Claims
- 1. A method for making a ferroelectric thin film containing lead (Pb) on a substrate by means of a wet method, comprising the following steps:adding to a coating solution to be used for producing a ferroelectric thin film, antimony (Sb) in such a quantity to compensate for a change of a thin film into a p-type caused by Pb defects generated in said thin film, and forming said ferroelectric thin film containing lead on a substrate by using said coating solution containing Sb.
- 2. A method for making a ferroelectric thin film as claimed in claim 1, wherein said process comprises:(a) applying said coating solution containing Sb on a substrate by means of a spin coating step, (b) drying said coated layer made by said coating process to produce a dried coating layer, (c) subjecting the dried coated layer to a prebaking step to prebake said dried coated layer, and (d) subjecting said prebaked layer to a baking step to bake said prebaked layer.
- 3. A method for making a ferroelectric thin film as claimed in claim 2, wherein said substrate is rotated at a low speed of rotation in an initial stage of said coating process and is rotated at a high speed of rotation in a remaining stage of said coating process.
- 4. A method for making a ferroelectric thin film as claimed in claim 2, wherein a cycle of said coating process, said drying process, and said prebaking process is repeated a plurality of times.
- 5. A method for making a ferroelectric thin film as claimed in claim 1, wherein said coating solution containing Sb is a mixed liquid of the first liquid containing Pb(Zr0.52Ti0.48)O3 and the second liquid containing Sb in a form of Pb—O—Sb metalloxy bond.
- 6. A method for making a ferroelectric thin film as claimed in claim 1, wherein said quantity of antimony added previously is in a range of 0.01-5 mol % based upon lead.
- 7. A method for making a ferroelectric thin film as claimed in claim 1, wherein ferroelectric thin film is a PbZrTiSbO thin film.
- 8. A method for making a ferroelectric thin film as claimed in claim 6, wherein ferroelectric thin film is a PbZrTiSbO thin film.
- 9. A method for making a ferroelectric thin film as claimed in claim 1, wherein a lead titanate (PbTiO3) thin film is first formed on a substrate and then said ferroelectric thin film is formed on said lead titanate thin film.
- 10. A method for making a ferroelectric thin film as claimed in claim 6, wherein a lead titanate (PbTiO3) thin film is first formed on a substrate and then said ferroelectric thin film is formed on said lead titanate thin film.
- 11. A method for making a ferroelectric thin film as claimed in claim 7, wherein a lead titanate (PbTiO3) thin film is first formed on a substrate and then said ferroelectric thin film is formed on said lead titanate thin film.
Priority Claims (1)
Number |
Date |
Country |
Kind |
7-331698 |
Dec 1995 |
JP |
|
Parent Case Info
This application is a divisional application of Ser. No. 08/768,293 filed Dec. 17, 1996, now U.S. Pat. No. 5,976,705.
US Referenced Citations (3)
Number |
Name |
Date |
Kind |
5279996 |
Hase et al. |
Jan 1994 |
A |
5976705 |
Koiwa |
Nov 1999 |
A |
6140746 |
Miyashita et al. |
Oct 2000 |
A |
Non-Patent Literature Citations (1)
Entry |
Ceramics vol. 30, No. 6, pp. 499-507 (1995). |