Filing Document | Filing Date | Country | Kind | 102e Date | 371c Date |
---|---|---|---|---|---|
PCT/JP96/00464 | 2/28/1996 | 8/28/1998 | 8/28/1998 |
Publishing Document | Publishing Date | Country | Kind |
---|---|---|---|
WO97/32311 | 9/4/1997 |
Number | Name | Date | Kind |
---|---|---|---|
5455786 | Takeuchi et al. | Oct 1995 | |
5515312 | Nakakuma et al. | May 1996 | |
5539279 | Takeuchi et al. | Jul 1996 | |
5546342 | Nakane et al. | Aug 1996 |
Number | Date | Country |
---|---|---|
61-142593 | Jun 1986 | JPX |
62-12992 | Jan 1987 | JPX |
62-180591 | Aug 1987 | JPX |
2-110893 | Apr 1990 | JPX |
3-283176 | Dec 1991 | JPX |
4-184787 | Jul 1992 | JPX |
5-135580 | Jun 1993 | JPX |
6-60650 | Mar 1994 | JPX |
6-208796 | Jul 1994 | JPX |
6-302193 | Oct 1994 | JPX |
Entry |
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"An Experimental 1.5-V 64-Mb DRAM", IEEE Journal of Solid State Circuits, vol. 26, No. 4, Apr. 1991, pp. 465-472, Nakagome et al. |
"A Single-Transistor Ferroelectric Memory Cell", IEEE Int'l Solid-State Conference, Digest of Technical Papers, pp. 68-69, Feb. 1995, Nakamura et al. |