Etching of AlGaInAsSb

Abstract

The present invention relates to a wet acid etchant for wet acid etching of intrinsic, n-doped or p-doped Al1-x-zGaxInzAs1-ySby with 0

Description

FIELD OF THE INVENTION

The present invention relates to wet acid etchants for wet acid etching of AlGaInAsSb material, a process for wet acid, etching of AlGaInAsSb structures, and a semiconductor structure prepared by wet acid etching of AlGaInAsSb material.

BACKGROUND OF THE INVENTION

A. Li, C. Lin and Y. Zheng, “Chemical etching liquid system for preparing gallium antimonide semiconductor device”, CN A 1328175 used an etchant comprising to tartaric acid (C₄H₆O₆) with H₂O₂ and HF to etch GaSb-based devices.

P. S. Gladkov at al. “Study of a new chemical etchant for GaSb (100) and (111) substrate preparation for epitaxial growth”, pp. 2413-17. Journal of Electrochemical Society, Vol. 142, No. 7 (1995) used an etchant composed of aqueous tartaric acid, H₂O₂, and HF for surface preparation of plain GaSb material. They suggested the following reactions to take place within the resulting solution:

2GaSb+6H₂O₂->Ga₂O₃+Sb₂O₃+6H₂O  (1)

Sb₂O₃+2C₄H₆O6->2[Sb(C₄H₂O₆)(H₂O)]⁻+H₂O+2H⁺  (2)

Ga₂O₃+6HF->2GaF₂⁺+2F⁻+3H₂O  (3)

The complex tartaric acid dissolves the antimony oxide, while the hydrofluoric acid dissolves the gallium oxide.

This is in contrast to the Gallium citrate formation observed by G. E. Hawes et al. “Solid and Solution State NMR Spectra and the Structure of the Gallium Citrate Complex (NH₄)₃[Ga(C₆H₅O₇)₂].4H₂O”, pp. 1005-1011, European Journal of Inorganic Chemistry (2001), in which Ga reacts with citrate.

From G. C. Desalvo at al. “Citric acid etching of GaAs_1-xSb_x, Al_0.5Ga_0.5Sb, and InAs for Heterostructure Device Fabrication”, pp. 3526-31, Journal of Electrochemical Society, Vol. 141, No. 12 (1994) it is known to use an etchant based on citric acid and H₂O₂ for pattern formation in Ga_0.5Al_0.3Sb and GaAs_1-xSb_x material based devices. For GaAs they reported an etch rate of up to 0.3 μm/min, whereas for both GaSb and Ga_0.5Al_0.5Sb etch rates of less than 10 Å/min were reported in the same solution (9.1 and 0.23 Å/min, respectively).

From H. A. Szymanski et al. “Infrared and Raman studies of arsenic compounds”, pp. 297-304, Applied Spectroscopy, Vol. 22, No. 4 (1968) we know that arsenic oxides are soluble in water (but not necessarily in acids under bias conditions, according to X. Li et al. “Arsenic Oxide Micro crystals in Anodically Processed GaAs”, pp. 1740-1746, Journal of Electrochemical Society, Vol. 147, No. 5 (2000)).

In the present invention no bias conditions were applied, and therefore we expect to the arsenic oxide to be soluble by water reaction alone.

According to Per Kofstad “Inorganic Chemistry. An introduction to the chemistry of the elements”, 467 pages (Norwegian), Tano A. S., Oslo (1987), solid As(III) oxide reacts with water in a wet environment:

As₄O₆+6H₂O=4As(OH)₃(aq)  (4)

Thus, As₂O₃ (or As₄O₆) could form As(OH)₃ (or H₃AsO₃) which is then in solution without HF interfering. In an acidic solution, the following reaction would apply:

As(OH)₃(aq)+H⁺(aq)=As(OH)₂⁺(aq)+H₂O  (5)

Kofstad also reports that Sb in oxidation state +III is little soluble in water.

R. D. Twesten et al. “Microstructure and interface properties of laterally oxidized Al_xGa_1-xAs”, pp. 55-61, SPIE, Vol. 3003 (1997) found remaining oxides of (Al_xGa_1-x)₂O₃, corresponding to Ga₂O₃ in case of GaAs, under oxidation of Al_xGa_1-xAs in wet N₂. This suggests that water alone does not dissolve the Ga oxide as also observed by others (M. J. Howes and D. V. Morgan, “Etching and Surface Preparation of GaAs for Device Fabrication”, pp. 119-160, Gallium Arsenide: Materials, Devices and Circuits, John Wiley & Sons Ltd. 1985). It also suggests that water can react with GaAs to form the oxide:

2GaAs+6H₂O->Ga₂O₃+As₂O₃+6H₂(g)  (6)

The formation of hydrogen would form small gas bubbles if the reaction rate was high.

