Claims
- 1. An ultra-soft recovery diode comprising:a wafer of silicon of one conductivity type; a plurality of spaced diffusions of the other conductivity type into the top surface of said wafer; an anode contact overlying and contacting said diffusions and the silicon in the spaces between said diffusions; a cathode contact on the bottom surface of said wafer; a helium implant having a peak located immediately below said plurality of spaced diffusions to create defects which reduce minority carrier lifetime in that area; and E-beam induced defects uniformly distributed over the full volume of said wafer; said wafer being free of intentional heavy metal lifetime killing atoms.
- 2. The device of claim 1, wherein said helium implant has a dose of from 5E9 to 2E11/cm2 and has a depth of from 10 to 30 microns from the anode surface of said wafer.
- 3. A diode comprising:a wafer of silicon of one conductivity type; at least one diffusion of the other conductivity type formed into a portion at the top surface of said wafer; a first main contact formed atop said wafer and contacting both said diffusion and a portion of said one conductivity type of said wafer; a second main control on the bottom surface of said wafer; a helium implant having a peak located immediately below said at least one diffusion to create defects which reduce minority carrier lifetime; and a beam induced defects uniformly distributed over the full volume of said wafer; said wafer being free of intentional heavy metal lifetime killing atoms.
- 4. The device of claim 3, wherein said helium implant has a dose of from 5E9 to 2E11/cm2 and has a depth of from 10 to 30 microns from the anode surface of said wafer.
CROSS REFERENCE TO RELATED APPLICATIONS
This is a divisional of U.S. patent application Ser. No. 09/593,333, filed Jun. 14, 2000 in the name of Richard Francis and Chiu Ng and entitled FAST RECOVERY DIODE AND METHOD FOR ITS MANUFACTURE.
US Referenced Citations (18)
Non-Patent Literature Citations (1)
Entry |
International Search Report dated Feb. 6, 2002 from the International Searching Authority for corresponding PCT Appln. No. PCT/US01/17381. |