the imperfections being within the semiconductor body

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/32the imperfections being within the semiconductor body

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Patents Grantslast 30 patents

Information Patent Grant
Power diode and method of manufacturing a power diode
- Patent number 12,211,945
- Issue date Jan 28, 2025
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, and method of manufacturing semiconductor device
- Patent number 12,205,993
- Issue date Jan 21, 2025
- Fuji Electric Co., Ltd.
- Hiroki Wakimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,191,148
- Issue date Jan 7, 2025
- Fuji Electric Co., Ltd.
- Yasunori Agata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained semiconductor FET devices with epitaxial quality improvement
- Patent number 12,176,434
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a silicon carbide epitaxial substrate
- Patent number 12,176,399
- Issue date Dec 24, 2024
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon wafer and manufacturing method of the same
- Patent number 12,142,645
- Issue date Nov 12, 2024
- Sumco Corporation
- Kazuhisa Torigoe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 12,107,123
- Issue date Oct 1, 2024
- Fuji Electric Co., Ltd.
- Takumi Fujimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low etch pit density 6 inch semi-insulating gallium arsenide wafers
- Patent number 12,084,790
- Issue date Sep 10, 2024
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device
- Patent number 12,080,707
- Issue date Sep 3, 2024
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a carrier trapping region including cry...
- Patent number 12,027,579
- Issue date Jul 2, 2024
- Rohm Co., Ltd.
- Seigo Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method for semiconductor device
- Patent number 12,009,268
- Issue date Jun 11, 2024
- Fuji Electric Co., Ltd.
- Motoyoshi Kubouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including an IGBT with reduced variation in th...
- Patent number 11,996,452
- Issue date May 28, 2024
- Fuji Electric Co., Ltd.
- Motoyoshi Kubouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having embedded GeSnB...
- Patent number 11,990,513
- Issue date May 21, 2024
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer, production method therefor, and defect identif...
- Patent number 11,961,736
- Issue date Apr 16, 2024
- Resonac Corporation
- Ling Guo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide crystal
- Patent number 11,952,676
- Issue date Apr 9, 2024
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device including trench structure and manufacturing m...
- Patent number 11,929,397
- Issue date Mar 12, 2024
- Infineon Technologies AG
- Thomas Basler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer
- Patent number 11,929,229
- Issue date Mar 12, 2024
- MI2-FACTORY GMBH
- Florian Krippendorf
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
MOSFET and memory cell having improved drain current through back b...
- Patent number 11,908,899
- Issue date Feb 20, 2024
- Zeno Semiconductor, Inc.
- Jin-Woo Han
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 11,901,416
- Issue date Feb 13, 2024
- Mitsubishi Electric Corporation
- Tetsujiro Tsunoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,894,258
- Issue date Feb 6, 2024
- Fuji Electric Co., Ltd.
- Takahiro Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device
- Patent number 11,888,024
- Issue date Jan 30, 2024
- Infineon Technologies AG
- Reinhard Ploss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating a semiconductor device
- Patent number 11,869,963
- Issue date Jan 9, 2024
- Infineon Technologies AG
- John Twynam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method
- Patent number 11,854,782
- Issue date Dec 26, 2023
- Fuji Electric Co., Ltd.
- Yasunori Agata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,855,077
- Issue date Dec 26, 2023
- Fuji Electric Co., Ltd.
- Shigeki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF substrate structure and method of production
- Patent number 11,848,191
- Issue date Dec 19, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Emmanuel Augendre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing MOSFET having a semiconductor base substrat...
- Patent number 11,843,048
- Issue date Dec 12, 2023
- Shindengen Electric Manufacturing Co., Ltd.
- Daisuke Arai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having overvoltage protection and method...
- Patent number 11,843,045
- Issue date Dec 12, 2023
- Infineon Technologies Austria AG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 11,830,782
- Issue date Nov 28, 2023
- Fuji Electric Co., Ltd.
- Motoyoshi Kubouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,823,898
- Issue date Nov 21, 2023
- Fuji Electric Co., Ltd.
- Yuichi Onozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dislocation glide suppression for misfit dislocation free heteroepi...
- Patent number 11,804,525
- Issue date Oct 31, 2023
- The Regents of the University of California
- John Bowers
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20250022710
- Publication date Jan 16, 2025
- Fuji Electric Co., Ltd.
- Soichi YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240429282
- Publication date Dec 26, 2024
- Mitsubishi Electric Corporation
- Yusuke MIYATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS
- Publication number 20240426025
- Publication date Dec 26, 2024
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240421152
- Publication date Dec 19, 2024
- Fuji Electric Co., Ltd.
- Yuki SAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE USING SAME, AND MANUF...
- Publication number 20240379830
- Publication date Nov 14, 2024
- HITACHI POWER SEMICONDUCTOR DEVICE, LTD.
- Tomoyuki MIYOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240371860
- Publication date Nov 7, 2024
- Fuji Electric Co., Ltd.
- Tatsuya NAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
- Publication number 20240363766
- Publication date Oct 31, 2024
- HITACHI POWER SEMICONDUCTOR DEVICE, LTD.
- Takasumi OOYANAGI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240363623
- Publication date Oct 31, 2024
- Fuji Electric Co., Ltd.
- Motoyoshi KUBOUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240339517
- Publication date Oct 10, 2024
- Fuji Electric Co., Ltd.
- Motoyoshi KUBOUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240321972
- Publication date Sep 26, 2024
- Kabushiki Kaisha Toshiba
- Shinya SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING AN IGBT WITH REDUCED VARIATION IN TH...
- Publication number 20240304677
- Publication date Sep 12, 2024
- Fuji Electric Co., Ltd.
- Motoyoshi KUBOUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCT...
- Publication number 20240304676
- Publication date Sep 12, 2024
- Sumitomo Electric Industries, Ltd.
- Takaya MIYASE
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20240274698
- Publication date Aug 15, 2024
- Fuji Electric Co., Ltd.
- Misaki UCHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREFOR, AND SEMICOND...
- Publication number 20240234514
- Publication date Jul 11, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) WITH INTERLAYERS FOR INTEGRATED CIRCUIT TECHN...
- Publication number 20240204059
- Publication date Jun 20, 2024
- Intel Corporation
- Pratik KOIRALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB...
- Publication number 20240186378
- Publication date Jun 6, 2024
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURE OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHO...
- Publication number 20240178312
- Publication date May 30, 2024
- Dynax Semiconductor, Inc.
- Hui ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240162078
- Publication date May 16, 2024
- FUJI ELECTRIC CO., LTD.
- Takahiro TAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240162353
- Publication date May 16, 2024
- RENESAS ELECTRONICS CORPORATION
- Nao Nagata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240154003
- Publication date May 9, 2024
- Fuji Electric Co., Ltd.
- Yosuke SAKURAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240145465
- Publication date May 2, 2024
- Fuji Electric Co., Ltd.
- Shigeki SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING...
- Publication number 20240105782
- Publication date Mar 28, 2024
- TANKEBLUE SEMICONDUCTOR CO., LTD.
- Yanfang LOU
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD
- Publication number 20240096629
- Publication date Mar 21, 2024
- Fuji Electric Co., Ltd.
- Yasunori AGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240087898
- Publication date Mar 14, 2024
- Kabushiki Kaisha Toshiba
- Seiya SAKAKURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240079286
- Publication date Mar 7, 2024
- Fuji Electric Co., Ltd.
- Motoyoshi KUBOUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING TH...
- Publication number 20240055258
- Publication date Feb 15, 2024
- Fuji Electric Co., Ltd.
- Yoshihito ICHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240047200
- Publication date Feb 8, 2024
- Fuji Electric Co., Ltd.
- Yuichi Onozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240047454
- Publication date Feb 8, 2024
- Mitsubishi Electric Corporation
- Hidenori FUJII
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230420524
- Publication date Dec 28, 2023
- Mitsubishi Electric Corporation
- Kenji SUZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230420523
- Publication date Dec 28, 2023
- DENSO CORPORATION
- Yusuke HAYAMA
- H01 - BASIC ELECTRIC ELEMENTS