According to H. Hashimoto et al. “Optical and structural characteristics of Al₂O₃ films deposited by the reactive ionised cluster beam method”, pp. 241-244, Journal of Applied Physics, Vol. 63, no. 1, (1998) deposited Al₂O₃ films were found to be etched by HF, but with an etch rate dependent upon deposition parameters of the Reactive Ionised Cluster Beam method. By varying the deposition parameters, the refractive index of the films could be changed (by changing the Al/oxygen ratio of the oxide). This in turn varied the etch rate of the materials with higher etch rate for to lower refractive index, indicating that reduced oxygen content reduces etch rate.

M. Ishida et al. “A new etching method for single-crystal Al₂O₃ film on Si using Si ion implantation”, pp. 340-4, Sensors and Actuators A (Physical), Vol. A53, no. 1-3, (1996) observed that HF etched Al₂O₃ with higher rate if Si was incorporated into the material.

S. Ootomo et al. reported in “Properties of as-grown, chemically treated and thermally oxidized surfaces of AlGaN/GaN heterostructure”, pp. 934-7, Proceedings of International Workshop on Nitride Semiconductors, Nagoya, Japan, (2000) that a blend of Al₂O₃ and Ga₂O₃ was etched by pure HF, but left F-related impurities.

This suggests to us that the part reaction of aluminium oxide removal will increase with HF concentration in the etchants of the present invention. This means that the etch rate is also dependent on the Al-concentration in the material that is etched.

J. H. Kim et al. “Selective etching of AlGaAs/GaAs structures using the solutions of citric acid/H₂O₂ and de-ionized H₂O/buffered oxide etch”, pp. 558-60, Journal of Vacuum Science Technology, Vol. B16 (1998) observed some etching of AlGaAs by citric acid/H₂O₂. They observed that the etch rate increased with lower Al content and/or with reduced citric acid/H₂O₂ volume ratio. This means that an increased amount of H₂O₂ had to be present in order to reduce the Al oxide at increased Al content. It is therefore probable that the H₂O₂ actually reacts with Al₂O₃ and dissolves this at high concentrations of H₂O₂ and low concentrations of Al. According to P. Kofstad (1987), H₂O₂ can act as a reduction agent. In etching experiments with Al_1-x-zGa_xIn_zAs_1-ySb_y, the Al content may be above what can be expected to be soluble at a high etch rate with H₂O₂ being the only reduction agent. We have introduced HF into our etchant in an attempt to increase the solubility of Al oxide during etch of Al_1-x-zGa_xIn_zAs_1-ySb_y.

In contradiction to equation (6) suggested by Twesten et al., the etchants according to the present invention does not give noticeable hydrogen formation during GaAs etch. The reaction of GaAs with water is therefore less important for the oxidation of GaAs in our etchants.

We propose that in our case H₂O₂ could react with GaAs causing the formation of Ga and As oxides:

2GaAs+6H₂O₂->Ga₂O₃+As₂O₃+6H₂O  (7)

Earlier interpretation of etching experiments on GaSb by P. S. Gladkov et al. does not explain our findings. According to the results of our etching experiments, the Gallium oxide can also be dissolved through some other reaction than equation (3). From etching of GaAs in citric acid/hydrogen peroxide, we have found that a reaction for the solution of Ga₂O₃ could be:

Ga₂O₃+4C₆H₈O₇->2[Ga(C₆H₃O₇)₂]³⁻(aq)+3H₂O+6H⁺  (8)

Ga₂O₃+2C₆H₈O₇->2[Ga(C₆H_SO₇)](aq)+3H₂O  (9)

with citric acid for formation of Gallium citrate complexes.

For the other organic acids in the present invention, our etch rates suggests that similar chemical reactions will happen during etch with the other organic acids.

