for packaging process, a removing agent for adhesive substances of wafer, an etchant, a post-etch residue stripper, an ash residue cleaner, a PR residue stripper, a CMP cleaner, a post-CMP cleaner, or the like.
Etching method of titanium-containing layer and manufacturing method of semiconductor device
By using the aforementioned etching composition, the titanium-containing layer may be effectively etched.
Referring to
The titanium-containing layer may be the same as described herein.
By including the selective etching inhibitor, the etching composition may have excellent etching selectivity for the titanium-containing layer, and the productivity and efficiency of the etching process may be improved. Therefore, by using the etching process for the titanium-containing layer with the aforementioned etching composition, a semiconductor device having excellent performance may be prepared.
Referring to
The titanium-containing layer 120 may include a first region 121 and a second region 122. A second etching rate of the etching composition for etching the second region 122 may be greater than a first etching rate of the etching composition for etching the first region 121.
Referring to
The etching composition may be used to etch i) only at least a portion of the second region 122, or ii) each of at least a portion of the second region 122 and at least a portion of the first region 121. Referring to
The first region 121 and the second region 122 may be the same as described herein.
In one or more embodiments, a) the first region 121, b) the second region 122, or c) the first region 121 and the second region 122, may include titanium (Ti).
In one or more embodiments, a) the first region 121, b) the second region 122, or c) the first region 121 and the second region 122, may include i) titanium nitride, ii) titanium nitride further including In, Al, La, Sc, Ga, Zn, Hf, or any combination thereof, or iii) a combination thereof.
In one or more embodiments, the first region 121 or the second region 122 may include a titanium nitride.
In one or more embodiments, a) the first region 121, b) the second region 122, or c) the first region 121 and the second region 122, may include In, Al, W, Co, La, Sc, Ga, Mo, Ru, Zn, Hf, or any combination thereof.
In one or more embodiments, the first region 121 may include W, and the second region 122 may include titanium nitride (TiN).
In one or more embodiments, the first region 121 may include titanium nitride (TIN), and the second region 122 may include Mo.
In one or more embodiments, an etching rate ratio of the second region 122 to the first region 121 of the etching composition may be in a range of about 1.1 to about 30, about 1.1 to about 20, about 1.1 to about 15, about 1.1 to about 11, about 3 to about 30, about 3 to about 20, about 3 to about 15, or about 3 to about 11. The etching rate ratio of the second region 122 to the first region 121 of the etching composition may be obtained by dividing a second etching rate of the etching composition for etching the second region 122 by a first etching rate of the etching composition for etching the first region 121. When the etching rate ratio of the second region 122 to the first region 121 of the etching composition is within the ranges above, the efficiency and productivity of the etching process may be improved.
In one or more embodiments, the first region 121 may include W film the second region 122 may include a titanium nitride film (TiN film), and an etching rate ratio of the second region 122 to the first region 121 of the etching composition (hereinafter referred to as “R(TiN/W)”) may be in a range of about 1.1 to about 30, about 1.1 to about 20, about 1.1 to about 15, about 1.1 to about 11, about 3 to about 30, about 3 to about 20, about 3 to about 15, or about 3 to about 11. The R(TiN/W) may be obtained by dividing an etching rate of the etching composition for etching the second region 122 including a titanium nitride film (TiN film) by an etching rate of the etching composition for etching the first region 121 including a W film.
Referring to
Each of etching compositions of Examples 1 to 10 and Comparative Example 1 was prepared by mixing materials shown in Table 1 in an amount shown in Table 1. In Table 1, the oxidant is hydrogen peroxide, the inorganic acid is phosphoric acid, the weight average molecular weight of Polymers P1 to P5 was 1,600 g/mol, and the balance of each of the etching compositions is water (deionized water).
After adding the etching composition of Example 1 to two beakers and heating until the temperature raised to 70° C., a plasma-etched titanium nitride film (TiN film) and a tungsten film (W film) were immersed in each beaker for 5 minutes. Then, thicknesses of the TiN film and the W film were measured by using an ellipsometer (M-2000, J.A. Woolam), so as to evaluate the etching speed (Å/min) of the etching composition of Example 1 with respect to the TiN film and the W film. Subsequently, R(TIN/W) of the etching composition of Example 1 was evaluated by dividing the etching speed with respect to the TiN film by the etching speed with respect to the W film, and the results are summarized in Table 1.
The same tests were repeated by using the etching compositions of Examples 2 to 10 and Comparative Example 1, and the results are summarized in Table 1.
Referring to Table 1, it was confirmed that the etching compositions of Examples 1 to 10 were able to realize high etching selectivity of the TiN film to the W film compared to the etching composition of Comparative Example 1. Accordingly, the etching composition disclosed herein may be usefully utilized as an etching composition for the titanium-containing layer.
According to the one or more embodiments, an etching composition for a titanium-containing layer may have an excellent etching speed with respect to a titanium-containing layer and an excellent etching selectivity for adjacent layers and may be able to improve productivity and efficiency of an etching process, and thus use of the etching composition may lead to performance of an effective etching process and/or chemical mechanical polishing process on a target etching film, titanium-containing layer. Accordingly, a semiconductor device prepared by using the etching process for the titanium-containing layer with the etching composition for the titanium-containing layer may have excellent performance.
It should be understood that embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each embodiment should typically be considered as available for other similar features or aspects in other embodiments. While one or more embodiments have been described with reference to the figures, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope as defined by the following claims.
| Number | Date | Country | Kind |
|---|---|---|---|
| 10-2023-0025290 | Feb 2023 | KR | national |
| 10-2024-0025426 | Feb 2024 | KR | national |
