Iranmanesh et al, "A 0.8-.mu.m Advanced Single-Poly BiCMOS Technology for High-Density and High-Performance Applications," IEEE J. Solid-State Circs., Mar. 1991, pp. 422-426. |
Rein et al, "A Semi-Physical Bipolar Transistor Model for the Design of Very-High-Frequency Analog ICs," 1992 Bipolar/BiCMOS Circs. and Tech. Meet., 7-8 Oct. 1992, pp. 217-220. |
Blicher, Field-Effect and Bipolar Power Transistor Physics (Academic Press), 1981, pp. 114-117. |
Sze, Semiconductor Devices, Physics and Technology, (John Wiley & Sons), Copyright 1985, pp. 134-139. |
Tang et al, "Design Considerations of High-Performance Narrow-Emitter Bipolar Transistors," IEEE Electron Dev. Lett., Apr. 1987, pp. 174-175. |
Lu et al, "Lateral Encroachment of Extrinsic-Base Dopant i Submicrometer Bipolar Transistors," IEEE Electron Dev. Lett., Oct. 1987, pp. 49-. |
Muller et al, Device Electronics for Integrated Circuits (John Wiley & Sons), 1977, pp. 241 -245. |
Philips, Transistor Engineering (McGraw-Hill, reprinted Robert E. Krieger Pub. Co. , 1981), 1962, pp. 298-304. |
Warner et al, Transistor Fundamentals for the Integrated-Circuit Engineer (John Wiley & Sons), 1983, pp. 559-562. |
Grove, Physics and Technology of Semiconductor Devices (John Wiley & Sons), 1977, pp. 228 -230. |