Patent Application
20240109017
This application is based on and claims priority under 35 U.S.C. § 119 to Korean Patent Application No. 10-2022-0124522, filed on Sep. 29, 2022, in the Korean Intellectual Property Office, the disclosure of which is incorporated by reference herein in its entirety.
The inventive concepts relate to exhaust systems and/or exhaust methods, which use a buffer, and more particularly, to exhaust systems and/or exhaust methods, which treat waste gas generated after a semiconductor process.
A semiconductor chip may be manufactured through various processes for a silicon wafer or the like. For example, a semiconductor chip may be manufactured through a deposition process, an etching process, a developing process, an exposure process, or the like. To manufacture a semiconductor chip, various materials may be used in liquid, gas, or plasma form. Gas discharged from a process chamber for manufacturing a semiconductor chip may include various contaminants. These contaminants can be harmful to humans or the environment. Therefore, it is necessary to treat contaminants before discharging the gas discharged from the process chamber to the outside.
The inventive concepts provide exhaust systems and/or exhaust methods, which are capable of effectively mitigating or preventing a clogging phenomenon and blockage of pipes by waste gas in the pipes.
In addition, problems to be solved by the inventive concepts are not limited to the above-mentioned problems, and other problems can be clearly understood by those skilled in the art from the description below.
According to an aspect of the inventive concepts, an exhaust system may include a process chamber in which a semiconductor processing is performed, a buffer connected to the process chamber, the buffer configured to receive waste gas generated during the semiconductor processing and dualize and disperse powder generated from the waste gas, a reactor configured to burn the waste gas, a wet tank connected to the reactor, arranged below the reactor, and configured to store cleaning water, and a wet tower configured to decompose the powder in the waste gas by using the cleaning water
According to another aspect of the inventive concepts, an exhaust system may include a process chamber in which a semiconductor processing is performed, a buffer connected to the process chamber and configured to receive waster gas generated during the semiconductor processing, the buffer including a lower internal space and an upper internal space, a first reactor configured to heat-treat and burn the waste gas, a plurality of valves between the buffer and the first, a wet tank connected to the first reactor, arranged below the first reactor, and configured to store cleaning water, a wet tower configured to perform cleaning treatment on the waste gas by using the cleaning water, and a controller configured to control opening and closing of the plurality of valves, the plurality of valves including a first valve and a second valve, wherein the buffer includes a first outlet in communication with the upper internal space and a second outlet in communication with the lower internal space, and is further configured to dualize and disperse powder generated from the waste gas, and the plurality of valves include the first valve configured to adjust fluid flow between the first outlet and the first reactor to each other and the second valve configured to adjust fluid flow between the second outlet and the first reactor to each other.
According to another aspect of the inventive concepts, an exhaust method may include performing a semiconductor processing, supplying waste gas generated during the semiconductor processing to a buffer, dualizing and dispersing the supplied waste gas by using the buffer, supplying the dispersed waste gas to at least one reactor, performing heat treatment on the supplied waste gas, and cleaning the heat-treated waste gas by using a cleaning water.
Some example embodiments of the inventive concepts will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings in which:
The inventive concepts will now be described more fully with reference to the accompanying drawings, in which some example embodiments of the inventive concepts are shown. Like reference numerals in the drawings denote like elements, and thus their description will be omitted.
As used herein, expressions such as “at least one of,” when preceding a list of elements, modify the entire list of elements and do not modify the individual elements of the list. Thus, for example, both “at least one of A, B, or C” and “at least one of A, B, and C” mean either A, B, C or any combination thereof. Likewise, A and/or B means A, B, or A and B.
While the term “same,” “equal” or “identical” is used in description of example embodiments, it should be understood that some imprecisions may exist. Thus, when one element is referred to as being the same as another element, it should be understood that an element or a value is the same as another element within a desired manufacturing or operational tolerance range (e.g., ±10%).
When the terms “about” or “substantially” are used in this specification in connection with a numerical value, it is intended that the associated numerical value includes a manufacturing or operational tolerance (e.g., ±10%) around the stated numerical value. Moreover, when the words “about” and “substantially” are used in connection with geometric shapes, it is intended that precision of the geometric shape is not required but that latitude for the shape is within the scope of the disclosure. Further, regardless of whether numerical values or shapes are modified as “about” or “substantially,” it will be understood that these values and shapes should be construed as including a manufacturing or operational tolerance (e.g., ±10%) around the stated numerical values or shapes.