The purpose of the etchants of the present invention is to produce structures in GaSb-based materials with different content of Al, Ga, In, Sb and As. These structures are among others utilized in semiconductor lasers. In such a laser, it is necessary to remove (etch) layers of Al_1-x-zGa_xIn_zAs_1-ySb_y in designated areas during processing, in order to define an optical wave guide and electrical injection area. In general, when producing microstructures based on III-V semiconductors, it is necessary to be able to etch the materials. The materials etched by the present invention, are based on GaSb and similar materials with different content of Al, Ga, In, Sb and As. Conventionally, these materials have been etched with a more expensive dry-etching technique (gas), also referred to as Reactive Ion Etch (RIE), as it has been difficult to find a good wet etchant. It is assumed that difficulties with the etching of these materials, is the main reason for the small use of this material technology beyond lab scale.

The purpose of the present invention is to utilize a mixture of two or more acids and an oxidizing agent in order to produce novel, convenient etchants for such a to wet etching process.

The primary object of the present invention is to provide etchants for a new and cost-efficient process for etching of semiconductor structures composed of one or more layers or parts of Al_1-x-zGa_xIn_zAs_1-ySb_y with 0<x<1, 0<y<1, 0≦z<1 and 0<x+z<1. The importance of these structures in economical views is high as they is can be used in a variety of semiconductor photonic devices such as micro lasers and waveguides. AlGaInAsSb-based semiconductor lasers seem to have a promising future as they show high output-power, room-temperature emission, and emit in a range of mid-IR wavelengths. By utilizing wet chemical etching to pattern these structures, cheaper lasers can be made as the need for expensive dry etching equipment (as RIE) can be eliminated. Such cost reduction in manufacturing of semiconductor lasers may eventually lead to a wider use of the lasers. The present invention shows the advantage of organic acids with an oxidizing agent and HF as an etchant for AlGaInAsSb-based materials.

SUMMARY OF THE INVENTION

In one aspect the present invention relates to a wet acid etchant for wet acid etching of intrinsic, n-doped or p-doped Al_1-x-zGa_xIn_zAs_1-ySb_y with 0<x<1, 0<y<1, 0≦z<1 and 0<x+z<1, comprising:

• • a) organic acid;
  • b) oxidizing agent; and
  • c) hydrofluoric acid.

In the wet acid etchant, the organic acid may be neat or a mixture, and selected from citric acid, lactic acid, acetic acid and tartaric acid.

In one embodiment of the present invention, when z=0, the organic acid is selected from citric acid, lactic acid and acetic acid.

The oxidizing agent may be hydrogen peroxide (H₂O₂), sodiumhypochlorite (NaOCl), ozone (O₃) or another oxide-forming chemical.

In another embodiment of the present invention, the wet acid etchant comprises:

• • a) up to 90 wt-% of organic acid,
  • b) up to 50 wt-% of oxidizing agent; and
  • c) up to 25 wt-% of hydrofluoric acid,all wt-% are based on the total weight of the composition, the balance is made up by a solvent, preferably water.

In another embodiment of the present invention, the wet acid etchant comprises:

• • a) up to 75 wt-% of organic acid,
  • b) up to 25 wt-% of oxidizing agent; and
  • c) up to 15 wt-% of hydrofluoric acid,all wt-% are based on the total weight of the composition, the balance is made up by a solvent, preferably water.

In an even further embodiment of the present invention, the wet acid etchant comprises:

• • a) up to 60 wt-% of organic acid,
  • b) up to 15 wt-% of oxidizing agent; and
  • c) up to 10 wt-% of hydrofluoric acid,all wt-% are based on the total weight of the composition, the balance is made up by a solvent, preferably water.

In another aspect, the present invention relates to a process for wet acid etching of intrinsic, n-doped or p-doped Al_1-x-zGa_xIn_zAs_1-ySb_y with 0<x<1, 0<y<1, 0≦z<1 and 0<x+z<1, comprising contacting an Al_1-x-zGa_xIn_zAs_1-ySb_y material with a wet acid etchant comprising:

• • a) organic acid;
  • b) oxidizing agent, and
  • c) hydrofluoric acid.

In a further embodiment of the process of the present invention, the organic acid is neat or a mixture.

In the process of the present invention, the organic acid may be selected from citric acid, lactic acid, acetic acid and tartaric acid.

When z=0, the process of the present invention may be conducted with organic acid selected from citric acid, lactic acid and acetic acid.

The process of the present invention may be conducted with the oxidizing agent selected from hydrogen peroxide (H₂O₂), sodiumhypochlorite (NaOCl), ozone (O₃) or another oxide-forming chemical.

In one embodiment the process may be conducted with a wet etchant comprising:

• • a) up to 90 wt-% of organic acid,
  • b) up to 50 wt-% of oxidizing agent; and
  • c) up to 25 wt-% of hydrofluoric acid,all wt-% are based on the total weight of the composition, the balance is made up by a solvent, preferably water.

