with asymmetry in the channel direction

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H01L29/66659

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/66659with asymmetry in the channel direction

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Manufacturing method of semiconductor device using gate-through imp...
- Patent number 12,224,211
- Issue date Feb 11, 2025
- SK keyfoundry Inc.
- Hee Hwan Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor doped region with biased isolated members
- Patent number 12,211,807
- Issue date Jan 28, 2025
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and associated fabricating method
- Patent number 12,211,935
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a superlattice and an asymmetric cha...
- Patent number 12,199,180
- Issue date Jan 14, 2025
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NAND string utilizing floating body memory cell
- Patent number 12,171,093
- Issue date Dec 17, 2024
- Zeno Semiconductor, Inc.
- Benjamin S. Louie
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit structure
- Patent number 12,166,121
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual gate structures for semiconductor devices
- Patent number 12,132,108
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Chih Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor having substantially parallelepiped-shaped insulatin...
- Patent number 12,125,899
- Issue date Oct 22, 2024
- STMicroelectronics (Rousset) SAS
- Arnaud Regnier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device in a level shifter with electrostatic discharg...
- Patent number 12,057,442
- Issue date Aug 6, 2024
- MagnaChip Semiconductor, Ltd.
- Kyong Jin Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric source and drain structures in semiconductor devices
- Patent number 12,057,503
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with controllable resistance
- Patent number 12,015,056
- Issue date Jun 18, 2024
- International Business Machines Corporation
- Yulong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon, nitrogen and/or fluorine co-implants for low resistance tra...
- Patent number 12,015,057
- Issue date Jun 18, 2024
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFETs structure
- Patent number 11,967,645
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yogendra Yadav
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual threshold voltage (VT) channel devices and their methods of fa...
- Patent number 11,967,615
- Issue date Apr 23, 2024
- Intel Corporation
- Hsu-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having asymmetric threshold voltage and buck converter
- Patent number 11,936,299
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chu Fu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor structure
- Patent number 11,935,950
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric FET for FDSOI devices
- Patent number 11,929,433
- Issue date Mar 12, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ignasi Cortes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having improved electrostatic discharge protec...
- Patent number 11,916,060
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual gate structures for semiconductor devices
- Patent number 11,894,459
- Issue date Feb 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Po-Chih Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extended-drain metal-oxide-semiconductor devices with a silicon-ger...
- Patent number 11,888,062
- Issue date Jan 30, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Felix Holzmüller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a superlattice and an asymmetric cha...
- Patent number 11,869,968
- Issue date Jan 9, 2024
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure having a gate structure and overlyin...
- Patent number 11,855,158
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hong-Shyang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive switching random access memory with asymmetric source and...
- Patent number 11,856,797
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chin-Chieh Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with controllable resistance
- Patent number 11,855,149
- Issue date Dec 26, 2023
- International Business Machines Corporation
- Yulong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor doped region with biased isolated members
- Patent number 11,830,830
- Issue date Nov 28, 2023
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NAND string utilizing floating body memory cell
- Patent number 11,818,878
- Issue date Nov 14, 2023
- Zeno Semiconductor, Inc.
- Benjamin S. Louie
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and semiconductor device fabrication method
- Patent number 11,791,220
- Issue date Oct 17, 2023
- Lapis Semiconductor Co., Ltd.
- Toru Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device integration on a common substrate
- Patent number 11,791,377
- Issue date Oct 17, 2023
- Silanna Asia Pte Ltd
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device and manufacturing method of high...
- Patent number 11,791,409
- Issue date Oct 17, 2023
- KEY FOUNDRY CO., LTD.
- Jin Seong Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having multiple wells and method of making
- Patent number 11,769,812
- Issue date Sep 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Chang Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NAND String Utilizing Floating Body Memory Cell
- Publication number 20250063718
- Publication date Feb 20, 2025
- Zeno Semiconductor, Inc.
- Benjamin S. Louie
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE
- Publication number 20250056835
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Bo SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS TRANSISTOR HAVING SUBSTANTIALLY PARALLELPIPED-SHAPED INSULATING...
- Publication number 20250040165
- Publication date Jan 30, 2025
- STMicroelectronics (Rousset) SAS
- Arnaud REGNIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Gate Structures For Semiconductor Devices
- Publication number 20240387726
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Chih SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetric Source and Drain Structures in Semiconductor Devices
- Publication number 20240363749
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON, NITROGEN AND/OR FLUORINE CO-IMPLANTS FOR LOW RESISTANCE TRA...
- Publication number 20240290844
- Publication date Aug 29, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH SUPERJUNCTIONS AND METHO...
- Publication number 20240250119
- Publication date Jul 25, 2024
- SANDISK TECHNOLOGIES LLC
- Masashi ISHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A TRANSISTOR HAVING ASYMMETRIC THRESHOLD VOLTAGE A...
- Publication number 20240223087
- Publication date Jul 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chu Fu CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Transistor Structure
- Publication number 20240186412
- Publication date Jun 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Po-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCOS FILLET FOR DRAIN REDUCED BREAKDOWN IN HIGH VOLTAGE TRANSISTORS
- Publication number 20240178318
- Publication date May 30, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Martin B. Mollat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING IMPROVED ELECTROSTATIC DISCHARGE PROTEC...
- Publication number 20240153943
- Publication date May 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND AN ASYMMETRIC CHA...
- Publication number 20240097026
- Publication date Mar 21, 2024
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD
- Publication number 20240096975
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- HONG-SHYANG WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE AND MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE
- Publication number 20240072178
- Publication date Feb 29, 2024
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Yan GU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DE...
- Publication number 20240055503
- Publication date Feb 15, 2024
- Semiconductor Components Industries, LLC
- Arash ELHAMI KHORASANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DOPED REGION WITH BIASED ISOLATED MEMBERS
- Publication number 20240047387
- Publication date Feb 8, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NAND String Utilizing Floating Body Memory Cell
- Publication number 20240040767
- Publication date Feb 1, 2024
- Zeno Semiconductor, Inc.
- Benjamin S. Louie
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF HIGH...
- Publication number 20230411519
- Publication date Dec 21, 2023
- KEY FOUNDRY CO., LTD.
- Jin Seong CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTION DEVICE STRUCTURES WITH A DISCONTINUOUS ISOLATION WELL
- Publication number 20230395714
- Publication date Dec 7, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Anindya Nath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING MULTIPLE WELLS
- Publication number 20230378296
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Chang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE
- Publication number 20230282742
- Publication date Sep 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Bo SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH CONTROLLABLE RESISTANCE
- Publication number 20230268396
- Publication date Aug 24, 2023
- International Business Machines Corporation
- Yulong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS TRANSISTOR AND METHOD OF FORMING THE LDMOS TRANSISTOR WITH IM...
- Publication number 20230215918
- Publication date Jul 6, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Jun Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NMOS HALF-BRIDGE POWER DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230178648
- Publication date Jun 8, 2023
- RICHTEK TECHNOLOGY CORPORATION
- Chih-Wen Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH DUAL WELLS
- Publication number 20230178652
- Publication date Jun 8, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Xiang-Zheng BO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF HIGH...
- Publication number 20230145810
- Publication date May 11, 2023
- KEY FOUNDRY CO., LTD.
- Jin Seong CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD
- Publication number 20230080932
- Publication date Mar 16, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- CHEN-LIANG CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC FIELD-EFFECT TRANSISTOR-ANTENNA DEVICE FOR TERAHERTZ WAV...
- Publication number 20220416074
- Publication date Dec 29, 2022
- UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
- Kyung Rok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20220384642
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Bo SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL GATE STRUCTURES FOR SEMICONDUCTOR DEVICES
- Publication number 20220384647
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Po-Chih SU
- H01 - BASIC ELECTRIC ELEMENTS

