Etching of AIIIBV compounds

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H01L21/30612

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/30612Etching of AIIIBV compounds

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Patents Grantslast 30 patents

Information Patent Grant
Nitride-based semiconductor device and method for manufacturing the...
- Patent number 12,154,980
- Issue date Nov 26, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure comprising p-type N-face GAN-based semicond...
- Patent number 12,080,786
- Issue date Sep 3, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate processing apparatus, substrate processing system, and su...
- Patent number 12,062,563
- Issue date Aug 13, 2024
- Ebara Corporation
- Itsuki Kobata
- B24 - GRINDING POLISHING
Information Patent Grant
CMOS compatible low-resistivity Al—Sc metal etch stop
- Patent number 12,034,050
- Issue date Jul 9, 2024
- National Technology & Engineering Solutions of Sandia, LLC
- Giovanni Esteves
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing high electron mobility transistors having...
- Patent number 12,015,075
- Issue date Jun 18, 2024
- MACOM Technology Solutions Holdings, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor and radio-frequency power amplifier module
- Patent number 11,978,786
- Issue date May 7, 2024
- Murata Manufacturing Co., Ltd.
- Isao Obu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for etch depth control in III-V semiconductor dev...
- Patent number 11,948,801
- Issue date Apr 2, 2024
- NEXGEN POWER SYSTEMS, INC.
- Wayne Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Regrowth uniformity in GaN vertical devices
- Patent number 11,916,134
- Issue date Feb 27, 2024
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method for the semiconduc...
- Patent number 11,876,129
- Issue date Jan 16, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High Electron Mobility Transistor (HEMT) with a back barrier layer
- Patent number 11,855,199
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ling Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-dimensional vertical fins
- Patent number 11,823,956
- Issue date Nov 21, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,817,451
- Issue date Nov 14, 2023
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V fins by aspect ratio trapping and self-aligned etch to remove...
- Patent number 11,776,956
- Issue date Oct 3, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device
- Patent number 11,721,770
- Issue date Aug 8, 2023
- United Microelectronics Corp.
- Chin-Hung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Removing or preventing dry etch-induced damage in Al/In/GaN films b...
- Patent number 11,715,635
- Issue date Aug 1, 2023
- Morteza Monavarian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor
- Patent number 11,705,509
- Issue date Jul 18, 2023
- Murata Manufacturing Co., Ltd.
- Yasunari Umemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a device structure using selective deposition of...
- Patent number 11,658,029
- Issue date May 23, 2023
- ASM IP Holding B.V.
- Sourish Banerjee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Low-leakage regrown GaN p-n junctions for GaN power devices
- Patent number 11,626,483
- Issue date Apr 11, 2023
- Arizona Board of Regents on behalf of Arizona State University
- Yuji Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,626,511
- Issue date Apr 11, 2023
- Murata Manufacturing Co., Ltd.
- Isao Obu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and power amplifier module
- Patent number 11,621,678
- Issue date Apr 4, 2023
- Murata Manufacturing Co., Ltd.
- Isao Obu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistors and power amplifiers including s...
- Patent number 11,616,136
- Issue date Mar 28, 2023
- Wolfspeed, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor
- Patent number 11,610,989
- Issue date Mar 21, 2023
- United Microelectronics Corp.
- Chun-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical-cavity surface-emitting laser fabrication on large wafer
- Patent number 11,588,299
- Issue date Feb 21, 2023
- Mellanox Technologies, Ltd.
- Vladimir Iakovlev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride devices with improved RF performance and their me...
- Patent number 11,557,667
- Issue date Jan 17, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS compatible isolation leakage improvements in gallium nitride t...
- Patent number 11,527,610
- Issue date Dec 13, 2022
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage p-channel FET based on III-nitride heterostructures
- Patent number 11,522,080
- Issue date Dec 6, 2022
- Cornell University
- Samuel James Bader
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High breakdown voltage structure for high performance GaN-based HEM...
- Patent number 11,515,407
- Issue date Nov 29, 2022
- Intel Corporation
- Glenn Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor and method for producing the same
- Patent number 11,508,835
- Issue date Nov 22, 2022
- Murata Manufacturing Co., Ltd.
- Yasunari Umemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,456,294
- Issue date Sep 27, 2022
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate processing apparatus, substrate processing system, and su...
- Patent number 11,450,544
- Issue date Sep 20, 2022
- Ebara Corporation
- Itsuki Kobata