In another embodiment the process may be conducted with a wet etchant comprising:

• • a) up to 75 wt-% of organic acid,
  • b) up to 25 wt-% of oxidizing agent; and
  • c) up to 15 wt-% of hydrofluoric acid,all wt-% are based on the total weight of the composition, the balance is made up by a solvent, preferably water.

In an even further embodiment the process may be conducted with a wet etchant comprising:

• • a) up to 60 wt-% of organic acid,
  • b) up to 15 wt-% of oxidizing agent; and
  • up to 10 wt-% of hydrofluoric acid.all wt-% are based on the total weight of the composition, the balance is made up by a solvent, preferably water.

In the process of the present invention, the Al_1-x-zGa_xIn_zAs_1-ySb_y semiconductor surface or structure may be patterned with a masking layer prior to the contact with the etchant. The masking material may be selected from a photo resist, oxides, nitrides, carbides, diamond-film, semiconductors or metals.

In the process of the present invention, one or more cap layer(s) may be applied on the Al_1-x-zGa_xIn_zAs_1-ySb_y semiconductor surface or structure so that patterning of said semiconductor may be achieved without any contact (reaction) between to the surface of the Al_1-x-zGa_xIn_zAs_1-ySb_y semiconductor and the masking material.

The cap layer may be GaSb, InSb, GaAs, InAs, GaInSb, GaInAs, InAsSb, GaAsSb, GaInAsSb or other non-oxidizing material.

The process of the present invention may be conducted in a two-step manner, wherein the Al_1-x-zGa_xIn_zAs_1-ySb_y semiconductor surface or structure is exposed to H₂O₂, and the organic acid and hydrofluoric acid in two separate steps.

In a further aspect, the present invention relates to a semiconductor structure prepared by wet acid etching of Al_1-x-zGa_xIn_zAs_1-ySb_y with 0<x<1, 0<y<1, 0≦z<1 and 0<x+z<1, by contacting a semiconductor comprising Al_1-x-zGa_xIn_zAs_1-ySb_y material with a wet acid etchant comprising:

• • a) organic acid;
  • b) oxidizing agent; and
  • c) hydrofluoric acid.

In the whole or parts of the semiconductor material(s) the structure is composed of, may be n-doped with Tellurium or other n-dopant, or p-doped with Beryllium or other p-dopant.

In another embodiment of the present invention, the etched material is part of a laser, Light-Emitting-Diode (LED), photodetector or optical waveguide structure.

The laser or optical waveguide structure, of which the etched material of the present invention is a part, may be a ridge.

The laser, of which the etched material of the present invention is a part, may be a Fabry Perot laser, Distributed Feedback/Reflector Laser (DFB/DBR) or Interferometric laser (as Y-laser or alike).

In another embodiment of the present invention, the etched material of the semiconductor may be part of a Vertical-Cavity Surface-Emitting Laser (VCSEL).

In a further embodiment of the present invention, the etched material of the semiconductor may be part of a photonic crystal structure as Photonic Crystal Distributed Feedback Laser or alike.

In an even further embodiment of the present invention, the etched material of the semiconductor may be part of an optical sensor.

In a further embodiment, the etchant is mixed with the composition in FIG. 7 or 8 shown to give a uniform isotropic etch across the etched material.

The scope of the invention shall be considered to be covered by the appended independent claims.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 shows SEM images of etch profiles and depths near the photoresist edge for different materials.

FIG. 2 shows etch of Al_0.85Ga_0.15AsSb (lattice matched to GaSb), with low contents of HF. Selectivity of AlGaAsSb over the GaSb cap can be seen (0.3 vol 20% HF in FIG. 9).

FIG. 3 shows etch rates of Al_0.82In_0.06Ga_0.10AsSb (lattice matched to GaSb) for acetic, lactic and citric acid based etchants as a function of H₂O₂ content (see table 2).

FIG. 4 shows etch rates of Al_0.85Ga_0.16As_0.06Sb_0.94 with etchants containing citric and tartaric acid as shown in table 4.

FIG. 5 shows comparison of etch rates for Al_0.80Ga_0.10AsSb and Al_0.82In_0.08Ga_0.10AsSb (lattice matched to GaSb) with the lactic acid based etchant (see table 5).

FIG. 6 shows etch rates of GaAs and GaSb substrates for citric acid and tartaric acid based etchants as shown in table 1.