Referring to
A semiconductor process may be performed in the process chamber 110. Here, the semiconductor process may include processes for manufacturing a semiconductor. For example, a semiconductor process may include an ion implantation process, a deposition process, an exposure process, a developing process, an etching process, a cleaning process, a drying process, or the like. Waste gas generated during or after a semiconductor process may be discharged from the process chamber 110 through a pipe. The waste gas may be introduced into the buffer 200 through a pipe connecting the process chamber 110 and the buffer 200 to each other.
The waste gas generated during or after the semiconductor process may include at least one of a basic gas, an acid gas, and a volatile organic material. The basic gas may include, for example, ammonia (NH3) or the like. The acidic gas may include, for example, hydrochloric acid (HCl), hydrogen fluoride (HF), diborane (B2H6), boron trichloride (BCl3), or the like. The waste gas generated during or after the semiconductor process may form a solid precipitate of silicon powders by a physical or chemical reaction in the pipe. For example, the solid precipitate may include solid particulates, such as SiO2.
The buffer 200 may include an inlet 210 (refer to
A first valve V1 may be installed between pipes connecting the first outlet 220 of the buffer 200 and the reactor 120 to each other. Also, a second valve V2 may be installed between the pipes connecting the second outlet 230 of the buffer 200 and the reactor 120 to each other. In other words, the first valve V1 may be installed between the first outlet 220 of the buffer 200 and the reactor 120 and adjust fluid flow between the first outlet 220 of the buffer 200 and the reactor 120. the second valve V2 may be installed between the second outlet 230 of the buffer 200 and the reactor 120 and adjust fluid flow between the second outlet 230 of the buffer 200 and the reactor 120.
The exhaust system 10 may further include a heating jacket 212 and a power sensor 214.
The heating jacket 212 may be in contact with the buffer 200 and heat the buffer 200. The heating jacket 212 may surround the buffer 200. The heating jacket 212 may mitigate or prevent powder generated from waste gas from being fixed on an inner wall of the buffer 200 by applying heat to the buffer 200.
The power sensor 214 may be a sensor that measures the amount of powder generated in the buffer 200. Also, the power sensor 214 may measure the amount of powder introduced into the buffer 200 from the process chamber 110. That is, the power sensor 214 may be connected to the buffer 200 to measure the total amount of powder present in the buffer 200. The power sensor 214 may transmit the measured amount of powder to the controller 160.
The controller 160 may control the opening and closing of the first valve V1 and the second valve V2. The controller 160 may control any one of the first valve V1 and the second valve V2, based on the amount of powder measured by the power sensor 214.
In some example embodiments, the controller 160 may open the first valve V1 and close the second valve V2 when the amount of powder is lower than a desired (or alternatively, preset) reference value. In some example embodiments, the controller 160 may close the first valve V1 and open the second valve V2 when the amount of powder is lower than a desired (or alternatively, preset) reference value. Also, in some example embodiments, the controller 160 may open both of the first valve V1 and the second valve V2 when the amount of powder is higher than a desired (or alternatively, preset) reference value.
Waste gas generated during or after a semiconductor process may be introduced into the buffer 200 through the inlet 210. In other words, the buffer 200 may be configured to receive waste gas generated during or after a semiconductor process from the process chamber. Here, a pump P may be connected to a pipe connected to the process chamber 110 and the inlet 210. The pump P may provide flow power to the pipe.
The buffer 200 may retain waste gas in the internal space thereof for a certain period of time. The buffer 200 may dualize and disperse powder generated from the waste gas. For example, among the powder, first powder P1 having a relatively small particle size may be discharged through the first outlet 220. Further, among the powder, second powder P2 having a relatively large particle size may be discharged through the second outlet 230. The first powder P1 may have a lighter particle size than that of the second powder P2. Further, waste gas may be discharged through the first outlet 220 and the second outlet 230.
In addition, the buffer 200 may further include an ultrasonic vibrator (not shown) being in contact with the buffer 200 and configured to generate ultrasonic waves in the buffer 200. The ultrasonic vibrator may mitigate or prevent powder from being fixed or adhered to the inner wall of the buffer 200 by transmitting ultrasonic waves to the buffer 200.
Waste gas and powder (e.g., the first powder P1 and the second powder P2) may be introduced into the reactor 120 from the buffer 200 through a pipe connected to the buffer 200. The reactor 120 may burn the waste gas, the first powder P1, and the second powder P2. The reactor 120 may heat the waste gas, the first powder P1, and the second powder P2 to about 100° C. to about 1500° C. Accordingly, by-products generated from the waste gas, the first powder P1, and the second powder P2 may be primarily removed through the reactor 120. Further, the reactor 120 may decompose the waste gas at a high temperature by burning the waste gas. The waste gas, the first powder P1, and the second powder P2, which are heated by the reactor 120, may be introduced into the wet tank 130.