with asymmetry in the channel direction

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Manufacturing method of semiconductor device using gate-through imp...

Semiconductor doped region with biased isolated members

Semiconductor structure and associated fabricating method

Semiconductor device including a superlattice and an asymmetric cha...

NAND string utilizing floating body memory cell

Integrated circuit structure

Dual gate structures for semiconductor devices

MOS transistor having substantially parallelepiped-shaped insulatin...

Semiconductor device in a level shifter with electrostatic discharg...

Asymmetric source and drain structures in semiconductor devices

Field effect transistor with controllable resistance

Carbon, nitrogen and/or fluorine co-implants for low resistance tra...

Power MOSFETs structure

Dual threshold voltage (VT) channel devices and their methods of fa...

Transistor having asymmetric threshold voltage and buck converter

High voltage transistor structure

Asymmetric FET for FDSOI devices

Semiconductor device having improved electrostatic discharge protec...

Dual gate structures for semiconductor devices

Extended-drain metal-oxide-semiconductor devices with a silicon-ger...

Semiconductor device including a superlattice and an asymmetric cha...

Semiconductor device structure having a gate structure and overlyin...

Resistive switching random access memory with asymmetric source and...

Field effect transistor with controllable resistance

Semiconductor doped region with biased isolated members

NAND string utilizing floating body memory cell

Semiconductor device and semiconductor device fabrication method

Power device integration on a common substrate

High voltage semiconductor device and manufacturing method of high...

Semiconductor device having multiple wells and method of making

Patents Applicationslast 30 patents

NAND String Utilizing Floating Body Memory Cell

INTEGRATED CIRCUIT STRUCTURE

MOS TRANSISTOR HAVING SUBSTANTIALLY PARALLELPIPED-SHAPED INSULATING...

Dual Gate Structures For Semiconductor Devices

Asymmetric Source and Drain Structures in Semiconductor Devices

CARBON, NITROGEN AND/OR FLUORINE CO-IMPLANTS FOR LOW RESISTANCE TRA...

HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH SUPERJUNCTIONS AND METHO...

METHOD OF MAKING A TRANSISTOR HAVING ASYMMETRIC THRESHOLD VOLTAGE A...

High Voltage Transistor Structure

LOCOS FILLET FOR DRAIN REDUCED BREAKDOWN IN HIGH VOLTAGE TRANSISTORS

SEMICONDUCTOR DEVICE HAVING IMPROVED ELECTROSTATIC DISCHARGE PROTEC...

SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND AN ASYMMETRIC CHA...

SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD

DIODE AND MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DE...

SEMICONDUCTOR DOPED REGION WITH BIASED ISOLATED MEMBERS

NAND String Utilizing Floating Body Memory Cell

HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF HIGH...

PROTECTION DEVICE STRUCTURES WITH A DISCONTINUOUS ISOLATION WELL

SEMICONDUCTOR DEVICE HAVING MULTIPLE WELLS

INTEGRATED CIRCUIT STRUCTURE

FIELD EFFECT TRANSISTOR WITH CONTROLLABLE RESISTANCE

LDMOS TRANSISTOR AND METHOD OF FORMING THE LDMOS TRANSISTOR WITH IM...

NMOS HALF-BRIDGE POWER DEVICE AND MANUFACTURING METHOD THEREOF

TRANSISTORS WITH DUAL WELLS

HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF HIGH...

SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD

MONOLITHIC FIELD-EFFECT TRANSISTOR-ANTENNA DEVICE FOR TERAHERTZ WAV...

INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FORMING THE SAME

DUAL GATE STRUCTURES FOR SEMICONDUCTOR DEVICES