FIG. 7 shows etch rates from table 3 showing uniform etch across Al_0.82In_0.08Ga_0.10AsSb (lattice matched to GaSb) sample with adjusted concentrations of H₂O₂ in etchant.

FIG. 8 shows etch rates of table 7 which suggests increased etch uniformity from the lactic acid based etchant when adding In to Al_0.90Ga_0.10AsSb (lattice matched to GaSb).

FIG. 9 shows etch selectivity of Al_0.60Ga_0.10AsSb (lattice matched to GaSb) versus the GaSb cap (see table 6). Lowering of the HF concentration, reduces the etch rate of GaSb cap more than for Al_0.90Ga_0.10AsSb.

FIG. 10 shows XPS spectra of Al_0.90Ga_0.10AsSb (lattice matched to GaSb) after etch with etchant with 0.18 M HF

FIG. 11 shows XPS spectra of Al_0.90Ga_0.10AsSb (lattice matched to GaSb) after etch with etchant with 0.9 M HF

FIG. 12 shows XPS spectra of Al_0.90Ga_0.10AsSb (lattice matched to GaSb) after etch with etchant with 0.18 M HF. Al-peak in spectrum shows residue Al oxide on the remaining GaSb substrate after etch.

FIG. 13 shows XPS spectra of Al_0.90Ga_0.10AsSb (lattice matched to GaSb) after etch with etchant with 0.9 M HF. No Al-peak from the remaining GaSb substrate can be seen, but some As and O signal is present (see FIG. 11).

DETAILED DESCRIPTION OF THE INVENTION

The present invention is described with basis in the following, non-limiting examples. The patent is intended to cover all possible variations and adjustments, which may be made, based on the appended claims.

Examples

Solutions of citric acid, tartaric acid, lactic acid and acetic acid with H₂O₂ and HF were made to etch patterns into GaAs, GaSb, AlGaAsSb and AlGaInAsSb. The AlGaAsSb and AlGaInAsSb materials had been grown onto GaSb substrates using Molecular Beam Epitaxy (MBE). Broad stripes of photoresist (PR) coating were applied onto the samples using spin-off, contact exposure, and developer. Etching was then carried out on the different samples for up to one minute (with stirring). The resulting etch rates on AlGaAsSb (˜90% Al), AlInGaAsSb (˜8% In), GaSb and GaAs are shown in graphical form in FIGS. 3-9 and in numerical form in tables 1-7. FIG. 1 shows some etch profiles in different materials, revealing isotropic etching of GaSb and AlGaAsSb (FIGS. 1a and 1b, respectively) and anisotropic etching of GaAs (FIG. 1c). The bending of the photoresist seen in FIG. 1d is associated with a small beak of reaction products that has appeared between the photoresist and the AlGaAsSb material beneath. We found that formation of a beak could be suppressed by using a cap material as shown in FIG. 1b (GaSb cap).

TABLE 1
Etch rates from etch on GaAs and GaSb substrates by citric and
tartaric acid based etchants with 100 ml 2.5 M organic acid,
20 ml 9.8 M H2O2 and 0-5 ml 22.6 M HF
	Tartaric acid	Tartaric acid	Citric acid	Citric acid
HF in	etchant on	etchant on	etchant on	etchant on
etchants	GaAs	GaSb	GaAs	GaSb
[Abs. Vol %]	[μm/min]	[μm/min]	[μm/min]	[μm/min]
0	0.3	0	0.38	0
0.3	0.74	5.5	0.93	4.51
1	0.79	8.45	0.99	7.5
1.6	0.86	7.45	1.08	6.4

TABLE 2
Etch rates from etch on Al0.82In0.08Ga0.1AsSb with 100 ml 2.5 M
organic acid, 1.25-20 ml 9.8 M H2O2 and 5 ml 22.6 M HF.
	H2O2 in	Actetic acid	Lactic acid	Citric acid
	etchant	based etch	based etch	based etch
	[Abs. Vol %]	[μm/min]	[μm/min]	[μm/min]
	0.35	2.96	2.27	2.41
	0.7	5.89	3.78	2.54
	2.6	8.48	8.77	4.75
	4.8	5.6	3.08	5.92