The wet tank 130 may be connected to the reactor 120 through a pipe. The wet tank 130 may be arranged below the reactor 120 and provide a storage space for cleaning water. The wet tank 130 may dissolve the first powder P1 and the second powder P2 included in the waste gas. For example, ammonia (NH3), hydrochloric acid (HCl), or chlorine (Cl2) may be dissolved in the cleaning water. Also, because the cleaning water includes water, the first powder P1 and the second powder P2 may be hydrolyzed.
The wet tower 140 may include a nozzle installed inside the wet tower 140. The wet tower 140 may spray the cleaning water to the waste gas through the nozzle. The wet tower 140 may purify the waste gas by using the cleaning water. Further the wet tower 140 may decompose powder in the waste gas. The powder of the waste gas may be secondarily removed and purified through the wet tank 130 and the wet tower 140. The wet tower 140 may include an exhaust pipe 145 arranged at an upper portion of the wet tower 140 and exhausting purified gas. Gas discharged through the exhaust pipe 145 may be finally purified gas and may not include powder or the like.
Referring to (a) and (b) of
Referring to (a) of
Further, referring to (b) of
The buffer 200 may include a first sidewall S1, the bottom surface S2, and a second sidewall S3, which define the lower internal space BSP. The first sidewall S1 and the second sidewall S3 may be sidewalls extending in a straight-line shape. The internal space of the buffer 200 may be divided in the upper internal space TSP and the lower internal space BSP, based on a horizontal plane A including corners where the first sidewall S1 and the second sidewall S3 start to incline, respectively. The inlet 210 may be installed on the first sidewall S1, and the second outlet 230 may be installed on the second sidewall S3. A degree of inclination of the first sidewall S1 with respect to a vertical direction may equal to a degree of inclination of the second sidewall S3 with respect to the vertical direction. That is, the first sidewall S1 and the second sidewall S3 may be symmetrical to each other.
Waste gas and powder (e.g., the first powder P1 and the second powder P2) introduced through the inlet 210 may flow in the internal space of the buffer 200. The waste gas and powder may collide with the sidewalls of the buffer 200 to form vortices. At this time, the first powder P1, which has a relatively small particle size, may flow in the upper internal space TSP of the buffer 200. On the contrary, the second powder P2, which has a relatively large particle size, may sink into the lower internal space BSP of the buffer 200.
The waste gas, the first powder P1, and the second powder P2 may be discharged to the first outlet 220 or the second outlet 230 by flow power transmitted from the pump P. Here, the first powder P1 and the waste gas, which form a vortex around the first outlet 220, may be discharged through the first outlet 220. The second powder P2 and the waste gas, which form a vortex around the second outlet 230, may be discharged through the second outlet 230.
In some example embodiments, a diameter of each of the inlet 210, the first outlet 220, and the second outlet 230 may range from about 100 mm to about 150 mm. In some example embodiments, a diameter of each of the inlet 210, the first outlet 220, and the second outlet 230 may range from about 110 mm to about 140 mm. In some example embodiments, a diameter of each of the inlet 210, the first outlet 220, and the second outlet 230 may range from about 120 mm to about 130 mm.
Referring to
The buffer 200a may include a first sidewall S1a, a second sidewall S3a, and the bottom surface S2a, which define a lower internal space BSPa. A length L1 of the first sidewall S1a in an extension direction may be less than a length L2 of the second sidewall S3a in an extension direction. The first sidewall S1a and the second sidewall S3a may be sidewalls extending in a straight-line shape.
In some example embodiments, an angle at which the bottom surface S2a of the buffer 200 is inclined with respect to a direction in which the second outlet 230 extends may range from about 15° to about 20°. In some example embodiments, an angle at which the bottom surface S2a of the buffer 200 is inclined with respect to a direction in which the second outlet 230 extends may range from about 5° to about 30°.
Referring to
The second powder P2 precipitated in the lower internal space BSPb may be precipitated along the first sidewall S1b or the second sidewall S3b. The second powder P2 may be precipitated at a location adjacent to the second outlet 230, and may be discharged to the second outlet 230 by pressure applied from the pump P.
Here, because the first sidewall S1b and the second sidewall S3b extend in a curved and straight-line shape, respectively, a phenomenon in which powder is adhered on the first sidewall S1b and the second sidewall S3b may be reduced or prevented.
