Claims
- 1. In a data storage device including a plurality of floating gate storage transistors having respective control gates, sources and drains and a load on the drains of the plurality of floating gate storage transistors, an apparatus for programming a selected floating gate storage transistor by hot electron injecting a charge into the selected floating gate comprising:
- a voltage supply circuit coupled to the control gate, the source, and the drain of the selected floating gate storage transistor, to supply a gate programming potential to the control gate, a voltage to the source, and a voltage to the drain of the selected floating gate storage transistor to hot electron inject a charge into the floating gate; and
- a control circuit coupled to the drain of the selected floating gate storage transistor for varying the load on the selected floating gate storage transistor during programming through hot electron injection.
- 2. The apparatus of claim 1, wherein the data storage device includes a data line coupled to the drains of a subset of the plurality of floating gate storage transistors, and the control circuit includes a circuit coupled with the data line to reduce load resistance of the data line during programming.
- 3. The apparatus of claim 1, wherein the control circuit further includes:
- a circuit coupled to the voltage supply circuit, for varying the gate programming potential during hot electron injection within a single pulse having a first interval and a second interval after the first interval, so that a first potential sufficient to induce hot electron injection is applied during the first interval of the single pulse and a second potential higher than the first potential is applied during the second interval of the single pulse.
Parent Case Info
This application is a continuation of parent application Ser. No. 08/444,315, filed 18 May 1995, now U.S. Pat. No. 5,563,822, which is a division of 08/393,243, filed 23 Feb. 1995, now U.S. Pat. No. 5,563,823, which is a continuation of 08/108,671, filed 31 Aug. 1993, now abandoned.
US Referenced Citations (15)
Foreign Referenced Citations (2)
Number |
Date |
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2037597 A |
Feb 1990 |
JPX |
WO 9428554 |
Dec 1994 |
WOX |
Non-Patent Literature Citations (1)
Entry |
Advanced Micro Devices AM28F020 262, 144.times.8-bit CMOS Flash Memory, Publications 14727, Rev. B, Issued Mar. 1991 4-101-4-140. |
Divisions (1)
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Date |
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Parent |
393243 |
Feb 1995 |
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Continuations (2)
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444315 |
May 1995 |
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Parent |
108671 |
Aug 1993 |
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