TABLE 3
Uniformity of etch rate for etch on Al0.82In0.08Ga0.1AsSb with
100 ml 2.5 M citric acid, 1.25-20 ml 9.8 M H2O2 and 5 ml 22.6 M HF.
H2O2 in	Sample centre	Sample edge	Change centre
etchant	etch rate	etch rate	vs. edge, etch
[Abs. Vol %]	[μm/min]	[μm/min]	type*
0.35	2.41	2.16	+12%, Anisotropic
0.7	2.54	3.56	−29%, Anisotropic
2.6	4.75	6.40	−26%, Isotropic
4.8	5.92	5.6	+6%, Isotropic
*[Change centre vs. edge] = [Etch rate at sample centre]/[Etch rate at sample edge] − 1

TABLE 4
Etch rates from etch on Al0.85Ga0.15As0.06Sb0.94 by citric and
tartaric acid based etchants with 100 ml 2.5 M organic acid, 20
ml 9.8 M H2O2 and 1-5 ml 22.6 M HF
HF in	Citric acid	Tartaric acid
etchants	etchant	etchant
[Abs. Vol %]	[μm/min]	[μm/min]
0.3	2.74	3.52
1	5.37	6.4
1.6	7.26	9

TABLE 5
Comparison between etch on Al0.9Ga0.1AsSb and
Al0.82In0.08Ga0.1AsSb with 100 ml 2.5 M Lactic
acid, 1.25-20 ml 9.8 M H2O2 and 5 ml 22.6 M HF.
	Lactic acid	Lactic acid
H2O2 in	etch on	etch on
etchant	AlGaAsSb	AlInGaAsSb
[Abs. Vol %]	[μm/min]	[μm/min]
0.35	2.15	2.27
0.7	3.04	3.78
2.6	7.63	8.77
4.8	3.00	3.08

TABLE 6
Selectivity in etch of MBE grown GaSb cap over
Al0.85Ga0.15As0.06Sb0.94 with 100 ml 2.5 M citric
acid, 20 ml 9.8 M H2O2 and 1-5 ml 22.6 M HF.
HF in	Etch rate on	Etch rate on	Selectivity of
etchants	AlGaAsSb	GaSb cap	AlGaAsSb over
[Abs. Vol %]	[μm/min]	[μm/min]	GaSb cap
0.3	2.74	1.54	1.78
1	5.37	4.98	1.08
1.6	7.26	6.78	1.07

TABLE 7
Comparison between etch uniformity on Al0.9Ga0.1AsSb and
Al0.82In0.08Ga0.1AsSb (lattice matched to GaSb) with 100 ml
2.5 M lactic acid, 1.25-20 ml 9.8 M H2O2 and 5 ml 22.6 M HF.
	Etch rate at	Etch rate at	Change	Etch rate at	Etch rate at	Change
H2O2 in	AlGaAsSb	AlGaAsSb	centre	AlInGaAsSb	AlInGaAsSb	centre
etchant	centre	edge	vs.	centre	edge	vs.
[Abs. Vol %]	[μ/min]	[μm/min]	edge*	[μm/min]	[μm/min]	edge*
0.35	2.15	2.24	−4%	2.27	3.10	−27%
0.7	3.04	3.70	−18%	3.78	3.72	+1%
2.6	7.63	8.98	−15%	8.77	8.64	+2%
4.8	3.00	9.68	−69%	3.08	5.2	−41%
*[Change centre vs. edge] = [Etch rate at sample centre]/[Etch rate at sample edge] − 1

It can be seen from table 5 that replacing of 8% the Al with In increases all etch rates.

It can be seen from table 7 that the resulting surface after etch shows better etch uniformity for Al_0.82In_0.08Ga_0.1AsSb than for Al_0.9Ga_0.1AsSb.

It was found that the etchants with citric acid and lactic acid could be used for highly uniform etching of AlGaInAsSb (FIGS. 7 and 8) and fairly good uniform etching of AlGaAsSb (FIG. 8). Selectivity of AlGaAsSb over GaSb could be obtained by reducing HF concentration in the etchant (see FIG. 2). These two results are important in order to utilize the etchants for industrial applications.

From FIG. 6 and table 1, it is seen that the organic acid/H₂O₂ solutions without HF etches GaAs but not GaSb at an observable rate. This suggests that the formed Sb oxide (Sb₂O₃) (see equation 1, page 1) is not significantly dissolved by any of the organic acids, which is in contrast to the chemical equations proposed by P. S. Gladkov at al. (1995). All As oxides are highly soluble in water (M. J. Howes and D. V. Morgan (1985)), whereas Sb oxides are little soluble in water (P. Kofstad (1987)).