Referring to
The sidewall S1c may have a symmetrical shape with respect to a central axis of the buffer 200c in a vertical direction. An upper internal space TSPc and the lower internal space BSPc of the buffer 200c may be divided by a horizontal plane including corners, from each of which the curved surface of the sidewall S1c starts.
The upper internal space TSPc of the buffer 200c may be greater than the lower internal space BSPc of the buffer 200c. The second powder P2 floating in the lower internal space BSPc may be precipitated at the lowest end of the lower internal space BSPc in a vertical level, and may be discharged through the second outlet 230 by pressure applied from the pump P.
Referring to
The plurality of buffer members t1, t2, and t3 may extend in parallel to the bottom surface S2d from the first and second sidewalls S1d and S3d of the buffer 200d, respectively. That is, the extension directions of the plurality of buffer members t1, t2, and t3 and the extension direction of the bottom surface S2d may be parallel to each other. A width of each of the plurality of buffer members t1, t2, and t3 in a horizontal direction may be less than a width of an upper surface of the buffer 200d. In addition, the width of each of the plurality of buffer members t1, t2, and t3 in the horizontal direction may be greater than or equal to the width of the bottom surface S2d of the buffer 200d.
Also, the plurality of buffer members t1, t2, and t3 may be arranged in a zigzag pattern, when viewed in a cross-section, in the lower internal space BSPd to delay the retention of the powder (e.g., the second powder P2) in the buffer 200d. The second powder P2 may form a flow in an S direction (e.g., along an S shaped path) in the lower internal space BSPd.
Referring to
The second reactor 320 may belong to a separate exhaust system arranged in parallel with the exhaust system 10a. For example, the second reactor 320 may be connected to a separate pipe other than a pipe connected to the first valve V1 or the second valve V2. Further, the second reactor 320 may be connected to a separate wet tank and wet tower, which perform the same functions as the wet tank 130 and the wet tower 140 of the exhaust system 10, respectively.
That is, the second reactor 320 may belong to a separate exhaust system arranged in parallel with the exhaust system 10a and performing the same function as the exhaust system 10a. That is, the exhaust system 10a may correspond to a first exhaust system, and the exhaust system to which the second reactor 320 belongs may correspond to a second exhaust system.
The second exhaust system may include the same components as that of the first exhaust system. For example, the second exhaust system may include a process chamber, a buffer, a powder sensor, a heating jacket, a reactor, a controller, a wet tank, a wet tower, a pipe, or the like.
Here, the first valve V1 and the second valve V2 may each be a three-way valve. A pipe branched from the buffer 200 may be connected to the first reactor 122 or the second reactor 320 through the first valve V1 and the second valve V2.
In some example embodiments, the controller 160 may open and close the first valve V1 and the second valve V2. In some example embodiments, when a pipe connecting the first outlet 220 and the first reactor 122 to each other is clogged, the controller 160 may control the first valve V1 to allow waste gas and powder to flow from the buffer 200 to the second reactor 320.
For example, the controller 160 may block waste gas flowing from the buffer 200 to the first reactor 122 by closing a portion of the first valve V1, the portion being connected to the first reactor 122. Further, the controller 160 may allow waste gas to flow from the buffer 200 to the second reactor 320 by opening a portion of the first valve V1, the portion being connected to the second reactor 320.
Also, in some example embodiments, when a pipe connecting the second outlet 230 and the first reactor 122 to each other is clogged, the controller 160 may control the second valve V2 to allow the waste gas and powder to flow from the buffer 200 to the second reactor 320. The case in which a pipe is clogged may mean a case in which waste gas and powder in the pipe may not flow due to the powder (e.g., the first powder P1 or the second powder P2) accumulated in the pipe.
For example, the controller 160 may block waste gas flowing from the buffer 200 to the first reactor 122 by closing a portion of the second valve V2, the portion being connected to the first reactor 122. Further, the controller 160 may allow waste gas to flow from the buffer 200 to the second reactor 320 by opening a portion of the second valve V2, the portion being connected to the second reactor 320.
Referring to
Referring to
After the waste gas is supplied to the buffer 200, the buffer 200 may dualize and disperse the waste gas. Here, dualizing and dispersing may mean dividing and discharging waste gas and powder generated from the waste gas into powder having a relatively small particle size (e.g., the first powder P1 of
For example, the buffer 200 may discharge the first powder P1 having a relatively light component among the powder supplied through the inlet 210 through the first outlet 220, and may discharge the second powder P2 having a relatively heavy component through the second outlet 230. Because the buffer 200 has a tapered shape in which the width of the buffer 200 in a vertical direction is greater than the width in a horizontal direction, the first powder P1 having a relatively light component may move to the upper internal space TSP of the buffer 200, and the second powder P2 having a relatively heavy component may move to the lower internal space BSP of the buffer 200.
