The invention described herein may be manufactured, used and/or licensed by or or the United States Government.
Number | Name | Date | Kind |
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5427988 | Sengupta et al. | Jun 1995 | |
5614018 | Azuma et al. | Mar 1997 | |
5625587 | Peng et al. | Apr 1997 | |
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Joshi et al., "Characterization of Ba0.6Sr0.4TiO3 Thin Films with Mg Addie Fabricated by Metalorganic Decomposition Technique", Integrated Ferroelectrics, vol. 19, pp. 141-148, Jun. 1998. |
"Characterization of Ba.sub.0.6 Sr.sub.0.4 TiO.sub.3 Thin Films with Mg Additive Fabricated by Metalogganic Decomposition Technique," P.C. Joshi, S. Ramanathan, S.B. Desu, S. Stowell and S. Sengupta, Jun. 1998. Integrated Ferroelectrics vol. 19, pp. 141-148. |