Since GaSb is etched by the solution containing HF, the following reaction could apply:

Sb₂O₃+6H⁺+6F⁻->2SbF₂⁺(aq)+2F⁻+3H₂O  (10)

Since HF(aq) is a weak acid, the direct reaction with H⁺:

Sb₂O₃+2H⁺+H₂O=2Sb(OH)₂⁺ (or =2SbO⁺(aq)+H₂O)  (11)

is probably less important. These equations can be seen to explain a process in which HF is speeding up the dissolution of Sb-oxides into the etchant.

Since the Sb oxide is little soluble in water we can probably disregard any influence of such reactions.

The complex acid etches of the GaSb based semiconductors gave isotropic and smooth surfaces (see FIG. 1a-b) for a range of ingredient concentrations. At low H₂O₂ concentration in the etchant, however, most GaSb-based materials showed surface roughness and/or anisotropic etching (see FIGS. 3 and 5). For all etchants, some variation of etch rate was observed across the specimens. Generally, it was observed for all the specimens that the etch rate at the edge of the specimen was different from the etch rate at the middle of the specimen. Local variations of etch rates were also observed and were probably due to diffusion limited reactions: Near PR edges, the etching rate was generally lower than for the open areas far from the PR. The variations could be eliminated or reduced by adjusting the composition of the etchant, as shown in FIGS. 7 and 8, giving an isotropic etch with uniform etch rate and smooth surfaces.

FIGS. 4 and 6 show that the etch rates on GaSb and AlGaAsSb increase with increasing HF content in the tartaric and citric acid based etchants. The small drop to in etch rate of GaSb (FIG. 6) for the highest concentration of HF indicates a second diffusion-limited reaction in our etchants. This might be explained via the increased reaction rates for HF-related reactions with increased HF concentration. At high reaction rates, reaction products may not have time to diffuse away, causing reduced etch rates. At even higher HF concentrations, concentration gradients will be reduced, contributing to less diffusion of products and thereby a further reduction in the etch rate.

Our results show that the organic acid based etchant can have good uniformity during etch of AlGaAsSb and AlInGaAsSb materials, resulting in good planarity and smooth surfaces. Results also show highly uniform etch regions of some etchants (FIGS. 7 and 8). This can indicate that citric acid and lactic acid are favorable over acetic acid and tartaric acid for etching AlInGaAsSb. We also showed that increased selectivity of AlGaAsSb over the GaSb cap can be obtained by adjusting the HF composition of the etchant (FIG. 9).

X-Ray Photoelectron Spectroscopy (XPS)

To examine surface composition of AlGaAsSb after etch, x-ray photoelectron spectroscopy (XPS) experiments were carried out. Pieces of the same material without PR were etched and XPS spectra collected from the samples. XPS spectra from the characterization of etched AlGaAsSb is shown in FIG. 10-13.

In order to carry out these XPS examinations, two specimens of a 2 μm thick Al_0.85Ga_0.15As_0.06Sb_0.94 epilayer on a GaSb substrate were etched for one minute in an etchant with 2.5 M citric acid, 9.8 M H₂O₂ and HF (100:20:x), one solution with 0.18 M HF (x=1) and one with 0.9 M HF (x=5, see FIG. 4 or table 4 for etch rates). This was supposed to remove the 2 μm thick AlGaAsSb epilayer, so that only the GaSb along with any surface oxides would be present.

XPS measurements revealed residue Al on/near the surface of the etched specimen with etchant containing little HF (0.18 M) (see FIG. 12). This specimen also showed oxygen peaks, but very little Ga-signal, indicating an Al-containing oxide remaining on the surface. This was not the case when etching with the etchant containing more HF (0.9 M). This specimen showed no Al 2p peak (FIG. 13), which indicates that the Al-containing oxide is removed on/near the surface. The low HF-containing etchant might not have removed all of the epilayer material, probably due to a low dissolution rate of the Al-oxide which leaves Al-containing residues.

Comparing FIGS. 4 and 6, we can see that the etch rate of AlGaAsSb (FIG. 4) can increase to above that of the GaSb substrate (FIG. 6) when increasing the HF concentration in the etchant. This means that the etch rate of As- or Al-oxide increase with HF concentration to a level above that of Ga- and/or Sb-oxide. The As 3d peak (FIGS. 10 and 11) was present in both specimens, which indicates that there is some As-containing residue left on both surfaces. By also considering the 85% Al and 6% As content of the AlGaAsSb material, the Al oxide must be much more soluble than the As oxide for the high HF-containing etchant (with 0.9 M HF, i.e. 1.6 Vol % HF). We can therefore conclude that the reaction with HF is faster for Al than for Ga, meaning that the Ga-citrate formation proposed in equation (8) and (9) must be important for the present invention.

The patent is intended to cover all possible variations and adjustments which may appear obvious for a person skilled in the art after reading this specification.

Claims

1. A wet acid etchant for wet acid etching of intrinsic, n-doped or p-doped Al1-x-zGaxInzAs1-ySby with 0<x<1, 0<y<1, 0≦z<1 and 0<x+z<1, comprising: a) organic acid;b) oxidizing agent; andc) hydrofluoric acid.

2. The wet acid etchant according to claim 1, wherein the organic acid is neat or a mixture.

3. The wet acid etchant according to claim 1, wherein the organic acid is selected from citric acid, lactic acid, acetic acid and tartaric acid.

4. The wet acid etchant according to claim 1, wherein when z=0, the organic acid is selected from citric acid, lactic acid and acetic acid.

5. The wet acid etchant according to claim 1, wherein the oxidizing agent is hydrogen peroxide (H2O2).

6. The wet acid etchant according to claim 1, wherein the oxidizing agent is an oxide-forming chemical, e.g. NaOCl or Ozone.

7. The wet acid etchant according to claim 1, wherein the wet etchant comprises: a) up to 90 wt-% of organic acid,b) up to 50 wt-% of oxidizing agent; andc) up to 25 wt-% of hydrofluoric acid,

8. The wet acid etchant according to claim 6, wherein the wet acid etchant comprises: a) up to 75 wt-% of organic acid,b) up to 25 wt-% of oxidizing agent; andc) up to 15 wt-% of hydrofluoric acid,

9. The wet acid etchant according to claim 6, wherein the wet acid etchant comprises: a) up to 60 wt-% of organic acid,b) up to 15 wt-% of oxidizing agent; andc) up to 10 wt-% of hydrofluoric acid,

10. A process for wet acid etching of intrinsic, n-doped or p-doped Al1-x-zGaxInzAs1-ySby with 0<x<1, 0<y<1, 0≦z<1 and 0<x+z<1, comprising contacting an Al1-x-zGaxInzAs1-ySby material with a wet acid etchant comprising: a) organic acid;b) oxidizing agent, andc) hydrofluoric acid.

11. The process according to claim 10, wherein the organic acid is neat or a mixture.

12. The process according to claim 10, wherein the organic acid is selected from citric acid, lactic acid, acetic acid and tartaric acid.

13. The process according to claim 10, wherein when z=0, the organic acid is selected from citric acid, lactic acid and acetic acid.

14. The process according to claim 10, wherein the oxidizing agent is hydrogen peroxide (H2O2).

15. The process according to claim 10, wherein the oxidizing agent is an oxide-forming chemical, e.g. NaOCl or Ozone.

16. The process according to claim 10, wherein the wet etchant comprises: a) up to 90 wt-% of organic acid,b) up to 50 wt-% of oxidizing agent; andc) up to 25 wt-% of hydrofluoric acid,

17. The process according to claim 10, wherein the wet acid etchant comprises: a) up to 75 wt-% of organic acid,b) up to 25 wt-% of oxidizing agent; andc) up to 15 wt-% of hydrofluoric acid,

18. The process according to claim 10, wherein the wet acid etchant comprises: a) up to 60 wt-% of organic acid,b) up to 15 wt-% of oxidizing agent; andc) up to 10 wt-% of hydrofluoric acid,

19. The process according to claim 10, wherein the Al1-x-zGaxInzAs1-ySby semiconductor surface or structure is patterned with a masking layer prior to the contact with the etchant.

20. The process according to claim 19, wherein the masking material is selected from a photo resist, oxides, nitrides, carbides, diamond-film, semiconductors or metals.

21. The process according to claim 19, wherein one or more cap layer(s) is (are) applied on the Al1-x-zGaxInzAs1-ySby semiconductor surface or structure so that patterning of said semiconductor is achieved without any reaction at the interface between the surface of the Al1-x-zGaxInzAs1-ySby semiconductor and the masking material.

22. The process according to claim 21, wherein the cap layer is GaSb, InSb, GaAs, InAs, GaInSb, GaInAs, InAsSb, GaAsSb, GaInAsSb or other non-oxidizing material.

23. The process according to claim 10 wherein the Al1-x-zGaxInzAs1-ySby semiconductor surface or structure is exposed to H2O2, and the organic acid and hydrofluoric acid in a two step manner.

24-31. (canceled)