Further, the buffer 200 may discharge gas having a relatively light component among waste gas supplied through the inlet 210 through the first outlet 220, and may discharge the second powder P2 having a relatively heavy component through the second outlet 230. In some example embodiments, the first powder P1 or the second powder P2 to be discharged through the first outlet 220 or the second outlet 230 may be powder generated in a pipe connecting the process chamber 110 and the buffer 200 to each other. In some example embodiments, the first powder P1 or the second powder P2 to be discharged through the first outlet 220 or the second outlet 230 may be powder generated by a physical or chemical reaction while waste gas stays in the buffer 200.
The disclosure may mitigate or prevent pipe clogging due to rapid introduction of waste gas and powder and control the flow of waste gas and powder without a separate trap by retaining and dualizing and dispersing the waste gas and powder through the buffer 200. The disclosure may mitigate or prevent introduction of excessive waste gas and powder into a reactor and mitigate or prevent failure of an exhaust system by diverging waste gas and powder flowing in a pipe by using the buffer 200 as well as the first valve V1 and the second valve V2.
Referring to
Operation P140 of supplying waste gas to the first reactor 122 may include selectively supplying the waste gas to at least one of the first reactor 122 and the second reactor 320 by opening and closing a plurality of valves connecting the buffer 200, the first reactor 122, and the second reactor 320 arranged in parallel with the first reactor 122 to each other, based on the amount of powder generated from the waste gas. Here, the plurality of valves may include the first valve V1 and the second valve V2 of
For example, the controller 160 may close the pipe connecting the buffer 200 and the first reactor 122 to each other by using the first valve V1 and the second valve V2, thereby blocking waste gas supplied from the buffer 200 to the first reactor 122. At the same time, the controller 160 may open a pipe connecting the buffer 200 and the second reactor 320 to each other by using the first valve V1 and the second valve V2, thereby supplying waste gas from the buffer 200 to the second reactor 320.
On the contrary, the controller 160 may open the pipe connecting the buffer 200 and the first reactor 122 to each other by using the first valve V1 and the second valve V2, thereby supplying the waste gas from the buffer 200 to the first reactor 122. At the same time, the controller 160 may close the pipe connecting the buffer 200 and the second reactor 320 to each other by using the first valve V1 and the second valve V2, thereby blocking waste gas to be supplied from the buffer 200 to the second reactor 320.
When it is determined that a pipe is clogged based on the amount of powder stacked in the pipe connecting the buffer 200 and the first reactor 122 to each other, the controller 160 may close the pipe connecting the buffer 200 and the first reactor 122 to each other and supply waste gas to the second reactor 320. However, in a case where it is not determined that a pipe is clogged, the controller 160 may maintain a state of closing the pipe connecting the buffer 200 and the second reactor 320 to each other by using the first valve V1 and the second valve V2.
After the waste gas is supplied to the first reactor 122, heat treatment may be performed on the waste gas in the first reactor 122 in operation P150. Here, the waste gas may include powder (e.g., the first powder P1 or the second powder P2). The powder may be powder generated in a pipe connecting the buffer 200 and the first reactor 122 to each other, and may be generated from waste gas in all pipes in the exhaust system 10a.
The waste gas and powder in the waste gas may be burned through a heating member (not shown) installed in the first reactor 122. Further, the first reactor 122 may include a cooling member (not shown), and may cool again high-temperature waste gas and powder through the cooling member after burning the waste gas and powder through the heating member. Thereafter, the waste gas and powder may be supplied to the wet tank 130 and the wet tower 140.
After heat treatment is performed on the waste gas, the waste gas may be cleaned by using cleaning water. Cleaning treatment for waste gas may be performed in the wet tank 130 and the wet tower 140. For example, the burnt waste gas and powder may be dissolved while passing through cleaning water stored in a storage space of the wet tank 130. In addition, waste gas and powder, which are unreacted in the wet tank 130, may be washed again by cleaning water sprayed by a plurality of nozzles of the wet tower 140. Accordingly, gas discharged through the wet tower 140 may be purified gas and may not contain powder.
While the inventive concepts have been particularly shown and described with reference to some example embodiments thereof, it will be understood that various changes in form and details may be made therein without departing from the spirit and scope of the following claims.
| Number | Date | Country | Kind |
|---|---|---|---|
| 10-2022-0124522 | Sep 2022 | KR | national |