the imperfections being within the semiconductor body

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Power diode and method of manufacturing a power diode

Semiconductor device, and method of manufacturing semiconductor device

Semiconductor device and manufacturing method thereof

Strained semiconductor FET devices with epitaxial quality improvement

Method of manufacturing a silicon carbide epitaxial substrate

Silicon wafer and manufacturing method of the same

Silicon carbide semiconductor device

Low etch pit density 6 inch semi-insulating gallium arsenide wafers

Semiconductor device

Semiconductor device having a carrier trapping region including cry...

Semiconductor device and fabrication method for semiconductor device

Semiconductor device including an IGBT with reduced variation in th...

Gate-all-around integrated circuit structures having embedded GeSnB...

SiC epitaxial wafer, production method therefor, and defect identif...

Silicon carbide crystal

Semiconductor device including trench structure and manufacturing m...

Semiconductor wafer

MOSFET and memory cell having improved drain current through back b...

Semiconductor device

Semiconductor device and manufacturing method thereof

Method of forming a semiconductor device

Semiconductor device and method of fabricating a semiconductor device

Semiconductor device and fabrication method

Semiconductor device

RF substrate structure and method of production

Method of manufacturing MOSFET having a semiconductor base substrat...

Power semiconductor device having overvoltage protection and method...

Semiconductor device and fabrication method thereof

Semiconductor device and method for manufacturing the same

Dislocation glide suppression for misfit dislocation free heteroepi...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE USING SAME, AND MANUF...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INCLUDING AN IGBT WITH REDUCED VARIATION IN TH...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCT...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREFOR, AND SEMICOND...

GALLIUM NITRIDE (GAN) WITH INTERLAYERS FOR INTEGRATED CIRCUIT TECHN...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB...

EPITAXIAL STRUCTURE OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHO...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING...

SEMICONDUCTOR DEVICE AND FABRICATION METHOD

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING TH...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE