Double RESURF Device Technology for Power ICs; Yukimasa Koishikawa; Mitsuasa Takahashi; Hiroshi Yanagigawa and Toshihide Kuriyama; 1994; pp. 438-443. |
Novel Silicon-on-Insulator Mosfet for High-Voltage Integrated Circuits; K.A. Fesler; B.Y. Kim; H.J. Shaw; 1989; pp. 536-537. |
Novel High-Voltage Silicon-on-Insulator Mosfets; Qin Lu, P. Ratnam and C. Andre T. Salama; 1992; pp. 1745-1750. |
Optimized 25V, 0.34m.OMEGA..multidot.cm.sup.2 Very-Thin-RESURF(VTR), Drain Extended IGFETs in a Compressed BiCMOS Process; Chin-Yu Tsai, John Arch, Taylor Efland, John Erdeljac, Lou Hutter, Jozef Mitros, Jau-Yuann Yang and Han-Tzong Yuan; 1996; pp. 18.2.1-18.2.4. |
An Optimized RESURF LDMOS Power Device Module Compatible with Advanced Logic Processes; Taylor Efland, Satwinder Malhi, Wayne Bailey, Oh Kyong Kwon, Wai Tung Ng, Manolo Torreno and Steve Keller; 1992; pp. 9.4.1-9.4.4. |
A Resurfed High-Voltage NMOS Device Fully Compatible With A Low-Voltage 0.8.mu.m BiCMOS Technology; Yong Qiang Li, C. Andre T. Salama, Mike Seufert, Peter Schvan and Mike King; 1996; pp. 571-576. |
Thin Layer High-Voltage Devices (Resurf Devices); J.A. Appels, M.G. Collet, P.A.H. Hart, H.M.J. Vaes and J.F.C.M. Verhoeven; 1980; pp. 1-13. |