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
REGROWTH UNIFORMITY IN GAN VERTICAL DEVICES
- Publication number 20240258408
- Publication date Aug 1, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR ETCH DEPTH CONTROL IN III-V SEMICONDUCTOR DEV...
- Publication number 20240242969
- Publication date Jul 18, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Wayne CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING COMPOSITIONS
- Publication number 20240174924
- Publication date May 30, 2024
- Fujifilm Electronic Materials U.S.A., Inc.
- Emil A. Kneer
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH A BACK BARRIER LAYER
- Publication number 20240088284
- Publication date Mar 14, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chia-Ling YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20240071758
- Publication date Feb 29, 2024
- UNITED MICROELECTRONICS CORP.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN-BASED TRENCH METAL OXIDE SCHOTTKY BARRIER DIODE AND PREPARATION...
- Publication number 20240063311
- Publication date Feb 22, 2024
- SUN YAT-SEN UNIVERSITY
- Yang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR...
- Publication number 20240063260
- Publication date Feb 22, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-DIMENSIONAL VERTICAL FINS
- Publication number 20240047274
- Publication date Feb 8, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE DRAIN STRUCTURES AND METHODS OF FORMING THE SAME
- Publication number 20230387203
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Ming CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE MANUFACTURING METHOD AND STRUCTURE MANUFACTURING APPARATUS
- Publication number 20230343597
- Publication date Oct 26, 2023
- Sumitomo Chemical Company, Limited
- Fumimasa HORIKIRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230326758
- Publication date Oct 12, 2023
- Mitsubishi Electric Corporation
- Koichiro NISHIZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20230147426
- Publication date May 11, 2023
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20230144369
- Publication date May 11, 2023
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRODUCTION APPARATUS FOR PRODUCING STRUCTURAL BODY AND PRODUCTION M...
- Publication number 20230099777
- Publication date Mar 30, 2023
- SCIOCS Company Limited
- Fumimasa HORIKIRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230025796
- Publication date Jan 26, 2023
- SEIKO EPSON CORPORATION
- Hiroyuki Shimada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH A BACK BARRIER LAYER
- Publication number 20220384630
- Publication date Dec 1, 2022
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chia-Ling YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING SYSTEM, AND SU...
- Publication number 20220375775
- Publication date Nov 24, 2022
- EBARA CORPORATION
- Itsuki KOBATA
- B24 - GRINDING POLISHING
Information Patent Application
METHODS OF MANUFACTURING HIGH ELECTRON MOBILITY TRANSISTORS HAVING...
- Publication number 20220376085
- Publication date Nov 24, 2022
- Cree, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE REMOVAL OF SEMICONDUCTOR FINS
- Publication number 20220344211
- Publication date Oct 27, 2022
- TESSERA LLC
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING STRUCTURE, AND STRUCTURE
- Publication number 20220285525
- Publication date Sep 8, 2022
- SCIOCS COMPANY LIMITED
- Fumimasa HORIKIRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING STRUCTURE
- Publication number 20220270887
- Publication date Aug 25, 2022
- SCIOCS COMPANY LIMITED
- Fumimasa HORIKIRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-DIMENSIONAL VERTICAL FINS
- Publication number 20220223477
- Publication date Jul 14, 2022
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-POLAR III-N SEMICONDUCTOR DEVICE STRUCTURES
- Publication number 20220223429
- Publication date Jul 14, 2022
- The Regents of the University of California
- Brian Romanczyk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE MANUFACTURING METHOD AND INTERMEDIATE STRUCTURE
- Publication number 20220148883
- Publication date May 12, 2022
- SCIOCS COMPNY LIMITED
- Fumimasa HORIKIRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR SEMICONDUCTOR FILM LIFT-OFF AND SUBSTRATE TRANSFER
- Publication number 20220148877
- Publication date May 12, 2022
- Yiguan information technology (Shanghai) Co., Ltd.
- Tao Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH A BACK BARRIER LAYER
- Publication number 20220140123
- Publication date May 5, 2022
- Taiwan Semiconductor Manufacturing Co, Ltd.
- Chia-Ling YEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR AND METHOD FOR PRODUCING THE SAME
- Publication number 20220130983
- Publication date Apr 28, 2022
- Murata Manufacturing Co., Ltd.
- Yasunari UMEMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REMOVING OR PREVENTING DRY ETCH-INDUCED DAMAGE IN Al/In/GaN FILMS B...
- Publication number 20220068632
- Publication date Mar 3, 2022
- UNM Rainforest Innovations
- Morteza MONAVARIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR AND RADIO-FREQUENCY POWER AMPLIFIER MODULE
- Publication number 20220029004
- Publication date Jan 27, 2022
- Murata Manufacturing Co., Ltd.
- Isao OBU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20220005957
- Publication date Jan 6, 2022
- UNITED MICROELECTRONICS CORP.
- Chin-Hung Chen
- H01 - BASIC ELECTRIC ELEMENTS

Etching of AIIIBV compounds

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Nitride-based semiconductor device and method for manufacturing the...

Semiconductor structure comprising p-type N-face GAN-based semicond...

Substrate processing apparatus, substrate processing system, and su...

CMOS compatible low-resistivity Al—Sc metal etch stop

Methods of manufacturing high electron mobility transistors having...

Bipolar transistor and radio-frequency power amplifier module

Method and system for etch depth control in III-V semiconductor dev...

Regrowth uniformity in GaN vertical devices

Semiconductor structure and manufacturing method for the semiconduc...

High Electron Mobility Transistor (HEMT) with a back barrier layer

Two-dimensional vertical fins

Semiconductor device and manufacturing method thereof

III-V fins by aspect ratio trapping and self-aligned etch to remove...

Manufacturing method of semiconductor device

Removing or preventing dry etch-induced damage in Al/In/GaN films b...

Heterojunction bipolar transistor

Method of forming a device structure using selective deposition of...

Low-leakage regrown GaN p-n junctions for GaN power devices

Semiconductor device

Semiconductor device and power amplifier module

High electron mobility transistors and power amplifiers including s...

High electron mobility transistor

Vertical-cavity surface-emitting laser fabrication on large wafer

Group III-nitride devices with improved RF performance and their me...

CMOS compatible isolation leakage improvements in gallium nitride t...

High-voltage p-channel FET based on III-nitride heterostructures

High breakdown voltage structure for high performance GaN-based HEM...

Bipolar transistor and method for producing the same

Semiconductor device and manufacturing method thereof

Substrate processing apparatus, substrate processing system, and su...

Patents Applicationslast 30 patents

REGROWTH UNIFORMITY IN GAN VERTICAL DEVICES

METHOD AND SYSTEM FOR ETCH DEPTH CONTROL IN III-V SEMICONDUCTOR DEV...

ETCHING COMPOSITIONS

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH A BACK BARRIER LAYER

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

GAN-BASED TRENCH METAL OXIDE SCHOTTKY BARRIER DIODE AND PREPARATION...

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR...

TWO-DIMENSIONAL VERTICAL FINS

GALLIUM NITRIDE DRAIN STRUCTURES AND METHODS OF FORMING THE SAME

STRUCTURE MANUFACTURING METHOD AND STRUCTURE MANUFACTURING APPARATUS

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

PRODUCTION APPARATUS FOR PRODUCING STRUCTURAL BODY AND PRODUCTION M...

SEMICONDUCTOR DEVICE

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH A BACK BARRIER LAYER

SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING SYSTEM, AND SU...

METHODS OF MANUFACTURING HIGH ELECTRON MOBILITY TRANSISTORS HAVING...

SELECTIVE REMOVAL OF SEMICONDUCTOR FINS

METHOD FOR MANUFACTURING STRUCTURE, AND STRUCTURE

METHOD FOR MANUFACTURING STRUCTURE

TWO-DIMENSIONAL VERTICAL FINS

N-POLAR III-N SEMICONDUCTOR DEVICE STRUCTURES

STRUCTURE MANUFACTURING METHOD AND INTERMEDIATE STRUCTURE

METHOD FOR SEMICONDUCTOR FILM LIFT-OFF AND SUBSTRATE TRANSFER

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH A BACK BARRIER LAYER

BIPOLAR TRANSISTOR AND METHOD FOR PRODUCING THE SAME

REMOVING OR PREVENTING DRY ETCH-INDUCED DAMAGE IN Al/In/GaN FILMS B...

BIPOLAR TRANSISTOR AND RADIO-FREQUENCY POWER AMPLIFIER MODULE

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE